JP7384153B2 - ナノインプリント用テンプレート及びその製造方法、並びに、２段メサブランクス及びその製造方法 - Google Patents
ナノインプリント用テンプレート及びその製造方法、並びに、２段メサブランクス及びその製造方法 Download PDFInfo
- Publication number
- JP7384153B2 JP7384153B2 JP2020513257A JP2020513257A JP7384153B2 JP 7384153 B2 JP7384153 B2 JP 7384153B2 JP 2020513257 A JP2020513257 A JP 2020513257A JP 2020513257 A JP2020513257 A JP 2020513257A JP 7384153 B2 JP7384153 B2 JP 7384153B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- main surface
- resin layer
- tantalum oxide
- template
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 80
- 239000010408 film Substances 0.000 claims description 664
- 229920005989 resin Polymers 0.000 claims description 189
- 239000011347 resin Substances 0.000 claims description 189
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 161
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 161
- 230000001681 protective effect Effects 0.000 claims description 119
- 238000012546 transfer Methods 0.000 claims description 98
- 238000000034 method Methods 0.000 claims description 95
- 239000000463 material Substances 0.000 claims description 87
- 238000005530 etching Methods 0.000 claims description 86
- 239000010409 thin film Substances 0.000 claims description 41
- 238000002360 preparation method Methods 0.000 claims description 10
- 239000010410 layer Substances 0.000 description 166
- 239000002585 base Substances 0.000 description 137
- 239000007789 gas Substances 0.000 description 31
- 238000001312 dry etching Methods 0.000 description 29
- 238000004140 cleaning Methods 0.000 description 27
- 230000008034 disappearance Effects 0.000 description 27
- 238000004380 ashing Methods 0.000 description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 21
- 239000001301 oxygen Substances 0.000 description 21
- 229910052760 oxygen Inorganic materials 0.000 description 21
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 20
- 238000011156 evaluation Methods 0.000 description 20
- 230000000052 comparative effect Effects 0.000 description 18
- 239000011651 chromium Substances 0.000 description 17
- 230000003287 optical effect Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 238000012545 processing Methods 0.000 description 11
- 238000001127 nanoimprint lithography Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 239000002253 acid Substances 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 239000003513 alkali Substances 0.000 description 6
- 238000007654 immersion Methods 0.000 description 6
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 238000007733 ion plating Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910003070 TaOx Inorganic materials 0.000 description 2
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 2
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 2
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 241000255925 Diptera Species 0.000 description 1
- 241000287462 Phalacrocorax carbo Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- SJKRCWUQJZIWQB-UHFFFAOYSA-N azane;chromium Chemical compound N.[Cr] SJKRCWUQJZIWQB-UHFFFAOYSA-N 0.000 description 1
- 235000013361 beverage Nutrition 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- UFGZSIPAQKLCGR-UHFFFAOYSA-N chromium carbide Chemical compound [Cr]#C[Cr]C#[Cr] UFGZSIPAQKLCGR-UHFFFAOYSA-N 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000010436 fluorite Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910003470 tongbaite Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/38—Moulds or cores; Details thereof or accessories therefor characterised by the material or the manufacturing process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018074947 | 2018-04-09 | ||
| JP2018074947 | 2018-04-09 | ||
| PCT/JP2019/015332 WO2019198668A1 (ja) | 2018-04-09 | 2019-04-08 | ナノインプリント用テンプレート及びその製造方法、並びに、２段メサブランクス及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2019198668A1 JPWO2019198668A1 (ja) | 2021-04-22 |
| JP7384153B2 true JP7384153B2 (ja) | 2023-11-21 |
Family
ID=68164216
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020513257A Active JP7384153B2 (ja) | 2018-04-09 | 2019-04-08 | ナノインプリント用テンプレート及びその製造方法、並びに、２段メサブランクス及びその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP7384153B2 (zh) |
| TW (2) | TWI766156B (zh) |
| WO (1) | WO2019198668A1 (zh) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009200505A (ja) | 2005-09-06 | 2009-09-03 | Canon Inc | モールド、インプリント方法、及びチップの製造方法 |
| JP2015012034A (ja) | 2013-06-26 | 2015-01-19 | キヤノン株式会社 | モールド |
| JP2015065443A (ja) | 2009-08-17 | 2015-04-09 | Jsr株式会社 | パターン形成方法 |
| JP2017022417A (ja) | 2016-10-21 | 2017-01-26 | 大日本印刷株式会社 | テンプレートの製造方法 |
| WO2017057263A1 (ja) | 2015-09-29 | 2017-04-06 | 大日本印刷株式会社 | 配線構造体およびその製造方法、半導体装置、多層配線構造体およびその製造方法、半導体素子搭載用基板、パターン構造体の形成方法、インプリント用のモールドおよびその製造方法、インプリントモールドセット、ならびに多層配線基板の製造方法 |
| JP2018056545A (ja) | 2016-05-25 | 2018-04-05 | 大日本印刷株式会社 | テンプレート及びテンプレートブランクス、並びにインプリント用テンプレート基板の製造方法、インプリント用テンプレートの製造方法、及び、テンプレート |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5182470B2 (ja) * | 2007-07-17 | 2013-04-17 | 大日本印刷株式会社 | インプリントモールド |
| NL2004945A (en) * | 2009-08-14 | 2011-02-15 | Asml Netherlands Bv | Imprint lithography apparatus and method. |
| NL2005265A (en) * | 2009-10-07 | 2011-04-11 | Asml Netherlands Bv | Imprint lithography apparatus and method. |
| US8486319B2 (en) * | 2010-05-24 | 2013-07-16 | Integran Technologies Inc. | Articles with super-hydrophobic and/or self-cleaning surfaces and method of making same |
| JP2014011254A (ja) * | 2012-06-28 | 2014-01-20 | Dainippon Printing Co Ltd | 位置合わせマーク、該マークを備えたテンプレート、および、該テンプレートの製造方法 |
| JP6965557B2 (ja) * | 2016-04-28 | 2021-11-10 | 大日本印刷株式会社 | インプリント用テンプレート及びインプリント用テンプレートの製造方法 |
-
2019
- 2019-04-08 JP JP2020513257A patent/JP7384153B2/ja active Active
- 2019-04-08 WO PCT/JP2019/015332 patent/WO2019198668A1/ja active Application Filing
- 2019-04-08 TW TW108112100A patent/TWI766156B/zh active
- 2019-04-08 TW TW109131067A patent/TWI754374B/zh active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009200505A (ja) | 2005-09-06 | 2009-09-03 | Canon Inc | モールド、インプリント方法、及びチップの製造方法 |
| JP2015065443A (ja) | 2009-08-17 | 2015-04-09 | Jsr株式会社 | パターン形成方法 |
| JP2015012034A (ja) | 2013-06-26 | 2015-01-19 | キヤノン株式会社 | モールド |
| WO2017057263A1 (ja) | 2015-09-29 | 2017-04-06 | 大日本印刷株式会社 | 配線構造体およびその製造方法、半導体装置、多層配線構造体およびその製造方法、半導体素子搭載用基板、パターン構造体の形成方法、インプリント用のモールドおよびその製造方法、インプリントモールドセット、ならびに多層配線基板の製造方法 |
| JP2018056545A (ja) | 2016-05-25 | 2018-04-05 | 大日本印刷株式会社 | テンプレート及びテンプレートブランクス、並びにインプリント用テンプレート基板の製造方法、インプリント用テンプレートの製造方法、及び、テンプレート |
| JP2017022417A (ja) | 2016-10-21 | 2017-01-26 | 大日本印刷株式会社 | テンプレートの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2019198668A1 (ja) | 2021-04-22 |
| TW201943529A (zh) | 2019-11-16 |
| TWI766156B (zh) | 2022-06-01 |
| WO2019198668A1 (ja) | 2019-10-17 |
| TW202116524A (zh) | 2021-05-01 |
| TWI754374B (zh) | 2022-02-01 |
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