JP7394533B2 - electronic equipment - Google Patents

Description

TECHNICAL FIELD The present invention relates to electronic devices, and more particularly to electronic devices with a common electrode design.

Display device-related technology continues to advance day by day, and many display devices are evolving toward active types. Light emitting diodes are used as light emitting elements, and in addition to being applied to backlight modules of liquid crystal display devices, they are also directly applied as display devices to public information displays (PID), lighting, decoration, etc.

However, in the conventional technology mentioned above, many of the conventional junction type electronic devices use passive electronic devices, and passive electronic devices require a large number of integrated circuit (IC) devices and are expensive. It has disadvantages such as being too expensive and consuming a lot of power. It has been difficult to convert the active electronic device into a bonding device because the circuit is easily crushed or destroyed by the heat and stress generated during bonding of the light emitting diodes in the active electronic device.

Therefore, the inventors of the present invention believed that the above-mentioned drawbacks could be improved, and as a result of intensive studies, they discovered that it is possible to avoid crushing and destruction of the circuits and electronic elements below when bonding light emitting diodes.

The present invention has been made in view of these circumstances, and its purpose is to provide an electronic device.
In other words, by designing the common electrode and electrically connecting the common electrode to the pads of each light emitting element, the pressure and heat when bonding the light emitting elements is evenly distributed, preventing crushing or destruction of the circuit. An object of the present invention is to provide an electronic device that can avoid the above problems and improve the yield and reliability of the process.

In order to solve the above problems, an electronic device according to an aspect of the present invention includes a substrate, a plurality of active elements installed on the substrate, and a common electrode installed on the active elements and including a plurality of openings. and a plurality of light emitting elements each having a first pad and a second pad installed on the common electrode and located on the same side, the first pad corresponding to one of the openings. and electrically connected to one of the active elements, and the second pad is electrically connected to the common electrode.

FIG. 1(A) is a cross-sectional view showing a portion of an electronic device according to an embodiment of the present invention, and FIG. 1(B) is a schematic diagram taken along the dotted line in FIG. 1(A). FIG. 2 is a cross-sectional view showing a portion of an electronic device according to an embodiment of the present invention. FIG. 3(A) is a schematic diagram showing a portion of an electronic device according to another embodiment of the present invention, and FIG. 3(B) is a schematic diagram showing a portion of an electronic device according to another embodiment of the present invention. It is a diagram. FIG. 4(A) is a schematic diagram showing a portion of an electronic device according to another embodiment of the present invention, and FIG. 4(B) is a schematic diagram showing a portion of an electronic device according to another embodiment of the present invention. It is a diagram. FIG. 5 is a cross-sectional view showing a portion of an electronic device according to another embodiment of the present invention. FIG. 6 is a schematic diagram illustrating a partial electronic device according to another embodiment of the present invention. FIG. 7(A) is a bird's-eye view of an electronic device according to an embodiment of the present invention, and FIG. 7(B) is a bird's-eye view of an electronic device according to an embodiment of the present invention. 7(C) is a bird's-eye view of an electronic device according to an embodiment of the present invention, and FIG. 7(D) is a bird's-eye view of an electronic device according to an embodiment of the present invention. FIG. 8 is a cross-sectional view showing a portion of an electronic device according to another embodiment of the present invention.

Embodiments of the present invention will be described in detail below with reference to the drawings.
It goes without saying that the present invention is not limited to the following examples, and can be modified as desired without departing from the gist of the present invention.
Further, ordinal numbers such as "first", "second", "third", etc. used in the specification and claims are merely terms modifying the claimed member, and these are terms used to modify the claimed member. It does not represent any prior ordinal number, it does not represent the order of a particular claimed member versus another claimed member, or it does not represent a manufacturing method order. These ordinal numbers are only used to clearly distinguish one named claim member from another claim member with the same name.
Additionally, the terms "on", "above", or "above" as used herein and in the claims refer to two members in direct or indirect contact. It is a term.

FIG. 1(A) is a cross-sectional view showing a portion of an electronic device according to an embodiment of the present invention, and FIG. 1(B) is a schematic diagram taken along the dotted line shown in FIG. 1(A). .
As shown in FIG. 1, the electronic device of the present invention includes a substrate 1, an active layer 2, an insulating layer 3, a conductive unit 4, a common electrode 5, a conductive bump 7, and a plurality of light emitting elements 6. and.
The common electrode 5 has a plurality of openings 53, and each light emitting element 6 includes a first pad 61 and a second pad 62.
The first pad 61 passes through the conductive bump 7 in one of the openings 53 and through the conductive unit 4 of the insulating layer 3 to provide an electrical connection to the active layer 2. connected to.
Further, the second pad 62 is electrically connected to the common electrode 5.

Since the circuit is easily crushed or destroyed by the heat and stress generated when the light emitting elements are bonded, the present invention uses a common electrode design to evenly disperse the pressure and heat when the light emitting elements are bonded, and This avoids crushing and destruction of circuits and increases process yield and reliability.

Specifically, FIG. 2 is a cross-sectional view showing a portion of an electronic device according to an embodiment of the present invention.
First, a substrate 1 is provided, and then an active layer 2 comprising a plurality of active device TFTs is formed on said substrate 1.
These active element TFTs include a semiconductor layer 21, a gate insulating layer 22 provided on the semiconductor layer 21, a gate 23 provided on the gate insulating layer 22, and a third insulating layer provided on the gate 23. 24, and a first electrode 25 and a second electrode 26 disposed on the third insulating layer 24.
These active element TFTs are thin film transistors in the embodiment of the present invention, and the first electrode 25 and the second electrode 26 are each a drain pole or a source pole.

Next, a first insulating layer 31 is formed on the active layer 2, and then a conductive unit 4 is formed.
The first insulating layer includes a through hole 311 , and the conductive unit 4 is installed in the through hole 311 and electrically connected to the first electrode 25 .

A fourth insulating layer 32 is formed on the conductive unit 4 .
A first patterned metal layer (including 51 and 71) is formed on the fourth insulating layer 32 by a lithography process.
Then, a fifth insulating layer 33 is formed on the first patterned metal layer (including 51, 71), and the fifth insulating layer 33 is formed on the first patterned metal layer (including 51, 71). A corresponding second opening 331 is provided.
A second patterned metal layer (including 52 and 72) is deposited at the first patterned metal layer (including 51 and 71) by a sputtering process, thereby forming the display panel of this embodiment.
Finally, the light emitting element 6 is bonded to the display panel by surface mount technique (SMT) to form the electronic device of this embodiment.
Incidentally, each of the above-mentioned layers is merely an example of the embodiment, and the present invention is not limited thereto.

Here, the substrate 1 is a quartz substrate, a glass substrate, a wafer, a sapphire substrate, or another hard substrate.
The substrate 1 is a flexible substrate or a thin film, and its material includes polycarbonate (PC), polyimide (PI), polypropylene (PP), polyethylene terephthalate (PET), or other plastic materials.
The gate 23 has a single-layer or multi-layer structure, and is made of a metal such as copper (Cu), titanium (Ti), or aluminum (Al), and is manufactured from a metal alloy or a conductive material. is not limited to this.
Materials for the gate insulating layer 22, the first insulating layer 31, the third insulating layer 24, the fourth insulating layer 32, and the fifth insulating layer 33 include silicon nitride, silicon oxide, silicon oxynitride, and aluminum oxide. , a polymer, a photoresist, or a mixture thereof, and may be composed of the same or different materials, but the present invention is not limited thereto.
Copper (Cu), titanium (Ti), aluminum (Al), or a metal material such as a conductive material is used as the material for the first electrode 25, the second electrode 26, and the conductive unit 4. but not limited to.
The first patterned metal layers 51, 71 and the second patterned metal layers 52, 72 have a single layer or multilayer structure, and are made of copper (Cu), nickel (Ni), gold (Au), Metal materials such as silver (Ag), metal alloys, or conductive materials may be used in the fabrication, but the invention is not limited thereto.
Here, the light emitting element 6 is a light emitting diode, but the present invention is not limited to this.

The electronic device of this embodiment completed through the above-described process includes a substrate 1, a plurality of active element TFTs installed on the substrate 1, and a plurality of openings 53 installed in the active element TFTs. It includes a common electrode 5 and a plurality of light emitting elements 6 installed on the common electrode 5.
Each light emitting device 6 includes a first pad 61 and a second pad 62 located on the same side.
The first pad 61 is installed to correspond to one of the openings 53 and is electrically connected to one of the active element TFTs, and the second pad 62 is installed to correspond to one of the openings 53 and electrically connected to one of the active element TFTs. It is electrically connected to the common electrode 5.

Due to the design of the common electrode 5, when the light emitting elements 6 are bonded, pressure and heat at the time of bonding are uniformly dispersed by the common electrode 5, thereby avoiding damage to the circuit below.
Furthermore, since the common electrode 5 blocks the light rays, the heat dissipation area increases, thereby reducing the leakage caused by the light rays or the leakage caused by high heat.

In this embodiment, the common electrode 5 includes a first common electrode layer 51 (sometimes referred to as a first patterned metal layer) and a second common electrode layer 52 (sometimes referred to as a second patterned metal layer). ).
The thickness T1 of the common electrode 5 is 0.02 μm or more and 100 μm or less.
Further, another possible thickness range may be 0.2 μm or more and 10 μm or less, and another possible thickness range may be 2 μm or more and 5 μm or less, but the present invention is not limited thereto.

In this embodiment, the electronic device further comprises a conductive bump 7 placed in one of the openings 53.
The conductive bump 7 passes through one of the openings 53, and the first pad 61 is electrically connected to one of the active element TFTs through the conductive bump 7. Connected.
Here, the conductive bump 7 includes a first metal layer 71 (sometimes referred to as a first patterned metal layer) and a second metal layer 72 (sometimes referred to as a second patterned metal layer). Contains.
The thickness T2 of the conductive bump 7 is 0.02 μm or more and 100 μm or less, and other possible thickness ranges include 0.2 μm or more and 10 μm or less, and other possible thicknesses. The range of the thickness may be 2 μm or more and 5 μm or less, but the present invention is not limited to this.
As shown in FIG. 2, the conductive bump 7 and the common electrode 5 are separated by a distance D1, and the distance D1 is 2 μm or more and 100 μm or less, for example, 2 μm or more and 10 μm or less. However, the present invention is not limited thereto.
In this embodiment, the first metal layer 71 and the second metal layer 72 are a cathode or an anode.

In this embodiment, the electronic device further includes a first insulating layer 31 installed between the active element TFT and the common electrode 5, and the first insulating layer 31 includes a through hole 311.
The electronic device further comprises a conductive unit 4 installed in the through hole 311, and the conductive bump 7 is electrically connected to one of the active element TFTs via the conductive unit 4. be done.
In this embodiment, the first insulating layer 31 may selectively have a multilayer structure, for example, the first insulating layer 31 may include a passivation layer 312 and a planar layer 313 disposed on the passivation layer 312. However, the present invention is not limited thereto.
The materials of the passivation layer 312 and the planar layer 313 include, but are not limited to, silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, polymer, photoresist, or a mixture thereof.

Further, in one embodiment, as shown in FIG. The electronic device further includes a substrate platform 10 .
The substrate 1 includes at least three parts installed on the first surface 101, the second surface 102, and the side surface 103, respectively.
Here, the substrate mounting part 10 is a quartz substrate, a glass substrate, a wafer, a sapphire substrate, a hard/soft mixed plate, or another hard substrate.
The substrate mounting section 10 is a flexible substrate or a thin film, and its material includes polycarbonate (PC), polyimide (PI), polypropylene (PP), polyethylene terephthalate (PET), or other plastic materials. is not limited to these.

Moreover, in one embodiment, as shown in FIG. It further includes:
Here, the term "joining" refers to electrically connecting two members, or electrically connecting two members via another member.
Moreover, although the drive unit 11 is an integrated circuit here, the present invention is not limited to this.

In this embodiment, there is no particular restriction on the shape of the openings 53, and the conductive bump 7 passes through one of the openings 53, and the first pad 61 passes through the conductive bump 7. Any device may be used as long as it is electrically connected to one of the active element TFTs via the active element TFT.
For example, the openings 53 may have a circular, oval, rectangular, or irregular shape, but the present invention is not limited thereto.
Note that FIG. 3(A) is a schematic diagram showing a portion of an electronic device according to another embodiment of the present invention.
The electronic device of FIG. 3(A) is similar to FIG. 1(A), FIG. 1(B), or FIG. 2 except that the openings 53 are rectangular.

FIG. 3(B) is a schematic diagram showing a portion of an electronic device according to another embodiment of the present invention. The electronic device in FIG. 3(B) is similar to FIG. 3(A) except for the differences described below.
As shown in FIG. 3A, the common electrode 5 of the electronic device has a plurality of openings 53, and each opening 53 is installed to correspond to a light emitting element 6.
Specifically, the first pad 61 of each light emitting element 6 is installed to correspond to each opening 53 of the common electrode 5.

In the electronic device of this embodiment, as shown in FIG. Ru.
Specifically, at least two of the first pads (not shown) of the light emitting elements 6 are installed to correspond to one of the openings 53 of the common electrode 5.
In this embodiment, the first pads of the three light emitting elements 6 are installed so as to correspond to one opening 53 of the common electrode 5.

FIGS. 4A and 4B are schematic diagrams showing parts of an electronic device according to another embodiment of the present invention.
The electronic devices in FIGS. 4(A) and 4(B) are similar to the electronic devices in FIGS. 3(A) and 3(B), but the differences are as follows: The light emitting elements 6 of the electronic device are monochrome light emitting diodes, whereas the light emitting elements 6 used in this embodiment are multicolor light emitting diodes.
However, the present invention is not limited to this. The effects of the present invention can be achieved as long as the pads of the light emitting elements are electrically connected to a common electrode and pressure and heat during bonding are evenly dispersed by the common electrode.
Each light emitting element emits light of a different color, for example, red, blue, green, and white light, but the present invention is not limited thereto.

FIG. 5 is a cross-sectional view showing a portion of an electronic device according to another embodiment of the present invention. The electronic device of FIG. 5 is similar to that of FIG. 2, the difference being that the electronic device further includes a light absorption layer 8 disposed on the common electrode 5.
Specifically, the common electrode 5 includes a first region R1 and a second region R2, the first region R1 overlaps with the light emitting elements 6 in the normal direction of the substrate 1, and the second region R2 overlaps with the light emitting elements 6 in the normal direction of the substrate 1. The light absorption layer 8 is provided in the second region R2 without overlapping the light emitting elements 6 in the normal direction of the substrate 1.
However, the present invention is not limited thereto, and for example, the light absorption layer 8 may be provided on the conductive bump 7 to further strengthen the contrast effect of the light emitting elements and improve display quality.
Alternatively, the light absorption layer 8 may be installed in the first region R1; however, if the light absorption layer 8 is made of an insulating material, it has an opening corresponding to the pad of the light emitting element 6, and the light absorption layer 8 has an opening corresponding to the pad of the light emitting element 6. The electrical connection between the active element TFT and the active element TFT is maintained.
The light absorption layer 8 is a black ink layer, a black resin layer, an adhesive tape, an anti-reflection material, a black metal layer, or a light absorption material, but the present invention is not limited thereto. Any material may be used as long as it can reduce the amount of light and enhance the contrast effect of the light emitting element.

FIG. 6 is a schematic diagram illustrating a partial electronic device according to another embodiment of the present invention. The electronic device of FIG. 6 is similar to that of FIG. 5, the difference being that the light absorption layer 8 is a black metal layer.
Specifically, the black metal layer is installed on the common electrode 5, and the entire surface of the common electrode 5 is covered with the black metal layer, but the present invention is not limited to this. The black metal layer may be provided only in a region that does not overlap with the light emitting element 6 (for example, the second region R2 in FIG. 5), or the black metal layer may be provided on the conductive bump 7.
When the light-absorbing layer 8 is a black metal layer, the light-absorbing layer 8 is not damaged when the light-emitting elements 6 are reprocessed.

In this embodiment, the material of the black metal layer is molybdenum oxide, copper oxide, or a combination thereof, but the present invention is not limited thereto.
Although the thickness of the black metal layer is 100 A or more and 5 μm or less, the present invention is not limited to this.

7(A) to FIG. 7(D) are overhead views showing an electronic device according to one embodiment of the present invention.
FIG. 7(A) is an overhead view of FIG. 3(A).
Moreover, FIG. 7(C) is an overhead view of FIG. 4(A).
Furthermore, FIG. 7(B) is an overhead view of FIG. 6.
The electronic device includes a black metal layer serving as a light absorption layer 8.
When viewed from above, the black metal layer is installed on the common electrode 5 that does not overlap with the light emitting elements 6, reducing the reflection of light from the light emitting elements 6 by the common electrode 5, and enhancing the contrast effect of the light emitting elements 6, Improving display quality.
The electronic device of FIG. 7(D) is similar to that of FIG. 7(B), and the difference is that in this embodiment, the light emitting element 6 is a multicolor light emitting diode, but the present invention is limited to this. isn't it.

FIG. 8 is a cross-sectional view showing a portion of an electronic device according to another embodiment of the present invention. The electronic device of FIG. 8 is similar to those of FIGS. 1 to 6, the difference being that the electronic device further includes a second insulating layer 9 disposed between the common electrode 5 and the conductive bumps 7. The point is to be prepared.
Specifically, the second insulating layer 9 is installed in the openings 53 and in a manner corresponding to the fifth insulating layer 33, and at least a portion of the second insulating layer 9 is in the openings 53. The common electrode 5 or the conductive bump 7 is installed to prevent short circuit between the common electrode 5 and the conductive bump 7.

In other embodiments, the electronic devices shown in FIGS. 1 to 8 described above may include, for example, a junction electronic device, a display device, an antenna device, a sensing (or sensing) device, or a backlight device, etc. The invention is not limited thereto.

Overall, the electronic device of the present invention can evenly distribute the pressure and heat generated during bonding of light emitting devices through the design of the common electrode, thereby avoiding damage to the underlying circuitry and increasing the yield and reliability of the process. .

The electronic device of the present invention can be applied to various display devices, such as liquid-crystal (LC), organic light-emitting diode (OLED), quantum dot (QD), fluorescence ) materials, phosphor materials, light-emitting diodes (LED), micro light-emitting diodes or mini light-emitting diodes, or other display media. However, the present invention is not limited thereto.
In an embodiment of the present invention, the chip size of the light emitting diode (mini LED) is about 300 μm to 10 mm, the chip size of the mini light emitting diode (mini LED) is about 100 μm to 300 μm, and the chip size of the micro light emitting diode (micro LED) is about Although the diameter is 1 μm to 100 μm, the present invention is not limited thereto. In embodiments of the present invention, the display device is, for example, a flexible display, a touch display, a curved display, or a tiled display; Not limited.

The above-described embodiments are merely for explaining the technical idea and features of the present invention, and are intended to enable those familiar with the technical field to understand and implement the present invention. It does not limit the scope of the claims.
It is therefore intended that various similar improvements or changes made without departing from the spirit of the invention be covered by the following claims.

1 Substrate 2 Active layer 21 Semiconductor layer 22 Gate insulating layer 23 Gate 24 Third insulating layer 25 First electrode 26 Electrical electrode 3 Insulating layer 31 First insulating layer 311 Through hole 312 Passivation layer 313 Planar layer 32 Fourth insulating layer 33 Fifth insulating layer 331 Second opening 4 Conductive unit 5 Common electrode 51 First common electrode layer (first patterned metal layer)
52 Second common electrode layer (second patterned metal layer)
53 Opening 6 Light emitting element 61 First pad 62 Second pad 7 Conductive bump 71 First metal layer (first patterned metal layer)
72 Second metal layer (second patterned metal layer)
8 Light absorption layer 9 Second insulating layer TFT Active element 10 Substrate mounting part 101 First surface 102 Second surface 103 Side surface 11 Drive unit D1 Distance R1 First region R2 Second region T1 Thickness T2 Thickness

Claims (12)

A substrate and
a plurality of active elements installed on the substrate;
a common electrode installed on these active elements and including a plurality of openings;
a plurality of light emitting elements each including a first pad and a second pad installed on the common electrode and located on the same side;
a conductive bump installed in one of the openings, and an insulating layer installed between the common electrode and the conductive bump,
the common electrode and the conductive bump are separated by a gap;
In a cross section of the common electrode, the conductive bump, and the insulating layer cut along a plane along the vertical direction, a part of the insulating layer is provided within the gap, and a portion of the insulating layer is a portion is provided on the common electrode and the conductive bump, and a portion of the insulating layer and another portion of the insulating layer are connected,
The first pad is located so as to correspond to one of the openings and is electrically connected to one of the active elements via the conductive bump, and the second pad is An electronic device, characterized in that the electronic device is electrically connected to the common electrode. The electronic device according to claim 1, wherein a distance between the gap between the conductive bump and the common electrode is 2 μm or more and 100 μm or less. When the insulating layer is a second insulating layer, the first insulating layer further includes a first insulating layer installed between the active element and the common electrode, the first insulating layer including a through hole, and the first insulating layer including the through hole. The electronic device further comprises a conductive unit installed in the through hole, and the conductive bump is electrically connected to one of the active elements via the conductive unit. The electronic device according to claim 1. The electronic device according to claim 1, further comprising a light absorption layer disposed on the common electrode. 5. The electronic device according to claim 4, wherein the light absorption layer includes a black metal layer as a material. 5. The electronic device according to claim 4, wherein the light absorption layer includes a black resin layer as a material. The electronic device according to claim 1, wherein the first pad of each light emitting element is installed to correspond to each opening of the common electrode. The electronic device according to claim 1, wherein the first pads of at least two of the light emitting elements are disposed to correspond to one of the openings of the common electrode. The electronic device according to claim 1, wherein the common electrode has a thickness of 0.02 μm or more and 100 μm or less. 2. Electronic device according to claim 1, characterized in that at least one of said light emitting elements comprises a multicolor light emitting diode. 2. Electronic device according to claim 1, characterized in that at least one of said active elements comprises a thin film transistor. The substrate further includes a substrate mounting section including two surfaces, a first surface and a second surface that correspond to each other, and a side surface connected to the first surface and the second surface, and the substrate has the first surface, The electronic device according to claim 1, comprising at least three parts installed on the second surface and the side surface, respectively.

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