JP7366913B2 - Euv光源内のデブリを制御するための装置及び方法 - Google Patents
Euv光源内のデブリを制御するための装置及び方法 Download PDFInfo
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- JP7366913B2 JP7366913B2 JP2020544828A JP2020544828A JP7366913B2 JP 7366913 B2 JP7366913 B2 JP 7366913B2 JP 2020544828 A JP2020544828 A JP 2020544828A JP 2020544828 A JP2020544828 A JP 2020544828A JP 7366913 B2 JP7366913 B2 JP 7366913B2
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- 238000000034 method Methods 0.000 title claims description 33
- 239000013077 target material Substances 0.000 claims description 109
- 230000005855 radiation Effects 0.000 claims description 46
- 238000002844 melting Methods 0.000 claims description 22
- 230000008018 melting Effects 0.000 claims description 22
- 230000005484 gravity Effects 0.000 claims description 11
- 238000004891 communication Methods 0.000 claims description 6
- 239000012530 fluid Substances 0.000 claims description 6
- 238000007790 scraping Methods 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 description 64
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 63
- 239000007789 gas Substances 0.000 description 20
- 239000007788 liquid Substances 0.000 description 15
- 230000003287 optical effect Effects 0.000 description 11
- 239000007787 solid Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000007726 management method Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 230000000116 mitigating effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000005382 thermal cycling Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000009304 pastoral farming Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 150000003606 tin compounds Chemical class 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
- H05G2/005—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state containing a metal as principal radiation generating component
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- X-Ray Techniques (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862648505P | 2018-03-27 | 2018-03-27 | |
US62/648,505 | 2018-03-27 | ||
PCT/EP2019/056899 WO2019185406A1 (fr) | 2018-03-27 | 2019-03-20 | Appareil et procédé de commande de débris dans une source de lumière uve |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021516774A JP2021516774A (ja) | 2021-07-08 |
JP7366913B2 true JP7366913B2 (ja) | 2023-10-23 |
Family
ID=65991764
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020544828A Active JP7366913B2 (ja) | 2018-03-27 | 2019-03-20 | Euv光源内のデブリを制御するための装置及び方法 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP7366913B2 (fr) |
KR (1) | KR20200133740A (fr) |
CN (1) | CN111903195A (fr) |
NL (1) | NL2022770A (fr) |
WO (1) | WO2019185406A1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2023173936A (ja) * | 2022-05-27 | 2023-12-07 | ウシオ電機株式会社 | 光源装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002313598A (ja) | 2001-01-10 | 2002-10-25 | Nikon Corp | デブリ除去装置、光源及び露光装置 |
JP2006216966A (ja) | 2005-01-10 | 2006-08-17 | Asml Netherlands Bv | 放射線源によって放出される放射線から粒子をフィルタ除去するためのフィルタ・システム、放射線源とこの放射線源によって放出される放射線から粒子をフィルタ除去するためのフィルタ・システムと放射線を処理するための処理システムとを有する装置、そのような装置を有するリソグラフィ装置、および放射線源から放出されて伝搬している放射線から粒子をフィルタ除去する方法 |
JP2006523038A (ja) | 2003-04-08 | 2006-10-05 | サイマー インコーポレイテッド | Euv光源用コレクタ |
JP2012523666A (ja) | 2009-04-09 | 2012-10-04 | サイマー インコーポレイテッド | Euv生成チャンバにおけるはね返り防止のための液滴捕集器に関するシステム、方法、及び装置 |
JP2017201424A (ja) | 2012-06-22 | 2017-11-09 | エーエスエムエル ネザーランズ ビー.ブイ. | 放射源及びリソグラフィ装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7602472B2 (en) * | 2007-06-12 | 2009-10-13 | Asml Netherlands B.V. | Contamination prevention system, lithographic apparatus, radiation source, and method for manufacturing a device |
JP2009224182A (ja) * | 2008-03-17 | 2009-10-01 | Ushio Inc | 極端紫外光光源装置 |
EP2170021B1 (fr) * | 2008-09-25 | 2015-11-04 | ASML Netherlands B.V. | Module source, source de radiation et appareil lithographique |
US9301382B2 (en) * | 2013-12-02 | 2016-03-29 | Asml Netherlands B.V. | Apparatus for and method of source material delivery in a laser produced plasma EUV light source |
US9625824B2 (en) * | 2015-04-30 | 2017-04-18 | Taiwan Semiconductor Manufacturing Company, Ltd | Extreme ultraviolet lithography collector contamination reduction |
-
2019
- 2019-03-20 NL NL2022770A patent/NL2022770A/en unknown
- 2019-03-20 JP JP2020544828A patent/JP7366913B2/ja active Active
- 2019-03-20 KR KR1020207026497A patent/KR20200133740A/ko active IP Right Grant
- 2019-03-20 WO PCT/EP2019/056899 patent/WO2019185406A1/fr active Application Filing
- 2019-03-20 CN CN201980021477.9A patent/CN111903195A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002313598A (ja) | 2001-01-10 | 2002-10-25 | Nikon Corp | デブリ除去装置、光源及び露光装置 |
JP2006523038A (ja) | 2003-04-08 | 2006-10-05 | サイマー インコーポレイテッド | Euv光源用コレクタ |
JP2006216966A (ja) | 2005-01-10 | 2006-08-17 | Asml Netherlands Bv | 放射線源によって放出される放射線から粒子をフィルタ除去するためのフィルタ・システム、放射線源とこの放射線源によって放出される放射線から粒子をフィルタ除去するためのフィルタ・システムと放射線を処理するための処理システムとを有する装置、そのような装置を有するリソグラフィ装置、および放射線源から放出されて伝搬している放射線から粒子をフィルタ除去する方法 |
JP2012523666A (ja) | 2009-04-09 | 2012-10-04 | サイマー インコーポレイテッド | Euv生成チャンバにおけるはね返り防止のための液滴捕集器に関するシステム、方法、及び装置 |
JP2017201424A (ja) | 2012-06-22 | 2017-11-09 | エーエスエムエル ネザーランズ ビー.ブイ. | 放射源及びリソグラフィ装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20200133740A (ko) | 2020-11-30 |
WO2019185406A1 (fr) | 2019-10-03 |
JP2021516774A (ja) | 2021-07-08 |
NL2022770A (en) | 2019-10-02 |
CN111903195A (zh) | 2020-11-06 |
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