JP7460898B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP7460898B2 JP7460898B2 JP2020077138A JP2020077138A JP7460898B2 JP 7460898 B2 JP7460898 B2 JP 7460898B2 JP 2020077138 A JP2020077138 A JP 2020077138A JP 2020077138 A JP2020077138 A JP 2020077138A JP 7460898 B2 JP7460898 B2 JP 7460898B2
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- 238000006243 chemical reaction Methods 0.000 claims description 224
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 54
- 238000004519 manufacturing process Methods 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 26
- 230000002093 peripheral effect Effects 0.000 claims description 23
- 238000004382 potting Methods 0.000 claims description 5
- 230000009977 dual effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 description 23
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- 239000011575 calcium Substances 0.000 description 8
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- 229910052712 strontium Inorganic materials 0.000 description 8
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- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 6
- 239000003086 colorant Substances 0.000 description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- -1 lutetium aluminum Chemical compound 0.000 description 5
- 229910052791 calcium Inorganic materials 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 229910052761 rare earth metal Inorganic materials 0.000 description 4
- 229910052684 Cerium Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052788 barium Inorganic materials 0.000 description 3
- 229910052794 bromium Inorganic materials 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
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- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910052693 Europium Inorganic materials 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 150000004645 aluminates Chemical class 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 2
- NJLLQSBAHIKGKF-UHFFFAOYSA-N dipotassium dioxido(oxo)titanium Chemical compound [K+].[K+].[O-][Ti]([O-])=O NJLLQSBAHIKGKF-UHFFFAOYSA-N 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000001579 optical reflectometry Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 102100032047 Alsin Human genes 0.000 description 1
- 101710187109 Alsin Proteins 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910017639 MgSi Inorganic materials 0.000 description 1
- RLMMPAFGVXFLEB-UHFFFAOYSA-N O[Si](O)(O)Cl.P Chemical compound O[Si](O)(O)Cl.P RLMMPAFGVXFLEB-UHFFFAOYSA-N 0.000 description 1
- 239000004954 Polyphthalamide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
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- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 229910052586 apatite Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 125000006267 biphenyl group Chemical group 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- 239000000378 calcium silicate Substances 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
- 229910052800 carbon group element Inorganic materials 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- VSIIXMUUUJUKCM-UHFFFAOYSA-D pentacalcium;fluoride;triphosphate Chemical compound [F-].[Ca+2].[Ca+2].[Ca+2].[Ca+2].[Ca+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O VSIIXMUUUJUKCM-UHFFFAOYSA-D 0.000 description 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
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- 229920001721 polyimide Polymers 0.000 description 1
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- 229920006375 polyphtalamide Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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Description
[実施形態1]
(第一波長変換部材20)
[実施形態2]
(支持体1)
(発光素子10)
(第一波長変換部材20)
(蛍光体)
(第二波長変換部材26)
(Y,Lu,Gd,Tb)3(Al,Ga,Sc)5O12:Ce
(式中、Aは、K+、Li+、Na+、Rb+、Cs+及びNH4+からなる群から選ばれる少なくとも1種であり、Mは、第4族元素及び第14族元素からなる群から選ばれる少なくとも1種の元素であり、aは0<a<0.2を満たす数を示す。)なお、このKSF蛍光体の詳細は、本願の出願人が先に特許出願した特願2014-122887号を参照できる。
(第一透光性部材30)
(第一透光性部材30)
(接合部材)
(第一光反射部材40)
(第二透光性部材50)
[実施形態2に係る発光装置の製造方法]
[実施形態3]
[実施形態4]
[実施形態4に係る発光装置400の製造方法]
1…支持体;
2…導電部材;
10、910…発光素子;11…発光素子の第一面;12…発光素子の第二面;
12a…発光面の中央領域;12b…発光面の周辺領域
20…第一波長変換部材;
21…第一波長変換部材の第一面;22…第一波長変換部材の第二面;
26、26’…第二波長変換部材;26a…中央部分;26b…周辺部分;
30…第一透光性部材;
40、940…第一光反射部材;
46…第二光反射部材;
50…第二透光性部材;51…レンズ部;52…鍔部
Claims (12)
- 支持体と、
前記支持体の上に配置される発光素子と、
前記発光素子の上に配置され、前記発光素子の外形よりも大きく、蛍光体を含む第一波長変換部材と、
前記第一波長変換部材の下面であって、前記発光素子の側面から前記発光素子の外形よりも突出した領域を連続的に覆う第一透光性部材と、
前記第一波長変換部材及び前記第一透光性部材の側方に配置された光反射性を有する第一光反射部材と、
前記第一波長変換部材の上に配置され、前記第一波長変換部材の中心部分上方の厚みよりも、周辺部分上方の厚みが薄く、前記発光素子が発する光を異なる波長の光に変換する第二波長変換部材と、
を備え、
前記第一光反射部材は、前記第一波長変換部材と面する側の厚さを、前記第一光反射部材の外周側の厚さよりも大きくしてなる発光装置。 - 請求項1に記載の発光装置であって、
前記第二波長変換部材が配置される面積は、平面視において前記第一波長変換部材の面積以下である発光装置。 - 請求項1または2に記載の発光装置であって、
前記発光素子が、平面視において矩形状であり、
前記第二波長変換部材が、平面視において隅部を面取りした矩形状又は円形状である発光装置。 - 請求項1~3のいずれか一項に記載の発光装置であって、さらに、
前記第一光反射部材の上面に配置された枠状の第二光反射部材を備え、
前記第二波長変換部材が、前記第二光反射部材の内側に配置されてなる発光装置。 - 請求項1~4のいずれか一項に記載の発光装置であって、
前記第一光反射部材の上面における凸形状により囲まれた凹部の内側に、前記第二波長変換部材が配置されている発光装置。 - 請求項1~5のいずれか一項に記載の発光装置であって、さらに、
前記第二波長変換部材及び第一光反射部材の上面を覆う半球状の第二透光性部材を備える発光装置。 - 請求項1~6のいずれか一項に記載の発光装置であって、
前記第一波長変換部材の下面が、平坦状である発光装置。 - 請求項1~7のいずれか一項に記載の発光装置であって、
前記第一波長変換部材が、前記発光素子の上面に接合されてなる発光装置。 - 支持体の上面に、発光面を有する発光素子を配置する工程と、
該発光面よりも大きい、蛍光体を含む第一波長変換部材を前記発光素子の上面に配置すると共に、前記発光素子の側面から前記第一波長変換部材の下面であって前記発光素子の外形よりも突出した領域を連続的に覆う第一透光性部材を形成する工程と、
前記第一波長変換部材の上面に、蛍光体を含む第二波長変換部材を、前記第一波長変換部材の中心部分上方の厚みよりも、周辺部分上方の厚みが薄くなるように形成する工程と、
前記発光素子、前記第一波長変換部材及び前記第一透光性部材の側方を囲むように第一光反射部材を、その前記第一波長変換部材の側面との界面の厚さが、前記第一光反射部材の外周の厚さよりも大きくなるように形成する工程と、
を含む発光装置の製造方法。 - 支持体の上面に、発光面を有する発光素子を配置する工程と、
該発光面よりも大きい、蛍光体を有する第一波長変換部材を前記発光素子の上面に配置すると共に、前記発光素子の側面から前記第一波長変換部材の下面であって前記発光素子の外形よりも突出した領域を連続的に覆う第一透光性部材を形成する工程と、
前記発光素子、前記第一波長変換部材及び前記第一透光性部材の側方を囲むように第一光反射部材を、その前記第一波長変換部材の側面との界面の厚さが、前記第一光反射部材の外周の厚さよりも大きくなるように形成する工程と、
前記第一光反射部材の上面に、枠状の第二光反射部材を形成する工程と、
前記第一波長変換部材の上面であって前記第二光反射部材の枠内に、蛍光体を含む第二波長変換部材を、前記第一波長変換部材の中心部分上方の厚みよりも、周辺部分上方の厚みが薄くなるように形成する工程と、
を含む発光装置の製造方法。 - 請求項9又は10に記載の発光装置の製造方法であって、
前記第二波長変換部材をポッティングにより形成する工程が、ポッティングにより行われてなる発光装置の製造方法。 - 請求項9~11のいずれか一項に記載の発光装置の製造方法であって、さらに、
前記第二波長変換部材及び第一光反射部材の上面を半球状の第二透光性部材で覆う工程を含む発光装置の製造方法。
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