JP7382329B2 - 基板支持体のためのプロセスキット - Google Patents

基板支持体のためのプロセスキット Download PDF

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Publication number
JP7382329B2
JP7382329B2 JP2020539696A JP2020539696A JP7382329B2 JP 7382329 B2 JP7382329 B2 JP 7382329B2 JP 2020539696 A JP2020539696 A JP 2020539696A JP 2020539696 A JP2020539696 A JP 2020539696A JP 7382329 B2 JP7382329 B2 JP 7382329B2
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JP
Japan
Prior art keywords
edge ring
substrate support
upper edge
lower edge
substrate
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JP2020539696A
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English (en)
Japanese (ja)
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JP2021511663A5 (https=
JPWO2019143858A5 (https=
JP2021511663A (ja
Inventor
ムハンナド ムスタファ
ムハンマド エム ラシード
ユー レイ
アヴゲリノス ヴイ ゲラトス
ヴィカシュ バンシア
ヴィクター エイチ カルデロン
シー ウェイ トー
ユン－シン リー
アニンディタ セン
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2021511663A5 publication Critical patent/JP2021511663A5/ja
Publication of JPWO2019143858A5 publication Critical patent/JPWO2019143858A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7606—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3344—Problems associated with etching isotropy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2020539696A 2018-01-19 2019-01-17 基板支持体のためのプロセスキット Active JP7382329B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862619473P 2018-01-19 2018-01-19
US62/619,473 2018-01-19
US16/249,716 2019-01-16
US16/249,716 US11387134B2 (en) 2018-01-19 2019-01-16 Process kit for a substrate support
PCT/US2019/014076 WO2019143858A1 (en) 2018-01-19 2019-01-17 Process kit for a substrate support

Publications (4)

Publication Number Publication Date
JP2021511663A JP2021511663A (ja) 2021-05-06
JP2021511663A5 JP2021511663A5 (https=) 2022-01-26
JPWO2019143858A5 JPWO2019143858A5 (https=) 2022-01-26
JP7382329B2 true JP7382329B2 (ja) 2023-11-16

Family

ID=67300133

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020539696A Active JP7382329B2 (ja) 2018-01-19 2019-01-17 基板支持体のためのプロセスキット

Country Status (6)

Country Link
US (3) US11387134B2 (https=)
JP (1) JP7382329B2 (https=)
KR (1) KR102711327B1 (https=)
CN (1) CN111587481B (https=)
TW (1) TWI840341B (https=)
WO (1) WO2019143858A1 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
CN118380372A (zh) 2017-11-21 2024-07-23 朗姆研究公司 底部边缘环和中部边缘环
CN118398464A (zh) 2018-08-13 2024-07-26 朗姆研究公司 可更换和/或可折叠的用于等离子鞘调整的并入边缘环定位和定心功能的边缘环组件
CN118431063A (zh) * 2019-08-05 2024-08-02 朗姆研究公司 用于衬底处理系统的边缘环系统
KR102077975B1 (ko) * 2019-10-15 2020-02-14 주식회사 기가레인 플라즈마 처리 수직도가 향상된 플라즈마 처리 장치
KR102905595B1 (ko) 2020-03-23 2025-12-29 램 리써치 코포레이션 기판 프로세싱 시스템들에서의 중간-링 부식 보상
US11380575B2 (en) * 2020-07-27 2022-07-05 Applied Materials, Inc. Film thickness uniformity improvement using edge ring and bias electrode geometry
WO2022076227A1 (en) 2020-10-05 2022-04-14 Lam Research Corporation Moveable edge rings for plasma processing systems
US20220108908A1 (en) * 2020-10-06 2022-04-07 Applied Materials, Inc. Shadow ring kit for plasma etch wafer singulation process
CN120565385A (zh) 2021-09-08 2025-08-29 北京屹唐半导体科技股份有限公司 用于清洁等离子体加工设备的聚焦环的导电构件
CN217387074U (zh) * 2021-12-03 2022-09-06 朗姆研究公司 用于衬底处理系统中增强屏蔽的宽覆盖边缘环
CN120418925A (zh) * 2022-12-20 2025-08-01 朗姆研究公司 用于控制衬底凹口附近的等离子体沉积或蚀刻的下等离子体排除区域环
JP2024090654A (ja) * 2022-12-23 2024-07-04 住友大阪セメント株式会社 静電チャック部材及び静電チャック装置
JP7529008B2 (ja) * 2022-12-23 2024-08-06 住友大阪セメント株式会社 静電チャック部材及び静電チャック装置
US12412769B2 (en) 2023-05-16 2025-09-09 Applied Materials, Inc. Electrostatic chucks with hybrid pucks to improve thermal performance and leakage current stability

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002246370A (ja) 2001-02-15 2002-08-30 Tokyo Electron Ltd フォーカスリング及びプラズマ処理装置
JP2007300057A (ja) 2006-04-27 2007-11-15 Applied Materials Inc 二重温度帯を有する静電チャックをもつ基板支持体
JP2011108764A (ja) 2009-11-16 2011-06-02 Hitachi High-Technologies Corp プラズマ処理装置
US20150179412A1 (en) 2013-12-20 2015-06-25 Lam Research Corporation Edge ring dimensioned to extend lifetime of elastomer seal in a plasma processing chamber
JP3209624U (ja) 2016-01-22 2017-03-30 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 容量結合型プラズマ処理装置のエッジリングのｒｆ振幅の制御

Family Cites Families (85)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5437757A (en) 1994-01-21 1995-08-01 Applied Materials, Inc. Clamp ring for domed pedestal in wafer processing chamber
JP3225850B2 (ja) * 1995-09-20 2001-11-05 株式会社日立製作所 静電吸着電極およびその製作方法
KR100292410B1 (ko) 1998-09-23 2001-06-01 윤종용 불순물 오염이 억제된 반도체 제조용 반응 챔버
US6159299A (en) * 1999-02-09 2000-12-12 Applied Materials, Inc. Wafer pedestal with a purge ring
US6390908B1 (en) * 1999-07-01 2002-05-21 Applied Materials, Inc. Determining when to replace a retaining ring used in substrate polishing operations
US6586343B1 (en) * 1999-07-09 2003-07-01 Applied Materials, Inc. Method and apparatus for directing constituents through a processing chamber
US6375748B1 (en) 1999-09-01 2002-04-23 Applied Materials, Inc. Method and apparatus for preventing edge deposition
JP4592916B2 (ja) 2000-04-25 2010-12-08 東京エレクトロン株式会社 被処理体の載置装置
US6475336B1 (en) 2000-10-06 2002-11-05 Lam Research Corporation Electrostatically clamped edge ring for plasma processing
US6391787B1 (en) 2000-10-13 2002-05-21 Lam Research Corporation Stepped upper electrode for plasma processing uniformity
USD515675S1 (en) * 2001-12-27 2006-02-21 Flow International Corporation Element for a superpressure static fluid seal
US20040027781A1 (en) 2002-08-12 2004-02-12 Hiroji Hanawa Low loss RF bias electrode for a plasma reactor with enhanced wafer edge RF coupling and highly efficient wafer cooling
DE10247179A1 (de) * 2002-10-02 2004-04-15 Ensinger Kunststofftechnologie Gbr Haltering zum Halten von Halbleiterwafern in einer chemisch-mechanischen Poliervorrichtung
DE10247180A1 (de) * 2002-10-02 2004-04-15 Ensinger Kunststofftechnologie Gbr Haltering zum Halten von Halbleiterwafern in einer chemisch-mechanischen Poliervorrichtung
US6964597B2 (en) * 2003-06-27 2005-11-15 Khuu's Inc. Retaining ring with trigger for chemical mechanical polishing apparatus
US7244336B2 (en) 2003-12-17 2007-07-17 Lam Research Corporation Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
US20050133184A1 (en) 2003-12-22 2005-06-23 Weyerhaeuser Company Paper products and method of making
US20070032081A1 (en) * 2005-08-08 2007-02-08 Jeremy Chang Edge ring assembly with dielectric spacer ring
KR20070031660A (ko) * 2005-09-15 2007-03-20 삼성전자주식회사 개선된 체결수단을 구비한 반도체 제조장치
USD573236S1 (en) * 2005-11-28 2008-07-15 Pentair Water India Private Limited Retaining ring
US8226769B2 (en) * 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
US9275887B2 (en) * 2006-07-20 2016-03-01 Applied Materials, Inc. Substrate processing with rapid temperature gradient control
US8398778B2 (en) 2007-01-26 2013-03-19 Lam Research Corporation Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter
US8900405B2 (en) * 2007-11-14 2014-12-02 Applied Materials, Inc. Plasma immersion ion implantation reactor with extended cathode process ring
JP5281811B2 (ja) 2008-03-13 2013-09-04 東京エレクトロン株式会社 プラズマ処理用環状部品、プラズマ処理装置、及び外側環状部材
US8734664B2 (en) 2008-07-23 2014-05-27 Applied Materials, Inc. Method of differential counter electrode tuning in an RF plasma reactor
JP2010045200A (ja) 2008-08-13 2010-02-25 Tokyo Electron Ltd フォーカスリング、プラズマ処理装置及びプラズマ処理方法
KR101624123B1 (ko) * 2008-10-31 2016-05-25 램 리써치 코포레이션 플라즈마 프로세싱 챔버의 하부 전극 어셈블리
USD633991S1 (en) * 2008-11-26 2011-03-08 Nippon Valqua Industries, Ltd. Gate valve seal
USD655401S1 (en) 2009-08-10 2012-03-06 Nippon Valqua Industries, Ltd. Hybrid seal member
US8270141B2 (en) 2009-11-20 2012-09-18 Applied Materials, Inc. Electrostatic chuck with reduced arcing
US8740206B2 (en) * 2010-01-27 2014-06-03 Applied Materials, Inc. Life enhancement of ring assembly in semiconductor manufacturing chambers
USD655797S1 (en) 2010-03-24 2012-03-13 Nippon Valqua Industries, Ltd. Hybrid seal member
USD638523S1 (en) 2010-07-20 2011-05-24 Wärtsilä Japan Ltd. Seal ring for stern tube
USD638522S1 (en) * 2010-07-20 2011-05-24 Wārtsilā Japan Ltd. Seal ring for stern tube
US8988848B2 (en) * 2011-12-15 2015-03-24 Applied Materials, Inc. Extended and independent RF powered cathode substrate for extreme edge tunability
US9412579B2 (en) 2012-04-26 2016-08-09 Applied Materials, Inc. Methods and apparatus for controlling substrate uniformity
US9997381B2 (en) * 2013-02-18 2018-06-12 Lam Research Corporation Hybrid edge ring for plasma wafer processing
US9449797B2 (en) * 2013-05-07 2016-09-20 Lam Research Corporation Component of a plasma processing apparatus having a protective in situ formed layer on a plasma exposed surface
US20150001180A1 (en) * 2013-06-28 2015-01-01 Applied Materials, Inc. Process kit for edge critical dimension uniformity control
US10017857B2 (en) 2015-05-02 2018-07-10 Applied Materials, Inc. Method and apparatus for controlling plasma near the edge of a substrate
JP1546800S (https=) * 2015-06-12 2016-03-28
JP1545406S (https=) 2015-06-16 2016-03-14
JP1545407S (https=) 2015-06-16 2016-03-14
US10163610B2 (en) * 2015-07-13 2018-12-25 Lam Research Corporation Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation
US10854492B2 (en) * 2015-08-18 2020-12-01 Lam Research Corporation Edge ring assembly for improving feature profile tilting at extreme edge of wafer
USD810705S1 (en) 2016-04-01 2018-02-20 Veeco Instruments Inc. Self-centering wafer carrier for chemical vapor deposition
JP3210105U (ja) 2016-03-04 2017-04-27 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ユニバーサルプロセスキット
US10312121B2 (en) * 2016-03-29 2019-06-04 Lam Research Corporation Systems and methods for aligning measurement device in substrate processing systems
USD797691S1 (en) * 2016-04-14 2017-09-19 Applied Materials, Inc. Composite edge ring
USD846095S1 (en) 2017-07-12 2019-04-16 Mcwane, Inc. Restrained gasket
USD818089S1 (en) 2016-09-14 2018-05-15 Nippon Valqua Industries, Ltd. Composite seal
JP1581911S (https=) * 2016-10-25 2017-07-24
JP1584906S (https=) * 2017-01-31 2017-08-28
JP1584241S (https=) * 2017-01-31 2017-08-21
US10199252B2 (en) 2017-06-30 2019-02-05 Taiwan Semiconductor Manufacturing Company, Ltd. Thermal pad for etch rate uniformity
JP1598984S (https=) 2017-07-31 2018-03-05
USD852336S1 (en) * 2017-09-19 2019-06-25 Mcwane, Inc. Restrained gasket
USD846098S1 (en) 2017-09-19 2019-04-16 Mcwane, Inc. Restrained gasket
USD846096S1 (en) 2017-09-19 2019-04-16 Mcwane, Inc. Restrained gasket
USD846097S1 (en) 2017-09-19 2019-04-16 Mcwane, Inc. Restrained gasket
USD852335S1 (en) 2017-09-19 2019-06-25 Mcwane, Inc. Restrained gasket
USD852935S1 (en) * 2017-09-19 2019-07-02 Mcwane, Inc. Restrained gasket
USD895777S1 (en) * 2017-09-20 2020-09-08 Gardner Denver Petroleum Pumps Llc Header ring
USD871561S1 (en) * 2017-11-17 2019-12-31 Valqua, Ltd. Seal member for use in semiconductor production apparatus
JP1612685S (https=) * 2018-02-08 2018-09-03
JP1612684S (https=) 2018-02-08 2018-09-03
JP1638480S (https=) 2018-09-11 2019-08-05
USD909322S1 (en) * 2018-10-12 2021-02-02 Valqua, Ltd. Seal member for use in semiconductor production apparatus
USD909323S1 (en) 2018-10-12 2021-02-02 Valqua, Ltd. Seal member for use in semiconductor production apparatus
JP1646504S (https=) 2018-12-06 2019-11-25
JP1646505S (https=) 2018-12-07 2019-11-25
USD888903S1 (en) 2018-12-17 2020-06-30 Applied Materials, Inc. Deposition ring for physical vapor deposition chamber
USD933725S1 (en) 2019-02-08 2021-10-19 Applied Materials, Inc. Deposition ring for a substrate processing chamber
USD891382S1 (en) 2019-02-08 2020-07-28 Applied Materials, Inc. Process shield for a substrate processing chamber
KR102016376B1 (ko) 2019-03-25 2019-08-30 서보용 반도체 식각장비의 리퍼비시 테스트용 더미 싱글 링
USD931241S1 (en) * 2019-08-28 2021-09-21 Applied Materials, Inc. Lower shield for a substrate processing chamber
USD934315S1 (en) 2020-03-20 2021-10-26 Applied Materials, Inc. Deposition ring for a substrate processing chamber
USD983940S1 (en) 2020-04-09 2023-04-18 Valqua, Ltd. Sealing ring
USD983941S1 (en) 2020-04-10 2023-04-18 Valqua, Ltd. Sealing ring
USD933726S1 (en) * 2020-07-31 2021-10-19 Applied Materials, Inc. Deposition ring for a semiconductor processing chamber
JP1704964S (ja) 2021-04-19 2022-01-14 プラズマ処理装置用サセプタリング
USD986394S1 (en) 2021-05-12 2023-05-16 S & B Technical Products, Inc. Pipe sealing gasket
US11581167B2 (en) 2021-06-18 2023-02-14 Applied Materials, Inc. Process kit having tall deposition ring and smaller diameter electrostatic chuck (ESC) for PVD chamber
USD1049067S1 (en) 2022-04-04 2024-10-29 Applied Materials, Inc. Ring for an anti-rotation process kit for a substrate processing chamber

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002246370A (ja) 2001-02-15 2002-08-30 Tokyo Electron Ltd フォーカスリング及びプラズマ処理装置
JP2007300057A (ja) 2006-04-27 2007-11-15 Applied Materials Inc 二重温度帯を有する静電チャックをもつ基板支持体
JP2011108764A (ja) 2009-11-16 2011-06-02 Hitachi High-Technologies Corp プラズマ処理装置
US20150179412A1 (en) 2013-12-20 2015-06-25 Lam Research Corporation Edge ring dimensioned to extend lifetime of elastomer seal in a plasma processing chamber
JP3209624U (ja) 2016-01-22 2017-03-30 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 容量結合型プラズマ処理装置のエッジリングのｒｆ振幅の制御

Also Published As

Publication number Publication date
USD1115720S1 (en) 2026-03-03
US11387134B2 (en) 2022-07-12
TWI840341B (zh) 2024-05-01
TW201941354A (zh) 2019-10-16
KR20200101993A (ko) 2020-08-28
USD1115719S1 (en) 2026-03-03
WO2019143858A1 (en) 2019-07-25
CN111587481A (zh) 2020-08-25
CN111587481B (zh) 2024-12-06
US20190229007A1 (en) 2019-07-25
KR102711327B1 (ko) 2024-09-26
JP2021511663A (ja) 2021-05-06

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