CN115997344A - 电力用半导体元件的驱动控制电路、电力用半导体模块以及电力变换装置 - Google Patents

电力用半导体元件的驱动控制电路、电力用半导体模块以及电力变换装置 Download PDF

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Publication number
CN115997344A
CN115997344A CN202080104008.6A CN202080104008A CN115997344A CN 115997344 A CN115997344 A CN 115997344A CN 202080104008 A CN202080104008 A CN 202080104008A CN 115997344 A CN115997344 A CN 115997344A
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CN
China
Prior art keywords
gate
semiconductor element
power semiconductor
gate current
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202080104008.6A
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English (en)
Chinese (zh)
Inventor
堀口刚司
椋木康滋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN115997344A publication Critical patent/CN115997344A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
    • H03K17/04206—Modifications for accelerating switching by feedback from the output circuit to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Power Conversion In General (AREA)
  • Protection Of Static Devices (AREA)
  • Electronic Switches (AREA)
CN202080104008.6A 2020-08-25 2020-08-25 电力用半导体元件的驱动控制电路、电力用半导体模块以及电力变换装置 Pending CN115997344A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/032033 WO2022044123A1 (ja) 2020-08-25 2020-08-25 電力用半導体素子の駆動制御回路、電力用半導体モジュール、および電力変換装置

Publications (1)

Publication Number Publication Date
CN115997344A true CN115997344A (zh) 2023-04-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080104008.6A Pending CN115997344A (zh) 2020-08-25 2020-08-25 电力用半导体元件的驱动控制电路、电力用半导体模块以及电力变换装置

Country Status (5)

Country Link
US (1) US12149240B2 (https=)
JP (1) JP7471426B2 (https=)
CN (1) CN115997344A (https=)
DE (1) DE112020007545T5 (https=)
WO (1) WO2022044123A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119362360A (zh) * 2024-12-25 2025-01-24 浙江创芯集成电路有限公司 检测电路及电压转换电路

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7614818B2 (ja) * 2020-12-14 2025-01-16 株式会社東芝 電力変換装置
US20250096701A1 (en) * 2023-09-14 2025-03-20 GM Global Technology Operations LLC Dynamic switching speed control to reduce loss, bearing current and electromagnetic interference
FR3161520A1 (fr) * 2024-04-17 2025-10-24 Stmicroelectronics International N.V. Circuit de commande d’un transistor

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10137875C1 (de) * 2001-08-02 2003-04-30 Dialog Semiconductor Gmbh Lade/Entlade-Schutzschaltung
US20040027762A1 (en) * 2002-07-30 2004-02-12 Mitsubishi Denki Kabushiki Kaisha Drive circuit for driving power semiconductor device
JP2015053749A (ja) * 2013-09-05 2015-03-19 三菱電機株式会社 電力用半導体素子の駆動回路
CN105952566A (zh) * 2015-03-09 2016-09-21 富士电机株式会社 半导体装置
JP2017147924A (ja) * 2016-02-19 2017-08-24 エルエス産電株式会社Lsis Co., Ltd. 逆並列サイリスタの故障検出器
CN109314510A (zh) * 2016-05-20 2019-02-05 株式会社电装 开关元件的驱动控制装置
CN109661763A (zh) * 2016-08-26 2019-04-19 株式会社电装 半导体装置
CN111244883A (zh) * 2020-02-20 2020-06-05 南京航空航天大学 综合对比栅极电荷和电压的SiC MOSFET短路保护电路及保护方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007116900A1 (ja) 2006-04-06 2007-10-18 Mitsubishi Electric Corporation 半導体素子の駆動回路
JP2009225506A (ja) * 2008-03-13 2009-10-01 Toshiba Corp 電力変換器
KR101639488B1 (ko) * 2014-12-10 2016-07-13 현대모비스 주식회사 암 쇼트 방지를 위한 게이트 구동 회로 및 방법
JP2019169825A (ja) 2018-03-23 2019-10-03 株式会社東芝 半導体装置及び電力変換装置
DE112019002204B4 (de) 2018-04-27 2022-08-11 Mitsubishi Electric Corporation Treibereinrichtung für ein leistungs-halbleiterelement

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10137875C1 (de) * 2001-08-02 2003-04-30 Dialog Semiconductor Gmbh Lade/Entlade-Schutzschaltung
US20040027762A1 (en) * 2002-07-30 2004-02-12 Mitsubishi Denki Kabushiki Kaisha Drive circuit for driving power semiconductor device
JP2015053749A (ja) * 2013-09-05 2015-03-19 三菱電機株式会社 電力用半導体素子の駆動回路
CN105952566A (zh) * 2015-03-09 2016-09-21 富士电机株式会社 半导体装置
JP2017147924A (ja) * 2016-02-19 2017-08-24 エルエス産電株式会社Lsis Co., Ltd. 逆並列サイリスタの故障検出器
CN109314510A (zh) * 2016-05-20 2019-02-05 株式会社电装 开关元件的驱动控制装置
CN109661763A (zh) * 2016-08-26 2019-04-19 株式会社电装 半导体装置
CN111244883A (zh) * 2020-02-20 2020-06-05 南京航空航天大学 综合对比栅极电荷和电压的SiC MOSFET短路保护电路及保护方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119362360A (zh) * 2024-12-25 2025-01-24 浙江创芯集成电路有限公司 检测电路及电压转换电路

Also Published As

Publication number Publication date
US12149240B2 (en) 2024-11-19
US20230261653A1 (en) 2023-08-17
JPWO2022044123A1 (https=) 2022-03-03
JP7471426B2 (ja) 2024-04-19
WO2022044123A1 (ja) 2022-03-03
DE112020007545T5 (de) 2023-06-15

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