JP7463725B2 - ｐ型不純物拡散組成物とその製造方法、それを用いた半導体素子の製造方法および太陽電池 - Google Patents

ｐ型不純物拡散組成物とその製造方法、それを用いた半導体素子の製造方法および太陽電池 Download PDF

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JP7463725B2
JP7463725B2 JP2019565963A JP2019565963A JP7463725B2 JP 7463725 B2 JP7463725 B2 JP 7463725B2 JP 2019565963 A JP2019565963 A JP 2019565963A JP 2019565963 A JP2019565963 A JP 2019565963A JP 7463725 B2 JP7463725 B2 JP 7463725B2
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type impurity
impurity diffusion
diffusion composition
semiconductor substrate
film
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JPWO2020116270A1 (ja
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剛 北田
邦彦 橘
旭 秋本
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Toray Industries Inc
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Toray Industries Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/077—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells the devices comprising monocrystalline or polycrystalline materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
JP2019565963A 2018-12-07 2019-11-27 ｐ型不純物拡散組成物とその製造方法、それを用いた半導体素子の製造方法および太陽電池 Active JP7463725B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018229582 2018-12-07
JP2018229582 2018-12-07
PCT/JP2019/046319 WO2020116270A1 (ja) 2018-12-07 2019-11-27 ｐ型不純物拡散組成物とその製造方法、それを用いた半導体素子の製造方法および太陽電池

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JPWO2020116270A1 JPWO2020116270A1 (ja) 2021-10-14
JP7463725B2 true JP7463725B2 (ja) 2024-04-09

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JP (1) JP7463725B2 (zh)
CN (1) CN113169247A (zh)
TW (1) TW202027291A (zh)
WO (1) WO2020116270A1 (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7428478B2 (ja) * 2019-05-24 2024-02-06 東京応化工業株式会社 拡散剤組成物、及び半導体基板の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010062223A (ja) 2008-09-01 2010-03-18 Japan Vam & Poval Co Ltd ホウ素拡散用塗布液
JP2014030011A (ja) 2012-07-04 2014-02-13 Nippon Synthetic Chem Ind Co Ltd:The ドーパント拡散用塗布液、およびその塗布方法、並びにそれを用いた半導体の製法、半導体
WO2016121641A1 (ja) 2015-01-30 2016-08-04 東レ株式会社 不純物拡散組成物、それを用いた半導体素子の製造方法および太陽電池
WO2018021117A1 (ja) 2016-07-26 2018-02-01 東レ株式会社 半導体素子の製造方法および太陽電池の製造方法
WO2018040990A1 (zh) 2016-08-31 2018-03-08 东丽先端材料研究开发（中国）有限公司 聚硅氧烷、半导体用材料、半导体及太阳能电池制备方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010062223A (ja) 2008-09-01 2010-03-18 Japan Vam & Poval Co Ltd ホウ素拡散用塗布液
JP2014030011A (ja) 2012-07-04 2014-02-13 Nippon Synthetic Chem Ind Co Ltd:The ドーパント拡散用塗布液、およびその塗布方法、並びにそれを用いた半導体の製法、半導体
WO2016121641A1 (ja) 2015-01-30 2016-08-04 東レ株式会社 不純物拡散組成物、それを用いた半導体素子の製造方法および太陽電池
WO2018021117A1 (ja) 2016-07-26 2018-02-01 東レ株式会社 半導体素子の製造方法および太陽電池の製造方法
WO2018040990A1 (zh) 2016-08-31 2018-03-08 东丽先端材料研究开发（中国）有限公司 聚硅氧烷、半导体用材料、半导体及太阳能电池制备方法

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WO2020116270A1 (ja) 2020-06-11
JPWO2020116270A1 (ja) 2021-10-14
CN113169247A (zh) 2021-07-23
TW202027291A (zh) 2020-07-16

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