JP7484925B2 - 光変調素子 - Google Patents
光変調素子 Download PDFInfo
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- JP7484925B2 JP7484925B2 JP2021550629A JP2021550629A JP7484925B2 JP 7484925 B2 JP7484925 B2 JP 7484925B2 JP 2021550629 A JP2021550629 A JP 2021550629A JP 2021550629 A JP2021550629 A JP 2021550629A JP 7484925 B2 JP7484925 B2 JP 7484925B2
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- 230000003287 optical effect Effects 0.000 claims description 67
- 239000010409 thin film Substances 0.000 claims description 49
- 239000000463 material Substances 0.000 claims description 12
- 239000002019 doping agent Substances 0.000 claims description 9
- 239000004047 hole gas Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 9
- 238000004088 simulation Methods 0.000 description 9
- 239000000969 carrier Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 229910052732 germanium Inorganic materials 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000005253 cladding Methods 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/0009—Materials therefor
- G02F1/0081—Electric or magnetic properties
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index
- G02F1/0152—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index using free carrier effects, e.g. plasma effect
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/06—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 integrated waveguide
- G02F2201/063—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 integrated waveguide ridge; rib; strip loaded
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/50—Phase-only modulation
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Description
τ=2RC …(1)
τ=C×(Rp+Rn) …(2)
CはPN接合の接合容量であり、RpはP側の抵抗値であり、RnはN側の抵抗値である。上述のように、抵抗値Rp,Rnを低下させることができるため、高速動作が可能となる。
R∝1/(μ・n) …(3)
・位相変調部の導波路の寸法
リブ幅500nm、リブ高340nm、導波路長3mm
・直列抵抗R 実施形態1.7Ω、 従来技術3.5Ω
・静電容量 実施形態、従来技術とも1.2pF(DC逆バイアス3V)
実施の形態では、第1薄膜130と第2薄膜132の両方を形成する場合を説明したがその限りでなく、第1薄膜130のみを形成することとしてもよいし、第2薄膜132のみを形成してもよい。
図8は、変形例2に係る光変調素子100Aの断面図である。この変形例では、リブ部112の肩の部分140,142に、不純物が低濃度でドープされている(補償ドープ)。
図9は、変形例3に係る光変調素子100Bの断面図である。実施の形態では、横構造のPN接合を説明したが、図9に示すように、縦型構造のPN接合にも本発明は適用可能である。
実施の形態では、Si導波路を説明したが、本発明の適用はその限りでなく、その他の半導体材料をベースとした導波路にも適用可能である。例えば、化合物半導体GaAs/Al1-xGaxAsの組み合わせを利用してもよい。リブ部112、P型スラブ領域114、およびN型スラブ領域116を構成する材料としてAl1-xGaxAs混晶を利用し、第1薄膜130および第2薄膜132にはGaAs結晶を利用してもよい。この材料系では、TypeIヘテロ接合のバンド配置となるため、2DHGおよび2DEGはそれぞれ第1薄膜130および第2薄膜132に形成される。組成比xは、例えば、0.7としてよい。組成比xはこの値に限るものでなく、必要とする2DHGおよび2DEGの密度、あるいは加工後の酸化防止などの要求条件に応じて調節すればよい。
110 コア
112 リブ部
114 P型スラブ領域
116 N型スラブ領域
130 第1薄膜
132 第2薄膜
120 上側クラッド層
122 下側クラッド層
Claims (5)
- PN接合を有するリブ部と、前記リブ部のP型領域と連続するP型スラブ領域と、前記リブ部のN型領域と連続するN型スラブ領域と、を有するリブ型光導波路と、
前記P型スラブ領域の上に形成され、ドーパントから隔離され、内部に二次元ホールガス(2DHG)が形成された、前記P型スラブ領域の材質と電子親和力が異なる第1薄膜と、
を備えることを特徴とする光変調素子。 - 前記第1薄膜は、前記リブ部の側壁からギャップを隔てて形成されることを特徴とする請求項1に記載の光変調素子。
- 前記N型スラブ領域の上に形成され、前記N型スラブ領域の材質と電子親和力が異なる第2薄膜をさらに備えることを特徴とする請求項1に記載の光変調素子。
- 前記第2薄膜は、前記リブ部の側壁からギャップを隔てて形成されることを特徴とする請求項3に記載の光変調素子。
- 前記リブ型光導波路はSiを含み、前記第1薄膜はGeを含むことを特徴とする請求項1から4のいずれかに記載の光変調素子。
Applications Claiming Priority (3)
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JP2019183556 | 2019-10-04 | ||
JP2019183556 | 2019-10-04 | ||
PCT/JP2020/035537 WO2021065578A1 (ja) | 2019-10-04 | 2020-09-18 | 光変調素子 |
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JPWO2021065578A1 JPWO2021065578A1 (ja) | 2021-04-08 |
JP7484925B2 true JP7484925B2 (ja) | 2024-05-16 |
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JP (1) | JP7484925B2 (ja) |
CN (1) | CN114514462A (ja) |
WO (1) | WO2021065578A1 (ja) |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000066157A (ja) | 1998-08-25 | 2000-03-03 | Nec Corp | 光制御デバイスおよびその製造方法 |
WO2000079601A1 (fr) | 1999-06-23 | 2000-12-28 | Seiko Epson Corporation | Dispositif a semi-conducteur et procede de fabrication dudit dispositif |
JP2008103392A (ja) | 2006-10-17 | 2008-05-01 | Nissan Motor Co Ltd | 半導体装置および半導体装置の製造方法 |
US20100060970A1 (en) | 2008-09-06 | 2010-03-11 | Sifotonics Technologies (Usa) Inc. | Electro-optic silicon modulator |
JP2014036210A (ja) | 2012-08-10 | 2014-02-24 | Sharp Corp | 半導体装置およびその製造方法 |
JP2014126728A (ja) | 2012-12-27 | 2014-07-07 | Fujikura Ltd | 光導波路素子及び光変調器 |
JP2016536806A (ja) | 2013-09-18 | 2016-11-24 | 中国科学院蘇州納米技術与納米▲ファン▼生研究所 | テラヘルツ光源のチップ、光源デバイス、光源ユニット及びその製造方法 |
JP2018146736A (ja) | 2017-03-03 | 2018-09-20 | 株式会社豊田中央研究所 | 光90度位相器、ssb変調器および光ヘテロダイン直交検波レーザレーダ |
JP2018205459A (ja) | 2017-06-01 | 2018-12-27 | 株式会社フジクラ | 光導波路素子 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7397101B1 (en) * | 2004-07-08 | 2008-07-08 | Luxtera, Inc. | Germanium silicon heterostructure photodetectors |
FR2943802B1 (fr) * | 2009-03-24 | 2011-09-30 | Univ Paris Sud | Modulateur optique a haut debit en semi-conducteur sur isolant |
CN103827737B (zh) * | 2011-10-03 | 2017-03-08 | 富士通株式会社 | 光半导体元件、其控制方法及其制造方法 |
CN104067162A (zh) * | 2012-01-31 | 2014-09-24 | 富士通株式会社 | 光发送器及光发送器的控制方法 |
KR102116977B1 (ko) * | 2013-04-11 | 2020-05-29 | 삼성전자 주식회사 | 비열 광 변조기 및 그 제조 방법 |
US9213137B2 (en) * | 2013-07-12 | 2015-12-15 | Globalfoundries Singapore Pte. Ltd. | Semiconductor devices including photodetectors integrated on waveguides and methods for fabricating the same |
CA2941586C (en) * | 2014-03-10 | 2018-05-22 | Coriant Advanced Technology, LLC | Germanium metal-contact-free near-ir photodetector |
US10546963B2 (en) * | 2014-12-01 | 2020-01-28 | Luxtera, Inc. | Method and system for germanium-on-silicon photodetectors without germanium layer contacts |
WO2016125772A1 (ja) * | 2015-02-06 | 2016-08-11 | 技術研究組合光電子融合基盤技術研究所 | 光変調器及びその製造方法 |
US20160313577A1 (en) * | 2015-04-23 | 2016-10-27 | Laxense Inc. | Dual-junction optical modulator and the method to make the same |
WO2017058319A2 (en) * | 2015-06-30 | 2017-04-06 | Massachusetts Institute Of Technology | Waveguide-coupled silicon-germanium photodetectors and fabrication methods for same |
US11105974B2 (en) * | 2015-06-30 | 2021-08-31 | Massachusetts Institute Of Technology | Waveguide-coupled silicon-germanium photodetectors and fabrication methods for same |
JP6983590B2 (ja) * | 2017-09-08 | 2021-12-17 | 技術研究組合光電子融合基盤技術研究所 | 光変調器及びその製造方法 |
JP2020161674A (ja) * | 2019-03-27 | 2020-10-01 | 技術研究組合光電子融合基盤技術研究所 | 受光器 |
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2020
- 2020-09-18 WO PCT/JP2020/035537 patent/WO2021065578A1/ja active Application Filing
- 2020-09-18 JP JP2021550629A patent/JP7484925B2/ja active Active
- 2020-09-18 CN CN202080067867.2A patent/CN114514462A/zh active Pending
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- 2022-03-22 US US17/701,201 patent/US20220244582A1/en active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000066157A (ja) | 1998-08-25 | 2000-03-03 | Nec Corp | 光制御デバイスおよびその製造方法 |
WO2000079601A1 (fr) | 1999-06-23 | 2000-12-28 | Seiko Epson Corporation | Dispositif a semi-conducteur et procede de fabrication dudit dispositif |
JP2008103392A (ja) | 2006-10-17 | 2008-05-01 | Nissan Motor Co Ltd | 半導体装置および半導体装置の製造方法 |
US20100060970A1 (en) | 2008-09-06 | 2010-03-11 | Sifotonics Technologies (Usa) Inc. | Electro-optic silicon modulator |
JP2014036210A (ja) | 2012-08-10 | 2014-02-24 | Sharp Corp | 半導体装置およびその製造方法 |
JP2014126728A (ja) | 2012-12-27 | 2014-07-07 | Fujikura Ltd | 光導波路素子及び光変調器 |
JP2016536806A (ja) | 2013-09-18 | 2016-11-24 | 中国科学院蘇州納米技術与納米▲ファン▼生研究所 | テラヘルツ光源のチップ、光源デバイス、光源ユニット及びその製造方法 |
JP2018146736A (ja) | 2017-03-03 | 2018-09-20 | 株式会社豊田中央研究所 | 光90度位相器、ssb変調器および光ヘテロダイン直交検波レーザレーダ |
JP2018205459A (ja) | 2017-06-01 | 2018-12-27 | 株式会社フジクラ | 光導波路素子 |
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JPWO2021065578A1 (ja) | 2021-04-08 |
US20220244582A1 (en) | 2022-08-04 |
CN114514462A (zh) | 2022-05-17 |
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