JP7341141B2 - 撮像装置および電子機器 - Google Patents

撮像装置および電子機器 Download PDF

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JP7341141B2
JP7341141B2 JP2020533431A JP2020533431A JP7341141B2 JP 7341141 B2 JP7341141 B2 JP 7341141B2 JP 2020533431 A JP2020533431 A JP 2020533431A JP 2020533431 A JP2020533431 A JP 2020533431A JP 7341141 B2 JP7341141 B2 JP 7341141B2
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trench gate
imaging device
transfer destination
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JPWO2020026856A1 (ja
JPWO2020026856A5 (https=
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貴志 町田
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/779—Circuitry for scanning or addressing the pixel array
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2020533431A 2018-07-31 2019-07-19 撮像装置および電子機器 Active JP7341141B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023133344A JP7615246B2 (ja) 2018-07-31 2023-08-18 撮像装置および電子機器

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018143491 2018-07-31
JP2018143491 2018-07-31
PCT/JP2019/028494 WO2020026856A1 (ja) 2018-07-31 2019-07-19 撮像装置および電子機器

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JPWO2020026856A1 JPWO2020026856A1 (ja) 2021-08-12
JPWO2020026856A5 JPWO2020026856A5 (https=) 2022-06-16
JP7341141B2 true JP7341141B2 (ja) 2023-09-08

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US (4) US11482550B2 (https=)
EP (3) EP4503642A3 (https=)
JP (2) JP7341141B2 (https=)
KR (1) KR102679749B1 (https=)
CN (1) CN112534579B (https=)
DE (1) DE112019003845T5 (https=)
TW (1) TWI840384B (https=)
WO (1) WO2020026856A1 (https=)

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TWI840384B (zh) * 2018-07-31 2024-05-01 日商索尼半導體解決方案公司 攝像裝置及電子機器
JP2020035916A (ja) * 2018-08-30 2020-03-05 ソニーセミコンダクタソリューションズ株式会社 撮像装置および電子機器
US11527563B2 (en) * 2020-04-20 2022-12-13 Taiwan Semiconductor Manufacturing Company Limited Photodetector using a buried gate electrode for a transfer transistor and methods of manufacturing the same
US12316987B2 (en) 2020-05-20 2025-05-27 Sony Semiconductor Solutions Corporation Solid-state imaging device
US11948965B2 (en) * 2021-04-01 2024-04-02 Omnivision Technologies, Inc. Uneven-trench pixel cell and fabrication method
JP2023157511A (ja) * 2022-04-15 2023-10-26 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器
TW202433740A (zh) * 2023-01-20 2024-08-16 日商索尼半導體解決方案公司 半導體裝置
JP2024146132A (ja) * 2023-03-31 2024-10-15 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器
TW202445845A (zh) * 2023-05-10 2024-11-16 日商索尼半導體解決方案公司 半導體裝置
CN121844730A (zh) * 2023-10-17 2026-04-10 索尼半导体解决方案公司 光电检测装置和电子设备
WO2025197384A1 (ja) * 2024-03-18 2025-09-25 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器

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JP2015082592A (ja) 2013-10-23 2015-04-27 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
JP2016136584A (ja) 2015-01-23 2016-07-28 株式会社東芝 固体撮像装置および固体撮像装置の製造方法
WO2017183477A1 (ja) 2016-04-22 2017-10-26 ソニー株式会社 固体撮像素子および駆動方法、並びに電子機器

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CA2682662A1 (en) * 2007-03-30 2008-10-16 Panasonic Electric Works Co., Ltd. Image pickup device, spatial information detecting apparatus using the same device and method for taking out received-light output from the same device
US8009215B2 (en) * 2008-07-16 2011-08-30 International Business Machines Corporation Pixel sensor cell with frame storage capability
JP2011159756A (ja) * 2010-01-29 2011-08-18 Sony Corp 固体撮像装置とその製造方法、及び電子機器
JP2013084785A (ja) 2011-10-11 2013-05-09 Sony Corp 固体撮像装置、撮像装置
WO2013094430A1 (ja) * 2011-12-19 2013-06-27 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法、および電子機器
JP5573978B2 (ja) * 2012-02-09 2014-08-20 株式会社デンソー 固体撮像素子およびその駆動方法
US9659981B2 (en) * 2012-04-25 2017-05-23 Taiwan Semiconductor Manufacturing Co., Ltd. Backside illuminated image sensor with negatively charged layer
KR20140111492A (ko) * 2013-03-11 2014-09-19 삼성전자주식회사 반도체 장치
WO2014141900A1 (ja) * 2013-03-14 2014-09-18 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
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FR3052297A1 (fr) * 2016-06-06 2017-12-08 St Microelectronics Crolles 2 Sas Capteur d'image de type a obturation globale
FR3052296A1 (fr) * 2016-06-06 2017-12-08 St Microelectronics Crolles 2 Sas Capteur d'image de type a obturation globale
JP2018143491A (ja) 2017-03-06 2018-09-20 株式会社サンセイアールアンドディ 遊技機
JP2018190797A (ja) * 2017-04-28 2018-11-29 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器
TWI840384B (zh) 2018-07-31 2024-05-01 日商索尼半導體解決方案公司 攝像裝置及電子機器

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JP2015053411A (ja) 2013-09-09 2015-03-19 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法、および電子機器
JP2015082592A (ja) 2013-10-23 2015-04-27 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
JP2016136584A (ja) 2015-01-23 2016-07-28 株式会社東芝 固体撮像装置および固体撮像装置の製造方法
WO2017183477A1 (ja) 2016-04-22 2017-10-26 ソニー株式会社 固体撮像素子および駆動方法、並びに電子機器

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EP3832726A1 (en) 2021-06-09
US20240021633A1 (en) 2024-01-18
EP4246990A3 (en) 2023-10-11
EP4503642A2 (en) 2025-02-05
DE112019003845T5 (de) 2021-05-06
KR102679749B1 (ko) 2024-07-01
EP4246990A2 (en) 2023-09-20
TWI840384B (zh) 2024-05-01
JPWO2020026856A1 (ja) 2021-08-12
US20250081646A1 (en) 2025-03-06
US20220375976A1 (en) 2022-11-24
US12230654B2 (en) 2025-02-18
EP3832726B1 (en) 2023-11-01
EP3832726A4 (en) 2021-08-25
US20210320135A1 (en) 2021-10-14
TW202017163A (zh) 2020-05-01
EP4503642A3 (en) 2025-04-16
CN112534579A (zh) 2021-03-19
JP2023155306A (ja) 2023-10-20
CN112534579B (zh) 2024-11-19
JP7615246B2 (ja) 2025-01-16
US11482550B2 (en) 2022-10-25
KR20210033986A (ko) 2021-03-29
WO2020026856A1 (ja) 2020-02-06
EP4246990B1 (en) 2025-02-12
US11923387B2 (en) 2024-03-05

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