JP2022112740A5 - - Google Patents

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Publication number
JP2022112740A5
JP2022112740A5 JP2021008658A JP2021008658A JP2022112740A5 JP 2022112740 A5 JP2022112740 A5 JP 2022112740A5 JP 2021008658 A JP2021008658 A JP 2021008658A JP 2021008658 A JP2021008658 A JP 2021008658A JP 2022112740 A5 JP2022112740 A5 JP 2022112740A5
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JP
Japan
Prior art keywords
signal
photoelectric conversion
conversion device
transistor
circuit
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JP2021008658A
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English (en)
Japanese (ja)
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JP7358410B2 (ja
JP2022112740A (ja
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Priority to JP2021008658A priority Critical patent/JP7358410B2/ja
Priority claimed from JP2021008658A external-priority patent/JP7358410B2/ja
Priority to US17/580,135 priority patent/US12177588B2/en
Publication of JP2022112740A publication Critical patent/JP2022112740A/ja
Publication of JP2022112740A5 publication Critical patent/JP2022112740A5/ja
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Publication of JP7358410B2 publication Critical patent/JP7358410B2/ja
Priority to US18/943,252 priority patent/US20250142229A1/en
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JP2021008658A 2021-01-22 2021-01-22 光電変換装置及び光検出システム Active JP7358410B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2021008658A JP7358410B2 (ja) 2021-01-22 2021-01-22 光電変換装置及び光検出システム
US17/580,135 US12177588B2 (en) 2021-01-22 2022-01-20 Photoelectric conversion device and photodetection system having avalanche diode
US18/943,252 US20250142229A1 (en) 2021-01-22 2024-11-11 Photoelectric conversion device and photodetection system having avalanche diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021008658A JP7358410B2 (ja) 2021-01-22 2021-01-22 光電変換装置及び光検出システム

Publications (3)

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JP2022112740A JP2022112740A (ja) 2022-08-03
JP2022112740A5 true JP2022112740A5 (https=) 2023-03-13
JP7358410B2 JP7358410B2 (ja) 2023-10-10

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JP2021008658A Active JP7358410B2 (ja) 2021-01-22 2021-01-22 光電変換装置及び光検出システム

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US (2) US12177588B2 (https=)
JP (1) JP7358410B2 (https=)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6562608B2 (ja) 2013-09-19 2019-08-21 株式会社半導体エネルギー研究所 電子機器、及び電子機器の駆動方法
JP7039552B2 (ja) * 2017-03-03 2022-03-22 ソニーセミコンダクタソリューションズ株式会社 半導体装置および半導体装置の製造方法並びに電子機器
US10397554B2 (en) * 2017-05-16 2019-08-27 Samsung Electronics Co., Ltd. Time-resolving sensor using shared PPD+SPAD pixel and spatial-temporal correlation for range measurement
EP3451655B1 (en) * 2017-08-31 2020-10-21 Canon Kabushiki Kaisha Solid-state image sensor and image capture apparatus
JP7039310B2 (ja) 2018-02-09 2022-03-22 キヤノン株式会社 光電変換装置及び撮像システム
JP2019158806A (ja) 2018-03-16 2019-09-19 ソニーセミコンダクタソリューションズ株式会社 受光装置及び測距装置
JP7289635B2 (ja) 2018-11-21 2023-06-12 キヤノン株式会社 撮像装置および撮像装置の制御方法
JP7321713B2 (ja) 2019-01-30 2023-08-07 キヤノン株式会社 光電変換装置、撮像システム、移動体
US11108980B2 (en) * 2019-02-04 2021-08-31 Semiconductor Components Industries, Llc Semiconductor devices with single-photon avalanche diode pixels
JP7277242B2 (ja) 2019-04-23 2023-05-18 キヤノン株式会社 撮像装置およびその制御方法

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