CN112368814B - 半导体晶片质量计量装置和半导体晶片质量计量方法 - Google Patents

半导体晶片质量计量装置和半导体晶片质量计量方法 Download PDF

Info

Publication number
CN112368814B
CN112368814B CN201980026826.6A CN201980026826A CN112368814B CN 112368814 B CN112368814 B CN 112368814B CN 201980026826 A CN201980026826 A CN 201980026826A CN 112368814 B CN112368814 B CN 112368814B
Authority
CN
China
Prior art keywords
temperature
semiconductor wafer
transfer plate
heat transfer
quality
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201980026826.6A
Other languages
English (en)
Chinese (zh)
Other versions
CN112368814A (zh
Inventor
格雷戈尔·埃里奥特
埃里克·汤尼斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Metras Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Metras Ltd filed Critical Metras Ltd
Publication of CN112368814A publication Critical patent/CN112368814A/zh
Application granted granted Critical
Publication of CN112368814B publication Critical patent/CN112368814B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N25/00—Investigating or analyzing materials by the use of thermal means
    • G01N25/72—Investigating presence of flaws
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3306—Horizontal transfer of a single workpiece

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN201980026826.6A 2018-04-19 2019-04-03 半导体晶片质量计量装置和半导体晶片质量计量方法 Active CN112368814B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB1806377.6A GB201806377D0 (en) 2018-04-19 2018-04-19 Semiconductor wafer mass metrology apparatus and semiconductor wafer mass metrology method
GB1806377.6 2018-04-19
PCT/EP2019/058388 WO2019201603A1 (en) 2018-04-19 2019-04-03 Semiconductor wafer mass metrology apparatus and semiconductor wafer mass metrology method

Publications (2)

Publication Number Publication Date
CN112368814A CN112368814A (zh) 2021-02-12
CN112368814B true CN112368814B (zh) 2025-02-28

Family

ID=62236133

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980026826.6A Active CN112368814B (zh) 2018-04-19 2019-04-03 半导体晶片质量计量装置和半导体晶片质量计量方法

Country Status (9)

Country Link
US (1) US12288702B2 (https=)
EP (1) EP3782188B1 (https=)
JP (1) JP7335896B2 (https=)
KR (3) KR102547839B1 (https=)
CN (1) CN112368814B (https=)
GB (1) GB201806377D0 (https=)
SG (1) SG11202010143VA (https=)
TW (1) TWI822759B (https=)
WO (1) WO2019201603A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201815815D0 (en) * 2018-09-28 2018-11-14 Metryx Ltd Method and apparatus for controlling the temperature of a semiconductor wafer
CN113496912B (zh) * 2020-04-02 2023-10-17 长鑫存储技术有限公司 监测晶圆及监测系统
CN113819985A (zh) * 2020-06-18 2021-12-21 拓荆科技股份有限公司 晶圆防干扰称重装置及其应用
CN116417319A (zh) * 2021-12-30 2023-07-11 中微半导体设备(上海)股份有限公司 一种控温装置及相应的等离子体处理器
KR102706137B1 (ko) * 2022-06-14 2024-09-13 주식회사 코비스테크놀로지 병렬구조의 질량측정장치를 이용한 질량측정방법
GB202414501D0 (en) * 2024-10-02 2024-11-13 Metryx Ltd Method and apparatus for controlling the temperature of a wafer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103579044A (zh) * 2012-07-30 2014-02-12 应用材料以色列公司 半导体晶圆的温度控制系统及方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6072163A (en) * 1998-03-05 2000-06-06 Fsi International Inc. Combination bake/chill apparatus incorporating low thermal mass, thermally conductive bakeplate
KR100342754B1 (ko) 1999-11-10 2002-07-04 황인길 무게 측정을 통한 반도체 웨이퍼의 정렬 시스템
GB0016562D0 (en) 2000-07-05 2000-08-23 Metryx Limited Apparatus and method for investigating semiconductor wafers
US6790376B1 (en) * 2001-07-23 2004-09-14 Advanced Micro Devices, Inc. Process control based upon weight or mass measurements, and systems for accomplishing same
CN1702849A (zh) * 2004-05-26 2005-11-30 松下电器产业株式会社 温度异常检测方法及半导体制造装置
US20060004493A1 (en) * 2004-06-30 2006-01-05 Jack Hwang Use of active temperature control to provide emmisivity independent wafer temperature
US20060286807A1 (en) * 2005-06-16 2006-12-21 Jack Hwang Use of active temperature control to provide emmisivity independent wafer temperature
KR20060118747A (ko) * 2005-05-17 2006-11-24 삼성전자주식회사 온도 조절 어셈블리 및 이를 갖는 이온 주입 장치
US7534627B2 (en) * 2006-08-07 2009-05-19 Sokudo Co., Ltd. Methods and systems for controlling critical dimensions in track lithography tools
US7935942B2 (en) * 2006-08-15 2011-05-03 Varian Semiconductor Equipment Associates, Inc. Technique for low-temperature ion implantation
GB0719469D0 (en) 2007-10-04 2007-11-14 Metryx Ltd Measurement apparatus and method
GB0719460D0 (en) 2007-10-04 2007-11-14 Metryx Ltd Measurement apparatus and method
DE102008041250A1 (de) 2008-08-13 2010-02-25 Ers Electronic Gmbh Verfahren und Vorrichtung zum thermischen Bearbeiten von Kunststoffscheiben, insbesondere Moldwafern
GB201315715D0 (en) * 2013-09-04 2013-10-16 Metryx Ltd Method and device for determining information relating to the mass of a semiconductor wafer
GB201321423D0 (en) * 2013-12-04 2014-01-15 Metryx Ltd Semiconductor wafer processing methods and apparatus
WO2015169616A1 (en) * 2014-05-06 2015-11-12 Asml Netherlands B.V. Substrate support, method for loading a substrate on a substrate support location, lithographic apparatus and device manufacturing method
US20150332942A1 (en) 2014-05-16 2015-11-19 Eng Sheng Peh Pedestal fluid-based thermal control
US10430719B2 (en) * 2014-11-25 2019-10-01 Stream Mosaic, Inc. Process control techniques for semiconductor manufacturing processes
US10269682B2 (en) 2015-10-09 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Cooling devices, packaged semiconductor devices, and methods of packaging semiconductor devices
GB201815815D0 (en) * 2018-09-28 2018-11-14 Metryx Ltd Method and apparatus for controlling the temperature of a semiconductor wafer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103579044A (zh) * 2012-07-30 2014-02-12 应用材料以色列公司 半导体晶圆的温度控制系统及方法

Also Published As

Publication number Publication date
JP7335896B2 (ja) 2023-08-30
JP2021521441A (ja) 2021-08-26
CN112368814A (zh) 2021-02-12
WO2019201603A1 (en) 2019-10-24
TWI822759B (zh) 2023-11-21
KR102902474B1 (ko) 2025-12-18
KR102547839B1 (ko) 2023-06-23
KR20260003408A (ko) 2026-01-06
KR20230098696A (ko) 2023-07-04
KR20200143480A (ko) 2020-12-23
EP3782188A1 (en) 2021-02-24
EP3782188B1 (en) 2023-06-21
US20210175102A1 (en) 2021-06-10
US12288702B2 (en) 2025-04-29
SG11202010143VA (en) 2020-11-27
TW202002125A (zh) 2020-01-01
GB201806377D0 (en) 2018-06-06

Similar Documents

Publication Publication Date Title
CN112368814B (zh) 半导体晶片质量计量装置和半导体晶片质量计量方法
CN112771354B (zh) 用于控制半导体晶片温度的方法和设备
JP6883618B2 (ja) 半導体ウェハ計測方法および半導体ウェハ計測装置
US20260005049A1 (en) End effector

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20260401

Address after: California, USA

Patentee after: LAM RESEARCH Corp.

Country or region after: U.S.A.

Address before: Bristol

Patentee before: Metras Ltd.

Country or region before: United Kingdom