JP7361506B2 - 撮像素子 - Google Patents

撮像素子 Download PDF

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Publication number
JP7361506B2
JP7361506B2 JP2019113922A JP2019113922A JP7361506B2 JP 7361506 B2 JP7361506 B2 JP 7361506B2 JP 2019113922 A JP2019113922 A JP 2019113922A JP 2019113922 A JP2019113922 A JP 2019113922A JP 7361506 B2 JP7361506 B2 JP 7361506B2
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Japan
Prior art keywords
pixel
region
avalanche multiplication
pixels
image sensor
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JP2019113922A
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Japanese (ja)
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JP2020017943A (ja
JP2020017943A5 (https=
Inventor
秀樹 池戸
寛和 小林
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to US16/507,342 priority Critical patent/US11089251B2/en
Priority to CN201910625386.8A priority patent/CN110719419B/zh
Publication of JP2020017943A publication Critical patent/JP2020017943A/ja
Publication of JP2020017943A5 publication Critical patent/JP2020017943A5/ja
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Publication of JP7361506B2 publication Critical patent/JP7361506B2/ja
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
JP2019113922A 2018-07-12 2019-06-19 撮像素子 Active JP7361506B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US16/507,342 US11089251B2 (en) 2018-07-12 2019-07-10 Image sensor and image capturing apparatus
CN201910625386.8A CN110719419B (zh) 2018-07-12 2019-07-11 图像传感器和摄像设备

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018132641 2018-07-12
JP2018132641 2018-07-12

Publications (3)

Publication Number Publication Date
JP2020017943A JP2020017943A (ja) 2020-01-30
JP2020017943A5 JP2020017943A5 (https=) 2022-06-20
JP7361506B2 true JP7361506B2 (ja) 2023-10-16

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ID=69581646

Family Applications (1)

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JP2019113922A Active JP7361506B2 (ja) 2018-07-12 2019-06-19 撮像素子

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JP (1) JP7361506B2 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020155514A (ja) * 2019-03-19 2020-09-24 ソニーセミコンダクタソリューションズ株式会社 センサチップ及び電子機器
JP7548777B2 (ja) * 2020-11-04 2024-09-10 浜松ホトニクス株式会社 光検出器、放射線検出器及びｐｅｔ装置
JP2022083067A (ja) * 2020-11-24 2022-06-03 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、および撮像装置、並びに電子機器
CN116457630A (zh) * 2020-12-02 2023-07-18 索尼半导体解决方案公司 光接收元件、光探测器和测距系统
JP7604204B2 (ja) * 2020-12-10 2024-12-23 キヤノン株式会社 光電変換装置、撮像システム、移動体
JP7653793B2 (ja) * 2021-01-22 2025-03-31 キヤノン株式会社 光電変換装置、光電変換システムおよび移動体

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013046973A1 (ja) 2011-09-29 2013-04-04 富士フイルム株式会社 固体撮像素子、撮像装置、及び合焦制御方法
WO2016013170A1 (ja) 2014-07-25 2016-01-28 パナソニックＩｐマネジメント株式会社 フォトダイオード、フォトダイオードアレイ、及び固体撮像素子

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013046973A1 (ja) 2011-09-29 2013-04-04 富士フイルム株式会社 固体撮像素子、撮像装置、及び合焦制御方法
WO2016013170A1 (ja) 2014-07-25 2016-01-28 パナソニックＩｐマネジメント株式会社 フォトダイオード、フォトダイオードアレイ、及び固体撮像素子

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JP2020017943A (ja) 2020-01-30

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