JP7371980B2 - 垂直型熱電変換素子、並びにこれを用いた熱電発電応用機器又は熱流センサー - Google Patents

垂直型熱電変換素子、並びにこれを用いた熱電発電応用機器又は熱流センサー Download PDF

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JP7371980B2
JP7371980B2 JP2022508305A JP2022508305A JP7371980B2 JP 7371980 B2 JP7371980 B2 JP 7371980B2 JP 2022508305 A JP2022508305 A JP 2022508305A JP 2022508305 A JP2022508305 A JP 2022508305A JP 7371980 B2 JP7371980 B2 JP 7371980B2
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thermoelectric
layer
temperature side
magnetic layer
conversion element
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JPWO2021187347A1 (https=
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裕弥 桜庭
偉男 周
健一 内田
薫 山本
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National Institute for Materials Science
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/85Thermoelectric active materials
    • H10N10/851Thermoelectric active materials comprising inorganic compositions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00Hall-effect devices
    • H10N52/80Constructional details

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  • Inorganic Chemistry (AREA)
  • Hall/Mr Elements (AREA)
JP2022508305A 2020-03-19 2021-03-12 垂直型熱電変換素子、並びにこれを用いた熱電発電応用機器又は熱流センサー Active JP7371980B2 (ja)

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JP2020049595 2020-03-19
JP2020049595 2020-03-19
PCT/JP2021/009982 WO2021187347A1 (ja) 2020-03-19 2021-03-12 垂直型熱電変換素子、並びにこれを用いた熱電発電応用機器又は熱流センサー

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JP7371980B2 true JP7371980B2 (ja) 2023-10-31

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EP (1) EP4123897B1 (https=)
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Families Citing this family (7)

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Publication number Priority date Publication date Assignee Title
JP7669069B2 (ja) * 2021-09-30 2025-04-28 国立研究開発法人物質・材料研究機構 熱電体、熱電発電素子、多層熱電体、多層熱電発電素子、熱電発電機、及び熱流センサ
JP7759024B2 (ja) * 2021-11-30 2025-10-23 日産自動車株式会社 熱流束センサ、該熱流束センサを有する半導体装置、及び熱流束センサの製造方法
JP7768606B2 (ja) * 2022-05-16 2025-11-12 国立研究開発法人物質・材料研究機構 熱流センサ付きペルチェ素子
JP2024087754A (ja) * 2022-12-19 2024-07-01 国立大学法人 東京大学 非線形熱電効果測定装置、非線形熱電効果測定方法、非線形熱電効果測定プログラム、記録媒体、温度揺らぎ環境発電素子および温度揺らぎセンサー
CN115963437B (zh) * 2022-12-21 2023-10-20 南方电网数字电网研究院有限公司 多量程磁传感器、磁场测量方法及导体制备方法
WO2025047581A1 (ja) * 2023-09-01 2025-03-06 国立研究開発法人物質・材料研究機構 熱電装置
TR2024005002A2 (tr) * 2024-04-26 2024-05-21 Erguer Yusuf Furkan Endüstri̇yel bacalardan atik isi geri̇ kazanimi i̇çi̇n bi̇r si̇stem

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009130070A (ja) 2007-11-22 2009-06-11 Keio Gijuku スピン流熱変換素子及び熱電変換素子
WO2014147967A1 (ja) 2013-03-18 2014-09-25 パナソニック株式会社 テラヘルツ電磁波発生装置、テラヘルツ分光装置、およびテラヘルツ電磁波の発生方法
JP2016103535A (ja) 2014-11-27 2016-06-02 トヨタ自動車株式会社 熱電体
WO2018146713A1 (ja) 2017-02-07 2018-08-16 日本電気株式会社 熱電変換素子およびその製造方法
WO2019009308A1 (ja) 2017-07-03 2019-01-10 国立大学法人東京大学 熱電変換素子及び熱電変換デバイス

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Publication number Priority date Publication date Assignee Title
JP2001168403A (ja) * 1999-12-13 2001-06-22 Sumitomo Special Metals Co Ltd 熱電変換素子
JP2003060244A (ja) * 2001-08-10 2003-02-28 Sumitomo Special Metals Co Ltd 冷却素子と熱電変換材料
JP2008147304A (ja) * 2006-12-07 2008-06-26 Toyoda Gosei Co Ltd 熱電変換素子
WO2010058464A1 (ja) * 2008-11-20 2010-05-27 株式会社村田製作所 熱電変換モジュール
JP6079995B2 (ja) 2012-09-28 2017-02-15 国立大学法人東北大学 熱電発電デバイス
JP7316579B2 (ja) * 2018-12-18 2023-07-28 国立大学法人茨城大学 熱電変換装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009130070A (ja) 2007-11-22 2009-06-11 Keio Gijuku スピン流熱変換素子及び熱電変換素子
WO2014147967A1 (ja) 2013-03-18 2014-09-25 パナソニック株式会社 テラヘルツ電磁波発生装置、テラヘルツ分光装置、およびテラヘルツ電磁波の発生方法
JP2016103535A (ja) 2014-11-27 2016-06-02 トヨタ自動車株式会社 熱電体
WO2018146713A1 (ja) 2017-02-07 2018-08-16 日本電気株式会社 熱電変換素子およびその製造方法
WO2019009308A1 (ja) 2017-07-03 2019-01-10 国立大学法人東京大学 熱電変換素子及び熱電変換デバイス

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
上杉良太,フルホイスラー合金Co2MnGaにおける異常ネルンスト効果の規則度依存性,第67回応用物理学会春季学術講演会講演予稿集,Vol.67,2020年02月28日,p.13a-D511-7

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EP4123897A1 (en) 2023-01-25
US20230102920A1 (en) 2023-03-30
EP4123897A4 (en) 2024-05-15
WO2021187347A1 (ja) 2021-09-23
EP4123897B1 (en) 2024-12-11
US11889762B2 (en) 2024-01-30
JPWO2021187347A1 (https=) 2021-09-23

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