JP7459875B2 - 炭化珪素半導体装置の製造方法及び炭化珪素半導体装置 - Google Patents
炭化珪素半導体装置の製造方法及び炭化珪素半導体装置 Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 78
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 78
- 239000004065 semiconductor Substances 0.000 title claims description 54
- 238000004519 manufacturing process Methods 0.000 title claims description 32
- 229910045601 alloy Inorganic materials 0.000 claims description 65
- 239000000956 alloy Substances 0.000 claims description 65
- 239000000758 substrate Substances 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 41
- 238000010438 heat treatment Methods 0.000 claims description 31
- 230000004888 barrier function Effects 0.000 claims description 22
- 229910052759 nickel Inorganic materials 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 96
- 239000010410 layer Substances 0.000 description 93
- 238000010586 diagram Methods 0.000 description 13
- 229910005883 NiSi Inorganic materials 0.000 description 10
- 239000011229 interlayer Substances 0.000 description 10
- 239000011734 sodium Substances 0.000 description 9
- 229910052700 potassium Inorganic materials 0.000 description 8
- 229910052708 sodium Inorganic materials 0.000 description 8
- 238000001878 scanning electron micrograph Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000002776 aggregation Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910005881 NiSi 2 Inorganic materials 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910021334 nickel silicide Inorganic materials 0.000 description 2
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910005487 Ni2Si Inorganic materials 0.000 description 1
- 229910012990 NiSi2 Inorganic materials 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
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Description
Niはドライエッチングが困難であることから微細加工が難しく、Ni膜が層間絶縁膜の上に形成されたままの状態で熱処理を行うと、Niが凝集してしまう。このようなNiが凝集した状態のものの上に、TiN等によりバリア層を成膜しても、バリア層にひびや割れが生じ、バリア層のひびや割れが生じている部分を通り、外部より、Na(ナトリウム)やK(カリウム)が、炭化珪素半導体装置に進入する場合がある。このようなNaやKが、炭化珪素半導体装置に進入すると、炭化珪素半導体装置の信頼性の低下を招くため、好ましくない。
本開示によれば、信頼性の低下を招くことなく、層間絶縁膜のコンタクトホールに、オーミック電極を形成できる。
最初に本開示の実施態様を列記して説明する。以下の説明では、同一または対応する要素には同一の符号を付し、それらについて同じ説明は繰り返さない。
以下、本開示の一実施形態について詳細に説明するが、本実施形態はこれらに限定されるものではない。
次に、本実施形態における半導体装置の製造方法について、図6から図14に基づき説明する。図6は、本開示の実施形態の半導体装置の製造方法のフローチャートである。図7~図14は、本開示の実施形態の半導体装置の製造方法の工程図である。
次に、本実施形態における半導体装置の一例について説明する。本実施形態における半導体装置は、図16に示されるように、例えば、縦型MOSFET(Metal Oxide Semiconductor Field Effect Transistor)である。具体的には、本実施形態における半導体装置は、炭化珪素基板10と、第1の合金層141と、第2の合金層142と、配線層152と、ゲート絶縁膜25と、ゲート電極71とを有する。ゲート電極71は、層間絶縁膜となる絶縁膜20に覆われており、絶縁膜20の上面20a等には、第2の合金層142が形成されている。炭化珪素基板10は、第1のn層11、第2のn層12、pボディ層13、nソース領域14、p領域18を有する。第1のn層11及びnソース領域14は、第2のn層12よりも多く不純物元素がドープされている。p領域18は、pボディ層13よりも多くの不純物元素がドープされている。
10a 一方の主面
10b 他方の主面
11 第1のn層
12 第2のn層
13 pボディ層
13a チャネル領域
14 nソース領域
18 p領域
20 絶縁膜
20a 上面
21 コンタクトホール
21a 底面
21b 側面
25 ゲート絶縁膜
30 Ni膜
30a Ni凝集部
31 NiSi合金層
40 TiN膜
50 配線層
71 ゲート電極
72 ドレイン電極
130 Si膜
140 Ni膜
141 第1の合金層
142 第2の合金層
151 バリア層
152 配線層
Claims (13)
- 炭化珪素基板を準備する工程と、
前記炭化珪素基板の一方の主面の上に絶縁膜を成膜する工程と、
前記絶縁膜にコンタクトホールを形成し、前記コンタクトホールの底面において、前記一方の主面を露出させる工程と、
前記コンタクトホールの底面及び側面、前記絶縁膜の上面にSi膜を形成する工程と、
前記コンタクトホールの底面における前記Si膜を除去し、前記一方の主面を露出させる工程と、
前記コンタクトホールの底面及び前記Si膜の上にNi膜を成膜する工程と、
前記Ni膜を成膜した後、熱処理を行う工程と、
を有し、
前記熱処理により、前記コンタクトホールの底面には、前記炭化珪素基板に含まれるSiと前記Ni膜によりオーミック電極となる第1の合金層が形成され、前記絶縁膜の上面には、前記Si膜と前記Ni膜により第2の合金層が形成される炭化珪素半導体装置の製造方法。 - 前記熱処理の温度は、800℃以上、1100℃以下である請求項1に記載の炭化珪素半導体装置の製造方法。
- 前記Ni膜を成膜する工程の後で前記熱処理を行う工程の前の状態において、前記絶縁膜の上面の前記Si膜及び前記Ni膜に含まれる単位面積あたりのSi原子の数とNi原子の数との和に対するSi原子の数の比率は、33%以上、67%以下である請求項1または請求項2に記載の炭化珪素半導体装置の製造方法。
- 前記Ni膜の膜厚は、5nm以上、100nm以下である請求項1から請求項3のいずれか一項に記載の炭化珪素半導体装置の製造方法。
- 前記Si膜の膜厚は、5nm以上、100nm以下であり、前記Ni膜の膜厚は、5nm以上、100nm以下である請求項1から請求項3のいずれか一項に記載の炭化珪素半導体装置の製造方法。
- 前記熱処理を行う工程の後、前記Ni膜のうち前記炭化珪素基板及び前記Si膜のどちらとも反応していない部分をウェットエッチングにより除去する工程を有する請求項1から請求項5のいずれか一項に記載の炭化珪素半導体装置の製造方法。
- 前記第2の合金層は、前記コンタクトホールの側面にも形成される請求項1から請求項6のいずれか一項に記載の炭化珪素半導体装置の製造方法。
- 第1主面と、前記第1主面とは反対側の第2主面とを有する炭化珪素基板と、
前記第1主面上に設けられた絶縁膜と、
前記絶縁膜に設けられたコンタクトホールと、
前記コンタクトホールの底面において前記炭化珪素基板と接触しているNiとSiとを含む第1の合金層と、
前記絶縁膜の上面に設けられたNiとSiとを含む第2の合金層と、
を有し、
前記第2の合金層に含まれるSiの濃度は、前記第1の合金層に含まれるSiの濃度よりも高く、
前記第1の合金層は、前記炭化珪素基板とオーミックコンタクトしている炭化珪素半導体装置。 - 前記第2の合金層は、前記コンタクトホールの側面にも設けられている請求項8に記載の炭化珪素半導体装置。
- 前記第2の合金層に含まれるSi原子とNi原子の和に対するSi原子の比率は、33%以上、67%以下である請求項8または請求項9に記載の炭化珪素半導体装置。
- 前記第2の合金層の上のバリア層と、
前記バリア層の上の配線層と、
を有する請求項8から請求項10のいずれか一項に記載の炭化珪素半導体装置。 - 前記バリア層は、TiNまたはTaNである請求項11に記載の炭化珪素半導体装置。
- 前記配線層は、Alを含む金属である請求項11または請求項12に記載の炭化珪素半導体装置。
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JP2013058587A (ja) | 2011-09-08 | 2013-03-28 | Seiko Epson Corp | 半導体素子の製造方法 |
JP2019075472A (ja) | 2017-10-17 | 2019-05-16 | 富士電機株式会社 | 半導体装置及びその製造方法 |
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JP2001185507A (ja) | 1999-12-24 | 2001-07-06 | New Japan Radio Co Ltd | 半導体装置及びその製造方法 |
JP2003158259A (ja) | 2001-09-07 | 2003-05-30 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2013058587A (ja) | 2011-09-08 | 2013-03-28 | Seiko Epson Corp | 半導体素子の製造方法 |
JP2019075472A (ja) | 2017-10-17 | 2019-05-16 | 富士電機株式会社 | 半導体装置及びその製造方法 |
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