JP7486480B2 - 表示装置および電子機器 - Google Patents

表示装置および電子機器 Download PDF

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Publication number
JP7486480B2
JP7486480B2 JP2021523124A JP2021523124A JP7486480B2 JP 7486480 B2 JP7486480 B2 JP 7486480B2 JP 2021523124 A JP2021523124 A JP 2021523124A JP 2021523124 A JP2021523124 A JP 2021523124A JP 7486480 B2 JP7486480 B2 JP 7486480B2
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Prior art keywords
transistor
layer
light
electrode
capacitor
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JP2021523124A
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Japanese (ja)
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JPWO2020240329A1 (enExample
JPWO2020240329A5 (enExample
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進 川島
直人 楠本
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JPWO2020240329A1 publication Critical patent/JPWO2020240329A1/ja
Publication of JPWO2020240329A5 publication Critical patent/JPWO2020240329A5/ja
Priority to JP2024075383A priority Critical patent/JP7618876B2/ja
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Publication of JP7486480B2 publication Critical patent/JP7486480B2/ja
Priority to JP2025002657A priority patent/JP7781318B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1334—Constructional arrangements; Manufacturing methods based on polymer dispersed liquid crystals, e.g. microencapsulated liquid crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Theoretical Computer Science (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Control Of El Displays (AREA)
JP2021523124A 2019-05-30 2020-05-18 表示装置および電子機器 Active JP7486480B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2024075383A JP7618876B2 (ja) 2019-05-30 2024-05-07 表示装置
JP2025002657A JP7781318B2 (ja) 2019-05-30 2025-01-08 発光装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019101319 2019-05-30
JP2019101319 2019-05-30
PCT/IB2020/054663 WO2020240329A1 (ja) 2019-05-30 2020-05-18 表示装置および電子機器

Related Child Applications (1)

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JP2024075383A Division JP7618876B2 (ja) 2019-05-30 2024-05-07 表示装置

Publications (3)

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JPWO2020240329A1 JPWO2020240329A1 (enExample) 2020-12-03
JPWO2020240329A5 JPWO2020240329A5 (enExample) 2023-05-24
JP7486480B2 true JP7486480B2 (ja) 2024-05-17

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JP2024075383A Active JP7618876B2 (ja) 2019-05-30 2024-05-07 表示装置
JP2025002657A Active JP7781318B2 (ja) 2019-05-30 2025-01-08 発光装置

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JP2024075383A Active JP7618876B2 (ja) 2019-05-30 2024-05-07 表示装置
JP2025002657A Active JP7781318B2 (ja) 2019-05-30 2025-01-08 発光装置

Country Status (5)

Country Link
US (3) US11988926B2 (enExample)
JP (3) JP7486480B2 (enExample)
KR (1) KR20220013390A (enExample)
CN (1) CN113841253A (enExample)
WO (1) WO2020240329A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230164225A (ko) * 2018-02-01 2023-12-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040183978A1 (en) 2003-03-20 2004-09-23 Hun Jeoung Array substrate for in-plane switching liquid crystal display device and method of fabricating the same
JP2006186320A (ja) 2004-12-03 2006-07-13 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法、並びに表示装置
JP2007123861A (ja) 2005-09-29 2007-05-17 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
US20120104405A1 (en) 2010-11-02 2012-05-03 Hee-Dong Choi Array substrate for organic electroluminescent device and method of fabricating the same
US20150008395A1 (en) 2013-07-08 2015-01-08 Samsung Display Co., Ltd. Organic light emitting diodes display
CN104376813A (zh) 2013-11-26 2015-02-25 苹果公司 用于显示器像素单元阈值电压补偿电路的电容器结构
US20150187861A1 (en) 2013-12-30 2015-07-02 Lg Display Co., Ltd. Organic light emitting diode display device
US20160300864A1 (en) 2015-04-09 2016-10-13 Samsung Display Co., Ltd. Thin film transistor array substrate and display apparatus including the same
WO2016190187A1 (ja) 2015-05-25 2016-12-01 シャープ株式会社 表示装置の駆動回路
CN108010494A (zh) 2016-10-31 2018-05-08 乐金显示有限公司 栅极驱动器和使用该栅极驱动器的显示装置

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KR100467944B1 (ko) 2002-07-15 2005-01-24 엘지.필립스 엘시디 주식회사 반사투과형 액정표시장치 및 그의 제조방법
US7586121B2 (en) * 2004-12-07 2009-09-08 Au Optronics Corp. Electroluminescence device having stacked capacitors
EP3614442A3 (en) 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
JP5078246B2 (ja) 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
CN104282691B (zh) 2009-10-30 2018-05-18 株式会社半导体能源研究所 半导体装置
JP5781544B2 (ja) * 2011-08-09 2015-09-24 株式会社Ｊｏｌｅｄ 画像表示装置
KR101830791B1 (ko) 2011-09-08 2018-02-22 삼성디스플레이 주식회사 유기 발광 표시 장치
KR20150073297A (ko) 2013-12-20 2015-07-01 삼성디스플레이 주식회사 박막 트랜지스터, 이를 포함하는 표시 기판 및 표시 기판의 제조 방법
JP6330220B2 (ja) 2014-03-27 2018-05-30 株式会社Ｊｏｌｅｄ 表示装置、電子機器および基板
KR20170031313A (ko) * 2015-09-10 2017-03-21 삼성디스플레이 주식회사 디스플레이 장치
US20170102577A1 (en) * 2015-10-09 2017-04-13 Kent State University Electro-optical devices utilizing alternative transparent conductive oxide layers
KR20220165800A (ko) 2017-08-11 2022-12-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
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WO2019048966A1 (ja) * 2017-09-05 2019-03-14 株式会社半導体エネルギー研究所 表示システム
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Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040183978A1 (en) 2003-03-20 2004-09-23 Hun Jeoung Array substrate for in-plane switching liquid crystal display device and method of fabricating the same
JP2006186320A (ja) 2004-12-03 2006-07-13 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法、並びに表示装置
JP2007123861A (ja) 2005-09-29 2007-05-17 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
US20120104405A1 (en) 2010-11-02 2012-05-03 Hee-Dong Choi Array substrate for organic electroluminescent device and method of fabricating the same
US20150008395A1 (en) 2013-07-08 2015-01-08 Samsung Display Co., Ltd. Organic light emitting diodes display
CN104376813A (zh) 2013-11-26 2015-02-25 苹果公司 用于显示器像素单元阈值电压补偿电路的电容器结构
US20150187861A1 (en) 2013-12-30 2015-07-02 Lg Display Co., Ltd. Organic light emitting diode display device
US20160300864A1 (en) 2015-04-09 2016-10-13 Samsung Display Co., Ltd. Thin film transistor array substrate and display apparatus including the same
WO2016190187A1 (ja) 2015-05-25 2016-12-01 シャープ株式会社 表示装置の駆動回路
CN108010494A (zh) 2016-10-31 2018-05-08 乐金显示有限公司 栅极驱动器和使用该栅极驱动器的显示装置

Also Published As

Publication number Publication date
CN113841253A (zh) 2021-12-24
WO2020240329A1 (ja) 2020-12-03
US11988926B2 (en) 2024-05-21
JPWO2020240329A1 (enExample) 2020-12-03
US12204212B2 (en) 2025-01-21
JP7781318B2 (ja) 2025-12-05
US20250076716A1 (en) 2025-03-06
US20240248355A1 (en) 2024-07-25
KR20220013390A (ko) 2022-02-04
US20220252949A1 (en) 2022-08-11
JP2025061088A (ja) 2025-04-10
JP2024116116A (ja) 2024-08-27
JP7618876B2 (ja) 2025-01-21

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