TWI845814B - 用於極紫外光(euv)檢測之光束穩定化及參考校正的方法及裝置 - Google Patents

用於極紫外光(euv)檢測之光束穩定化及參考校正的方法及裝置 Download PDF

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TWI845814B
TWI845814B TW110105891A TW110105891A TWI845814B TW I845814 B TWI845814 B TW I845814B TW 110105891 A TW110105891 A TW 110105891A TW 110105891 A TW110105891 A TW 110105891A TW I845814 B TWI845814 B TW I845814B
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TW
Taiwan
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illumination
intensity distribution
images
distribution signal
illumination intensity
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TW110105891A
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English (en)
Chinese (zh)
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TW202200990A (zh
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蘿理莎 朱斯金
康士坦丁 茲古金
孟希 德巴西斯 德
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美商科磊股份有限公司
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/706833—Sampling plan selection or optimisation, e.g. select or optimise the number, order or locations of measurements taken per die, workpiece, lot or batch
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95676—Masks, reticles, shadow masks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/12—Circuits of general importance; Signal processing
    • G01N2201/127—Calibration; base line adjustment; drift compensation
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Immunology (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Pathology (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Signal Processing (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW110105891A 2020-02-20 2021-02-20 用於極紫外光(euv)檢測之光束穩定化及參考校正的方法及裝置 TWI845814B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US202062978969P 2020-02-20 2020-02-20
US62/978,969 2020-02-20
US17/110,856 US11293880B2 (en) 2020-02-20 2020-12-03 Method and apparatus for beam stabilization and reference correction for EUV inspection
US17/110,856 2020-12-03

Publications (2)

Publication Number Publication Date
TW202200990A TW202200990A (zh) 2022-01-01
TWI845814B true TWI845814B (zh) 2024-06-21

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TW110105891A TWI845814B (zh) 2020-02-20 2021-02-20 用於極紫外光(euv)檢測之光束穩定化及參考校正的方法及裝置

Country Status (6)

Country Link
US (1) US11293880B2 (cg-RX-API-DMAC7.html)
EP (1) EP4090947B1 (cg-RX-API-DMAC7.html)
JP (1) JP7451737B2 (cg-RX-API-DMAC7.html)
KR (1) KR102644776B1 (cg-RX-API-DMAC7.html)
TW (1) TWI845814B (cg-RX-API-DMAC7.html)
WO (1) WO2021167816A1 (cg-RX-API-DMAC7.html)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7237872B2 (ja) * 2020-02-14 2023-03-13 株式会社東芝 検査装置、検査方法、及びプログラム
JP7273748B2 (ja) * 2020-02-28 2023-05-15 株式会社東芝 検査装置、検査方法、及びプログラム
KR20240018489A (ko) * 2021-06-09 2024-02-13 에이에스엠엘 네델란즈 비.브이. 애퍼처 아포디제이션을 갖는 구조적 조명을 이용한 레티클 입자 검출을 위한 검사 시스템
JP7703426B2 (ja) * 2021-11-16 2025-07-07 株式会社ニューフレアテクノロジー マスク検査装置及びマスク検査方法
US11852978B2 (en) 2022-03-07 2023-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. EUV lithography system with 3D sensing and tunning modules
US20240271996A1 (en) * 2023-02-09 2024-08-15 Kla Corporation Optical beam sensor with center transmissive cut-out
DE102024203350B4 (de) * 2024-04-11 2025-12-24 Carl Zeiss Smt Gmbh Energie-Detektions-Baugruppe für ein Beleuchtungssystem eines Maskeninspektionssystems zum Einsatz mit EUV-Beleuchtungslicht

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201937310A (zh) * 2016-05-12 2019-09-16 荷蘭商Ａｓｍｌ荷蘭公司 獲得量測的方法、用於執行處理步驟的設備、度量衡設備、器件製造方法
TW202001231A (zh) * 2018-06-21 2020-01-01 美商克萊譚克公司 混合設計佈局以識別與光學鄰近校正相關之系統性缺陷

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6963395B2 (en) 2001-07-09 2005-11-08 The Regents Of The University Of California Method and apparatus for inspecting an EUV mask blank
US6794671B2 (en) 2002-07-17 2004-09-21 Particle Sizing Systems, Inc. Sensors and methods for high-sensitivity optical particle counting and sizing
JP2005241290A (ja) * 2004-02-24 2005-09-08 Toshiba Corp 画像入力装置及び検査装置
US7749666B2 (en) * 2005-08-09 2010-07-06 Asml Netherlands B.V. System and method for measuring and analyzing lithographic parameters and determining optimal process corrections
JP5350121B2 (ja) * 2008-09-11 2013-11-27 株式会社ニューフレアテクノロジー パターン検査装置及びパターン検査方法
KR101258344B1 (ko) 2008-10-31 2013-04-30 칼 짜이스 에스엠티 게엠베하 Ｅｕｖ 마이크로리소그래피용 조명 광학 기기
US8553217B2 (en) 2009-06-19 2013-10-08 Kla-Tencor Corporation EUV high throughput inspection system for defect detection on patterned EUV masks, mask blanks, and wafers
EP2663897A4 (en) 2011-01-11 2018-01-03 KLA-Tencor Corporation Apparatus for euv imaging and methods of using same
JP5676419B2 (ja) 2011-11-24 2015-02-25 株式会社日立ハイテクノロジーズ 欠陥検査方法およびその装置
DE102013204442A1 (de) 2013-03-14 2014-10-02 Carl Zeiss Smt Gmbh Optischer Wellenleiter zur Führung von Beleuchtungslicht
JP2016526702A (ja) 2013-06-17 2016-09-05 パウル・シェラー・インスティトゥート Ｅｕｖリソグラフィのアクティニックマスク検査用の走査型コヒーレント回折イメージング方法およびシステム
CN108873623B (zh) * 2013-06-18 2021-04-06 Asml荷兰有限公司 光刻方法和光刻系统
US10769769B2 (en) * 2016-07-01 2020-09-08 Kla-Tencor Corporation Dual mode inspector
US11243470B2 (en) 2016-09-12 2022-02-08 Asml Netherlands B.V. Method and apparatus for deriving corrections, method and apparatus for determining a property of a structure, device manufacturing method
JP6249513B1 (ja) 2017-03-27 2017-12-20 レーザーテック株式会社 補正方法、補正装置及び検査装置
US20190049861A1 (en) * 2017-08-11 2019-02-14 Asml Netherlands B.V. Methods and Apparatus for Determining the Position of a Spot of Radiation, Inspection Apparatus, Device Manufacturing Method
JP6462843B1 (ja) 2017-12-28 2019-01-30 レーザーテック株式会社 検出方法、検査方法、検出装置及び検査装置
US11499924B2 (en) 2019-06-03 2022-11-15 KLA Corp. Determining one or more characteristics of light in an optical system

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201937310A (zh) * 2016-05-12 2019-09-16 荷蘭商Ａｓｍｌ荷蘭公司 獲得量測的方法、用於執行處理步驟的設備、度量衡設備、器件製造方法
TW202001231A (zh) * 2018-06-21 2020-01-01 美商克萊譚克公司 混合設計佈局以識別與光學鄰近校正相關之系統性缺陷

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Publication number Publication date
KR20220140757A (ko) 2022-10-18
WO2021167816A1 (en) 2021-08-26
TW202200990A (zh) 2022-01-01
EP4090947A1 (en) 2022-11-23
US11293880B2 (en) 2022-04-05
US20210262944A1 (en) 2021-08-26
EP4090947A4 (en) 2024-02-28
JP2023515488A (ja) 2023-04-13
JP7451737B2 (ja) 2024-03-18
KR102644776B1 (ko) 2024-03-06
EP4090947B1 (en) 2025-12-31

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