JP7459399B1 - 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法 - Google Patents
反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法 Download PDFInfo
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- JP7459399B1 JP7459399B1 JP2023569982A JP2023569982A JP7459399B1 JP 7459399 B1 JP7459399 B1 JP 7459399B1 JP 2023569982 A JP2023569982 A JP 2023569982A JP 2023569982 A JP2023569982 A JP 2023569982A JP 7459399 B1 JP7459399 B1 JP 7459399B1
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- etching
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- 238000000034 method Methods 0.000 title claims description 50
- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 239000004065 semiconductor Substances 0.000 title claims description 27
- 238000005530 etching Methods 0.000 claims abstract description 246
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 107
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 101
- 239000001301 oxygen Substances 0.000 claims abstract description 101
- 239000006096 absorbing agent Substances 0.000 claims abstract description 88
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 35
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 28
- 238000001312 dry etching Methods 0.000 claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 23
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 25
- 238000012546 transfer Methods 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
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- 239000011737 fluorine Substances 0.000 description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
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- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 11
- 229910052801 chlorine Inorganic materials 0.000 description 11
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- 230000000694 effects Effects 0.000 description 9
- 238000001755 magnetron sputter deposition Methods 0.000 description 9
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- 239000010955 niobium Substances 0.000 description 7
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- 239000010941 cobalt Substances 0.000 description 3
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- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 3
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
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- 229910052741 iridium Inorganic materials 0.000 description 2
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- 229910052743 krypton Inorganic materials 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
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- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
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- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- CNCZOAMEKQQFOA-HZQGBTCBSA-N 4-[(2s,3s,4r,5r,6r)-4,5-bis(3-carboxypropanoyloxy)-2-methyl-6-[[(2r,3r,4s,5r,6s)-3,4,5-tris(3-carboxypropanoyloxy)-6-[2-(3,4-dihydroxyphenyl)-5,7-dihydroxy-4-oxochromen-3-yl]oxyoxan-2-yl]methoxy]oxan-3-yl]oxy-4-oxobutanoic acid Chemical compound OC(=O)CCC(=O)O[C@@H]1[C@H](OC(=O)CCC(O)=O)[C@@H](OC(=O)CCC(O)=O)[C@H](C)O[C@H]1OC[C@@H]1[C@@H](OC(=O)CCC(O)=O)[C@H](OC(=O)CCC(O)=O)[C@@H](OC(=O)CCC(O)=O)[C@H](OC=2C(C3=C(O)C=C(O)C=C3OC=2C=2C=C(O)C(O)=CC=2)=O)O1 CNCZOAMEKQQFOA-HZQGBTCBSA-N 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910000929 Ru alloy Inorganic materials 0.000 description 1
- 241001538551 Sibon Species 0.000 description 1
- 229910004531 TaB Inorganic materials 0.000 description 1
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- 230000002378 acidificating effect Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
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- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
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- 238000001459 lithography Methods 0.000 description 1
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- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
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- 238000002834 transmittance Methods 0.000 description 1
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- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022136730 | 2022-08-30 | ||
| JP2022136730 | 2022-08-30 | ||
| PCT/JP2023/030283 WO2024048387A1 (fr) | 2022-08-30 | 2023-08-23 | Ébauche de masque de type à réflexion, masque de type à réflexion et procédé pour le fabriquer, et procédé de fabrication de dispositif à semi-conducteur |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP7459399B1 true JP7459399B1 (ja) | 2024-04-01 |
Family
ID=90099608
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023569982A Active JP7459399B1 (ja) | 2022-08-30 | 2023-08-23 | 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7459399B1 (fr) |
| WO (1) | WO2024048387A1 (fr) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011197375A (ja) | 2010-03-19 | 2011-10-06 | Dainippon Printing Co Ltd | 反射型マスクの製造方法および該製造に用いられる反射型マスクブランク |
| JP2011249512A (ja) | 2010-05-26 | 2011-12-08 | Dainippon Printing Co Ltd | 反射型マスクの位相欠陥補正方法および反射型マスクの製造方法 |
| JP2012089580A (ja) | 2010-10-15 | 2012-05-10 | Renesas Electronics Corp | Ｅｕｖｌ用マスクの製造方法および半導体装置の製造方法 |
| JP2013149875A (ja) | 2012-01-23 | 2013-08-01 | Dainippon Printing Co Ltd | 位相欠陥の影響を低減するｅｕｖ露光用反射型マスクの製造方法 |
| JP2017161629A (ja) | 2016-03-08 | 2017-09-14 | 凸版印刷株式会社 | フォトマスクブランクとフォトマスクの製造方法 |
| WO2020175354A1 (fr) | 2019-02-28 | 2020-09-03 | Hoya株式会社 | Ébauche de masque réfléchissant, masque réfléchissant, son procédé de fabrication et procédé de fabrication de dispositif à semi-conducteur |
| JP2022098726A (ja) | 2020-12-22 | 2022-07-04 | ブラザー工業株式会社 | 画像形成装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5464186B2 (ja) * | 2011-09-07 | 2014-04-09 | 信越化学工業株式会社 | フォトマスクブランク、フォトマスク及びその製造方法 |
| JP6060636B2 (ja) * | 2012-01-30 | 2017-01-18 | 旭硝子株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランク、および、ｅｕｖリソグラフィ用反射型マスク |
| KR101801101B1 (ko) * | 2016-03-16 | 2017-11-27 | 주식회사 에스앤에스텍 | 위상반전 블랭크 마스크 및 포토 마스크 |
-
2023
- 2023-08-23 JP JP2023569982A patent/JP7459399B1/ja active Active
- 2023-08-23 WO PCT/JP2023/030283 patent/WO2024048387A1/fr unknown
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011197375A (ja) | 2010-03-19 | 2011-10-06 | Dainippon Printing Co Ltd | 反射型マスクの製造方法および該製造に用いられる反射型マスクブランク |
| JP2011249512A (ja) | 2010-05-26 | 2011-12-08 | Dainippon Printing Co Ltd | 反射型マスクの位相欠陥補正方法および反射型マスクの製造方法 |
| JP2012089580A (ja) | 2010-10-15 | 2012-05-10 | Renesas Electronics Corp | Ｅｕｖｌ用マスクの製造方法および半導体装置の製造方法 |
| JP2013149875A (ja) | 2012-01-23 | 2013-08-01 | Dainippon Printing Co Ltd | 位相欠陥の影響を低減するｅｕｖ露光用反射型マスクの製造方法 |
| JP2017161629A (ja) | 2016-03-08 | 2017-09-14 | 凸版印刷株式会社 | フォトマスクブランクとフォトマスクの製造方法 |
| WO2020175354A1 (fr) | 2019-02-28 | 2020-09-03 | Hoya株式会社 | Ébauche de masque réfléchissant, masque réfléchissant, son procédé de fabrication et procédé de fabrication de dispositif à semi-conducteur |
| JP2022098726A (ja) | 2020-12-22 | 2022-07-04 | ブラザー工業株式会社 | 画像形成装置 |
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| WO2024048387A1 (fr) | 2024-03-07 |
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