JP7370476B2 - 炭化珪素半導体装置の製造方法、炭化珪素半導体装置および電力変換装置 - Google Patents

炭化珪素半導体装置の製造方法、炭化珪素半導体装置および電力変換装置 Download PDF

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JP7370476B2
JP7370476B2 JP2022553311A JP2022553311A JP7370476B2 JP 7370476 B2 JP7370476 B2 JP 7370476B2 JP 2022553311 A JP2022553311 A JP 2022553311A JP 2022553311 A JP2022553311 A JP 2022553311A JP 7370476 B2 JP7370476 B2 JP 7370476B2
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trench
silicon carbide
carbide semiconductor
semiconductor device
schottky
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JPWO2022070317A5 (https=
JPWO2022070317A1 (https=
Inventor
基 吉田
梨菜 田中
裕 福井
英之 八田
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/146—VDMOS having built-in components the built-in components being Schottky barrier diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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JP2022553311A 2020-09-30 2020-09-30 炭化珪素半導体装置の製造方法、炭化珪素半導体装置および電力変換装置 Active JP7370476B2 (ja)

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PCT/JP2020/037178 WO2022070317A1 (ja) 2020-09-30 2020-09-30 炭化珪素半導体装置の製造方法、炭化珪素半導体装置および電力変換装置の製造方法

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JPWO2022070317A1 JPWO2022070317A1 (https=) 2022-04-07
JPWO2022070317A5 JPWO2022070317A5 (https=) 2022-11-10
JP7370476B2 true JP7370476B2 (ja) 2023-10-27

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US (1) US20230290874A1 (https=)
JP (1) JP7370476B2 (https=)
CN (1) CN116195070B (https=)
DE (1) DE112020007652T5 (https=)
WO (1) WO2022070317A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112019007048T5 (de) * 2019-03-18 2021-12-30 Mitsubishi Electric Corporation Siliciumcarbid-halbleitereinheit und leistungswandler
JP7836647B2 (ja) * 2021-08-20 2026-03-27 ローム株式会社 半導体装置
US20240290879A1 (en) * 2023-02-27 2024-08-29 Globalfoundries U.S. Inc. Field-effect transistors with deposited gate dielectric layers
CN119092547A (zh) * 2024-08-30 2024-12-06 长飞先进半导体(武汉)有限公司 功率器件及制备方法、功率模块、功率转换电路和车辆
CN120614847B (zh) * 2025-08-11 2025-11-11 浙江省白马湖实验室有限公司 一种集成低势垒二极管的鳍式场效应晶体管及其制造方法
CN121240486B (zh) * 2025-12-02 2026-03-20 广东芯粤能半导体有限公司 沟槽型功率器件及其制备方法、电子设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007184327A (ja) 2006-01-04 2007-07-19 Sumitomo Electric Ind Ltd 半導体装置およびその製造方法
JP2015079894A (ja) 2013-10-17 2015-04-23 新電元工業株式会社 半導体装置及び半導体装置の製造方法
JP2018182235A (ja) 2017-04-20 2018-11-15 国立研究開発法人産業技術総合研究所 半導体装置および半導体装置の製造方法
WO2020145109A1 (ja) 2019-01-08 2020-07-16 三菱電機株式会社 半導体装置及び電力変換装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6641488B2 (ja) * 2016-08-25 2020-02-05 三菱電機株式会社 半導体装置
CN106876485B (zh) * 2017-03-06 2020-11-10 北京世纪金光半导体有限公司 一种集成肖特基二极管的SiC双沟槽型MOSFET器件及其制备方法
DE102017128633B4 (de) * 2017-12-01 2024-09-19 Infineon Technologies Ag Siliziumcarbid-halbleiterbauelement mit grabengatestrukturen und abschirmgebieten
JP7310144B2 (ja) * 2019-01-10 2023-07-19 富士電機株式会社 炭化珪素半導体装置
WO2021014570A1 (ja) * 2019-07-23 2021-01-28 三菱電機株式会社 炭化珪素半導体装置、電力変換装置および炭化珪素半導体装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007184327A (ja) 2006-01-04 2007-07-19 Sumitomo Electric Ind Ltd 半導体装置およびその製造方法
JP2015079894A (ja) 2013-10-17 2015-04-23 新電元工業株式会社 半導体装置及び半導体装置の製造方法
JP2018182235A (ja) 2017-04-20 2018-11-15 国立研究開発法人産業技術総合研究所 半導体装置および半導体装置の製造方法
WO2020145109A1 (ja) 2019-01-08 2020-07-16 三菱電機株式会社 半導体装置及び電力変換装置

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WO2022070317A1 (ja) 2022-04-07
CN116195070B (zh) 2024-11-26
DE112020007652T5 (de) 2023-07-13
US20230290874A1 (en) 2023-09-14
CN116195070A (zh) 2023-05-30
JPWO2022070317A1 (https=) 2022-04-07

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