JP7436530B2 - 集積回路チップ及びその形成方法 - Google Patents
集積回路チップ及びその形成方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 89
- 239000004065 semiconductor Substances 0.000 claims description 166
- 239000000758 substrate Substances 0.000 claims description 145
- 238000002161 passivation Methods 0.000 claims description 51
- 230000002093 peripheral effect Effects 0.000 claims description 34
- 238000002955 isolation Methods 0.000 claims description 32
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 31
- 238000000151 deposition Methods 0.000 claims description 16
- 238000000059 patterning Methods 0.000 claims description 15
- 239000007787 solid Substances 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 164
- 238000010586 diagram Methods 0.000 description 21
- 238000000206 photolithography Methods 0.000 description 12
- 238000000231 atomic layer deposition Methods 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- 238000005240 physical vapour deposition Methods 0.000 description 9
- 230000005855 radiation Effects 0.000 description 9
- 238000005137 deposition process Methods 0.000 description 8
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- 230000032798 delamination Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 230000003247 decreasing effect Effects 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000000284 resting effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002135 nanosheet Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Description
102:ボンディングパッド構造
102b:パッド本体
102p:パッド突出部
104:柱状構造
106:相互接続構造
108:半導体基板
108bs:半導体基板の裏側
108fs:半導体基板の表側
110:ワイヤ
110b:ボンディングワイヤ
112:ワイヤ間ビア
112b:ワイヤ間ボンディングビア
114、114a、114b、114c、114d:パッシベーション層
116:層間誘電(ILD)層
118:エッチング停止層(ESL)
118l:下方エッチング停止層(ESL)
118m:中間エッチング停止層(ESL)
118u:上方エッチング停止層(ESL)
120:バッファ層
122:金属間誘電(IMD)層
122l:下方金属間誘電(IMD)層
122m:中間金属間誘電(IMD)層
122u:上方金属間誘電(IMD)層
124:パッド開口
126:裏側誘電ライナ
128:裏側誘電層
130:トレンチ隔離構造
200、400、600、700、900A、900B、1100A、1100B、1200、1500:トップレイアウト図
302:中央ワイヤ間ボンディングビア
304:周辺ワイヤ間ボンディングビア
1102:開口
1402:半導体素子
1404:ソース/ドレイン領域
1406:ゲート誘電層
1408:ゲート電極
1410:側壁スペーサ構造
1412:コンタクトビア
1502:画素アレイ
1504:画素センサ
1602:光検出器
1604:ゲート積層体
1606:フローティング拡散ノード
1608:転送トランジスタ
1610:カラーフィルタ
1612:複合格子
1614:第1の格子誘電層
1616:第2の格子誘電層
1618:格子金属層
1620:第1のICチップ
1622:第2のICチップ
1624:再配線層
1626:再配線ビア
2002、2302、2702:ワイヤ開口
2304、2704:ビア開口
3002、3902:第1のパッド開口
3302、4002:第2のパッド開口
3600、4300:ブロック図
3602、3604、3606、3608、4302、4304、4306:ブロック
A、B、C、D、E:線
CV:コンタクトビアレベル
DR:素子領域
M1:第1のワイヤレベル
M2:第2のワイヤレベル
M3:第3のワイヤレベル
M4:第4のワイヤレベル
PR:周辺領域
Sv:スペーシング
Ttw、Tw:厚さ
TM:トップワイヤレベル
TV:トップビアレベル
V0:第0のビアレベル
V1:第1のビアレベル
V2:第2のビアレベル
V3:第3のビアレベル
Wv:幅
Claims (9)
- 集積回路(IC)チップであって、
半導体基板と、
前記半導体基板の表側に設けられる相互接続構造であって、前記相互接続構造は、前記半導体基板の前記表側において半導体素子から延設されるコンタクトビアのレベルを有し、第1のボンディングワイヤ、第2のボンディングワイヤ、及び単一のボンディングビアのみを備え、前記第1のボンディングワイヤ、前記第2のボンディングワイヤ、及び前記単一のボンディングビアは、柱状構造を形成し、前記柱状構造では、前記単一のボンディングビアが、前記第1及び第2のボンディングワイヤを分離し、前記第1のボンディングワイヤから前記第2のボンディングワイヤまで延設される前記相互接続構造と、
前記半導体基板の前記表側において前記相互接続構造を被覆するパッシベーション層と、
前記半導体基板の前記表側の反対側の裏側に挿入され、前記半導体基板を通じて前記第1のボンディングワイヤまで延設されるパッド構造と、を備え、
前記柱状構造は、前記コンタクトビアのレベルから前記パッシベーション層まで連続して延設され、
前記半導体基板の上面に平行な平面上への前記第1又は第2のボンディングワイヤの第1の投影は、第1の面積を有し、前記平面上への前記単一のボンディングビアの第2の投影は、前記第1の面積の10%以上である第2の面積を有し、
前記単一のボンディングビアのトップレイアウトは、ウェーハ受容試験パッドのレイアウト、または縁から縁まで中実の内部を備えた矩形であるICチップ。 - 前記第2の面積は、前記第1の面積の40%以上である請求項1に記載のICチップ。
- 前記第1のボンディングワイヤの厚さは、約1000オングストローム未満である請求項1又は2に記載のICチップ。
- 前記第2の投影は、前記第1の投影に完全に重なり合う請求項1~3のいずれか一項に記載のICチップ。
- 前記第1の投影は、前記第1のボンディングワイヤに対応し、前記平面上への前記第2のボンディングワイヤの第3の投影は、第3の面積を有し、前記第2の面積は、前記第3の面積の10%以上である請求項1~4のいずれか一項に記載のICチップ。
- 集積回路(IC)チップであって、
素子領域、及び前記素子領域を包囲する周辺領域を備える基板と、
前記素子領域に設けられた半導体素子と、
前記基板の下方側に設けられ、前記半導体素子と電気的に連結される相互接続構造であって、前記相互接続構造は、前記半導体素子から延設されるコンタクトビアのレベルを有し、第1のワイヤ、第2のワイヤ、及び単一のビアのみを備え、前記第1及び第2のボンディングワイヤと、前記単一のボンディングビアは、前記周辺領域に柱状構造を形成し、前記単一のビアは、前記第2のワイヤから延設され、界面にて前記第1のワイヤの表面と直接接触する前記相互接続構造と、
前記基板の前記下方側の前記相互接続構造を被覆するパッシベーション層と、
前記基板の上側から露出され、前記柱状構造と縦方向に積み重ねられ、前記柱状構造まで延設されるボンディングパッド構造と、を備え、
前記柱状構造は、前記コンタクトビアのレベルから前記パッシベーション層まで連続して延設され、
前記第1のワイヤの前記表面は、第1の面積を有し、前記界面は、前記第1の面積の約10%以上である第2の面積を有し、
前記単一のビアのトップレイアウトは、ウェーハ受容試験パッドのレイアウト、または縁から縁まで中実の内部を備えた矩形であるICチップ。 - 前記ボンディングパッド構造は、前記基板を通じて前記第1のワイヤまで延設される請求項6に記載のICチップ。
- 集積回路(IC)チップの形成方法であって、
基板の表側に延設されたトレンチ隔離構造を形成することと、
前記表側で前記トレンチ隔離構造に重ね合わせて、前記基板の前記表側において半導体素子から延設されるコンタクトビアのレベルを有し、第1のボンディングワイヤ、前記第1のボンディングワイヤに重ね合わせられる第2のボンディングワイヤ、及び前記第1のボンディングワイヤから前記第2のボンディングワイヤまで延設された単一のボンディングビアのみを備える相互接続構造を形成することと、
前記基板の前記表側において前記相互接続構造を被覆するパッシベーション層を蒸着することと、
前記基板の前記表側の反対側の裏側から、前記トレンチ隔離構造を通じて前記第1のボンディングワイヤまで延設されるパッド構造を形成することと、を備え、
前記第1及び第2のボンディングワイヤと、前記単一のボンディングビアは、前記コンタクトビアのレベルから前記パッシベーション層まで連続して延設される柱状外形を有する構造を部分的に形成し、
前記第1又は第2のボンディングワイヤのトップレイアウトは、第1の面積を有し、前記単一のボンディングビアのトップレイアウトは、前記第1の面積の10%以上の第2の面積を有し、
前記単一のボンディングビアのトップレイアウトは、ウェーハ受容試験パッドのレイアウト、または縁から縁まで中実の内部を備えた矩形である方法。 - 前記基板の前記表側において半導体素子と、前記基板から離間するように前記半導体素子から延設されるコンタクトビアと、を形成することと、
前記表側において前記半導体素子と前記コンタクトビアとを被覆する金属間誘電(IMD)層を蒸着することと、
前記IMD層をパターニングすることにより、共通の高さにて、前記トレンチ隔離構造及び前記半導体素子に各々重なり合う第1のワイヤ開口と、前記コンタクトビアを露出する第2のワイヤ開口とを形成することと、
前記第1及び第2のワイヤ開口を埋める金属層を蒸着することと、
前記金属層の上面が前記IMD層の上面と同じ高さになるまで、前記金属層に平坦化を施し、前記第1のワイヤ開口に前記第1のボンディングワイヤを形成することと、をさらに備える請求項8に記載の方法。
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