JP7376667B2 - 担体材料に導電性構造体を製造する方法 - Google Patents
担体材料に導電性構造体を製造する方法 Download PDFInfo
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- JP7376667B2 JP7376667B2 JP2022173332A JP2022173332A JP7376667B2 JP 7376667 B2 JP7376667 B2 JP 7376667B2 JP 2022173332 A JP2022173332 A JP 2022173332A JP 2022173332 A JP2022173332 A JP 2022173332A JP 7376667 B2 JP7376667 B2 JP 7376667B2
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- Prior art keywords
- metal
- conductive
- carrier material
- iron
- acid
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- 238000004519 manufacturing process Methods 0.000 title description 25
- 150000001875 compounds Chemical class 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 33
- 229910001463 metal phosphate Inorganic materials 0.000 claims description 31
- 239000003381 stabilizer Substances 0.000 claims description 27
- 239000002841 Lewis acid Substances 0.000 claims description 13
- 150000007517 lewis acids Chemical group 0.000 claims description 13
- WCMHCPWEQCWRSR-UHFFFAOYSA-J dicopper;hydroxide;phosphate Chemical compound [OH-].[Cu+2].[Cu+2].[O-]P([O-])([O-])=O WCMHCPWEQCWRSR-UHFFFAOYSA-J 0.000 claims description 6
- 229910019142 PO4 Inorganic materials 0.000 claims description 4
- 230000002950 deficient Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 description 41
- 229910052751 metal Inorganic materials 0.000 description 37
- 239000002184 metal Substances 0.000 description 37
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 33
- 239000000047 product Substances 0.000 description 32
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 26
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- 238000012545 processing Methods 0.000 description 17
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- -1 phosphorus oxoacids Chemical class 0.000 description 15
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 14
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 13
- 239000008187 granular material Substances 0.000 description 13
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- 239000004020 conductor Substances 0.000 description 10
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- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 9
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- 239000002904 solvent Substances 0.000 description 9
- 239000000654 additive Substances 0.000 description 8
- AEIXRCIKZIZYPM-UHFFFAOYSA-M hydroxy(oxo)iron Chemical compound [O][Fe]O AEIXRCIKZIZYPM-UHFFFAOYSA-M 0.000 description 8
- IEECXTSVVFWGSE-UHFFFAOYSA-M iron(3+);oxygen(2-);hydroxide Chemical compound [OH-].[O-2].[Fe+3] IEECXTSVVFWGSE-UHFFFAOYSA-M 0.000 description 8
- 229910000462 iron(III) oxide hydroxide Inorganic materials 0.000 description 8
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- BMTOKWDUYJKSCN-UHFFFAOYSA-K iron(3+);phosphate;dihydrate Chemical compound O.O.[Fe+3].[O-]P([O-])([O-])=O BMTOKWDUYJKSCN-UHFFFAOYSA-K 0.000 description 7
- 230000005855 radiation Effects 0.000 description 7
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- 238000001125 extrusion Methods 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 6
- BPLYVSYSBPLDOA-GYOJGHLZSA-N n-[(2r,3r)-1,3-dihydroxyoctadecan-2-yl]tetracosanamide Chemical compound CCCCCCCCCCCCCCCCCCCCCCCC(=O)N[C@H](CO)[C@H](O)CCCCCCCCCCCCCCC BPLYVSYSBPLDOA-GYOJGHLZSA-N 0.000 description 6
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- RBLGLDWTCZMLRW-UHFFFAOYSA-K dicalcium;phosphate;dihydrate Chemical compound O.O.[Ca+2].[Ca+2].[O-]P([O-])([O-])=O RBLGLDWTCZMLRW-UHFFFAOYSA-K 0.000 description 4
- SDEKDNPYZOERBP-UHFFFAOYSA-H iron(ii) phosphate Chemical compound [Fe+2].[Fe+2].[Fe+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O SDEKDNPYZOERBP-UHFFFAOYSA-H 0.000 description 4
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- ZQKXOSJYJMDROL-UHFFFAOYSA-H aluminum;trisodium;diphosphate Chemical compound [Na+].[Na+].[Na+].[Al+3].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O ZQKXOSJYJMDROL-UHFFFAOYSA-H 0.000 description 2
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- ZBZJARSYCHAEND-UHFFFAOYSA-L calcium;dihydrogen phosphate;hydrate Chemical compound O.[Ca+2].OP(O)([O-])=O.OP(O)([O-])=O ZBZJARSYCHAEND-UHFFFAOYSA-L 0.000 description 2
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- 229910052748 manganese Inorganic materials 0.000 description 1
- RETNOKWGJNESQA-UHFFFAOYSA-L manganese(2+);carbonate;hydrate Chemical compound O.[Mn+2].[O-]C([O-])=O RETNOKWGJNESQA-UHFFFAOYSA-L 0.000 description 1
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- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
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- QUBMWJKTLKIJNN-UHFFFAOYSA-B tin(4+);tetraphosphate Chemical compound [Sn+4].[Sn+4].[Sn+4].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O QUBMWJKTLKIJNN-UHFFFAOYSA-B 0.000 description 1
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- LRXTYHSAJDENHV-UHFFFAOYSA-H zinc phosphate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O LRXTYHSAJDENHV-UHFFFAOYSA-H 0.000 description 1
- 229910000165 zinc phosphate Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
- C23C18/1612—Process or apparatus coating on selected surface areas by direct patterning through irradiation means
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- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1862—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by radiant energy
- C23C18/1868—Radiation, e.g. UV, laser
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
- C23C18/2026—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by radiant energy
- C23C18/204—Radiation, e.g. UV, laser
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/0353—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
- H05K1/0373—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement containing additives, e.g. fillers
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
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- H05K2201/0203—Fillers and particles
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- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
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- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
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- Chemically Coating (AREA)
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Description
(一般式中、aは1~5の数であり、bは0超5以下の数であり、cは2.5~5の数であり、dは0.5~3の数であり、Metは、Li、Na、K、Pb、Cs、Mg、Ca、Sr、Ba、遷移金属(Dブロック)、特にSc、Y、La、Ti、Zr、Hf、Nb、Ta、Cr、Mo、W、Mn、Cu、Zn、Co、Ni、Ag、Au、第3、第4、第5メイングループの金属および半金属、特にB、Al、Ga、In、Si、Sn、Sb、Bi及びランタノイドからなる群から選択される1つ以上の金属を表す)
以下の実施例に従って製造した生成物に対して、D8 Advance A25型回折計(Bruker)及びCuKα放射線を用いてX線回折測定(XRD)を行う。
製造した生成物のストイキオメトリを確認するために、Axios FAST分光計(PANalytical)を用いた蛍光X線分析(XRF)によって、元素分析を行った。
下記材料からなる懸濁液を噴霧造粒した。
i) 35.5kg 鉄(III)酸化物-水酸化物[FeO(OH)又はFe2O3・1H2O]、
ii) 16.5kg 98%ホスホン酸[H3PO3]、
iii)26.5kg 75%リン酸[H3PO4]及び
溶媒: 220kg 水
こうして得られた造粒物を、700℃、フォーミングガス雰囲気(N2中に5体積%のH2を含有)下、平均滞留時間4時間でロータリーキルン内で温度処理した。ほぼ無色~わずかにピンク色の生成物が得られる。生成物のX線ディフラクトグラム(XRD)を、図1に示す。生成物は、PDFカード01-072-1516を用いて特定した。
下記材料からなる懸濁液を噴霧造粒した。
i) 8.45kg 鉄(III)酸化物-水酸化物[FeO(OH)又はFe2O3・1H2O]、
ii) 7.95kg 98%ホスホン酸[H3PO3]、
iii)19.6kg 鉄(III)リン酸塩二水和物[FePO4・2H2O]、
iv) 8.43kg 炭酸マグネシウム[MgCO3]及び
溶媒: 160kg 水
こうして得られた造粒物を、750℃、フォーミングガス雰囲気(N2中に5体積%のH2を含有)下、平均滞留時間3時間でロータリーキルン内で温度処理した。ほぼ無色の生成物が得られる。生成物のX線ディフラクトグラム(XRD)を、図2に示す。生成物は、PDFカードを用いて、主相Mg1.5Fe1.5(PO4)2(PDFカード01-071-6793)及び副相Fe3(PO4)2(PDFカード00-49-1087)の相混合物として特定した。
下記材料からなる懸濁液を噴霧造粒した。
i) 21.75kg 鉄(III)酸化物-水酸化物[FeO(OH)又はFe2O3・1H2O]、
ii) 12.15kg 98%ホスホン酸[H3PO3]、
iii)10.3kg 鉄(III)リン酸塩二水和物[FePO4・2H2O]及び
溶媒: 140kg 水
こうして得られた造粒物を、750℃、フォーミングガス雰囲気(N2中に5体積%のH2を含有)下、平均滞留時間90分でロータリーキルン内で温度処理した。ほぼ無色の生成物が得られる。生成物のX線ディフラクトグラム(XRD)を、図3に示す。生成物は、グラフトナイト構造に結晶化し、PDFカード00-49-1087を用いて特定された。生成物を、50重量%の生成物の粒径が3μm未満となるように粉砕した。粉砕物の粒径分布を図9に示す。
下記材料からなる懸濁液を噴霧造粒した。
i) 11.80kg 鉄(III)酸化物-水酸化物[FeO(OH)又はFe2O3・1H2O]、
ii) 10.70kg 98%ホスホン酸[H3PO3]、
iii)24.8kg 鉄(III)リン酸塩二水和物[FePO4・2H2O]、
IV) 29.8kg 50%苛性アルカリ溶液[KOH]、
V) 1.0kg 75%リン酸[H3PO4]及び
溶媒: 110kg 水
こうして得られた造粒物を、650℃、フォーミングガス雰囲気(N2中に5体積%のH2を含有)下、平均滞留時間3時間でロータリーキルン内で温度処理した。淡い薄緑の生成物が得られる。生成物のX線ディフラクトグラム(XRD)を、図4に示す。生成物は、PDFカード01-076-4615を用いて特定した。
下記材料からなる懸濁液を噴霧造粒した。
i) 10.60kg 鉄(III)酸化物-水酸化物[FeO(OH)又はFe2O3・1H2O]、
ii) 9.65kg 98%ホスホン酸[H3PO3]、
iii)22.30kg 鉄(III)リン酸塩二水和物[FePO4・2H2O]、
IV) 2.15kg 酸化亜鉛[ZnO]、
IV) 29.8kg 50%苛性アルカリ溶液[KOH]、
V) 4.15kg 75%リン酸[H3PO4]及び
溶媒: 120kg 水
こうして得られた造粒物を、600℃、フォーミングガス雰囲気(N2中に5体積%のH2を含有)下、平均滞留時間2時間でロータリーキルン内で温度処理した。薄い灰色の生成物が得られる。生成物のX線ディフラクトグラム(XRD)を、図5に示す。生成物は、PDFカード01-076-4615に応じたKFe(PO4)構造に密接に関連しているように思われる新しい構造種類である。
下記材料からなる懸濁液を噴霧造粒した。
i) 8.85kg 鉄(III)酸化物-水酸化物[FeO(OH)又はFe2O3・1H2O]、
ii) 8.05kg 98%ホスホン酸[H3PO3]、
iii)18.60kg 鉄(III)リン酸塩二水和物[FePO4・2H2O]、
IV) 5.40kg 酸化亜鉛[ZnO]、
IV) 29.8kg 50%苛性アルカリ溶液[KOH]、
V) 9.30kg 75%リン酸[H3PO4]及び
溶媒: 120kg 水
こうして得られた造粒物を、600℃、フォーミングガス雰囲気(N2中に5体積%のH2を含有)下、平均滞留時間2時間でロータリーキルン内で温度処理した。薄い灰色の生成物が得られる。生成物のX線ディフラクトグラム(XRD)を、図6に示す。この生成物は、文献で知られていない。これは、アイソタイプ的に結晶化して、PDFカード01-081-1034に応じたKZn(PO4)を形成する。
下記材料からなる懸濁液を噴霧造粒した。
i) 8.85kg 鉄(III)酸化物-水酸化物[FeO(OH)又はFe2O3・1H2O]、
ii) 8.05kg 98%ホスホン酸[H3PO3]、
iii)18.60kg 鉄(III)リン酸塩二水和物[FePO4・2H2O]、
IV) 8.85kg 炭酸マンガン水和物[MnCO3・H2O]、
IV) 29.8kg 50%苛性アルカリ溶液[KOH]、
V) 9.30kg 75%リン酸[H3PO4]及び
溶媒: 140kg 水
こうして得られた造粒物を、600℃、フォーミングガス雰囲気(N2中に5体積%のH2を含有)下、平均滞留時間2時間でロータリーキルン内で温度処理した。薄い灰色の生成物が得られる。生成物のX線ディフラクトグラム(XRD)を、図7に示す。この生成物は、文献で知られていない。これは、アイソタイプ的に結晶化して、PDFカード01-076-4615に応じたKFe(PO4)を形成する。
下記材料からなる懸濁液を噴霧造粒した。
i) 8.70kg 鉄(III)酸化物-水酸化物[FeO(OH)又はFe2O3・1H2O]、
ii) 8.20kg 98%ホスホン酸[H3PO3]、
iii)19.05kg 鉄(III)リン酸塩二水和物[FePO4・2H2O]、
IV) 63.09kg 水酸化バリウム八水和物[Ba(OH)2・8H2O]、
V) 26.15kg 75%リン酸[H3PO4]及び
溶媒: 250kg 水
こうして得られた造粒物を、800℃、フォーミングガス雰囲気(N2中に5体積%のH2を含有)下、平均滞留時間4時間でロータリーキルン内で温度処理した。薄い灰色の生成物が得られる。生成物のX線ディフラクトグラム(XRD)を、図8に示す。生成物は、アイソタイプ的に結晶化して、PDFカード01-084-1833に応じたBaCoP2O7を形成する。
1kgの水酸化銅リン酸塩を100gの二酸化チタンと共に水を含むリアクターに入れ、1時間攪拌した。得られた調製品をろ過し、含水量が最大で0.5重量%となるまで約120℃で乾燥させた。得られた粉末を、1重量%のリン酸二水素二ナトリウムNa2H2P2O7と共に乾燥混合した。5重量パーセントの混合物を、押出機(Coperion GmbH製ZSK18-type)を用いて、Sabic製PC/ABSコポリマー(LNP(登録商標)COLORCOMP(登録商標)Compound NX05467)に投入(worked)した。その後、そのプラスチックを、射出成形機を用いて加工して約2mmの厚さのプレートを形成した。それらのプレートに、波長1064nmのNd:YAGレーザー(Trumpf)を照射して構造体を生成した。導電路または導電路の前駆体として適切な、均一な金属分離(金属核)が生じた。
一般式Fe2Mg(PO4)2で表される鉄(II)マグネシウムリン酸塩を、1重量%のリン酸二水素二ナトリウムNa2H2P2O7と共に乾燥混合した。5重量パーセントの混合物を、押出機(Coperion GmbH製ZSK18-type)を用いて、ポリアミド6.6(BASF製Ultramid(登録商標))に投入し、造粒物を製造した。その造粒物を更に加工して、3cm×4cm×3mmのプレートを形成した。それらのプレートに、波長1064nmのNd:YAGレーザー(Trumpf)を照射して、導電性構造体を生成した。
3重量パーセントの水酸化銅リン酸塩を、押出機(Coperion GmbH製ZSK18-type)を用いて、ポリアミド6.6(BASF製Ultramid(登録商標))に投入した。押出は、推奨温度範囲の上端である285℃で実行した。この場合、プラスチックの望ましくない変色があった。最初はわずかに緑色を帯びた化合物の色が茶色に変化した。また、押出機の軸上にわずかではあるが、望ましくない金属銅の分離が見つかった。
4重量パーセントの水酸化銅リン酸塩および2重量パーセントの硫酸ナトリウムアルミニウム(SAS)を、押出機(Coperion GmbH製ZSK18-type)を用いて、ポリアミド6.6(BASF製Ultramid(登録商標))に投入し、造粒物を製造した。押出は、推奨温度範囲の上端である285℃で実行した。その造粒物を更に加工して、3cm×4cm×3mmのプレートを形成した。プラスチックの望ましくない変色も押出機の軸上の金属銅の堆積もなかった。それらのプレートに、波長1064nmのNd:YAGレーザー(Trumpf)を照射して、構造体を生成した。導電路または導電路の前駆体として適切な導電性構造体の均一な形成が生じた。
40重量パーセントの鉄(II)オルトリン酸塩Fe3(PO4)2及び1重量パーセントの硫酸ナトリウムアルミニウム(SAS)を、押出機(Coperion GmbH製ZSK18-type)を用いて、LDPE(LyondellBasell製Lupolen(登録商標)1800 S)に投入し、造粒物を製造した。その造粒物を更に加工して、3cm×4cm×3mmのプレートを形成した。プラスチックのわずかな緑色の着色があったが、押出機の軸上への堆積はなかった。それらのプレートに、波長1064nmのNd:YAGレーザー(Trumpf)を照射して、構造体を製造した。導電路または導電路の前駆体として適切な、導電性構造体の均一な形成が生じた。
Claims (2)
- 導電性構造体を製造するための少なくとも1つの無機金属リン酸塩化合物および少なくとも1つの安定剤の組み合わせの使用であって、
前記少なくとも1つの無機金属リン酸塩化合物が、一般式Cu2(OH)PO4で表される水酸化銅リン酸塩であり、
前記少なくとも1つの安定剤がルイス酸であり、ここでルイス酸は非プロトン移動電子不足化合物として定義されることを特徴とする少なくとも1つの無機金属リン酸塩化合物および安定剤の組み合わせの使用。 - その表面に導電性構造体をもつ担体材料であって、微細に分配された少なくとも1つの無機金属リン酸塩化合物および少なくとも1つの安定剤を内部に含み、
前記少なくとも1つの無機金属リン酸塩化合物が、一般式Cu2(OH)PO4で表される水酸化銅リン酸塩であり、
前記少なくとも1つの安定剤がルイス酸であり、ここでルイス酸は非プロトン移動電子不足化合物として定義されることを特徴とする担体材料。
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JP7213823B2 (ja) | 2023-01-27 |
US11718727B2 (en) | 2023-08-08 |
TWI757450B (zh) | 2022-03-11 |
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JP2020515717A (ja) | 2020-05-28 |
JP2022187017A (ja) | 2022-12-15 |
EP3601642A1 (de) | 2020-02-05 |
US20200032028A1 (en) | 2020-01-30 |
MX2019011516A (es) | 2020-02-05 |
CN110475911A (zh) | 2019-11-19 |
KR102665005B1 (ko) | 2024-05-10 |
DE102017106913A1 (de) | 2018-10-04 |
EA201991999A1 (ru) | 2020-02-28 |
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