JP7381214B2 - ブラストユニット付き面取り装置 - Google Patents
ブラストユニット付き面取り装置 Download PDFInfo
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- JP7381214B2 JP7381214B2 JP2019059583A JP2019059583A JP7381214B2 JP 7381214 B2 JP7381214 B2 JP 7381214B2 JP 2019059583 A JP2019059583 A JP 2019059583A JP 2019059583 A JP2019059583 A JP 2019059583A JP 7381214 B2 JP7381214 B2 JP 7381214B2
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- Prior art keywords
- wafer
- angle
- polishing
- slope
- abrasive material
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- 239000003082 abrasive agent Substances 0.000 claims description 60
- 238000002347 injection Methods 0.000 claims description 50
- 239000007924 injection Substances 0.000 claims description 50
- 238000005498 polishing Methods 0.000 claims description 49
- 238000012545 processing Methods 0.000 claims description 47
- 239000000463 material Substances 0.000 claims description 35
- 239000006061 abrasive grain Substances 0.000 claims description 20
- 239000007921 spray Substances 0.000 claims description 14
- 238000005422 blasting Methods 0.000 claims description 5
- 238000007493 shaping process Methods 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 135
- 238000012546 transfer Methods 0.000 description 46
- 238000004140 cleaning Methods 0.000 description 20
- 230000003746 surface roughness Effects 0.000 description 14
- 238000000034 method Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 238000000879 optical micrograph Methods 0.000 description 11
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- 229910003460 diamond Inorganic materials 0.000 description 8
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- 239000004065 semiconductor Substances 0.000 description 8
- 238000011084 recovery Methods 0.000 description 7
- 230000032258 transport Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000007517 polishing process Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000003754 machining Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 108010010803 Gelatin Proteins 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 229920000159 gelatin Polymers 0.000 description 3
- 239000008273 gelatin Substances 0.000 description 3
- 235000019322 gelatine Nutrition 0.000 description 3
- 235000011852 gelatine desserts Nutrition 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 229910020187 CeF3 Inorganic materials 0.000 description 1
- -1 GGG Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 229910001632 barium fluoride Inorganic materials 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007730 finishing process Methods 0.000 description 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Inorganic materials [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- IOLCXVTUBQKXJR-UHFFFAOYSA-M potassium bromide Inorganic materials [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 102000004169 proteins and genes Human genes 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Landscapes
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
ただし、角度θは、図9、11を参照、角度rは、図9、12を参照。
Claims (1)
- ウェーハの端面を面取り加工するブラストユニット付き面取り装置であって、
前記端面の面取り斜面を所定の面取り角度の上斜面及び下斜面となるように研削する加工部と、
弾性母材に研磨用の砥粒を分散させた弾性研磨材を噴射ノズルによって噴射するブラストユニットと、
前記ブラストユニットによって前記弾性研磨材を噴射する際に前記ウェーハを上下から挟む上保持プレート及び下保持プレートと、を備え、
前記ブラストユニットは、前記上斜面及び前記下斜面を研削して成形加工した後、前記上斜面及び前記下斜面へ所定の噴射方向で前記弾性研磨材を噴射し、
前記上保持プレート及び前記下保持プレートは円錐台形とされ、
前記円錐台形の角度は、前記ウェーハの前記面取り角度以下とされ、前記ウェーハの被加工部分と同サイズの底面とされたことを特徴とするブラストユニット付き面取り装置。
Priority Applications (2)
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JP2019059583A JP7381214B2 (ja) | 2019-03-27 | 2019-03-27 | ブラストユニット付き面取り装置 |
JP2023185867A JP2024012429A (ja) | 2019-03-27 | 2023-10-30 | ブラストユニット付き面取り装置及び面取り方法 |
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JP2019059583A JP7381214B2 (ja) | 2019-03-27 | 2019-03-27 | ブラストユニット付き面取り装置 |
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JP2023185867A Division JP2024012429A (ja) | 2019-03-27 | 2023-10-30 | ブラストユニット付き面取り装置及び面取り方法 |
Publications (2)
Publication Number | Publication Date |
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JP2020157426A JP2020157426A (ja) | 2020-10-01 |
JP7381214B2 true JP7381214B2 (ja) | 2023-11-15 |
Family
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JP2019059583A Active JP7381214B2 (ja) | 2019-03-27 | 2019-03-27 | ブラストユニット付き面取り装置 |
JP2023185867A Pending JP2024012429A (ja) | 2019-03-27 | 2023-10-30 | ブラストユニット付き面取り装置及び面取り方法 |
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JP2023185867A Pending JP2024012429A (ja) | 2019-03-27 | 2023-10-30 | ブラストユニット付き面取り装置及び面取り方法 |
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JP7166323B2 (ja) * | 2020-12-21 | 2022-11-07 | Jx金属株式会社 | リン化インジウム基板、リン化インジウム基板の製造方法及び半導体エピタキシャルウエハ |
CN114211405A (zh) * | 2021-12-17 | 2022-03-22 | 富乐德科技发展(天津)有限公司 | 一种去除铝基材表面的氟化物的清洗方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013022684A (ja) | 2011-07-21 | 2013-02-04 | Fuji Seisakusho:Kk | 硬質脆性材料基板の側部研磨方法 |
JP2013052457A (ja) | 2011-09-01 | 2013-03-21 | Fuji Seisakusho:Kk | 板材の端部処理方法及びブラスト加工装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5351591A (en) * | 1976-10-22 | 1978-05-11 | Hitachi Ltd | Method of removing sharpened portions from the peripheral corners of a plate |
JPH01301021A (ja) * | 1988-05-26 | 1989-12-05 | Nec Corp | 光ディスク基板の端面加工方法および装置 |
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2019
- 2019-03-27 JP JP2019059583A patent/JP7381214B2/ja active Active
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2023
- 2023-10-30 JP JP2023185867A patent/JP2024012429A/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013022684A (ja) | 2011-07-21 | 2013-02-04 | Fuji Seisakusho:Kk | 硬質脆性材料基板の側部研磨方法 |
JP2013052457A (ja) | 2011-09-01 | 2013-03-21 | Fuji Seisakusho:Kk | 板材の端部処理方法及びブラスト加工装置 |
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JP2024012429A (ja) | 2024-01-30 |
JP2020157426A (ja) | 2020-10-01 |
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