JP7451737B2 - Ｅｕｖ検査用ビーム安定化兼基準補正方法及び装置 - Google Patents

Ｅｕｖ検査用ビーム安定化兼基準補正方法及び装置 Download PDF

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JP7451737B2
JP7451737B2 JP2022549874A JP2022549874A JP7451737B2 JP 7451737 B2 JP7451737 B2 JP 7451737B2 JP 2022549874 A JP2022549874 A JP 2022549874A JP 2022549874 A JP2022549874 A JP 2022549874A JP 7451737 B2 JP7451737 B2 JP 7451737B2
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illumination
intensity distribution
distribution signal
detector
cell
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JP2023515488A (ja
JP2023515488A5 (cg-RX-API-DMAC7.html
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ラリッサ ジャスキン
コンスタンティン ツィグツキン
デバシス デムンシ
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KLA Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/706833—Sampling plan selection or optimisation, e.g. select or optimise the number, order or locations of measurements taken per die, workpiece, lot or batch
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95676—Masks, reticles, shadow masks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/12—Circuits of general importance; Signal processing
    • G01N2201/127—Calibration; base line adjustment; drift compensation
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Immunology (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Pathology (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Signal Processing (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2022549874A 2020-02-20 2021-02-10 Ｅｕｖ検査用ビーム安定化兼基準補正方法及び装置 Active JP7451737B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202062978969P 2020-02-20 2020-02-20
US62/978,969 2020-02-20
US17/110,856 US11293880B2 (en) 2020-02-20 2020-12-03 Method and apparatus for beam stabilization and reference correction for EUV inspection
US17/110,856 2020-12-03
PCT/US2021/017306 WO2021167816A1 (en) 2020-02-20 2021-02-10 Method and apparatus for beam stabilization and reference correction for euv inspection

Publications (3)

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JP2023515488A JP2023515488A (ja) 2023-04-13
JP2023515488A5 JP2023515488A5 (cg-RX-API-DMAC7.html) 2023-11-13
JP7451737B2 true JP7451737B2 (ja) 2024-03-18

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US (1) US11293880B2 (cg-RX-API-DMAC7.html)
EP (1) EP4090947B1 (cg-RX-API-DMAC7.html)
JP (1) JP7451737B2 (cg-RX-API-DMAC7.html)
KR (1) KR102644776B1 (cg-RX-API-DMAC7.html)
TW (1) TWI845814B (cg-RX-API-DMAC7.html)
WO (1) WO2021167816A1 (cg-RX-API-DMAC7.html)

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JP7237872B2 (ja) * 2020-02-14 2023-03-13 株式会社東芝 検査装置、検査方法、及びプログラム
JP7273748B2 (ja) * 2020-02-28 2023-05-15 株式会社東芝 検査装置、検査方法、及びプログラム
KR20240018489A (ko) * 2021-06-09 2024-02-13 에이에스엠엘 네델란즈 비.브이. 애퍼처 아포디제이션을 갖는 구조적 조명을 이용한 레티클 입자 검출을 위한 검사 시스템
JP7703426B2 (ja) * 2021-11-16 2025-07-07 株式会社ニューフレアテクノロジー マスク検査装置及びマスク検査方法
US11852978B2 (en) 2022-03-07 2023-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. EUV lithography system with 3D sensing and tunning modules
US20240271996A1 (en) * 2023-02-09 2024-08-15 Kla Corporation Optical beam sensor with center transmissive cut-out
DE102024203350B4 (de) * 2024-04-11 2025-12-24 Carl Zeiss Smt Gmbh Energie-Detektions-Baugruppe für ein Beleuchtungssystem eines Maskeninspektionssystems zum Einsatz mit EUV-Beleuchtungslicht

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JP2012530902A (ja) 2009-06-19 2012-12-06 ケーエルエー−テンカー・コーポレーション パターン化用ｅｕｖマスク、マスクブランク、及びウェーハ上の欠陥を検出するｅｕｖ高処理能力検査システム
US20190049861A1 (en) 2017-08-11 2019-02-14 Asml Netherlands B.V. Methods and Apparatus for Determining the Position of a Spot of Radiation, Inspection Apparatus, Device Manufacturing Method
JP2019529971A (ja) 2016-09-12 2019-10-17 エーエスエムエル ネザーランズ ビー．ブイ． 補正を導き出すための方法及び装置、構造の特性を決定するための方法及び装置、デバイス製造方法
WO2020247324A1 (en) 2019-06-03 2020-12-10 Kla Corporation Determining one or more characteristics of light in an optical system

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US6963395B2 (en) 2001-07-09 2005-11-08 The Regents Of The University Of California Method and apparatus for inspecting an EUV mask blank
US6794671B2 (en) 2002-07-17 2004-09-21 Particle Sizing Systems, Inc. Sensors and methods for high-sensitivity optical particle counting and sizing
JP2005241290A (ja) * 2004-02-24 2005-09-08 Toshiba Corp 画像入力装置及び検査装置
US7749666B2 (en) * 2005-08-09 2010-07-06 Asml Netherlands B.V. System and method for measuring and analyzing lithographic parameters and determining optimal process corrections
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JP2016526702A (ja) 2013-06-17 2016-09-05 パウル・シェラー・インスティトゥート Ｅｕｖリソグラフィのアクティニックマスク検査用の走査型コヒーレント回折イメージング方法およびシステム
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JP2012530902A (ja) 2009-06-19 2012-12-06 ケーエルエー−テンカー・コーポレーション パターン化用ｅｕｖマスク、マスクブランク、及びウェーハ上の欠陥を検出するｅｕｖ高処理能力検査システム
JP2019529971A (ja) 2016-09-12 2019-10-17 エーエスエムエル ネザーランズ ビー．ブイ． 補正を導き出すための方法及び装置、構造の特性を決定するための方法及び装置、デバイス製造方法
US20190049861A1 (en) 2017-08-11 2019-02-14 Asml Netherlands B.V. Methods and Apparatus for Determining the Position of a Spot of Radiation, Inspection Apparatus, Device Manufacturing Method
WO2020247324A1 (en) 2019-06-03 2020-12-10 Kla Corporation Determining one or more characteristics of light in an optical system

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KR20220140757A (ko) 2022-10-18
WO2021167816A1 (en) 2021-08-26
TWI845814B (zh) 2024-06-21
TW202200990A (zh) 2022-01-01
EP4090947A1 (en) 2022-11-23
US11293880B2 (en) 2022-04-05
US20210262944A1 (en) 2021-08-26
EP4090947A4 (en) 2024-02-28
JP2023515488A (ja) 2023-04-13
KR102644776B1 (ko) 2024-03-06
EP4090947B1 (en) 2025-12-31

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