JP7394533B2 - 電子装置 - Google Patents

電子装置 Download PDF

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Publication number
JP7394533B2
JP7394533B2 JP2019056742A JP2019056742A JP7394533B2 JP 7394533 B2 JP7394533 B2 JP 7394533B2 JP 2019056742 A JP2019056742 A JP 2019056742A JP 2019056742 A JP2019056742 A JP 2019056742A JP 7394533 B2 JP7394533 B2 JP 7394533B2
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Japan
Prior art keywords
electronic device
common electrode
insulating layer
light emitting
layer
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Active
Application number
JP2019056742A
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English (en)
Japanese (ja)
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JP2019174807A (ja
Inventor
宏浜 柯
建志 陳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Innolux Corp
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Innolux Corp
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Publication of JP2019174807A publication Critical patent/JP2019174807A/ja
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Publication of JP7394533B2 publication Critical patent/JP7394533B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Device Packages (AREA)
JP2019056742A 2018-03-29 2019-03-25 電子装置 Active JP7394533B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201862649995P 2018-03-29 2018-03-29
US62/649,995 2018-03-29
CN201810579946.6 2018-06-07
CN201810579946.6A CN110323212A (zh) 2018-03-29 2018-06-07 电子装置

Publications (2)

Publication Number Publication Date
JP2019174807A JP2019174807A (ja) 2019-10-10
JP7394533B2 true JP7394533B2 (ja) 2023-12-08

Family

ID=68112650

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019056742A Active JP7394533B2 (ja) 2018-03-29 2019-03-25 電子装置

Country Status (3)

Country Link
JP (1) JP7394533B2 (zh)
KR (1) KR20190114738A (zh)
CN (2) CN110323212A (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112670309B (zh) * 2020-01-14 2023-06-27 友达光电股份有限公司 显示面板
TWI739552B (zh) * 2020-03-20 2021-09-11 錼創顯示科技股份有限公司 微型發光二極體顯示面板
US11450796B2 (en) 2020-03-20 2022-09-20 PlayNitride Display Co., Ltd. Micro light emitting diode display panel
KR20220072535A (ko) 2020-11-25 2022-06-02 삼성전자주식회사 디스플레이 모듈
US20240297176A1 (en) * 2022-06-15 2024-09-05 Boe Technology Group Co., Ltd. Array baseplate and preparation method thereof, and display device

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008062783A1 (fr) 2006-11-20 2008-05-29 Nikon Corporation Dispositif del et procédé de fabrication correspondant
JP2008129043A (ja) 2006-11-16 2008-06-05 Toyoda Gosei Co Ltd Ｌｅｄ発光表示装置
JP2017054120A (ja) 2015-09-09 2017-03-16 群創光電股▲ふん▼有限公司Ｉｎｎｏｌｕｘ Ｃｏｒｐｏｒａｔｉｏｎ ディスプレイデバイス
WO2017094461A1 (ja) 2015-12-01 2017-06-08 シャープ株式会社 画像形成素子
US20170323873A1 (en) 2015-09-04 2017-11-09 PlayNitride Inc. Light emitting device
US20170345801A1 (en) 2016-05-25 2017-11-30 Innolux Corporation Display apparatus and fabricating method thereof
CN107742636A (zh) 2017-10-25 2018-02-27 上海天马微电子有限公司 一种显示面板和显示装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01100176U (zh) * 1987-12-24 1989-07-05
JPH0553511A (ja) * 1991-08-28 1993-03-05 Toyoda Gosei Co Ltd カラーデイスプレイ装置
WO2003017320A1 (en) * 2001-08-21 2003-02-27 Nam-Young Kim Lamp utilizing a light emitted diode
US9461209B2 (en) * 2013-11-27 2016-10-04 Epistar Corporation Semiconductor light-emitting device
KR101673259B1 (ko) * 2015-02-17 2016-11-07 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치
CN204596351U (zh) * 2015-03-27 2015-08-26 深圳市联建光电股份有限公司 一种低反射率的led灯板和led显示屏
KR102393374B1 (ko) * 2015-08-31 2022-05-03 삼성디스플레이 주식회사 표시 장치 및 상기 표시 장치의 제조 방법
CN107302011B (zh) * 2016-04-14 2020-11-20 群创光电股份有限公司 显示装置
CN105810718B (zh) * 2016-05-06 2019-03-15 京东方科技集团股份有限公司 一种oled显示面板及其制备方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008129043A (ja) 2006-11-16 2008-06-05 Toyoda Gosei Co Ltd Ｌｅｄ発光表示装置
WO2008062783A1 (fr) 2006-11-20 2008-05-29 Nikon Corporation Dispositif del et procédé de fabrication correspondant
US20170323873A1 (en) 2015-09-04 2017-11-09 PlayNitride Inc. Light emitting device
JP2017054120A (ja) 2015-09-09 2017-03-16 群創光電股▲ふん▼有限公司Ｉｎｎｏｌｕｘ Ｃｏｒｐｏｒａｔｉｏｎ ディスプレイデバイス
WO2017094461A1 (ja) 2015-12-01 2017-06-08 シャープ株式会社 画像形成素子
US20170345801A1 (en) 2016-05-25 2017-11-30 Innolux Corporation Display apparatus and fabricating method thereof
CN107742636A (zh) 2017-10-25 2018-02-27 上海天马微电子有限公司 一种显示面板和显示装置

Also Published As

Publication number Publication date
CN110323212A (zh) 2019-10-11
KR20190114738A (ko) 2019-10-10
JP2019174807A (ja) 2019-10-10
CN113410218A (zh) 2021-09-17

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