JP7362431B2 - 成膜装置、ターゲットユニットの取り外し方法、及びターゲットユニットの取り付け方法 - Google Patents

成膜装置、ターゲットユニットの取り外し方法、及びターゲットユニットの取り付け方法 Download PDF

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JP7362431B2
JP7362431B2 JP2019199222A JP2019199222A JP7362431B2 JP 7362431 B2 JP7362431 B2 JP 7362431B2 JP 2019199222 A JP2019199222 A JP 2019199222A JP 2019199222 A JP2019199222 A JP 2019199222A JP 7362431 B2 JP7362431 B2 JP 7362431B2
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Prior art keywords
unit
target
support shaft
magnetic force
target unit
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JP2019199222A
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Japanese (ja)
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JP2021070852A (ja
Inventor
行生 松本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Tokki Corp
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Canon Tokki Corp
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Publication date
Application filed by Canon Tokki Corp filed Critical Canon Tokki Corp
Priority to JP2019199222A priority Critical patent/JP7362431B2/ja
Priority to KR1020200140477A priority patent/KR20210052301A/ko
Priority to CN202011190180.6A priority patent/CN112746252B/zh
Publication of JP2021070852A publication Critical patent/JP2021070852A/ja
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Publication of JP7362431B2 publication Critical patent/JP7362431B2/ja
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3414Targets
    • H01J37/3417Arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3414Targets
    • H01J37/3423Shape

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
JP2019199222A 2019-10-31 2019-10-31 成膜装置、ターゲットユニットの取り外し方法、及びターゲットユニットの取り付け方法 Active JP7362431B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2019199222A JP7362431B2 (ja) 2019-10-31 2019-10-31 成膜装置、ターゲットユニットの取り外し方法、及びターゲットユニットの取り付け方法
KR1020200140477A KR20210052301A (ko) 2019-10-31 2020-10-27 성막 장치, 타겟 유닛의 분리 방법, 및 타겟 유닛의 부착 방법
CN202011190180.6A CN112746252B (zh) 2019-10-31 2020-10-30 成膜装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019199222A JP7362431B2 (ja) 2019-10-31 2019-10-31 成膜装置、ターゲットユニットの取り外し方法、及びターゲットユニットの取り付け方法

Publications (2)

Publication Number Publication Date
JP2021070852A JP2021070852A (ja) 2021-05-06
JP7362431B2 true JP7362431B2 (ja) 2023-10-17

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JP2019199222A Active JP7362431B2 (ja) 2019-10-31 2019-10-31 成膜装置、ターゲットユニットの取り外し方法、及びターゲットユニットの取り付け方法

Country Status (3)

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JP (1) JP7362431B2 (ko)
KR (1) KR20210052301A (ko)
CN (1) CN112746252B (ko)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018131644A (ja) 2017-02-13 2018-08-23 株式会社アルバック スパッタリング装置用の回転式カソードユニット

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050224343A1 (en) * 2004-04-08 2005-10-13 Richard Newcomb Power coupling for high-power sputtering
US20060096855A1 (en) * 2004-11-05 2006-05-11 Richard Newcomb Cathode arrangement for atomizing a rotatable target pipe
DE102008033902B4 (de) * 2008-07-18 2012-01-19 Von Ardenne Anlagentechnik Gmbh Endblock für eine Magnetronanordnung mit einem rotierenden Target und Vakuumbeschichtungsanlage
US8182662B2 (en) * 2009-03-27 2012-05-22 Sputtering Components, Inc. Rotary cathode for magnetron sputtering apparatus
JP2014058698A (ja) * 2010-12-15 2014-04-03 Canon Anelva Corp スパッタリング装置
KR101441481B1 (ko) * 2012-09-11 2014-09-17 주식회사 에스에프에이 회전형 캐소드 및 이를 구비한 스퍼터 장치
JP6469432B2 (ja) 2014-12-09 2019-02-13 株式会社アルバック ロータリーカソード、および、スパッタ装置
JP6469434B2 (ja) * 2014-12-11 2019-02-13 株式会社アルバック ロータリーカソード、および、スパッタ装置
JP6580113B2 (ja) * 2017-12-05 2019-09-25 キヤノントッキ株式会社 スパッタ装置及びその制御方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018131644A (ja) 2017-02-13 2018-08-23 株式会社アルバック スパッタリング装置用の回転式カソードユニット

Also Published As

Publication number Publication date
KR20210052301A (ko) 2021-05-10
JP2021070852A (ja) 2021-05-06
CN112746252B (zh) 2023-08-11
CN112746252A (zh) 2021-05-04

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