JP7358410B2 - 光電変換装置及び光検出システム - Google Patents

光電変換装置及び光検出システム Download PDF

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Publication number
JP7358410B2
JP7358410B2 JP2021008658A JP2021008658A JP7358410B2 JP 7358410 B2 JP7358410 B2 JP 7358410B2 JP 2021008658 A JP2021008658 A JP 2021008658A JP 2021008658 A JP2021008658 A JP 2021008658A JP 7358410 B2 JP7358410 B2 JP 7358410B2
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Prior art keywords
signal
photoelectric conversion
conversion device
transistor
pixel
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JP2021008658A
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Japanese (ja)
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JP2022112740A5 (https=
JP2022112740A (ja
Inventor
康晴 大田
知弥 笹子
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2021008658A priority Critical patent/JP7358410B2/ja
Priority to US17/580,135 priority patent/US12177588B2/en
Publication of JP2022112740A publication Critical patent/JP2022112740A/ja
Publication of JP2022112740A5 publication Critical patent/JP2022112740A5/ja
Application granted granted Critical
Publication of JP7358410B2 publication Critical patent/JP7358410B2/ja
Priority to US18/943,252 priority patent/US20250142229A1/en
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/779—Circuitry for scanning or addressing the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2021008658A 2021-01-22 2021-01-22 光電変換装置及び光検出システム Active JP7358410B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2021008658A JP7358410B2 (ja) 2021-01-22 2021-01-22 光電変換装置及び光検出システム
US17/580,135 US12177588B2 (en) 2021-01-22 2022-01-20 Photoelectric conversion device and photodetection system having avalanche diode
US18/943,252 US20250142229A1 (en) 2021-01-22 2024-11-11 Photoelectric conversion device and photodetection system having avalanche diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021008658A JP7358410B2 (ja) 2021-01-22 2021-01-22 光電変換装置及び光検出システム

Publications (3)

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JP2022112740A JP2022112740A (ja) 2022-08-03
JP2022112740A5 JP2022112740A5 (https=) 2023-03-13
JP7358410B2 true JP7358410B2 (ja) 2023-10-10

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JP2021008658A Active JP7358410B2 (ja) 2021-01-22 2021-01-22 光電変換装置及び光検出システム

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US (2) US12177588B2 (https=)
JP (1) JP7358410B2 (https=)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015084092A (ja) 2013-09-19 2015-04-30 株式会社半導体エネルギー研究所 発光装置、電子機器、および、それらの駆動方法
JP2019140524A (ja) 2018-02-09 2019-08-22 キヤノン株式会社 光電変換装置及び撮像システム
JP2020088535A (ja) 2018-11-21 2020-06-04 キヤノン株式会社 撮像装置および撮像装置の制御方法
JP2020123847A (ja) 2019-01-30 2020-08-13 キヤノン株式会社 光電変換装置、撮像システム、移動体
JP2020182026A (ja) 2019-04-23 2020-11-05 キヤノン株式会社 撮像装置およびその制御方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7039552B2 (ja) * 2017-03-03 2022-03-22 ソニーセミコンダクタソリューションズ株式会社 半導体装置および半導体装置の製造方法並びに電子機器
US10397554B2 (en) * 2017-05-16 2019-08-27 Samsung Electronics Co., Ltd. Time-resolving sensor using shared PPD+SPAD pixel and spatial-temporal correlation for range measurement
EP3451655B1 (en) * 2017-08-31 2020-10-21 Canon Kabushiki Kaisha Solid-state image sensor and image capture apparatus
JP2019158806A (ja) 2018-03-16 2019-09-19 ソニーセミコンダクタソリューションズ株式会社 受光装置及び測距装置
US11108980B2 (en) * 2019-02-04 2021-08-31 Semiconductor Components Industries, Llc Semiconductor devices with single-photon avalanche diode pixels

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015084092A (ja) 2013-09-19 2015-04-30 株式会社半導体エネルギー研究所 発光装置、電子機器、および、それらの駆動方法
JP2019140524A (ja) 2018-02-09 2019-08-22 キヤノン株式会社 光電変換装置及び撮像システム
JP2020088535A (ja) 2018-11-21 2020-06-04 キヤノン株式会社 撮像装置および撮像装置の制御方法
JP2020123847A (ja) 2019-01-30 2020-08-13 キヤノン株式会社 光電変換装置、撮像システム、移動体
JP2020182026A (ja) 2019-04-23 2020-11-05 キヤノン株式会社 撮像装置およびその制御方法

Also Published As

Publication number Publication date
US20250142229A1 (en) 2025-05-01
US20220239857A1 (en) 2022-07-28
JP2022112740A (ja) 2022-08-03
US12177588B2 (en) 2024-12-24

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