CN110137183A - 阵列基板及其制造方法 - Google Patents

阵列基板及其制造方法 Download PDF

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CN110137183A
CN110137183A CN201910327454.2A CN201910327454A CN110137183A CN 110137183 A CN110137183 A CN 110137183A CN 201910327454 A CN201910327454 A CN 201910327454A CN 110137183 A CN110137183 A CN 110137183A
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layer
pulse laser
laser
array substrate
drain electrode
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赵金阳
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to CN201910327454.2A priority Critical patent/CN110137183A/zh
Publication of CN110137183A publication Critical patent/CN110137183A/zh
Priority to US16/618,909 priority patent/US11443945B2/en
Priority to PCT/CN2019/117438 priority patent/WO2020215677A1/zh
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Abstract

本发明提供一种阵列基板及其制造方法。阵列基板的制造方法包括步骤：提供一柔性衬底层、制作缓冲层、制作有源层、制作栅极绝缘层、制作栅极层、制作层间绝缘层、制作源漏极层、制作平坦有机层和制作阳极层。阵列基板利用上述的制造方法制造，包括层叠设置的柔性衬底层、缓冲层、有源层、栅极绝缘层、栅极层、层间绝缘层、源漏极层、平坦有机层和阳极层。本发明通过超高脉冲激光的直写技术来熔融铜纳米颗粒方式打印制作阵列基板的栅极层或源漏极层，有效减弱铜氧化，可有助于简化现有工艺，通过直接打印方式实现快捷生产。

Description

阵列基板及其制造方法
技术领域
本发明涉及显示技术领域，尤其涉及一种阵列基板及其制造方法。
背景技术
随着技术的发展，显示设备在向大型化、高画质、高功能化等方向发展，因此提升产品的特性变得非常重要。随着分辨率越高画面尺寸越大，栅极线 (Gate Line)数就会增加，栅极线长度也会增加，这就会导致栅极线的阻值增加。栅极是将输入的信号依次驱动，因此会引发信号传达延误等问题，因此开发更低电阻率的电极材料变得势在必行。而金属铜则比传统的金属铝有更高的电导率，使用低阻抗布线材料铜时非阻抗值比铝低，且考虑成膜厚度时铜比铝有成本更低，因此铜逐渐成为薄膜薄膜晶体管(TFT)电极所需的主要材料。
目前主要采用光刻技术制备薄膜晶体管金属铜电极，其工艺包括物理气相沉积(PVD)成膜、光阻涂布、光刻、湿蚀刻和光阻剥离等多种工艺，工艺较复杂；且该方法为减材制造技术，造成较多的材料浪费。而激光直写技术作为一种增材制造技术，则可以直接由金属纳米颗粒制备得到图案化的金属电极结构，该方法被广泛应用于聚合物、金、银纳米颗粒的微纳加工领域。然而对于铜纳米颗粒来说，该激光加工极易造成铜氧化，导致其电导率降低。因此，需要开发新型的激光直写技术来精细加工薄膜晶体管所需铜电极，且避免铜氧化。
因此，需要设计一种新的阵列基板及其制造方法，来克服现有技术中的缺陷。
发明内容
针对以上现有技术存在的缺点和不足之处，本发明提供一种阵列基板及其制造方法，通过超高脉冲激光的直写技术来熔融铜纳米颗粒方式打印制作阵列基板的栅极层或源漏极层，有效减弱铜氧化。
本发明的一个目的在于，提供一种阵列基板的制造方法，包括以下步骤：
提供一柔性衬底层；
制作缓冲层，在所述柔性衬底层上制作所述缓冲层；
制作有源层，在所述缓冲层上制作所述有源层，并对所述有源层进行图形化处理；
制作栅极绝缘层，在所述有源层上制作栅极绝缘层；
制作栅极层，在所述栅极绝缘层上通过采用脉冲激光熔融铜纳米颗粒方式制作所述栅极层；其中所述脉冲激光的波长范围为350-1064nm；
制作层间绝缘层，在所述栅极层上制作所述层间绝缘层；
制作源漏极层，在所述层间绝缘层上制作所述源漏极层；
制作平坦有机层，在所述源漏极层上制作所述平坦有机层；
制作阳极层，在所述平坦有机层上沉积制作所述阳极层得到阵列基板。
进一步的，其中制作所述栅极层的所述脉冲激光的扫描速度为5-10mm/s。
进一步的，其中所述制作源漏极层具体包括：在所述层间绝缘层上通过采用脉冲激光熔融铜纳米颗粒方式制作所述源漏极层；其中所述脉冲激光的波长范围为350-1064nm。
进一步的，其中制作所述源漏极层的所述脉冲激光的扫描速度为5-10 mm/s。
进一步的，其中所述脉冲激光通过一脉冲激光装置生成。
进一步的，其中所述脉冲激光装置包括依次设置的脉冲激光器、滤光片、光束修正单元、激光扫描单元和激光聚焦单元。具体地讲，所述脉冲激光器用于产生脉冲激光；所述滤光片设置于所述脉冲激光器发射所述脉冲激光的出光口处，所述滤光片用于通过波长范围为350-1064nm的所述脉冲激光；所述光束修正单元设置于所述滤光片远离所述脉冲激光器一侧，所述光束修正单元的中心轴与所述所述脉冲激光的中心轴重合；所述激光扫描单元设置于所述光束修正单元远离所述光束修正单元一侧，用于接收并偏转所述脉冲激光；所述激光聚焦单元设于所述激光扫描单元出光口处，用于聚焦所述脉冲激光。
进一步的，其中所述脉冲激光的扫描速度可以通过控制所述激光扫描单元的扫描震镜的旋转速度进行控制；所述脉冲激光的扫描速度为5-10mm/s。
本发明的一个目的在于，提供一种利用上述的制造方法制造的阵列基板，所述阵列基板包括层叠设置的柔性衬底层、缓冲层、有源层、栅极绝缘层、所述栅极层、层间绝缘层、所述源漏极层、平坦有机层和阳极层。
进一步的，其中所述栅极层或所述源漏极层通过采用脉冲激光熔融铜纳米颗粒方式制作；其中所述脉冲激光的波长范围为350-1064nm。
进一步的，其中所述脉冲激光的扫描速度为5-10mm/s。
本发明的有益效果在于，提供一种阵列基板及其制造方法，通过超高脉冲激光的直写技术来熔融铜纳米颗粒方式打印制作阵列基板的栅极层或源漏极层，有效减弱铜氧化，可有助于简化现有工艺，通过直接打印方式实现快捷生产。
附图说明
图1为本发明其中一实施例的阵列基板的制造流程图；
图2为本发明其中一实施例的阵列基板的结构示意图；
图3为本发明其中一实施例的脉冲激光装置的结构示意图。
图中部件标识如下：
100阵列基板、200脉冲激光装置，
1柔性衬底层、2缓冲层、3有源层、4栅极绝缘层、5栅极层、
6层间绝缘层、7源漏极层、8平坦有机层、9阳极层、61开孔，
31脉冲激光器、32滤光片、33光束修正单元、34激光扫描单元、
35激光聚焦单元、36脉冲激光、37铜纳米颗粒墨水溶液、38基底。
具体实施例中
以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、 [右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。
请参阅图1所示，本发明其中一实施例提供一种阵列基板的制造方法，包括以下步骤：
S1提供一柔性衬底层1；
S2制作缓冲层2，在所述柔性衬底层1上制作所述缓冲层2；
S3制作有源层3，在所述缓冲层2上制作所述有源层3，并对所述有源层 3进行图形化处理；
S4制作栅极绝缘层4，在所述有源层3上制作栅极绝缘层4；
S5制作栅极层5，在所述栅极绝缘层4上通过采用脉冲激光36熔融铜纳米颗粒方式制作所述栅极层5；其中所述脉冲激光36的波长范围为350-1064 nm，优选为350nm,400nm、550nm、600nm、800nm、1064nm；
S6制作层间绝缘层6，在所述栅极层5上制作所述层间绝缘层6；
S7制作源漏极层7，在所述层间绝缘层6上制作所述源漏极层7；
S8制作平坦有机层8，在所述源漏极层7上制作所述平坦有机层8；
S9制作阳极层9，在所述平坦有机层8上沉积制作所述阳极层9得到阵列基板100。
本实施例中，步骤S7所述制作源漏极层7具体包括：在所述层间绝缘层6利用黄光进行开孔61，并通过采用脉冲激光36熔融铜纳米颗粒方式制作所述源漏极层7；所述源漏极层7填充所述开孔61并实现所述源漏极层7与所述有源层3的电连接；其中所述脉冲激光36的波长范围为350-1064nm，优选为350nm,400nm、550nm、600nm、800nm、1064nm。本发明所述脉冲激光36 的波长可在350-1064nm之间，其波长选择铜纳米颗粒最大吸收处530nm左右为佳，而为了进一步提高其吸收效率，可以选择1064nm的激光，因为基于双光子效应，此波长的吸收效率更高，更有利于铜纳米颗粒的加工。
本实施例中，用于制作所述栅极层5或所述源漏极层7的所述脉冲激光 36的扫描速度为5-10mm/s，优选为8mm/s。其中所述脉冲激光36的扫描速度越大可以减少加工时间和减少铜氧化，但较快的速度会导致加工精度降低。所述脉冲激光36较合适的扫描速度为5-10mm/s，优选为8mm/s，可以有效避免铜氧化产生并同时保持加工精度。
本实施例中，所述脉冲激光36通过一脉冲激光装置200生成。请参阅图 3所示，本发明其中一实施例提供一种脉冲激光装置200，用于发出脉冲激光36，所述脉冲激光36可熔融位于基底38上的铜纳米颗粒；其中所述脉冲激光 36的波长范围为350-1064nm，优选为350nm、400nm、550nm、600nm、800nm、 1064nm；所述脉冲激光36的扫描速度为5-10mm/s，优选为8mm/s。
请参阅图3所示，本实施例中，所述脉冲激光装置200包括依次设置的脉冲激光器31、滤光片32、光束修正单元33、激光扫描单元34和激光聚焦单元35。具体地讲，所述脉冲激光器31用于产生脉冲激光36，优选飞秒或纳秒激光器；所述滤光片32设置于所述脉冲激光器31发射所述脉冲激光36的出光口处，所述滤光片32用于通过波长范围为350-1064nm的所述脉冲激光36，所述脉冲激光36通过所述滤光片32可滤掉杂光保证其激光纯度；所述光束修正单元33设置于所述滤光片32远离所述脉冲激光器31一侧，所述光束修正单元33的中心轴与所述所述脉冲激光36的中心轴重合，所述光束修正单元 33来修整所述脉冲激光36可使其光能量分布更均匀；所述激光扫描单元34 设置于所述光束修正单元33远离所述光束修正单元33一侧，用于接收并偏转所述脉冲激光36；所述激光扫描单元34可实现所述脉冲激光36快速扫描，所述脉冲激光36的扫描速度为5-10mm/s；所述激光聚焦单元35设于所述激光扫描单元34出光口处，用于聚焦所述脉冲激光36。通过所述激光聚焦单元 35将所述脉冲激光36聚焦到样品基片上，从而加工铜纳米颗粒。为实现铜电极(指所述栅极层5或所述源漏极层7)的图案化，可以分别通过激光扫描单元34和移动基片来实现。
本发明采用飞秒或纳秒激光器作为激光光源，其波长可在350-1064nm 之间，其波长选择铜纳米颗粒最大吸收处530nm左右为佳，而为了进一步提高其吸收效率，可以选择1064nm的激光，因为基于双光子效应，此波长的吸收效率更高，更有利于铜纳米颗粒的加工。其中所述脉冲激光的扫描速度越大可以减少加工时间和减少铜氧化，但较快的速度会导致加工精度降低。所述脉冲激光36较合适的扫描速度为5-10mm/s，可以有效避免铜氧化同时保持加工精度。
其中，所述激光扫描单元34利用扫描震镜的快速转动实现激光光束的快速扫描，通过程序控制扫描震镜的转动角度使得激光光束按照特定路径进行扫描，从而得到特定图案的铜电极(指所述栅极层5或所述源漏极层7)。其扫描速度可以通过控制扫描震镜的旋转速度进行控制，速度可达到100mm/s。因此，所述脉冲激光36的扫描速度范围为5-100mm/s，优选所述脉冲激光36 的扫描速度范围为5-10mm/s。
在制作铜电极(指所述栅极层5或所述源漏极层7)工艺过程中，首先将铜纳米颗粒混合形成铜纳米颗粒墨水溶液37，铜纳米颗粒墨水溶液37通过旋涂或刮涂的方法在基底38上形成所需厚度的膜层，随后在空气中60度条件下加热10分钟以去除溶剂。之后将高能量脉冲激光36聚焦到铜膜上，利用激光产生的局域热场熔融铜纳米颗粒，使铜聚集到一起固化成型，该方法在极短时间内将铜熔融并聚集，使得铜还未被氧化就已经聚集成型，因此有效地避免的铜氧化，有利于获得高电导率铜电极(指所述栅极层5或所述源漏极层7)。通过按照特定的路径移动所述基底38或所述脉冲激光36，从而得到相应的图案。然后利用氯苯等溶剂洗去未被固化的铜纳米颗粒膜层，这样基底38上便有了我们所需的铜电极(指所述栅极层5或所述源漏极层7)图案。并且洗去的铜纳米颗粒还可以被回收利用，可以有效地避免材料浪费。
所得铜电极(指所述栅极层5或所述源漏极层7)的尺寸精度可以通过改变激光功率和焦点大小来调节。在激光功率超过铜熔融的阈值功率后，随着激光功率的提高，激光加工所能得到的最小线宽越大，则其加工精度越低，但制程时间会变短，因此对于精度要求较低的样品，可通过提高激光功率来节省制程时间。同样的，激光聚焦的焦点越大，加工得到的最小线宽则越大，精度越低。因此为了获得高精度铜电极(指所述栅极层5或所述源漏极层7)结构需要采用合适的激光功率和尽可能小的激光焦点。
本发明利用脉冲激光直写技术制作铜电极(指所述栅极层5或所述源漏极层7)，该方法制程简单方便、节省材料、加工精度高、形貌可控、可以有效地减少铜氧化，有利于获得高电导率铜电极(指所述栅极层5或所述源漏极层 7)；而且对基底38影响小，可以适用于各种基底38，同样也可以用于柔性阵列基板100器件的制备。
本发明的一个目的在于，提供一种利用上述的制造方法制造的阵列基板100，所述阵列基板100包括层叠设置的柔性衬底层1、缓冲层2、有源层3、栅极绝缘层4、栅极层5、层间绝缘层6、源漏极层7、平坦有机层8和阳极层 9。
本实施例中，所述栅极层5或所述源漏极层7通过采用脉冲激光36熔融铜纳米颗粒方式制作；其中所述脉冲激光36的波长范围为350-1064nm，优选为350nm,400nm、550nm、600nm、800nm、1064nm。本发明所述脉冲激光36 的波长可在350-1064nm之间，其波长选择铜纳米颗粒最大吸收处530nm左右为佳，而为了进一步提高其吸收效率，可以选择1064nm的激光，因为基于双光子效应，此波长的吸收效率更高，更有利于铜纳米颗粒的加工。
本实施例中，用于制作所述栅极层5或所述源漏极层7的所述脉冲激光 36的扫描速度为5-10mm/s，优选为8mm/s。其中所述脉冲激光36的扫描速度越大可以减少加工时间和减少铜氧化，但较快的速度会导致加工精度降低。所述脉冲激光36较合适的扫描速度为5-10mm/s，优选为8mm/s，可以有效避免铜氧化产生并同时保持加工精度。
本发明的技术效果在于，提供一种阵列基板100及其制造方法，通过超高脉冲激光的直写技术来熔融铜纳米颗粒方式打印制作阵列基板100的栅极层5 或源漏极层7，有效减弱铜氧化，可有助于简化现有工艺，通过直接打印方式实现快捷生产。
以上所述仅是本发明的优选实施例中，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (10)

1.一种阵列基板的制造方法，其特征在于，包括步骤：
提供一柔性衬底层；
制作缓冲层，在所述柔性衬底层制作所述缓冲层；
制作有源层，在所述缓冲层上制作所述有源层，并对所述有源层进行图形化处理；
制作栅极绝缘层，在所述有源层上制作栅极绝缘层；
制作栅极层，在所述栅极绝缘层上通过采用脉冲激光熔融铜纳米颗粒方式制作所述栅极层；其中所述脉冲激光的波长范围为350-1064nm；
制作层间绝缘层，在所述栅极层上制作所述层间绝缘层；
制作源漏极层，在所述层间绝缘层上制作所述源漏极层；
制作平坦有机层，在所述源漏极层上制作所述平坦有机层；
制作阳极层，在所述平坦有机层上沉积制作所述阳极层得到阵列基板。
2.根据权利要求1所述阵列基板的制造方法，其特征在于，制作所述栅极层的所述脉冲激光的扫描速度为5-10mm/s。
3.根据权利要求1所述阵列基板的制造方法，其特征在于，所述制作源漏极层具体包括：在所述层间绝缘层上通过采用脉冲激光熔融铜纳米颗粒方式制作所述源漏极层；其中所述脉冲激光的波长范围为350-1064nm。
4.根据权利要求3所述阵列基板的制造方法，其特征在于，制作所述源漏极层的所述脉冲激光的扫描速度为5-10mm/s。
5.根据权利要求1所述阵列基板的制造方法，其特征在于，所述脉冲激光通过一脉冲激光装置生成。
6.根据权利要求5所述阵列基板的制造方法，其特征在于，所述脉冲激光装置，包括
脉冲激光器，用于产生脉冲激光；
滤光片，设置于所述脉冲激光器发射所述脉冲激光的出光口处，所述滤光片用于通过波长范围为350-1064nm的所述脉冲激光；
光束修正单元，设置于所述滤光片远离所述脉冲激光器一侧，所述光束修正单元的中心轴与所述所述脉冲激光的中心轴重合；
激光扫描单元，设置于所述光束修正单元远离所述光束修正单元一侧，用于接收并偏转所述脉冲激光；
激光聚焦单元，设于所述激光扫描单元出光口处，用于聚焦所述脉冲激光。
7.根据权利要求6所述阵列基板的制造方法，其特征在于，所述脉冲激光的扫描速度可以通过控制所述激光扫描单元的扫描震镜的旋转速度进行控制；所述脉冲激光的扫描速度为5-10mm/s。
8.一种利用如权利要求1-7中任一项所述的制造方法制造的阵列基板，其特征在于，所述阵列基板包括层叠设置的柔性衬底层、缓冲层、有源层、栅极绝缘层、栅极层、层间绝缘层、源漏极层、平坦有机层和阳极层。
9.根据权利要求8所述的阵列基板，其特征在于，所述栅极层或所述源漏极层通过采用脉冲激光熔融铜纳米颗粒方式制作；其中所述脉冲激光的波长范围为350-1064nm。
10.根据权利要求9所述的阵列基板，其特征在于，所述脉冲激光的扫描速度为5-10mm/s。
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