JP7335896B2 - 半導体ウエハ質量計測装置および半導体ウエハ質量計測方法 - Google Patents

半導体ウエハ質量計測装置および半導体ウエハ質量計測方法 Download PDF

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JP7335896B2
JP7335896B2 JP2020555869A JP2020555869A JP7335896B2 JP 7335896 B2 JP7335896 B2 JP 7335896B2 JP 2020555869 A JP2020555869 A JP 2020555869A JP 2020555869 A JP2020555869 A JP 2020555869A JP 7335896 B2 JP7335896 B2 JP 7335896B2
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semiconductor wafer
temperature
mass
heat transfer
transfer plate
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Japanese (ja)
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JP2021521441A5 (https=
JP2021521441A (ja
JPWO2019201603A5 (https=
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エリオット・グレガー
トニス・エリック
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Metryx Ltd
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Metryx Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604Process monitoring, e.g. flow or thickness monitoring
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602Temperature monitoring
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N25/00Investigating or analyzing materials by the use of thermal means
    • G01N25/72Investigating presence of flaws
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0432Apparatus for thermal treatment mainly by conduction
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0434Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3306Horizontal transfer of a single workpiece

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2020555869A 2018-04-19 2019-04-03 半導体ウエハ質量計測装置および半導体ウエハ質量計測方法 Active JP7335896B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB1806377.6A GB201806377D0 (en) 2018-04-19 2018-04-19 Semiconductor wafer mass metrology apparatus and semiconductor wafer mass metrology method
GB1806377.6 2018-04-19
PCT/EP2019/058388 WO2019201603A1 (en) 2018-04-19 2019-04-03 Semiconductor wafer mass metrology apparatus and semiconductor wafer mass metrology method

Publications (4)

Publication Number Publication Date
JP2021521441A JP2021521441A (ja) 2021-08-26
JP2021521441A5 JP2021521441A5 (https=) 2022-04-11
JPWO2019201603A5 JPWO2019201603A5 (https=) 2022-04-11
JP7335896B2 true JP7335896B2 (ja) 2023-08-30

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ID=62236133

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JP2020555869A Active JP7335896B2 (ja) 2018-04-19 2019-04-03 半導体ウエハ質量計測装置および半導体ウエハ質量計測方法

Country Status (9)

Country Link
US (1) US12288702B2 (https=)
EP (1) EP3782188B1 (https=)
JP (1) JP7335896B2 (https=)
KR (3) KR102547839B1 (https=)
CN (1) CN112368814B (https=)
GB (1) GB201806377D0 (https=)
SG (1) SG11202010143VA (https=)
TW (1) TWI822759B (https=)
WO (1) WO2019201603A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201815815D0 (en) * 2018-09-28 2018-11-14 Metryx Ltd Method and apparatus for controlling the temperature of a semiconductor wafer
CN113496912B (zh) * 2020-04-02 2023-10-17 长鑫存储技术有限公司 监测晶圆及监测系统
CN113819985A (zh) * 2020-06-18 2021-12-21 拓荆科技股份有限公司 晶圆防干扰称重装置及其应用
CN116417319A (zh) * 2021-12-30 2023-07-11 中微半导体设备(上海)股份有限公司 一种控温装置及相应的等离子体处理器
KR102706137B1 (ko) * 2022-06-14 2024-09-13 주식회사 코비스테크놀로지 병렬구조의 질량측정장치를 이용한 질량측정방법
GB202414501D0 (en) * 2024-10-02 2024-11-13 Metryx Ltd Method and apparatus for controlling the temperature of a wafer

Citations (2)

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US20060286807A1 (en) 2005-06-16 2006-12-21 Jack Hwang Use of active temperature control to provide emmisivity independent wafer temperature
JP2017507474A (ja) 2013-12-04 2017-03-16 メトリックス・リミテッドMetryx Limited 半導体ウェハ処理方法および装置

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US6072163A (en) * 1998-03-05 2000-06-06 Fsi International Inc. Combination bake/chill apparatus incorporating low thermal mass, thermally conductive bakeplate
KR100342754B1 (ko) 1999-11-10 2002-07-04 황인길 무게 측정을 통한 반도체 웨이퍼의 정렬 시스템
GB0016562D0 (en) 2000-07-05 2000-08-23 Metryx Limited Apparatus and method for investigating semiconductor wafers
US6790376B1 (en) * 2001-07-23 2004-09-14 Advanced Micro Devices, Inc. Process control based upon weight or mass measurements, and systems for accomplishing same
CN1702849A (zh) * 2004-05-26 2005-11-30 松下电器产业株式会社 温度异常检测方法及半导体制造装置
US20060004493A1 (en) * 2004-06-30 2006-01-05 Jack Hwang Use of active temperature control to provide emmisivity independent wafer temperature
KR20060118747A (ko) * 2005-05-17 2006-11-24 삼성전자주식회사 온도 조절 어셈블리 및 이를 갖는 이온 주입 장치
US7534627B2 (en) * 2006-08-07 2009-05-19 Sokudo Co., Ltd. Methods and systems for controlling critical dimensions in track lithography tools
US7935942B2 (en) * 2006-08-15 2011-05-03 Varian Semiconductor Equipment Associates, Inc. Technique for low-temperature ion implantation
GB0719469D0 (en) 2007-10-04 2007-11-14 Metryx Ltd Measurement apparatus and method
GB0719460D0 (en) 2007-10-04 2007-11-14 Metryx Ltd Measurement apparatus and method
DE102008041250A1 (de) 2008-08-13 2010-02-25 Ers Electronic Gmbh Verfahren und Vorrichtung zum thermischen Bearbeiten von Kunststoffscheiben, insbesondere Moldwafern
US9111971B2 (en) * 2012-07-30 2015-08-18 Applied Materials Israel, Ltd. System and method for temperature control of a semiconductor wafer
GB201315715D0 (en) * 2013-09-04 2013-10-16 Metryx Ltd Method and device for determining information relating to the mass of a semiconductor wafer
WO2015169616A1 (en) * 2014-05-06 2015-11-12 Asml Netherlands B.V. Substrate support, method for loading a substrate on a substrate support location, lithographic apparatus and device manufacturing method
US20150332942A1 (en) 2014-05-16 2015-11-19 Eng Sheng Peh Pedestal fluid-based thermal control
US10430719B2 (en) * 2014-11-25 2019-10-01 Stream Mosaic, Inc. Process control techniques for semiconductor manufacturing processes
US10269682B2 (en) 2015-10-09 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Cooling devices, packaged semiconductor devices, and methods of packaging semiconductor devices
GB201815815D0 (en) * 2018-09-28 2018-11-14 Metryx Ltd Method and apparatus for controlling the temperature of a semiconductor wafer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060286807A1 (en) 2005-06-16 2006-12-21 Jack Hwang Use of active temperature control to provide emmisivity independent wafer temperature
JP2017507474A (ja) 2013-12-04 2017-03-16 メトリックス・リミテッドMetryx Limited 半導体ウェハ処理方法および装置

Also Published As

Publication number Publication date
JP2021521441A (ja) 2021-08-26
CN112368814A (zh) 2021-02-12
WO2019201603A1 (en) 2019-10-24
TWI822759B (zh) 2023-11-21
KR102902474B1 (ko) 2025-12-18
KR102547839B1 (ko) 2023-06-23
KR20260003408A (ko) 2026-01-06
KR20230098696A (ko) 2023-07-04
KR20200143480A (ko) 2020-12-23
EP3782188A1 (en) 2021-02-24
CN112368814B (zh) 2025-02-28
EP3782188B1 (en) 2023-06-21
US20210175102A1 (en) 2021-06-10
US12288702B2 (en) 2025-04-29
SG11202010143VA (en) 2020-11-27
TW202002125A (zh) 2020-01-01
GB201806377D0 (en) 2018-06-06

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