JP7394105B2 - 液供給ユニット及び液供給方法 - Google Patents
液供給ユニット及び液供給方法 Download PDFInfo
- Publication number
- JP7394105B2 JP7394105B2 JP2021207344A JP2021207344A JP7394105B2 JP 7394105 B2 JP7394105 B2 JP 7394105B2 JP 2021207344 A JP2021207344 A JP 2021207344A JP 2021207344 A JP2021207344 A JP 2021207344A JP 7394105 B2 JP7394105 B2 JP 7394105B2
- Authority
- JP
- Japan
- Prior art keywords
- liquid
- tank
- pressure
- internal space
- line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000007788 liquid Substances 0.000 title claims description 315
- 238000000034 method Methods 0.000 title claims description 99
- 238000009835 boiling Methods 0.000 claims description 21
- 238000011144 upstream manufacturing Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 description 61
- 239000007789 gas Substances 0.000 description 36
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 33
- 238000011084 recovery Methods 0.000 description 33
- 239000000126 substance Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000000356 contaminant Substances 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- -1 etc. Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004148 unit process Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
- B08B3/022—Cleaning travelling work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
- B08B2203/007—Heating the liquid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
- B08B2203/02—Details of machines or methods for cleaning by the force of jets or sprays
- B08B2203/027—Pump details
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
Description
4110 液供給源
4120 第1タンク
4130 第2タンク
4135、4136 インレットライン
4129、4139 ガス供給ライン
4112、4114 排気ライン
4150 アウトレットライン
4160 循環ライン
4170 回収ライン
41651、41701 圧力センサー
4171、4172 回収ライン
4166、4173 圧力提供部材
4174、4175 ヒーター
41741、 温度センサー
4167、4177 ポンプ
4181、4182 ドレーンライン
4190 供給ライン
5000 被処理体
Claims (19)
- 液を供給する液供給ユニットにおいて、
液を貯蔵する内部空間を有するタンクと、
液供給源から前記内部空間に前記液を供給し、インレットバルブが設置されるインレットラインと、
前記タンクからノズルに前記液を供給するか、又は前記タンクに前記液を回収し、アウトレットバルブが設置されるアウトレットラインと、
前記内部空間にガスを供給し、ガス調節バルブが設置されるガス供給ラインと、
前記内部空間を排気し、排気バルブが設置される排気ラインと、
前記内部空間に貯蔵された液を循環させる循環ラインと、
制御器と、を含み、
前記制御器は、
前記内部空間に前記液が供給される間に前記循環ラインが加圧されるようにする液供給ユニット。 - 前記制御器は、
前記内部空間に前記液が供給される間に前記内部空間が加圧されるように前記ガス調節バルブと前記排気バルブを制御する請求項1に記載の液供給ユニット。 - 前記制御器は、
前記内部空間に前記液が供給される間に、
前記内部空間に前記ガスを供給し、前記排気バルブは、閉鎖されるように前記ガス調節バルブと前記排気バルブを制御する請求項2に記載の液供給ユニット。 - 前記循環ラインには、
第1ポンプと、
前記循環ライン内の液を加熱する第1ヒーターと、
前記第1ヒーターの後段に提供された圧力提供部材と、をさらに含み、
前記圧力提供部材を通過するための前記液の圧力は、前記第1ヒーターを通過するための前記液の圧力より大きく提供される請求項1に記載の液供給ユニット。 - 前記圧力提供部材は、第1レギュレータで提供され、
前記循環ラインは、
前記第1レギュレータの前段に設置されて前記循環ライン内の前記液の圧力を測定する第1圧力センサーが設置され、
前記第1レギュレータは、
前記循環ライン内で前記液の圧力が既設定された圧力以上である場合、開放されて前記液の流れを許容する請求項4に記載の液供給ユニット。 - 前記第1ヒーターには前記第1ヒーターと前記液の接触面温度を測定する第1温度センサーが設置され、
前記第1温度センサーが測定した前記第1ヒーターと前記液の接触面温度が、
前記既設定された圧力に応じる前記液の沸点を超過しないように前記第1ヒーターを制御する請求項5に記載の液供給ユニット。 - 前記制御器は、
前記循環ライン内で前記液の圧力が既設定された圧力以上である場合、前記内部空間を排気するように前記排気バルブを制御する請求項5に記載の液供給ユニット。 - 前記アウトレットラインには、
第2ポンプと、
前記アウトレットライン内の液を加熱する第2ヒーターと、
前記アウトレットライン内で前段の圧力が既設定された圧力以上である場合、開放されて前記液の流れを許容する第2レギュレータと、
前記第2レギュレータの前段に設置されて前記アウトレットライン内の前記液の圧力を測定する第2圧力センサーと、が設置される請求項1に記載の液供給ユニット。 - 前記第2ヒーターと前記第2レギュレータとの間で前記アウトレットラインから分岐され、前記ノズルと連結される供給ラインをさらに含む請求項8に記載の液供給ユニット。
- 前記第2ヒーターには前記第2ヒーターと前記液の接触面温度を測定する第2温度センサーが設置され、
前記制御器は、
前記第2温度センサーが測定した前記第2ヒーターと前記液の接触面温度が、
既設定された圧力に応じる前記液の沸点を超過しないように前記第2ヒーターを制御する請求項8に記載の液供給ユニット。 - 前記タンクは、
第1タンクと第2タンクを含み、
前記循環ラインは、前記第1タンクそして前記第2タンクに連結され、
前記制御器は、
前記第2タンクから前記アウトレットラインを通じて前記ノズルに前記液を供給する間に、
前記インレットラインを通じて前記第1タンク内に前記液を供給し、前記第1タンクの前記内部空間の前記液が前記循環ラインを通じて循環されるように制御する請求項1乃至請求項10のいずれかの一項に記載の液供給ユニット。 - 液を供給する方法において、
第1タンク又は第2タンクの中でいずれか1つのタンクの内部空間に貯蔵された前記液をノズルユニットに供給する間に他の1つのタンクの内部空間に液を補充しながら、前記他の1つのタンクの内部空間の液を循環させる循環ラインを加圧し、
前記他の1つのタンクの内部空間に前記液が供給される間に、
前記他の1つのタンクの内部空間にガスを供給し、前記他の1つのタンクの内部空間の排気が行われないようにする
液供給方法。 - 液を供給する方法において、
第1タンク又は第2タンクの中でいずれか1つのタンクの内部空間に貯蔵された前記液をノズルユニットに供給する間に他の1つのタンクの内部空間に液を補充しながら、前記他の1つのタンクの内部空間の液を循環させる循環ラインを加圧し、
前記循環ラインは、
前記循環ライン内液を加熱するヒーターと、
前記ヒーターの後段に提供された圧力提供部材と、が提供され、
前記圧力提供部材を通過するための前記液の圧力は、前記ヒーターを通過するための前記液の圧力より大きく提供される液供給方法。 - 前記循環ライン内の圧力が既設定された圧力以上になった場合、前記内部空間を排気する請求項13に記載の液供給方法。
- 前記ヒーターと前記液の接触面の温度は、
前記既設定された圧力に応じる前記液の沸点を超過しないように提供される請求項14に記載の液供給方法。 - 請求項11の液供給ユニットを利用して液を供給する方法において、
前記第2タンクの前記内部空間から前記ノズルに前記液を供給する間に前記第1タンクの前記内部空間に前記液を供給して前記第1タンクの液供給を準備し、
前記液供給が遂行される間に前記第1タンク内の液は循環ラインを通じて循環され、前記循環ラインが加圧される液供給方法。 - 前記第1タンクの内部空間に前記液が供給される間に、
前記第1タンクの内部空間に前記ガスを供給し、前記第1タンクの内部空間の排気が行われないようにする請求項16に記載の液供給方法。 - 前記循環ライン内の前記液の圧力が既設定された圧力以上になった場合、前記循環ライン内で液の流れを許容する請求項16に記載の液供給方法。
- 前記循環ラインにはヒーターが提供され、
前記ヒーターと前記液の接触面の温度は、
既設定された圧力に応じる前記液の沸点を超過しないように提供される請求項18に記載の液供給方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020200184417A KR102585284B1 (ko) | 2020-12-28 | 2020-12-28 | 액 공급 유닛 및 액 공급 방법 |
KR10-2020-0184417 | 2020-12-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2022104576A JP2022104576A (ja) | 2022-07-08 |
JP7394105B2 true JP7394105B2 (ja) | 2023-12-07 |
Family
ID=82119130
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021207344A Active JP7394105B2 (ja) | 2020-12-28 | 2021-12-21 | 液供給ユニット及び液供給方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11887870B2 (ja) |
JP (1) | JP7394105B2 (ja) |
KR (1) | KR102585284B1 (ja) |
CN (1) | CN114695189A (ja) |
TW (1) | TWI810753B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102622445B1 (ko) * | 2020-04-24 | 2024-01-09 | 세메스 주식회사 | 기판 처리 장치 및 액 공급 방법 |
TWI822339B (zh) * | 2022-09-19 | 2023-11-11 | 英業達股份有限公司 | 液位控制設備 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20140290698A1 (en) | 2013-03-29 | 2014-10-02 | Semes Co., Ltd. | Chemical supplying unit, substrate treatment apparatus, and method of treating substrate using the substrate treatment appparatus |
JP2017028112A (ja) | 2015-07-23 | 2017-02-02 | 株式会社Screenホールディングス | 基板処理装置 |
US20170312794A1 (en) | 2016-04-29 | 2017-11-02 | Semes Co., Ltd. | Apparatus and method for treating a substrate |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3615954B2 (ja) | 1999-01-29 | 2005-02-02 | 大日本スクリーン製造株式会社 | 基板処理装置用の槽内液面検出装置 |
KR20110057679A (ko) * | 2009-11-24 | 2011-06-01 | 세메스 주식회사 | 아이피에이 공급 장치 |
JP5439579B2 (ja) * | 2012-02-27 | 2014-03-12 | 東京エレクトロン株式会社 | 液処理装置及び液処理方法 |
JP5951384B2 (ja) * | 2012-07-20 | 2016-07-13 | 東京エレクトロン株式会社 | 温度制御システムへの温調流体供給方法及び記憶媒体 |
KR102246213B1 (ko) * | 2013-03-15 | 2021-04-28 | 티이엘 매뉴팩처링 앤드 엔지니어링 오브 아메리카, 인크. | 고온 에칭액을 제공하는 처리 시스템 및 방법 |
KR101491055B1 (ko) | 2013-03-29 | 2015-02-11 | 세메스 주식회사 | 액 공급 유닛, 기판 처리 장치, 그리고 기판 처리 장치를 이용한 기판 처리 방법 |
KR102152909B1 (ko) * | 2013-12-31 | 2020-09-07 | 세메스 주식회사 | 기판처리방법 |
JP6385714B2 (ja) * | 2014-05-16 | 2018-09-05 | 東京エレクトロン株式会社 | 基板液処理装置、基板液処理装置の洗浄方法及び記憶媒体 |
KR102343633B1 (ko) * | 2014-12-30 | 2021-12-29 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
KR102357358B1 (ko) * | 2014-12-30 | 2022-02-04 | 세메스 주식회사 | 액 공급 유닛, 기판 처리 장치, 기판 처리 방법 |
KR102343635B1 (ko) * | 2014-12-30 | 2021-12-29 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
JP6246749B2 (ja) | 2015-01-28 | 2017-12-13 | 東京エレクトロン株式会社 | ウエットエッチング方法、基板液処理装置および記憶媒体 |
KR101681190B1 (ko) * | 2015-05-15 | 2016-12-02 | 세메스 주식회사 | 기판 건조 장치 및 방법 |
KR20180059650A (ko) * | 2016-11-25 | 2018-06-05 | 삼성전자주식회사 | 세정 조성물, 세정 장치, 및 그를 이용한 반도체 소자의 제조 방법 |
JP6817860B2 (ja) * | 2017-03-21 | 2021-01-20 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
KR102158232B1 (ko) | 2017-06-30 | 2020-09-21 | 주식회사 케이씨텍 | 기판 처리 장치 및 기판 처리 방법 |
JP6983008B2 (ja) * | 2017-08-28 | 2021-12-17 | 東京エレクトロン株式会社 | 液処理装置および液処理方法 |
JP7040849B2 (ja) * | 2017-09-15 | 2022-03-23 | 株式会社Screenホールディングス | 基板処理装置、基板処理方法及び基板処理装置の制御方法 |
KR20190089801A (ko) | 2019-07-19 | 2019-07-31 | 세메스 주식회사 | 세정액 공급 유닛, 이를 포함하는 기판 처리 장치 및 세정액 공급 방법 |
KR102319966B1 (ko) * | 2019-12-31 | 2021-11-02 | 세메스 주식회사 | 액 공급 유닛, 기판 처리 장치, 그리고 기판 처리 장치를 이용한 기판 처리 방법 |
-
2020
- 2020-12-28 KR KR1020200184417A patent/KR102585284B1/ko active IP Right Grant
-
2021
- 2021-12-21 TW TW110148016A patent/TWI810753B/zh active
- 2021-12-21 JP JP2021207344A patent/JP7394105B2/ja active Active
- 2021-12-27 US US17/563,002 patent/US11887870B2/en active Active
- 2021-12-27 CN CN202111612794.3A patent/CN114695189A/zh active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20140290698A1 (en) | 2013-03-29 | 2014-10-02 | Semes Co., Ltd. | Chemical supplying unit, substrate treatment apparatus, and method of treating substrate using the substrate treatment appparatus |
JP2017028112A (ja) | 2015-07-23 | 2017-02-02 | 株式会社Screenホールディングス | 基板処理装置 |
US20170312794A1 (en) | 2016-04-29 | 2017-11-02 | Semes Co., Ltd. | Apparatus and method for treating a substrate |
Also Published As
Publication number | Publication date |
---|---|
CN114695189A (zh) | 2022-07-01 |
KR102585284B1 (ko) | 2023-10-05 |
TW202224780A (zh) | 2022-07-01 |
TWI810753B (zh) | 2023-08-01 |
US20220208568A1 (en) | 2022-06-30 |
US11887870B2 (en) | 2024-01-30 |
JP2022104576A (ja) | 2022-07-08 |
KR20220093570A (ko) | 2022-07-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7394105B2 (ja) | 液供給ユニット及び液供給方法 | |
JP7244568B2 (ja) | 基板処理装置及び液供給方法 | |
KR102319966B1 (ko) | 액 공급 유닛, 기판 처리 장치, 그리고 기판 처리 장치를 이용한 기판 처리 방법 | |
US20200406311A1 (en) | Apparatus and method for treating a substrate | |
JP7287930B2 (ja) | 基板処理装置及び方法 | |
JP7290607B2 (ja) | 液供給ユニット、そしてこれを有する基板処理装置及び方法 | |
US11621159B2 (en) | Method for treating substrate | |
KR101491055B1 (ko) | 액 공급 유닛, 기판 처리 장치, 그리고 기판 처리 장치를 이용한 기판 처리 방법 | |
KR102098599B1 (ko) | 약액공급유닛 | |
US20140290698A1 (en) | Chemical supplying unit, substrate treatment apparatus, and method of treating substrate using the substrate treatment appparatus | |
CN112289702A (zh) | 基板处理设备 | |
KR20130052997A (ko) | 버퍼 | |
KR102075675B1 (ko) | 유체 공급 유닛 및 이를 가지는 기판 처리 장치 | |
KR102232835B1 (ko) | 기판 처리 장치 및 기판 처리 방법 | |
JP7264858B2 (ja) | 基板処理装置及び処理液供給方法 | |
KR102666204B1 (ko) | 기판 처리 장치 및 기판 처리 방법 | |
KR20220089827A (ko) | 기판 처리 장치 및 기판 처리 방법 | |
KR101885563B1 (ko) | 기판 처리 장치 및 기판 처리 방법 | |
KR20220150605A (ko) | 액 공급 유닛과 이를 포함하는 기판 처리 장치 및 이를 이용한 액 공급 방법 | |
JP2023062681A (ja) | 液供給ユニット、これを有する基板処理装置、及び基板処理方法 | |
KR20230022354A (ko) | 파티클 안정화 방법 | |
KR20140017753A (ko) | 기판 세정 장치 및 기판 세정 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20211221 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230110 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230407 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20230425 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230824 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20231012 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20231031 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20231127 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7394105 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |