JP7346538B2 - 半導体デバイスのための相互接続構造を製造するための方法 - Google Patents
半導体デバイスのための相互接続構造を製造するための方法 Download PDFInfo
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- JP7346538B2 JP7346538B2 JP2021501049A JP2021501049A JP7346538B2 JP 7346538 B2 JP7346538 B2 JP 7346538B2 JP 2021501049 A JP2021501049 A JP 2021501049A JP 2021501049 A JP2021501049 A JP 2021501049A JP 7346538 B2 JP7346538 B2 JP 7346538B2
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- layer
- ruthenium
- titanium nitride
- etching
- pattern
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- 238000000034 method Methods 0.000 title claims description 165
- 239000004065 semiconductor Substances 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title description 4
- 238000005530 etching Methods 0.000 claims description 110
- 239000000758 substrate Substances 0.000 claims description 82
- 239000007789 gas Substances 0.000 claims description 63
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 59
- 229910052707 ruthenium Inorganic materials 0.000 claims description 59
- 238000012545 processing Methods 0.000 claims description 51
- 239000001301 oxygen Substances 0.000 claims description 48
- 229910052760 oxygen Inorganic materials 0.000 claims description 48
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 47
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 43
- 239000000460 chlorine Substances 0.000 claims description 31
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 21
- 229910052801 chlorine Inorganic materials 0.000 claims description 21
- 238000004380 ashing Methods 0.000 claims description 17
- 238000001636 atomic emission spectroscopy Methods 0.000 claims description 13
- 238000000059 patterning Methods 0.000 claims description 9
- 230000007423 decrease Effects 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 223
- 229910052751 metal Inorganic materials 0.000 description 58
- 239000002184 metal Substances 0.000 description 58
- 238000001020 plasma etching Methods 0.000 description 26
- 229920002120 photoresistant polymer Polymers 0.000 description 24
- 238000012546 transfer Methods 0.000 description 20
- 239000000463 material Substances 0.000 description 19
- 239000000203 mixture Substances 0.000 description 19
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 15
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 11
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000009977 dual effect Effects 0.000 description 5
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000005086 pumping Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 3
- RJVFYCGALODNGZ-UHFFFAOYSA-M [F-].[O-2].[Ti+3] Chemical compound [F-].[O-2].[Ti+3] RJVFYCGALODNGZ-UHFFFAOYSA-M 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000005070 sampling Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- XROWMBWRMNHXMF-UHFFFAOYSA-J titanium tetrafluoride Chemical compound [F-].[F-].[F-].[F-].[Ti+4] XROWMBWRMNHXMF-UHFFFAOYSA-J 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical class O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- USEGOPGXFRQEMV-UHFFFAOYSA-N fluoro hypofluorite titanium Chemical compound [Ti].FOF USEGOPGXFRQEMV-UHFFFAOYSA-N 0.000 description 1
- 239000013529 heat transfer fluid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
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- 238000010926 purge Methods 0.000 description 1
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- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- C—CHEMISTRY; METALLURGY
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Description
Claims (6)
- 半導体処理のための方法であって、
基板の上にルテニウム層を形成することと、
前記ルテニウム層の上に第1の窒化チタン層を形成することと、
前記第1の窒化チタン層の上にハードマスク層を形成することと、
前記ハードマスク層を第1のパターンへとパターニングすることと、
前記第1のパターンを前記第1の窒化チタン層へと転写することであって、前記第1の窒化チタン層をエッチングすることを含む、前記第1のパターンを前記第1の窒化チタン層へと転写することと、
前記第1のパターンを前記第1の窒化チタン層へと転写した後、前記ハードマスク層を除去することであって、酸素含有アッシング処理を実行することを含む、前記ハードマスク層を除去することと、
前記ハードマスク層を除去した後、前記第1のパターンを前記ルテニウム層へと転写することであって、前記ルテニウム層をエッチングすることを含む、前記第1のパターンを前記ルテニウム層へと転写すること
を含む方法。 - 前記ルテニウム層をエッチングすることが、酸素及び塩素を含む混合ガスを前記ルテニウム層へと供給することを含み、(i)前記酸素の流量の、(ii)前記酸素の流量と前記塩素の流量とを足した流量に対する比率が、82%から95%の範囲内である、請求項1に記載の方法。
- 前記基板の上に第2の窒化チタン層を形成することであって、前記ルテニウム層が、当該第2の窒化チタン層の上に形成される、第2の窒化チタン層を形成することと、
前記第1の窒化チタン層の上に酸化物層を形成することであって、前記ハードマスク層が、当該酸化物層の上に形成される、酸化物層を形成することと、
前記第1のパターンを前記酸化物層へと転写すること
をさらに含み、前記ルテニウム層をエッチングすることが、窒化チタンに対するルテニウムのエッチング選択比が50よりも大きく、酸化物に対するルテニウムのエッチング選択比が30よりも大きいエッチング処理を使用することを含む、請求項1に記載の方法。 - 前記ルテニウム層をエッチングすることが、
第1の時間において、前記ルテニウム層に供給されるエッチング処理ガスの流動を開始することと、
発光分光分析法を使用して、第2の時間における終止点を決定することであって、当該終止点が、検出された光信号の減少に基づいて決定される、第2の時間における終止点を決定することと、
前記第2の時間の後、オーバーエッチ期間にわたって前記エッチング処理ガスの流動を継続することであって、当該オーバーエッチ期間が、前記第1の時間から前記第2の時間までの時間幅の10%から100%の範囲内である、オーバーエッチ期間にわたって前記エッチング処理ガスの流動を継続することと、
前記オーバーエッチ期間の終結において前記エッチング処理ガスの流動を終了させること
を含む、請求項1に記載の方法。 - 前記第1のパターンを前記ルテニウム層へと転写することが、垂直側壁を有するプロファイルを有するルテニウムパターンを形成する、請求項1に記載の方法。
- 半導体処理のための方法であって、
基板の上に第1のルテニウム層を形成することと、
前記第1のルテニウム層の上に第1の窒化チタン層を形成することと、
前記第1の窒化チタン層の上に第2のルテニウム層を形成することと、
前記第2のルテニウム層の上に第2の窒化チタン層を形成することと、
前記第2の窒化チタン層の上にハードマスク層を形成することと、
前記ハードマスク層をラインパターンへとパターニングすることと、
前記ラインパターンを前記第2の窒化チタン層へと転写することであって、前記第2の窒化チタン層をエッチングすることを含む、前記ラインパターンを前記第2の窒化チタン層へと転写することと、
前記ラインパターンを前記第2の窒化チタン層へと転写した後、前記ハードマスク層を除去することであって、酸素含有アッシング処理を実行することを含む、前記ハードマスク層を除去することと、
前記ハードマスク層を除去した後、前記ラインパターンを前記第2のルテニウム層へと転写することと、
前記第2の窒化チタン層をビアパターンへとパターニングすること、及び前記ラインパターンを前記第1の窒化チタン層へと転写することを同時に行うことと、
前記ビアパターンを前記第2のルテニウム層へと転写してビアを形成すること、及び前記ラインパターンを前記第1のルテニウム層へと転写してラインを形成することを同時に行うことと、
前記ライン及び前記ビアの上に誘電体層を形成すること
を含む方法。
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JP2023145505A (ja) | 2023-10-11 |
KR20210021600A (ko) | 2021-02-26 |
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