JP7471810B2 - リングアセンブリ、基板支持体及び基板処理装置 - Google Patents

リングアセンブリ、基板支持体及び基板処理装置 Download PDF

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Publication number
JP7471810B2
JP7471810B2 JP2019225271A JP2019225271A JP7471810B2 JP 7471810 B2 JP7471810 B2 JP 7471810B2 JP 2019225271 A JP2019225271 A JP 2019225271A JP 2019225271 A JP2019225271 A JP 2019225271A JP 7471810 B2 JP7471810 B2 JP 7471810B2
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Japan
Prior art keywords
annular member
edge ring
disposed
ring
substrate
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JP2019225271A
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English (en)
Japanese (ja)
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JP2021097065A (ja
JP2021097065A5 (https=
Inventor
一輝 大嶋
信吾 小熊
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2019225271A priority Critical patent/JP7471810B2/ja
Priority to KR1020200168167A priority patent/KR20210075855A/ko
Priority to US17/117,177 priority patent/US20210183629A1/en
Publication of JP2021097065A publication Critical patent/JP2021097065A/ja
Publication of JP2021097065A5 publication Critical patent/JP2021097065A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
JP2019225271A 2019-12-13 2019-12-13 リングアセンブリ、基板支持体及び基板処理装置 Active JP7471810B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2019225271A JP7471810B2 (ja) 2019-12-13 2019-12-13 リングアセンブリ、基板支持体及び基板処理装置
KR1020200168167A KR20210075855A (ko) 2019-12-13 2020-12-04 링 어셈블리, 기판 지지체 어셈블리 및 기판 처리 장치
US17/117,177 US20210183629A1 (en) 2019-12-13 2020-12-10 Ring assembly, substrate support assembly and substrate processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019225271A JP7471810B2 (ja) 2019-12-13 2019-12-13 リングアセンブリ、基板支持体及び基板処理装置

Publications (3)

Publication Number Publication Date
JP2021097065A JP2021097065A (ja) 2021-06-24
JP2021097065A5 JP2021097065A5 (https=) 2022-09-27
JP7471810B2 true JP7471810B2 (ja) 2024-04-22

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JP2019225271A Active JP7471810B2 (ja) 2019-12-13 2019-12-13 リングアセンブリ、基板支持体及び基板処理装置

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Country Link
US (1) US20210183629A1 (https=)
JP (1) JP7471810B2 (https=)
KR (1) KR20210075855A (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12528652B2 (en) * 2021-07-15 2026-01-20 Kingtek Elec-Technology Co., Ltd. Pre-jig wafer carrier disc installation/uninstallation device and method thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005277369A (ja) 2003-09-05 2005-10-06 Tokyo Electron Ltd フォーカスリング及びプラズマ処理装置
JP2007515081A (ja) 2003-12-17 2007-06-07 ラム　リサーチ　コーポレーション プラズマ反応器のエッチング速度ドリフトを低減するための温度制御されたホットエッジリングアセンブリ
JP2010027860A (ja) 2008-07-18 2010-02-04 Tokyo Electron Ltd フォーカスリング及び基板載置台、並びにそれらを備えたプラズマ処理装置
JP2013168690A (ja) 2013-06-06 2013-08-29 Tokyo Electron Ltd プラズマ処理装置およびフォーカスリングとフォーカスリング部品
JP2018032857A (ja) 2016-08-23 2018-03-01 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 半導体プロセスモジュールのためのエッジリングまたはプロセスキット
JP2019102521A (ja) 2017-11-29 2019-06-24 東京エレクトロン株式会社 半導体製造装置用の部品及び半導体製造装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08339895A (ja) * 1995-06-12 1996-12-24 Tokyo Electron Ltd プラズマ処理装置
JP3121524B2 (ja) * 1995-06-07 2001-01-09 東京エレクトロン株式会社 エッチング装置
US6554954B2 (en) 2001-04-03 2003-04-29 Applied Materials Inc. Conductive collar surrounding semiconductor workpiece in plasma chamber
JP2018129386A (ja) 2017-02-08 2018-08-16 東京エレクトロン株式会社 プラズマ処理装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005277369A (ja) 2003-09-05 2005-10-06 Tokyo Electron Ltd フォーカスリング及びプラズマ処理装置
JP2007515081A (ja) 2003-12-17 2007-06-07 ラム　リサーチ　コーポレーション プラズマ反応器のエッチング速度ドリフトを低減するための温度制御されたホットエッジリングアセンブリ
JP2010027860A (ja) 2008-07-18 2010-02-04 Tokyo Electron Ltd フォーカスリング及び基板載置台、並びにそれらを備えたプラズマ処理装置
JP2013168690A (ja) 2013-06-06 2013-08-29 Tokyo Electron Ltd プラズマ処理装置およびフォーカスリングとフォーカスリング部品
JP2018032857A (ja) 2016-08-23 2018-03-01 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 半導体プロセスモジュールのためのエッジリングまたはプロセスキット
JP2019102521A (ja) 2017-11-29 2019-06-24 東京エレクトロン株式会社 半導体製造装置用の部品及び半導体製造装置

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Publication number Publication date
KR20210075855A (ko) 2021-06-23
JP2021097065A (ja) 2021-06-24
US20210183629A1 (en) 2021-06-17

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