JP7410982B2 - 光学システム内の光の1つ又は複数の特性の決定 - Google Patents
光学システム内の光の1つ又は複数の特性の決定 Download PDFInfo
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- JP7410982B2 JP7410982B2 JP2021571760A JP2021571760A JP7410982B2 JP 7410982 B2 JP7410982 B2 JP 7410982B2 JP 2021571760 A JP2021571760 A JP 2021571760A JP 2021571760 A JP2021571760 A JP 2021571760A JP 7410982 B2 JP7410982 B2 JP 7410982B2
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Claims (27)
- 光学システム内の光の1つ又は複数の特性を決定するように構成されたシステムであって、前記システムは、
1つ又は複数の第1検出器であって、前記1つ又は複数の第1検出器は、1つ又は複数の第2角度と相互に排他的な1つ又は複数の第1角度で光源から放出された、190nmよりも短い1つ又は複数の波長を有する光を検出することであって、前記光が、前記第2角度で試料の照明用に光学システムによって前記光源から集められる、こと、及び前記1つ又は複数の第1検出器によって検出された前記光に応じた第1出力を生成すること、を行うように構成されている、1つ又は複数の第1検出器であり、前記1つ又は複数の第1検出器により検出された光は、集光し前記光源からの光を前記試料に向けるいずれの光学要素でも作用せず、
前記光学システム内の1つ又は複数の平面における前記光の1つ又は複数の特性を前記第1出力に基づいて決定するように構成された制御サブシステムと、
を備えている、システム。 - 前記光源と前記1つ又は複数の第1検出器との間の前記光の光学経路は、前記光源と前記試料との間の前記光の光学経路と空間的に一致しない、請求項1に記載のシステム。
- 前記光源は、前記光を前記1つ又は複数の第1角度及び前記1つ又は複数の第2角度で同時に放出するように構成されている、請求項1に記載のシステム。
- 前記1つ又は複数の第1検出器は、前記光を前記1つ又は複数の第1角度で検出するように構成され、一方、前記光学システムは、前記光を前記1つ又は複数の第2角度で集めて、前記1つ又は複数の第2角度で集められた前記光を前記試料の前記照明用に前記試料に向ける、請求項1に記載のシステム。
- 前記1つ又は複数の第1角度と前記1つ又は複数の第2角度とは、前記光源の対称軸に関して鏡面対称を有する、請求項1に記載のシステム。
- 前記1つ又は複数の第1角度と前記1つ又は複数の第2角度とは、前記光源の対称軸に関して鏡面対称を有しない、請求項1に記載のシステム。
- 1つ又は複数の追加の第1検出器を更に備え、前記追加の第1検出器は、前記1つ又は複数の第1角度及び前記1つ又は複数の第2角度と相互に排他的な1つ又は複数の追加の第1角度で前記光源から放出された前記光を検出すること、及び前記1つ又は複数の追加の第1検出器によって検出された前記光に応じた追加の第1出力を生成すること、を行うように構成されており、前記制御サブシステムは、前記第1出力及び前記追加の第1出力に基づいて前記1つ又は複数の平面における前記光の前記1つ又は複数の特性を決定するように更に構成されている、請求項1に記載のシステム。
- 前記1つ又は複数の第1検出器は、1つ又は複数の2次元検出器を備えている、請求項1に記載のシステム。
- 前記制御サブシステムは、前記光学システムの断層撮影法及び光学モデルを用いて、前記光の前記1つ又は複数の特性を決定するように更に構成されている、請求項1に記載のシステム。
- 前記1つ又は複数の特性は、前記試料での照明視野範囲内の空間入射強度分布を含む、請求項1に記載のシステム。
- 前記1つ又は複数の特性を決定することは、前記光源の3次元空間入射強度分布を決定することと、前記3次元空間入射強度分布から前記試料での前記1つ又は複数の特性を決定することと、を含む、請求項1に記載のシステム。
- 前記1つ又は複数の特性は、1つ又は複数の空間及び時間特性を含む、請求項1に記載のシステム。
- 前記制御サブシステムは、前記決定された1つ又は複数の特性に基づいて、前記光学システムの1つ又は複数のパラメータを変更するように更に構成されている、請求項1に記載のシステム。
- 前記制御サブシステムは、前記決定された1つ又は複数の特性を前記光学システムのコンピュータサブシステムに出力するように更に構成され、前記コンピュータサブシステムは、前記決定された1つ又は複数の特性に基づいて、前記光学システムの1つ又は複数のパラメータを変更するように構成されている、請求項1に記載のシステム。
- 前記光学システムによって、前記1つ又は複数の第2角度で集められた前記光を検出して、前記試料に向けられるように構成された1つ又は複数の較正検出器を更に備え、前記制御サブシステムは、前記1つ又は複数の較正検出器によって検出された前記光に基づいて、前記1つ又は複数の第1検出器の前記第1出力を較正するように更に構成されている、請求項1に記載のシステム。
- 前記光は、極端紫外光である、請求項1に記載のシステム。
- 前記光は、真空紫外光である、請求項1に記載のシステム。
- 前記光は、軟X線である、請求項1に記載のシステム。
- 前記試料は、レチクルである、請求項1に記載のシステム。
- 前記試料は、ウェーハである、請求項1に記載のシステム。
- 前記光学システムは、検査システムとして構成されている、請求項1に記載のシステム。
- 前記光学システムは、測定システムとして構成されている、請求項1に記載のシステム。
- 前記光学システムは、欠陥再調査システムとして構成されている、請求項1に記載のシステム。
- 前記光学システムは、リソグラフィツールとして構成されている、請求項1に記載のシステム。
- 試料についての情報を決定するように構成されたシステムであって、前記システムは、
190nmよりも短い1つ又は複数の波長を有する光を生成するように構成された光源と、
1つ又は複数の第1角度で前記光源から放出された前記光を検出すること、及び前記1つ又は複数の第1検出器によって検出された前記光に応じた第1出力を生成すること、を行うように構成された1つ又は複数の第1検出器と、
前記1つ又は複数の第1角度と相互に排他的な1つ又は複数の第2角度で、前記光源から放出された前記光を集めること、前記1つ又は複数の第2角度で集められた前記光を試料に向けること、及び前記試料からの前記光を、前記試料からの前記光に応じた第2出力を生成するように構成された1つ又は複数の第2検出器に向けること、を行うように構成された1つ又は複数の第2光学要素であり、前記1つ又は複数の第1検出器により検出された光は、集光し前記光源からの光を前記試料に向けるいずれの前記1つ又は複数の第2光学要素で作用せず、
前記第2出力に基づいて、前記試料についての情報を決定するように構成されたコンピュータサブシステムと、
前記1つ又は複数の第2角度で集められた前記光の経路内の1つ又は複数の平面における前記光の1つ又は複数の特性を前記第1出力に基づいて決定すること、並びに前記光源の1つ又は複数のパラメータ、前記1つ又は複数の第2光学要素の1つ又は複数のパラメータ、前記1つ又は複数の第2検出器の1つ又は複数のパラメータ、及び前記決定された1つ又は複数の特性に基づいて前記情報を決定するために前記コンピュータサブシステムによって用いられる1つ又は複数のパラメータのうちの少なくとも1つを変更すること、を行うように構成された制御サブシステムと、
を備えている、システム。 - 光学システム内の光の1つ又は複数の特性をコンピュータシステムで決定するために前記コンピュータシステム上で実行可能なプログラム命令を記憶する非一時的コンピュータ可読媒体であって、前記コンピュータシステムは、前記プログラム命令を実行することで、
1つ又は複数の第1角度で光源から放出された、190nmよりも短い1つ又は複数の波長を有する光を1つ又は複数の第1検出器によって検出するステップであって、前記1つ又は複数の第1検出器は、前記1つ又は複数の第1検出器によって検出された前記光に応じた第1出力を生成し、前記1つ又は複数の第1角度は、前記光が試料の照明用の光学システムによってその角度で前記光源から集められる1つ又は複数の第2角度と相互に排他的である、ステップであり、前記1つ又は複数の第1検出器により検出された光は、集光し前記光源からの光を前記試料に向けるいずれの光学要素上でも作用せず、
前記光学システム内の1つ又は複数の平面における前記光の1つ又は複数の特性を前記第1出力に基づいて決定するステップと、
を実行する、非一時的コンピュータ可読媒体。 - 光学システム内の光の1つ又は複数の特性を決定するための方法であって、前記方法は、
1つ又は複数の第1角度で光源から放出された、190nmよりも短い1つ又は複数の波長を有する光を1つ又は複数の第1検出器によって検出するステップであって、前記1つ又は複数の第1検出器は、前記1つ又は複数の第1検出器によって検出された前記光に応じた第1出力を生成し、前記1つ又は複数の第1角度は、前記光が試料の照明用の光学システムによって前記光源からその角度で集められる1つ又は複数の第2角度と相互に排他的である、ステップであり、前記1つ又は複数の第1検出器により検出された光は、集光し前記光源からの光を前記試料に向けるいずれの光学要素上でも作用せず、
前記光学システム内の1つ又は複数の平面における前記光の1つ又は複数の特性を前記第1出力に基づいて決定するステップと、
を含む、方法。
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040156052A1 (en) | 2002-07-25 | 2004-08-12 | Canon Kabushiki Kaisha | Optical apparatus, measurement method, and semiconductor device manufacturing method |
JP2012154902A (ja) | 2011-01-28 | 2012-08-16 | Lasertec Corp | 検査装置、及び検査方法 |
JP6249513B1 (ja) | 2017-03-27 | 2017-12-20 | レーザーテック株式会社 | 補正方法、補正装置及び検査装置 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5783758A (en) | 1980-09-04 | 1982-05-25 | Mitsubishi Heavy Ind Ltd | Gasket tightening method |
DE10119072C1 (de) | 2001-04-12 | 2002-12-05 | Aixuv Gmbh | Reflektometeranordnung und Verfahren zur Bestimmung des Reflexionsvermögens ausgewählter Messorte von spektral abhängig reflektierenden Messobjekten |
US6963395B2 (en) | 2001-07-09 | 2005-11-08 | The Regents Of The University Of California | Method and apparatus for inspecting an EUV mask blank |
JP2005294087A (ja) | 2004-04-01 | 2005-10-20 | Nikon Corp | 光源ユニット、照明光学装置、露光装置および露光方法 |
NL2003658A (en) | 2008-12-31 | 2010-07-01 | Asml Holding Nv | Euv mask inspection. |
US8050380B2 (en) | 2009-05-05 | 2011-11-01 | Media Lario, S.R.L. | Zone-optimized mirrors and optical systems using same |
DE102010062763A1 (de) | 2010-12-09 | 2012-06-14 | Carl Zeiss Smt Gmbh | Verfahren zum Vermessen eines optischen Systems |
EP2663897A4 (en) | 2011-01-11 | 2018-01-03 | KLA-Tencor Corporation | Apparatus for euv imaging and methods of using same |
JP5758727B2 (ja) | 2011-07-15 | 2015-08-05 | ルネサスエレクトロニクス株式会社 | マスク検査方法、およびマスク検査装置 |
DE102013204442A1 (de) | 2013-03-14 | 2014-10-02 | Carl Zeiss Smt Gmbh | Optischer Wellenleiter zur Führung von Beleuchtungslicht |
US9518935B2 (en) | 2013-07-29 | 2016-12-13 | Kla-Tencor Corporation | Monitoring changes in photomask defectivity |
US20150192459A1 (en) | 2014-01-08 | 2015-07-09 | Kla-Tencor Corporation | Extreme ultra-violet (euv) inspection systems |
US9625824B2 (en) | 2015-04-30 | 2017-04-18 | Taiwan Semiconductor Manufacturing Company, Ltd | Extreme ultraviolet lithography collector contamination reduction |
US11002688B2 (en) | 2016-02-02 | 2021-05-11 | Steven M. Ebstein | System for actinic inspection of semiconductor masks |
JP6004126B1 (ja) | 2016-03-02 | 2016-10-05 | レーザーテック株式会社 | 検査装置、及びそのフォーカス調整方法 |
CN114185250A (zh) * | 2016-12-20 | 2022-03-15 | Ev 集团 E·索尔纳有限责任公司 | 将一光敏层曝光之装置及方法 |
NL2018855B1 (en) * | 2017-05-05 | 2018-11-14 | Illumina Inc | Laser line illuminator for high throughput sequencing |
WO2018179068A1 (ja) * | 2017-03-27 | 2018-10-04 | ギガフォトン株式会社 | Euv光生成装置及びeuv光の重心位置の制御方法 |
US11156928B2 (en) | 2017-05-24 | 2021-10-26 | Asml Holding N.V. | Alignment mark for two-dimensional alignment in an alignment system |
EP3422102A1 (en) | 2017-06-26 | 2019-01-02 | ASML Netherlands B.V. | Methods and patterning devices and apparatuses for measuring focus performance of a lithographic apparatus, device manufacturing method |
US10451979B2 (en) | 2017-09-29 | 2019-10-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for EUV lithography and method of measuring focus |
US10624196B1 (en) | 2018-09-27 | 2020-04-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Laser source device and extreme ultraviolet lithography device |
-
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040156052A1 (en) | 2002-07-25 | 2004-08-12 | Canon Kabushiki Kaisha | Optical apparatus, measurement method, and semiconductor device manufacturing method |
JP2012154902A (ja) | 2011-01-28 | 2012-08-16 | Lasertec Corp | 検査装置、及び検査方法 |
JP6249513B1 (ja) | 2017-03-27 | 2017-12-20 | レーザーテック株式会社 | 補正方法、補正装置及び検査装置 |
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