WO2019185406A1 - Appareil et procédé de commande de débris dans une source de lumière uve - Google Patents

Appareil et procédé de commande de débris dans une source de lumière uve Download PDF

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Publication number
WO2019185406A1
WO2019185406A1 PCT/EP2019/056899 EP2019056899W WO2019185406A1 WO 2019185406 A1 WO2019185406 A1 WO 2019185406A1 EP 2019056899 W EP2019056899 W EP 2019056899W WO 2019185406 A1 WO2019185406 A1 WO 2019185406A1
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WO
WIPO (PCT)
Prior art keywords
target material
residual target
residual
tin
melted
Prior art date
Application number
PCT/EP2019/056899
Other languages
English (en)
Inventor
Marc Guy Langlois
Robert Gabriël Maria LANSBERGEN
Martinus Hendrikus Antonius Leenders
Henricus Gerardus Tegenbosch
Original Assignee
Asml Netherlands B.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands B.V. filed Critical Asml Netherlands B.V.
Priority to JP2020544828A priority Critical patent/JP7366913B2/ja
Priority to CN201980021477.9A priority patent/CN111903195A/zh
Priority to KR1020207026497A priority patent/KR20200133740A/ko
Publication of WO2019185406A1 publication Critical patent/WO2019185406A1/fr

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • H05G2/005—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state containing a metal as principal radiation generating component

Definitions

  • the present disclosure relates to apparatus for and methods of generating extreme ultraviolet (“EUV”) radiation from a plasma created through discharge or laser ablation of a target material in a vessel.
  • EUV extreme ultraviolet
  • optical elements are used, for example, to collect and direct the radiation for use in semiconductor photolithography and inspection.
  • Extreme ultraviolet radiation e.g., electromagnetic radiation having wavelengths of around 50 nm or less (also sometimes referred to as soft x-rays), and including radiation at a wavelength of about 13.5 nm, can be used in photolithography processes to produce extremely small features in substrates such as silicon wafers.
  • Methods for generating EUV radiation include converting a target material to a plasma state.
  • the target material preferably includes at least one element, e.g., xenon, lithium or tin, with one or more emission lines in the EUV portion of the electromagnetic spectrum.
  • the target material can be solid, liquid, or gas.
  • LPP laser produced plasma
  • the required plasma can be produced by using a laser beam to irradiate a target material having the required line-emitting element.
  • One LPP technique involves generating a stream of target material droplets and irradiating at least some of the droplets with one or more laser radiation pulses.
  • Such LPP sources generate EUV radiation by coupling laser energy into a target material having at least one EUV emitting element, creating a highly ionized plasma with electron temperatures of several lO's of eV.
  • the plasma is typically produced in a sealed vessel, e.g., a vacuum chamber, and the resultant EUV radiation is monitored using various types of metrology equipment.
  • the processes used to generate plasma also typically generate undesirable by-products in the plasma chamber which can include out-of-band radiation, high energy ions, and debris, e.g., atoms and/or clumps/microdroplets of residual target material.
  • a near-normal-incidence mirror (often termed a “collector mirror” or simply a “collector”) is positioned to collect, direct, and, in some arrangements, focus at least a portion of the radiation to an intermediate location.
  • the collected radiation may then be relayed from the intermediate location to a set of optics, a reticle, detectors and ultimately to a silicon wafer.
  • the collector is advantageously implemented as a multi-layer mirror (“MLM”).
  • MLM multi-layer mirror
  • this MLM is generally made up of alternating layers of material (the MLM stack) over a foundation or substrate.
  • System optics may also be configured as a coated optical element even if it is not implemented as an MLM.
  • the optical elements and, in particular, the collector must be placed within the vessel with the plasma to collect and redirect the EUV radiation.
  • the environment within the chamber is inimical to the optical elements and so limits their useful lifetime, for example, by degrading reflectivity.
  • An optical element within the environment may be exposed to high energy ions or particles of target material.
  • the particles of target material which are essentially debris from the laser vaporization process, can contaminate the optical element’s exposed surface. Particles of target material can also cause physical damage to and localized heating of the MLM surface.
  • H 2 gas at pressures in the range of about 0.5 to about 3 mbar is used in the vacuum chamber as a buffer gas for debris mitigation.
  • Hydrogen is relatively transparent to EUV radiation having a wavelength of about 13.5 nm and so is preferred to other candidate gases such as He,
  • Ar or other gases which exhibit a higher absorption at about 13.5 nm.
  • H 2 gas is introduced into the vacuum chamber to slow down the energetic debris
  • H 2 gas H 2 gas which may also be counter to the debris trajectory and away from the collector. This serves to reduce the damage of deposition, implantation, and sputtering target material on the optical coating of the collector.
  • one technique for controlling tin dispersal involves capturing tin from vapor or particles on a surface heated to above the meting point of tin. There the tin melts (or remains molten) and is caused to flow to a capture receptacle. Liquid tin, however, tends to erupt or“spit” in the presence of hydrogen radicals such as are found in an EUV chamber, and this ejected tin can strike the collector. This is a major contributor to collector degradation. Second, the liquid tin typically does not flow as intended.
  • structures within the chamber such as vanes and a gutter for a scrubber provided to remove some or all of the tin vapor in the chamber may drip liquid tin onto the collector.
  • the scrubber gutter may overflow and liquid tin may run down the back of the vanes creating a thermal short (i.e., an unintended heat conductive path) and clogging the flow path to the capture receptacle.
  • liquid tin is highly corrosive and leads to failures of, for example, the electrical heaters used to maintain the collection surfaces above the meting point of tin.
  • the flow restriction caused by tin accumulation leads to the gas finding a path through smaller spaces in the vanes and collector causing significantly increased collector degradation by tin deposition.
  • a scrubber may be added to areas such as the top of the vanes to capture entrained tin by precipitating it out of the vapor.
  • the scrubber surface may be maintained above the melting point of tin so that liquid tin may flow down the vanes and into a receptacle. Liquid tin in the scrubber may, however, still spit onto the collector and drip from the gutter onto the collector again, increasing the collector degradation.
  • Altering the scrubber geometry by, for example, changing the size and tilt of the scrubber vanes, may improve performance but cannot entirely eliminate the tendency of the scrubber to spit on the collector or onto a cold surface and clogging the exhaust.
  • the process of generating EUV light may also cause target material to be deposited on the walls of the vessel. Controlling target material deposition on the vessel walls is important for achieving an acceptably long lifetime of EUV sources placed in production. Also, managing target material flux from the irradiation site is important for ensuring that the waste target material mitigation system works as intended.
  • tin management techniques are used for different portions of the“tin path,” that is, the path from the chamber liner to the imaging relay mirrors that redirect light leaving the chamber.
  • a combination of solid and liquid tin techniques is used together with an exhaust manifold to manage the dispersal and collection of tin. Zones in the exhaust stream are identified and the proper technique for handling the exhaust gas stream is used in each of these zones based upon their differing requirements.
  • an apparatus for generating EUV radiation comprising a vessel and a residual target material collection surface having a first position at which the residual target material collection surface is arranged to collect residual target material from an irradiation region and a second position occluded from an interior of at least a portion of a wall of the vessel at which the residual target material collection surface is arranged to release residual target material collected at the first position, and a temperature controller arranged to maintain the residual target material collection surface below a melting temperature of the target material in the first position and above a melting temperature of the target material in the second position.
  • the residual target material collection surface may comprise a surface of a belt. The belt may cooled in the first position and heated in the second position.
  • the apparatus may further comprise at least one scrubber positioned adjacent the belt in the second position and arranged to remove residual target material from the belt.
  • the at least one scrubber may be positioned so that residual target material removed from the belt flows by force of gravity to a receptacle.
  • the apparatus may further comprise a chamber exhaust manifold in fluid communication with the chamber.
  • the chamber exhaust manifold may have a liner and at least part of the liner may be heated.
  • the residual target material collection surface may comprise a shield.
  • the shield may be cooled in the first position and heated in the second position.
  • the shield may be arranged to pivot to move from the first position to the second position.
  • the shield may be arranged to move laterally from the first position to the second position.
  • the second position may be selected so that molten residual target material flows from the shield by force of gravity to a receptacle.
  • the apparatus may further comprise a chamber exhaust manifold in fluid communication with the chamber.
  • the chamber exhaust manifold may have a liner and at least part of the liner may be heated.
  • a method of controlling residual target material in an apparatus for generating EUV radiation comprising the steps of accumulating residual target material on a surface at a first position, the surface being at a temperature below a melting temperature of the target material, moving the surface to a second position at which the surface is at a temperature above a melting temperature of the residual target material to melt the residual target material, and removing the melted residual target material from the surface.
  • the step of removing the melted residual target material from the surface may comprise scraping the melted residual target material from the surface.
  • the step of removing the melted residual target material from the surface may comprise causing the melted residual target material to flow from the surface.
  • FIG. 1 is a schematic, not-to-scale view of an overall broad conception for a laser- produced plasma EUV radiation source system according to an aspect of the present invention.
  • FIG. 2 is a not-to-scale diagram showing a possible arrangement of a vessel and exhaust systems used in a laser-produced plasma EUV radiation source system according to an aspect of the present invention.
  • FIG. 3 is a not-to-scale view showing a possible arrangement of a target material control system for a vessel used in a laser-produced plasma EUV radiation source system according to an aspect of the present invention.
  • FIG. 4A is a not-to-scale view showing a possible arrangement of a target material control system for the throat portion of a vessel used in a laser-produced plasma EUV radiation source system according to an aspect of an embodiment of the present invention.
  • FIG. 4B is a not-to-scale view showing another possible arrangement of a target material control system for the throat portion of a vessel used in a laser-produced plasma EUV radiation source system according to an aspect of an embodiment of the present invention.
  • FIG. 5A is a not-to-scale view showing another possible arrangement of a target material control system element for the throat portion of a vessel used in a laser-produced plasma EUV radiation source system according to an aspect of an embodiment of the present invention.
  • FIG. 5B is a top view of the arrangement of FIG. 5A.
  • FIG. 6 is a not-to-scale view showing additional elements of a target material control system element for the throat portion of a vessel used in a laser-produced plasma EUV radiation source system according to an aspect of an embodiment of the present invention.
  • the EUV radiation source 10 may include a pulsed or continuous laser source 22, which may for example be a pulsed gas discharge C0 2 laser source producing a beam 12 of radiation at 10.6 pm or 1 pm.
  • the pulsed gas discharge CO2 laser source may have DC or RF excitation operating at high power and at a high pulse repetition rate.
  • the EUV radiation source 10 also includes a target delivery system 24 for delivering target material in the form of liquid droplets or a continuous liquid stream.
  • the target material is a liquid, but it could also be a solid or gas.
  • the target material may be made up of tin or a tin compound, although other materials could be used.
  • the target material delivery system 24 introduces droplets 14 of the target material into the interior of a vacuum chamber 26 to an irradiation region 28 where the target material may be irradiated to produce plasma.
  • the vacuum chamber 26 may be provided with a liner. In some cases, an electrical charge is placed on the target material to permit the target material to be steered toward or away from the irradiation region 28.
  • an irradiation region is a region where target material irradiation may or is intended to occur, and is an irradiation region even at times when no irradiation is actually occurring.
  • the EUV light source may also include a beam steering system 32.
  • the components are arranged so that the droplets 14 travel substantially horizontally.
  • the direction from the laser source 22 towards the irradiation region 28, that is, the nominal direction of propagation of the beam 12, may be taken as the Z axis.
  • the path the droplets 14 take from the target material delivery system 24 to the irradiation region 28 may be taken as the X axis.
  • the view of FIG. 1 is thus normal to the XZ plane.
  • the orientation of the EUV radiation source 10 is preferably rotated with respect to gravity as shown, with the arrow G showing the preferred orientation with respect to gravitationally down. This orientation applies to the EUV source but not necessarily to optically downstream components such as a scanner and the like.
  • the EUV radiation source 10 may also include an EUV light source controller system 60, a laser firing control system 65, along with the beam steering system 32.
  • the EUV radiation source 10 may also include a detector such as a target position detection system which may include one or more droplet imagers 70 that generate an output indicative of the absolute or relative position of a target droplet, e.g., relative to the irradiation region 28, and provide this output to a target position detection feedback system 62.
  • the target material delivery system 24 may include a target delivery control system 90.
  • the target delivery control system 90 is operable in response to a signal, for example, the target error described above, or some quantity derived from the target error provided by the system controller 60, to adjust paths of the target droplets 14 through the irradiation region 28. This may be accomplished, for example, by repositioning the point at which a target delivery mechanism 92 releases the target droplets 14. The droplet release point may be repositioned, for example, by tilting the target delivery mechanism 92 or by laterally translating the target delivery mechanism 92.
  • the target delivery mechanism 92 extends into the chamber 26 and is preferably externally supplied with target material and a gas source to place the target material in the target delivery mechanism 92 under pressure.
  • the radiation source 10 may also include one or more optical elements.
  • a collector 30 is used as an example of such an optical element, but the discussion applies to other optical elements as well.
  • the collector 30 may be a normal incidence reflector, for example, implemented as an MLM with additional thin barrier layers, for example B 4 C, ZrC, S13N4 or C, deposited at each interface to effectively block thermally-induced interlayer diffusion.
  • Other substrate materials such as aluminum (Al) or silicon (Si), can also be used.
  • the collector 30 may be in the form of a prolate ellipsoid, with a central aperture to allow the laser radiation 12 to pass through and reach the irradiation region 28.
  • the collector 30 may be, e.g., in the shape of a ellipsoid that has a first focus at the irradiation region 28 and a second focus at a so-called intermediate point 40 (also called the intermediate focus 40) where the EUV radiation may be output from the EUV radiation source 10 and input to, e.g., an integrated circuit lithography scanner 50 which uses the radiation, for example, to process a silicon wafer workpiece 52 in a known manner using a reticle or mask 54. The silicon wafer workpiece 52 is then additionally processed in a known manner to obtain an integrated circuit device.
  • an integrated circuit lithography scanner 50 which uses the radiation, for example, to process a silicon wafer workpiece 52 in a known manner using a reticle or mask 54.
  • the silicon wafer workpiece 52 is then additionally processed in a known manner to obtain an integrated circuit device.
  • FIG. 1 also includes a temperature sensor 34, e.g., a thermocouple positioned within the chamber 26 to measure the local temperature, i.e., temperature at the sensor, of the gas within the chamber 26.
  • a temperature sensor 34 e.g., a thermocouple positioned within the chamber 26 to measure the local temperature, i.e., temperature at the sensor, of the gas within the chamber 26.
  • FIG. 1 shows one temperature sensor but it will be apparent that additional temperature sensors may be used.
  • the temperature sensor 34 generates a signal indicative of the measured temperature and supplies it as an additional input to the controller 60.
  • the controller 60 bases the control signal it supplies to the beam steering system 32 at least in part on this temperature signal.
  • FIG. 3 shows a chamber design having asymmetrical exhaust with a large throat area. The design of FIG. 3 has two exhaust ports 60 In this design, large amounts of tin may be deposited at the location 70 on the wall of the exhaust manifold, opposite of this large throat. If this surface is maintained at a temperature above the melting point of tin, then molten tin may spit onto the collector.
  • tin is melted or maintained in a liquid state in locations where the liquid tin cannot or is unlikely to spit onto the interior of the chamber or onto the collector. High flow conductance may be maintained and the exhaust gases are scrubbed. According to another aspect, tin can drain in situ and while the source is operating.
  • FIG. 4A An example of such a system is shown in FIG. 4A. Tin debris from an irradiation region 28 is captured by the two heated scrubbers 80. These scrubbers 80 are located in respective hot zones that that are fully shielded from spitting back into the inner surface 84 of the chamber 26 including onto a liner 84 at least partially covering the an exhaust plenum wall 86. The portion 88 of the liner 84 adjacent the scrubbers 80 can be heated above melting to“drip off’ excess solid tin. These surfaces are again shielded from spitting on the collector.
  • the arrangement includes an endless belt 90 covering a portion of the back or outside wall 94 of the exhaust plenum.
  • This belt 90 has sandwiched between it cold (e.g., water cooled) plates 92, either touching or near touching to keep the surface well below the melting temperature of tin.
  • cold e.g., water cooled
  • the belts 90 may be moved continuously, intermittently, ratchetted ahead periodically, etc. to carry the solid tin to the hot scrubbers 80. Where the endless belt 90 meets the hot scrubbers 80, there may be a heated doctor blade to melt the tin and scrape the belt 90 clean, allowing the belt 90 to return to the deposition area ready to collect more tin. This arrangement ensures that no tin will be able to spit onto the collector or liner.
  • the belt 90 is preferably placed in areas where the largest amounts of tin deposition may be expected such as the throat area.
  • FIG. 4B Another example of such a system is shown in FIG. 4B.
  • tin debris from an irradiation region 28 is captured by the two heated scrubbers 80 located in respective hot zones that that are fully shielded from spitting back into the inner surface 84 of the liner 86 and the collector.
  • the arrangement includes a wedge-shaped diverter 96 positioned on the wall of the exhaust plenum at the throat exit. The diverter 96 forces the flow of debris from the irradiation region 28 (open arrow) into portions of the exhaust manifold shielded from the irradiation region 28 (curved arrows).
  • diverter 94 redirects the flow of exhaust gas and the entrained debris away from the back wall at the exit of the throat and directed more directly into the scrubbers.
  • Diverter 96 is normally cooled to below the melting point of the target material but can be heated to above tin melting temperatures to permit the solid accumulated tin on the diverter 96 to flow away way and down a tin drain. Tin mostly spits perpendicular to the surface of the diverter 96 facing away from the interior of the chamber 26, which greatly limits the amount of spitting that could find its way to the optics in the tool.
  • FIGS. 5A and 5B show a throat area with a shield 110.
  • the shield 110 is connected to the wall of the throat with a hinge 112 so it can be pivoted behind the opening to a position (shown in phantom) where it can be heated and the tin allowed to drip off.
  • FIG. 5B is a top view of the arrangement of FIG. 5A showing rotation of the shield 110 around the hinge 112.
  • These shields 110 may be positioned so as to minimize any adverse impact on conductance and so that any spitting liquid tin does not have a clear path to the collector or liner.
  • a solid tin temperature surface is presented to areas that could spit into the liner and collector.
  • the tin may then be removed by any one of several methods, including temperature cycling of the surface, i.e., temporarily raising the temperature of the surface to above the melting point of tin.
  • the surface may be moved to a shielded location for drip off, or covered during drip off.
  • liquid tin is recovered (scrubbed) from the gas stream and delivered to a suitable isolated location (e.g., no clear path to collector or liner) to drain.
  • the walls upstream of the scrubbers may be maintained at a temperature that tin can drip off of them.
  • temperature cycling moving a liner part to a safe location for drip off, ion generation for cleaning and keeping clean, or a partial cover during drip off may be used.
  • FIG. 6 shows an embodiment in which the throat 100 has been moved to the uppermost position possible of the chamber to limit the amount of debris overshoot between on and off plasma, i.e., when plasma is or is not being created. This increases the efficiency of debris exhaust and limits the amount of debris deposited on the internal wall surfaces.
  • the endless belt 90 of the embodiment of FIG. 4A may be used, or a heated plate may be placed at the output of the throat 100.
  • the exhaust manifold can be made circular (pipe like) and thus have round scrubbers 110 instead of the rectangular scrubbers.
  • Tin drain 115 collects the molten tin and passes it to a tin bucket or receptacle 117.
  • a freeze valve 119 permits draining of the tin receptacle 117 through conduit 121 without interrupting operation of the source. Tin drains may be placed on both sides of the source.
  • Apparatus for generating EUV radiation comprising:
  • a vessel a residual target material collection surface having a first position at which the residual target material collection surface is arranged to collect residual target material from an irradiation region and a second position occluded from an interior of at least a portion of a wall of the vessel at which the residual target material collection surface is arranged to release residual target material collected at the first position;
  • a temperature controller arranged to maintain the residual target material collection surface below a melting temperature of the target material in the first position and above a melting temperature of the target material in the second position.
  • Apparatus as in clause 2 further comprising at least one scrubber positioned adjacent the belt in the second position and arranged to remove residual target material from the belt.
  • Apparatus as in clause 8 further comprising a chamber exhaust manifold in fluid communication with the chamber.
  • a method of controlling residual target material in an apparatus for generating EUV radiation comprising the steps of:

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)

Abstract

L'invention concerne un système UVE, signifiant UV extrême, comprenant des moyens pour accumuler des débris de matériau cible sous une forme liquide, dans lequel système le matériau cible est bloqué et ne peut éclater sur l'optique et dans lequel le matériau cible peut être amené à se solidifier et être ensuite transporté vers un emplacement où il peut être fondu et autorisé à s'évacuer sans contaminer le collecteur.
PCT/EP2019/056899 2018-03-27 2019-03-20 Appareil et procédé de commande de débris dans une source de lumière uve WO2019185406A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2020544828A JP7366913B2 (ja) 2018-03-27 2019-03-20 Ｅｕｖ光源内のデブリを制御するための装置及び方法
CN201980021477.9A CN111903195A (zh) 2018-03-27 2019-03-20 控制euv光源中的碎片的装置和方法
KR1020207026497A KR20200133740A (ko) 2018-03-27 2019-03-20 Ｅｕｖ 광원에서 부스러기를 제어하기 위한 장치 및 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862648505P 2018-03-27 2018-03-27
US62/648,505 2018-03-27

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WO2019185406A1 true WO2019185406A1 (fr) 2019-10-03

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KR (1) KR20200133740A (fr)
CN (1) CN111903195A (fr)
NL (1) NL2022770A (fr)
WO (1) WO2019185406A1 (fr)

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JP2023173936A (ja) * 2022-05-27 2023-12-07 ウシオ電機株式会社 光源装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100085547A1 (en) * 2008-09-25 2010-04-08 Asml Netherlands B.V. Source module, radiation source and lithographic apparatus
WO2013189827A2 (fr) * 2012-06-22 2013-12-27 Asml Netherlands B.V. Source de rayonnement et appareil lithographique

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020090054A1 (en) * 2001-01-10 2002-07-11 Michael Sogard Apparatus and method for containing debris from laser plasma radiation sources
US7217940B2 (en) * 2003-04-08 2007-05-15 Cymer, Inc. Collector for EUV light source
US7106832B2 (en) * 2005-01-10 2006-09-12 Asml Netherlands B.V. Apparatus including a radiation source, a filter system for filtering particles out of radiation emitted by the source, and a processing system for processing the radiation, a lithographic apparatus including such an apparatus, and a method of filtering particles out of radiation emitting and propagating from a radiation source
US7602472B2 (en) * 2007-06-12 2009-10-13 Asml Netherlands B.V. Contamination prevention system, lithographic apparatus, radiation source, and method for manufacturing a device
JP2009224182A (ja) * 2008-03-17 2009-10-01 Ushio Inc 極端紫外光光源装置
US8138487B2 (en) * 2009-04-09 2012-03-20 Cymer, Inc. System, method and apparatus for droplet catcher for prevention of backsplash in a EUV generation chamber
US9301382B2 (en) * 2013-12-02 2016-03-29 Asml Netherlands B.V. Apparatus for and method of source material delivery in a laser produced plasma EUV light source
US9625824B2 (en) * 2015-04-30 2017-04-18 Taiwan Semiconductor Manufacturing Company, Ltd Extreme ultraviolet lithography collector contamination reduction

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100085547A1 (en) * 2008-09-25 2010-04-08 Asml Netherlands B.V. Source module, radiation source and lithographic apparatus
WO2013189827A2 (fr) * 2012-06-22 2013-12-27 Asml Netherlands B.V. Source de rayonnement et appareil lithographique

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"Research Disclosure", RESEARCH DISCLOSURE, KENNETH MASON PUBLICATIONS, HAMPSHIRE, UK, GB, vol. 607, no. 25, 1 November 2014 (2014-11-01), pages 4, XP007143555, ISSN: 0374-4353, [retrieved on 20141016] *

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JP7366913B2 (ja) 2023-10-23
KR20200133740A (ko) 2020-11-30
JP2021516774A (ja) 2021-07-08
NL2022770A (en) 2019-10-02
CN111903195A (zh) 2020-11-06

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