JP7455515B2 - セラミックス組成物及び当該セラミックス組成物を用いた電子部品 - Google Patents
セラミックス組成物及び当該セラミックス組成物を用いた電子部品 Download PDFInfo
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- JP7455515B2 JP7455515B2 JP2019063380A JP2019063380A JP7455515B2 JP 7455515 B2 JP7455515 B2 JP 7455515B2 JP 2019063380 A JP2019063380 A JP 2019063380A JP 2019063380 A JP2019063380 A JP 2019063380A JP 7455515 B2 JP7455515 B2 JP 7455515B2
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- 239000000203 mixture Substances 0.000 title claims description 169
- 239000013078 crystal Substances 0.000 claims description 137
- 239000000843 powder Substances 0.000 claims description 64
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- 238000005245 sintering Methods 0.000 description 100
- NWXHSRDXUJENGJ-UHFFFAOYSA-N calcium;magnesium;dioxido(oxo)silane Chemical compound [Mg+2].[Ca+2].[O-][Si]([O-])=O.[O-][Si]([O-])=O NWXHSRDXUJENGJ-UHFFFAOYSA-N 0.000 description 62
- 229910052637 diopside Inorganic materials 0.000 description 62
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- 229910010293 ceramic material Inorganic materials 0.000 description 35
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- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 10
- 238000011156 evaluation Methods 0.000 description 10
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 239000012298 atmosphere Substances 0.000 description 8
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- 229910001316 Ag alloy Inorganic materials 0.000 description 5
- 229910000881 Cu alloy Inorganic materials 0.000 description 5
- 239000010953 base metal Substances 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 4
- 229910052761 rare earth metal Inorganic materials 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 229910052788 barium Inorganic materials 0.000 description 3
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- 239000002131 composite material Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
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- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 2
- 229910000882 Ca alloy Inorganic materials 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
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- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 2
- 238000007606 doctor blade method Methods 0.000 description 2
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- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 2
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- 229920005989 resin Polymers 0.000 description 2
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- 229910052702 rhenium Inorganic materials 0.000 description 2
- 238000000790 scattering method Methods 0.000 description 2
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- 229910001720 Åkermanite Inorganic materials 0.000 description 2
- HGUFODBRKLSHSI-UHFFFAOYSA-N 2,3,7,8-tetrachloro-dibenzo-p-dioxin Chemical compound O1C2=CC(Cl)=C(Cl)C=C2OC2=C1C=C(Cl)C(Cl)=C2 HGUFODBRKLSHSI-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 238000007088 Archimedes method Methods 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MQIUGAXCHLFZKX-UHFFFAOYSA-N Di-n-octyl phthalate Natural products CCCCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCCC MQIUGAXCHLFZKX-UHFFFAOYSA-N 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
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- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
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- 239000003607 modifier Substances 0.000 description 1
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- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
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Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/16—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silicates other than clay
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- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/20—Silicates
- C01B33/24—Alkaline-earth metal silicates
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- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
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- C04B35/16—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silicates other than clay
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
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- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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- H05K3/46—Manufacturing multilayer circuits
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Description
{複合体の共振周波数の温度係数τf=Σ(各成分の体積分率(vol%)×各成分の共振周波数の温度係数τf)} ・・・(1)
{log(複合体の誘電率ε)=Σ(各成分の体積分率(vol%)×log(各成分の誘電率ε)} ・・・(2)
Ba4(Re(1-x),Bix)9.33Ti18O54・・・式(3)
Ba4(Nd0.9,Bi0.1)9.33Ti18O54
2 セラミックス基体
21,22,23 セラミックス層
3 ストリップ線路
4 グランドプレーン
5 ビア導体
6 外部電極
7 内部導体パターン
31 焼結助剤析出物
A1 焼結助剤領域
A2 主結晶領域
Claims (9)
- CaMgSi2O6で表される主相成分と、Li成分及びB成分を含有する添加成分と、を含むセラミックス組成物であって、
前記セラミックス組成物の断面の一部であり複数の単位観察領域に分割された観察視野において、前記添加成分の面積が0.5%以下の単位観察領域である主結晶領域が前記観察視野に対して占める主結晶領域占有率が30%以上であり、
前記観察視野は、50μm×40μmの領域であり、
前記単位観察領域は、5μm×5μm四方の領域であり、
前記セラミックス組成物は、前記主相成分100質量部に対し、B成分を酸化物換算で0.1~1質量部含有する、
セラミックス組成物。 - Ba4(Re(1-x),Bix)9.33Ti18O54で表される主相成分と、Li成分及びB成分を含有する添加成分と、を含むセラミックス組成物であって、
前記セラミックス組成物の断面の一部であり複数の単位観察領域に分割された観察視野において、前記添加成分の面積が0.5%以下の単位観察領域である主結晶領域が前記観察視野に対して占める主結晶領域占有率が30%以上であり、
前記観察視野は、50μm×40μmの領域であり、
前記単位観察領域は、5μm×5μm四方の領域である、
セラミックス組成物。 - 前記主結晶領域占有率が90%以下である、
請求項1又は請求項2に記載のセラミックス組成物。 - 前記Li成分の酸化物換算での含有量は、前記B成分の酸化物換算での含有量よりも多い、
請求項1から請求項3のいずれかに記載のセラミックス組成物。 - 前記主相成分100質量部に対し、Li成分を酸化物換算で0.3~1.5質量部含有し、
前記Li成分の酸化物換算での含有量が前記B成分の酸化物換算での含有量よりも多く、
前記Li成分及び前記B成分の含有量は合計で、酸化物換算で2.25質量部以下とされる、
請求項1、請求項3、又は請求項4のいずれか1項に記載のセラミックス組成物。 - 前記主相成分100質量部に対し、SrTiO3粉末を3.6~19質量部さらに含有する、
請求項5に記載のセラミックス組成物。 - 前記主相成分100質量部に対し、Ag成分を酸化物換算で0~3質量部さらに含有する、
請求項5又は請求項6に記載のセラミックス組成物。 - 前記主相成分100質量部に対し、Si成分を酸化物換算で0~1質量部さらに含有する、
請求項5から請求項7のいずれか1項に記載のセラミックス組成物。 - 請求項1から請求項8のいずれか1項に記載のセラミックス組成物から成るセラミックス層と、
前記セラミックス層の表面及び/又は内部にあって、前記セラミックス組成物と同時焼成して得られた導体層と、
を備える電子部品。
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JP2001278657A (ja) | 2000-01-24 | 2001-10-10 | Ngk Spark Plug Co Ltd | 低温焼成磁器組成物及びその製造方法並びにその低温焼成磁器組成物を用いた低温焼成配線基板 |
JP2004115295A (ja) | 2002-09-25 | 2004-04-15 | Nikko Co | 高周波用低温焼結磁器組成物及びその製造方法 |
WO2004076380A1 (ja) | 2003-02-28 | 2004-09-10 | Taiyo Yuden Co., Ltd. | セラミックス組成物及びセラミックス配線基板 |
JP2006273676A (ja) | 2005-03-30 | 2006-10-12 | Taiyo Yuden Co Ltd | セラミック組成物 |
JP2012148919A (ja) | 2011-01-19 | 2012-08-09 | Taiyo Yuden Co Ltd | セラミックス組成物及び電子部品 |
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JP2001278657A (ja) | 2000-01-24 | 2001-10-10 | Ngk Spark Plug Co Ltd | 低温焼成磁器組成物及びその製造方法並びにその低温焼成磁器組成物を用いた低温焼成配線基板 |
JP2004115295A (ja) | 2002-09-25 | 2004-04-15 | Nikko Co | 高周波用低温焼結磁器組成物及びその製造方法 |
WO2004076380A1 (ja) | 2003-02-28 | 2004-09-10 | Taiyo Yuden Co., Ltd. | セラミックス組成物及びセラミックス配線基板 |
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