KR20210075855A - 링 어셈블리, 기판 지지체 어셈블리 및 기판 처리 장치 - Google Patents

링 어셈블리, 기판 지지체 어셈블리 및 기판 처리 장치 Download PDF

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Publication number
KR20210075855A
KR20210075855A KR1020200168167A KR20200168167A KR20210075855A KR 20210075855 A KR20210075855 A KR 20210075855A KR 1020200168167 A KR1020200168167 A KR 1020200168167A KR 20200168167 A KR20200168167 A KR 20200168167A KR 20210075855 A KR20210075855 A KR 20210075855A
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KR
South Korea
Prior art keywords
annular member
edge ring
substrate
ring
assembly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020200168167A
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English (en)
Korean (ko)
Inventor
가즈키 오시마
신고 오구마
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20210075855A publication Critical patent/KR20210075855A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01L21/67069—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020200168167A 2019-12-13 2020-12-04 링 어셈블리, 기판 지지체 어셈블리 및 기판 처리 장치 Ceased KR20210075855A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019225271A JP7471810B2 (ja) 2019-12-13 2019-12-13 リングアセンブリ、基板支持体及び基板処理装置
JPJP-P-2019-225271 2019-12-13

Publications (1)

Publication Number Publication Date
KR20210075855A true KR20210075855A (ko) 2021-06-23

Family

ID=76320649

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020200168167A Ceased KR20210075855A (ko) 2019-12-13 2020-12-04 링 어셈블리, 기판 지지체 어셈블리 및 기판 처리 장치

Country Status (3)

Country Link
US (1) US20210183629A1 (https=)
JP (1) JP7471810B2 (https=)
KR (1) KR20210075855A (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12528652B2 (en) * 2021-07-15 2026-01-20 Kingtek Elec-Technology Co., Ltd. Pre-jig wafer carrier disc installation/uninstallation device and method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014090177A (ja) 2001-04-03 2014-05-15 Applied Materials Inc プラズマチャンバーにおいて半導体ワークピースを取り巻く導電性カラー
JP2018129386A (ja) 2017-02-08 2018-08-16 東京エレクトロン株式会社 プラズマ処理装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08339895A (ja) * 1995-06-12 1996-12-24 Tokyo Electron Ltd プラズマ処理装置
JP3121524B2 (ja) * 1995-06-07 2001-01-09 東京エレクトロン株式会社 エッチング装置
JP4640922B2 (ja) 2003-09-05 2011-03-02 東京エレクトロン株式会社 プラズマ処理装置
US7244336B2 (en) 2003-12-17 2007-07-17 Lam Research Corporation Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
JP5255936B2 (ja) 2008-07-18 2013-08-07 東京エレクトロン株式会社 フォーカスリング及び基板載置台、並びにそれらを備えたプラズマ処理装置
JP5602282B2 (ja) 2013-06-06 2014-10-08 東京エレクトロン株式会社 プラズマ処理装置およびフォーカスリングとフォーカスリング部品
US20180061696A1 (en) 2016-08-23 2018-03-01 Applied Materials, Inc. Edge ring or process kit for semiconductor process module
JP6932070B2 (ja) 2017-11-29 2021-09-08 東京エレクトロン株式会社 フォーカスリング及び半導体製造装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014090177A (ja) 2001-04-03 2014-05-15 Applied Materials Inc プラズマチャンバーにおいて半導体ワークピースを取り巻く導電性カラー
JP2018129386A (ja) 2017-02-08 2018-08-16 東京エレクトロン株式会社 プラズマ処理装置

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Publication number Publication date
JP2021097065A (ja) 2021-06-24
US20210183629A1 (en) 2021-06-17
JP7471810B2 (ja) 2024-04-22

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