KR102547839B1 - 반도체 웨이퍼 질량 계측 장치 및 반도체 웨이퍼 질량 계측 방법 - Google Patents

반도체 웨이퍼 질량 계측 장치 및 반도체 웨이퍼 질량 계측 방법 Download PDF

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KR102547839B1
KR102547839B1 KR1020207033146A KR20207033146A KR102547839B1 KR 102547839 B1 KR102547839 B1 KR 102547839B1 KR 1020207033146 A KR1020207033146 A KR 1020207033146A KR 20207033146 A KR20207033146 A KR 20207033146A KR 102547839 B1 KR102547839 B1 KR 102547839B1
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temperature
semiconductor wafer
heat transfer
transfer plate
mass
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KR20200143480A (ko
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그레고르 엘리엇
에릭 토니스
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메트릭스 리미티드
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    • H01L21/67253—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N25/00—Investigating or analyzing materials by the use of thermal means
    • G01N25/72—Investigating presence of flaws
    • H01L21/67103—
    • H01L21/67109—
    • H01L21/67248—
    • H01L21/67748—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3306—Horizontal transfer of a single workpiece

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020207033146A 2018-04-19 2019-04-03 반도체 웨이퍼 질량 계측 장치 및 반도체 웨이퍼 질량 계측 방법 Active KR102547839B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020237021001A KR102902474B1 (ko) 2018-04-19 2019-04-03 반도체 웨이퍼 질량 계측 장치 및 반도체 웨이퍼 질량 계측 방법

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB1806377.6A GB201806377D0 (en) 2018-04-19 2018-04-19 Semiconductor wafer mass metrology apparatus and semiconductor wafer mass metrology method
GB1806377.6 2018-04-19
PCT/EP2019/058388 WO2019201603A1 (en) 2018-04-19 2019-04-03 Semiconductor wafer mass metrology apparatus and semiconductor wafer mass metrology method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020237021001A Division KR102902474B1 (ko) 2018-04-19 2019-04-03 반도체 웨이퍼 질량 계측 장치 및 반도체 웨이퍼 질량 계측 방법

Publications (2)

Publication Number Publication Date
KR20200143480A KR20200143480A (ko) 2020-12-23
KR102547839B1 true KR102547839B1 (ko) 2023-06-23

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Application Number Title Priority Date Filing Date
KR1020207033146A Active KR102547839B1 (ko) 2018-04-19 2019-04-03 반도체 웨이퍼 질량 계측 장치 및 반도체 웨이퍼 질량 계측 방법
KR1020257042013A Pending KR20260003408A (ko) 2018-04-19 2019-04-03 반도체 웨이퍼 질량 계측 장치 및 반도체 웨이퍼 질량 계측 방법
KR1020237021001A Active KR102902474B1 (ko) 2018-04-19 2019-04-03 반도체 웨이퍼 질량 계측 장치 및 반도체 웨이퍼 질량 계측 방법

Family Applications After (2)

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KR1020257042013A Pending KR20260003408A (ko) 2018-04-19 2019-04-03 반도체 웨이퍼 질량 계측 장치 및 반도체 웨이퍼 질량 계측 방법
KR1020237021001A Active KR102902474B1 (ko) 2018-04-19 2019-04-03 반도체 웨이퍼 질량 계측 장치 및 반도체 웨이퍼 질량 계측 방법

Country Status (9)

Country Link
US (1) US12288702B2 (https=)
EP (1) EP3782188B1 (https=)
JP (1) JP7335896B2 (https=)
KR (3) KR102547839B1 (https=)
CN (1) CN112368814B (https=)
GB (1) GB201806377D0 (https=)
SG (1) SG11202010143VA (https=)
TW (1) TWI822759B (https=)
WO (1) WO2019201603A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201815815D0 (en) * 2018-09-28 2018-11-14 Metryx Ltd Method and apparatus for controlling the temperature of a semiconductor wafer
CN113496912B (zh) * 2020-04-02 2023-10-17 长鑫存储技术有限公司 监测晶圆及监测系统
CN113819985A (zh) * 2020-06-18 2021-12-21 拓荆科技股份有限公司 晶圆防干扰称重装置及其应用
CN116417319A (zh) * 2021-12-30 2023-07-11 中微半导体设备(上海)股份有限公司 一种控温装置及相应的等离子体处理器
KR102706137B1 (ko) * 2022-06-14 2024-09-13 주식회사 코비스테크놀로지 병렬구조의 질량측정장치를 이용한 질량측정방법
GB202414501D0 (en) * 2024-10-02 2024-11-13 Metryx Ltd Method and apparatus for controlling the temperature of a wafer

Citations (1)

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JP2017507474A (ja) * 2013-12-04 2017-03-16 メトリックス・リミテッドＭｅｔｒｙｘ Ｌｉｍｉｔｅｄ 半導体ウェハ処理方法および装置

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US6072163A (en) * 1998-03-05 2000-06-06 Fsi International Inc. Combination bake/chill apparatus incorporating low thermal mass, thermally conductive bakeplate
KR100342754B1 (ko) 1999-11-10 2002-07-04 황인길 무게 측정을 통한 반도체 웨이퍼의 정렬 시스템
GB0016562D0 (en) 2000-07-05 2000-08-23 Metryx Limited Apparatus and method for investigating semiconductor wafers
US6790376B1 (en) * 2001-07-23 2004-09-14 Advanced Micro Devices, Inc. Process control based upon weight or mass measurements, and systems for accomplishing same
CN1702849A (zh) * 2004-05-26 2005-11-30 松下电器产业株式会社 温度异常检测方法及半导体制造装置
US20060004493A1 (en) * 2004-06-30 2006-01-05 Jack Hwang Use of active temperature control to provide emmisivity independent wafer temperature
US20060286807A1 (en) * 2005-06-16 2006-12-21 Jack Hwang Use of active temperature control to provide emmisivity independent wafer temperature
KR20060118747A (ko) * 2005-05-17 2006-11-24 삼성전자주식회사 온도 조절 어셈블리 및 이를 갖는 이온 주입 장치
US7534627B2 (en) * 2006-08-07 2009-05-19 Sokudo Co., Ltd. Methods and systems for controlling critical dimensions in track lithography tools
US7935942B2 (en) * 2006-08-15 2011-05-03 Varian Semiconductor Equipment Associates, Inc. Technique for low-temperature ion implantation
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Publication number Publication date
JP7335896B2 (ja) 2023-08-30
JP2021521441A (ja) 2021-08-26
CN112368814A (zh) 2021-02-12
WO2019201603A1 (en) 2019-10-24
TWI822759B (zh) 2023-11-21
KR102902474B1 (ko) 2025-12-18
KR20260003408A (ko) 2026-01-06
KR20230098696A (ko) 2023-07-04
KR20200143480A (ko) 2020-12-23
EP3782188A1 (en) 2021-02-24
CN112368814B (zh) 2025-02-28
EP3782188B1 (en) 2023-06-21
US20210175102A1 (en) 2021-06-10
US12288702B2 (en) 2025-04-29
SG11202010143VA (en) 2020-11-27
TW202002125A (zh) 2020-01-01
GB201806377D0 (en) 2018-06-06

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