JP7471426B2 - 電力用半導体素子の駆動制御回路、電力用半導体モジュール、および電力変換装置 - Google Patents

電力用半導体素子の駆動制御回路、電力用半導体モジュール、および電力変換装置 Download PDF

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Publication number
JP7471426B2
JP7471426B2 JP2022544935A JP2022544935A JP7471426B2 JP 7471426 B2 JP7471426 B2 JP 7471426B2 JP 2022544935 A JP2022544935 A JP 2022544935A JP 2022544935 A JP2022544935 A JP 2022544935A JP 7471426 B2 JP7471426 B2 JP 7471426B2
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Japan
Prior art keywords
gate
power semiconductor
gate current
current
gate charge
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JP2022544935A
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Japanese (ja)
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JPWO2022044123A1 (https=
JPWO2022044123A5 (https=
Inventor
剛司 堀口
康滋 椋木
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
    • H03K17/04206—Modifications for accelerating switching by feedback from the output circuit to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Power Conversion In General (AREA)
  • Protection Of Static Devices (AREA)
  • Electronic Switches (AREA)
JP2022544935A 2020-08-25 2020-08-25 電力用半導体素子の駆動制御回路、電力用半導体モジュール、および電力変換装置 Active JP7471426B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/032033 WO2022044123A1 (ja) 2020-08-25 2020-08-25 電力用半導体素子の駆動制御回路、電力用半導体モジュール、および電力変換装置

Publications (3)

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JPWO2022044123A1 JPWO2022044123A1 (https=) 2022-03-03
JPWO2022044123A5 JPWO2022044123A5 (https=) 2023-03-30
JP7471426B2 true JP7471426B2 (ja) 2024-04-19

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JP2022544935A Active JP7471426B2 (ja) 2020-08-25 2020-08-25 電力用半導体素子の駆動制御回路、電力用半導体モジュール、および電力変換装置

Country Status (5)

Country Link
US (1) US12149240B2 (https=)
JP (1) JP7471426B2 (https=)
CN (1) CN115997344A (https=)
DE (1) DE112020007545T5 (https=)
WO (1) WO2022044123A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7614818B2 (ja) * 2020-12-14 2025-01-16 株式会社東芝 電力変換装置
US20250096701A1 (en) * 2023-09-14 2025-03-20 GM Global Technology Operations LLC Dynamic switching speed control to reduce loss, bearing current and electromagnetic interference
FR3161520A1 (fr) * 2024-04-17 2025-10-24 Stmicroelectronics International N.V. Circuit de commande d’un transistor
CN119362360B (zh) * 2024-12-25 2025-06-03 浙江创芯集成电路有限公司 检测电路及电压转换电路

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007116900A1 (ja) 2006-04-06 2007-10-18 Mitsubishi Electric Corporation 半導体素子の駆動回路
JP2009225506A (ja) 2008-03-13 2009-10-01 Toshiba Corp 電力変換器
JP2019169825A (ja) 2018-03-23 2019-10-03 株式会社東芝 半導体装置及び電力変換装置
WO2019207847A1 (ja) 2018-04-27 2019-10-31 三菱電機株式会社 電力用半導体素子の駆動装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10137875C1 (de) * 2001-08-02 2003-04-30 Dialog Semiconductor Gmbh Lade/Entlade-Schutzschaltung
JP3883925B2 (ja) * 2002-07-30 2007-02-21 三菱電機株式会社 電力用半導体素子の駆動回路
JP6076223B2 (ja) * 2013-09-05 2017-02-08 三菱電機株式会社 電力用半導体素子の駆動回路
KR101639488B1 (ko) * 2014-12-10 2016-07-13 현대모비스 주식회사 암 쇼트 방지를 위한 게이트 구동 회로 및 방법
EP3076009A3 (en) * 2015-03-09 2017-01-04 Fuji Electric Co., Ltd. Semiconductor device
KR20170098062A (ko) * 2016-02-19 2017-08-29 엘에스산전 주식회사 역병렬 사이리스터의 고장 검출기
JP2017212870A (ja) * 2016-05-20 2017-11-30 株式会社デンソー スイッチング素子の駆動制御装置
JP6610468B2 (ja) * 2016-08-26 2019-11-27 株式会社デンソー 半導体装置
CN111244883B (zh) * 2020-02-20 2021-09-21 南京航空航天大学 综合对比栅极电荷和电压的SiC MOSFET短路保护电路及保护方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007116900A1 (ja) 2006-04-06 2007-10-18 Mitsubishi Electric Corporation 半導体素子の駆動回路
JP2009225506A (ja) 2008-03-13 2009-10-01 Toshiba Corp 電力変換器
JP2019169825A (ja) 2018-03-23 2019-10-03 株式会社東芝 半導体装置及び電力変換装置
WO2019207847A1 (ja) 2018-04-27 2019-10-31 三菱電機株式会社 電力用半導体素子の駆動装置

Also Published As

Publication number Publication date
US12149240B2 (en) 2024-11-19
US20230261653A1 (en) 2023-08-17
JPWO2022044123A1 (https=) 2022-03-03
WO2022044123A1 (ja) 2022-03-03
DE112020007545T5 (de) 2023-06-15
CN115997344A (zh) 2023-04-21

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