JP7359203B2 - 酸化ガリウム基板、および酸化ガリウム基板の製造方法 - Google Patents
酸化ガリウム基板、および酸化ガリウム基板の製造方法 Download PDFInfo
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- JP7359203B2 JP7359203B2 JP2021513541A JP2021513541A JP7359203B2 JP 7359203 B2 JP7359203 B2 JP 7359203B2 JP 2021513541 A JP2021513541 A JP 2021513541A JP 2021513541 A JP2021513541 A JP 2021513541A JP 7359203 B2 JP7359203 B2 JP 7359203B2
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- 239000000758 substrate Substances 0.000 title claims description 123
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 title claims description 116
- 229910001195 gallium oxide Inorganic materials 0.000 title claims description 116
- 238000000034 method Methods 0.000 title claims description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 238000005498 polishing Methods 0.000 claims description 169
- 239000002245 particle Substances 0.000 claims description 34
- 239000002002 slurry Substances 0.000 claims description 18
- 238000005259 measurement Methods 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 3
- 238000002296 dynamic light scattering Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 description 13
- 239000013078 crystal Substances 0.000 description 11
- 238000012546 transfer Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000008119 colloidal silica Substances 0.000 description 7
- 229910003460 diamond Inorganic materials 0.000 description 7
- 239000010432 diamond Substances 0.000 description 7
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 239000002612 dispersion medium Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/463—Mechanical treatment, e.g. grinding, ultrasonic treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G15/00—Compounds of gallium, indium or thallium
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/34—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being on the surface
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Ceramic Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
第1主表面と、前記第1主表面とは反対向きの第2主表面とを有する、酸化ガリウム基板であって、
前記第1主表面は、{001}面又は{001}面に対して所望のオフ角を有し、
前記第1主表面の最小二乗平面を基準面とする前記第1主表面の高低差の測定データz0(r,θ)を、下記式(1)のz(r,θ)で近似すると、
前記第2主表面を水平な平坦面に向かい合せて載置した時の、jが4、9、16、25、36、49、64、81である全てのanmznm(r,θ)を足した成分の第1最大高低差(PV1)を、前記第1主表面の直径(D)で割った値(PV1/D)が0.39×10-4以下であり、
前記第2主表面を平坦なチャック面に向い合せて全面吸着した時の、jが4以上81以下である全てのanmznm(r,θ)を足した成分の第2最大高低差(PV2)を、前記第1主表面の直径(D)で割った値(PV2/D)が0.59×10-4以下である。
例1~例3では、直径50.8mm、厚さ0.7mmのβ-Ga2O3単結晶基板に対して、図1に示すように一次片面研磨(S1)、二次片面研磨(S2)、および両面研磨(S3)を同一の条件で実施した。
例4~例6では、直径50.8mm、厚さ0.7mmのβ-Ga2O3単結晶基板に対して、一次片面研磨(S1)および二次片面研磨(S2)のみを、例1~例3と同一の条件で実施した。例4~例6では、両面研磨(S3)は実施しなかった。
例7では、両面研磨(S3)の粒子として粒径0.5μmのダイヤモンド粒子を用い、ダイヤモンド粒子用の研磨パッドとしてエポキシ樹脂製のものを用いた以外、例1~例3と同一の条件で一次片面研磨(S1)、二次片面研磨(S2)および両面研磨(S3)を実施した。その結果、両面研磨(S3)中に酸化ガリウム基板10が割れてしまった。
第1主表面11である(001)面の第1最大高低差(PV1)は、図6に示すように酸化ガリウム基板10を変形しないように、第2主表面12である(00-1)面を水平な平坦面20に向い合せて載置した状態で測定した。測定装置として、三鷹光器製の商品名PF-60を用いた。
11 第1主表面
12 第2主表面
Claims (5)
- 第1主表面と、前記第1主表面とは反対向きの第2主表面とを有する、酸化ガリウム基板であって、
前記第1主表面は、{001}面又は{001}面に対して所望のオフ角を有し、
前記第1主表面の最小二乗平面を基準面とする前記第1主表面の高低差の測定データz0(r,θ)を、下記式(1)のz(r,θ)で近似すると、
前記第2主表面を水平な平坦面に向かい合せて載置した時の、jが4、9、16、25、36、49、64、81である全てのanmznm(r,θ)を足した成分の第1最大高低差(PV1)を、前記第1主表面の直径(D)で割った値(PV1/D)が0.39×10-4以下であり、
前記第2主表面を平坦なチャック面に向い合せて全面吸着した時の、jが4以上81以下である全てのanmznm(r,θ)を足した成分の第2最大高低差(PV2)を、前記第1主表面の直径(D)で割った値(PV2/D)が0.59×10-4以下である、酸化ガリウム基板。
- 前記第1最大高低差(PV1)が2μm以下であり、
前記第2最大高低差(PV2)が3μm以下である、請求項1に記載の酸化ガリウム基板。 - 第1主表面と、前記第1主表面とは反対向きの第2主表面とを有する、酸化ガリウム基板の製造方法であって、
前記第1主表面は、{001}面又は{001}面に対して所望のオフ角を有し、
前記製造方法は、モース硬度が7以下である粒子を含む研磨スラリーによって、前記第1主表面と前記第2主表面とを同時に研磨することを含む、酸化ガリウム基板の製造方法。 - 前記研磨スラリーに含まれる前記粒子の動的光散乱法で測定した粒子径分布における体積基準の積算分率の50%径が、1μm以下である、請求項3に記載の酸化ガリウム基板の製造方法。
- 前記第1主表面と前記第2主表面とを同時に研磨する時間の前半期の50%以上で、研磨圧が9.8kPa以下である、請求項3または4に記載の酸化ガリウム基板の製造方法。
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PCT/JP2020/011995 WO2020209022A1 (ja) | 2019-04-08 | 2020-03-18 | 酸化ガリウム基板、および酸化ガリウム基板の製造方法 |
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US (1) | US20220028700A1 (ja) |
JP (1) | JP7359203B2 (ja) |
KR (1) | KR20210146307A (ja) |
CN (1) | CN113646470A (ja) |
TW (1) | TW202037453A (ja) |
WO (1) | WO2020209022A1 (ja) |
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JP7083139B1 (ja) * | 2021-08-06 | 2022-06-10 | 株式会社タムラ製作所 | 半導体基板、半導体ウエハ、及び半導体ウエハの製造方法 |
CN114523463B (zh) * | 2022-02-17 | 2023-08-25 | 清华大学 | 一种分布式极坐标定位抓取系统 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008105883A (ja) | 2006-10-24 | 2008-05-08 | Nippon Light Metal Co Ltd | 酸化ガリウム単結晶基板及びその製造方法 |
JP2014024960A (ja) | 2012-07-26 | 2014-02-06 | Fujimi Inc | 研磨用組成物、酸化物材料の研磨方法及び酸化物材料基板の製造方法 |
JP2016013932A (ja) | 2014-06-30 | 2016-01-28 | 株式会社タムラ製作所 | Ga2O3系単結晶基板 |
WO2019188747A1 (ja) | 2018-03-28 | 2019-10-03 | 株式会社フジミインコーポレーテッド | ガリウム化合物系半導体基板研磨用組成物 |
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WO2001050084A1 (en) * | 1999-12-30 | 2001-07-12 | Ade Corporation | Specimen topography reconstruction |
US9430593B2 (en) * | 2012-10-11 | 2016-08-30 | Kla-Tencor Corporation | System and method to emulate finite element model based prediction of in-plane distortions due to semiconductor wafer chucking |
CN106711032B (zh) * | 2016-12-09 | 2019-03-29 | 盐城工学院 | 适用于硬脆易解理单晶氧化镓晶片的高效低损伤研磨方法 |
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- 2020-03-18 JP JP2021513541A patent/JP7359203B2/ja active Active
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- 2020-03-18 KR KR1020217031454A patent/KR20210146307A/ko not_active Application Discontinuation
- 2020-03-18 WO PCT/JP2020/011995 patent/WO2020209022A1/ja active Application Filing
- 2020-03-23 TW TW109109552A patent/TW202037453A/zh unknown
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008105883A (ja) | 2006-10-24 | 2008-05-08 | Nippon Light Metal Co Ltd | 酸化ガリウム単結晶基板及びその製造方法 |
JP2014024960A (ja) | 2012-07-26 | 2014-02-06 | Fujimi Inc | 研磨用組成物、酸化物材料の研磨方法及び酸化物材料基板の製造方法 |
JP2016013932A (ja) | 2014-06-30 | 2016-01-28 | 株式会社タムラ製作所 | Ga2O3系単結晶基板 |
WO2019188747A1 (ja) | 2018-03-28 | 2019-10-03 | 株式会社フジミインコーポレーテッド | ガリウム化合物系半導体基板研磨用組成物 |
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CN113646470A (zh) | 2021-11-12 |
TW202037453A (zh) | 2020-10-16 |
US20220028700A1 (en) | 2022-01-27 |
KR20210146307A (ko) | 2021-12-03 |
WO2020209022A1 (ja) | 2020-10-15 |
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