JP7333849B2 - SUBSTRATE LIQUID PROCESSING APPARATUS, SUBSTRATE LIQUID PROCESSING METHOD, AND STORAGE MEDIUM - Google Patents

Description

The present disclosure relates to a substrate liquid processing apparatus, a substrate liquid processing method, and a storage medium.

Patent Document 1 discloses an overflow tank, a pump that circulates an etching solution (processing solution) in the tank, a heater that heats the processing solution in the tank to a constant temperature, a temperature controller that controls the temperature, and a A processing apparatus is disclosed which includes a frame for fixing a cassette of wafers to a dispersion plate provided in the bottom of the tank, and a bubbler for bubbling the processing liquid in the tank with nitrogen.

JP-A-07-58078

A gas such as nitrogen used for the bubbling described above is supplied from a gas nozzle provided at the bottom of the tank. Here, an upward flow of the processing liquid is generated in the tank by supplying the gas from the gas nozzle. Although this makes it easy to keep the state of the processing liquid uniform, the processing liquid tends to stagnate due to the gas flow at a specific location. Specifically, stagnation of the processing liquid due to the turbulence of the gas flow tends to occur at the edge of the opening of the gas nozzle. For this reason, crystals such as components eluted from the substrate and various pipes may occur on the edge of the opening of the gas nozzle, and these crystals may hinder gas ejection.

Accordingly, an object of the present disclosure is to provide a substrate liquid processing apparatus, a substrate liquid processing method, and a storage medium that are effective in suppressing the generation of crystals or removing the crystals.

A substrate liquid processing apparatus according to the present disclosure includes a processing tank containing a processing liquid and a substrate, a gas nozzle for discharging gas into the lower part of the processing tank, a gas supply unit for supplying gas, and a gas nozzle and the gas supply unit connected to each other. a gas supply line, a depressurizing section that draws the processing liquid in the processing bath into the gas supply line by decompressing the gas supply line, and a part of the idle period in which the substrate is not accommodated in the processing bath, the gas is not supplied. a control unit configured to perform a first control that controls the gas supply unit to stop and controls the decompression unit to draw the processing liquid into the gas supply line.

According to the present disclosure, it is possible to provide a substrate liquid processing apparatus, a substrate liquid processing method, and a storage medium that are effective in suppressing the generation of crystals or removing the crystals.

1 is a plan view schematically showing a substrate liquid processing system; FIG. It is a schematic diagram of an etching processing apparatus. 4 is a block diagram showing a functional configuration of a control unit; FIG. It is a flowchart of a substrate processing procedure. 4 is a flow chart of a process liquid filling procedure. It is a flow chart of a lot processing procedure. 4 is a flow chart of a liquid exchange processing procedure; 4 is a flowchart of an idle processing procedure; 4 is a flowchart of first idle control in a first idle period; 8 is a flowchart of second idle control during a second idle period; FIG. 10 is an explanatory diagram of a lot processing procedure; FIG. 10 is an explanatory diagram of a liquid exchange processing procedure; FIG. 5 is an explanatory diagram of second idle control; It is explanatory drawing of the substrate processing procedure, (a) is explanatory drawing of the substrate processing procedure which concerns on a comparative example, (b) is explanatory drawing of the substrate processing procedure which concerns on this embodiment. It is explanatory drawing about the discharge of the gas from the gas nozzle in each process, (a) is explanatory drawing of a comparative example, (b) is explanatory drawing of an Example. It is a flow chart of high flow rate control. It is a schematic diagram of the etching processing apparatus which concerns on a modification. It is a graph which shows the frequency distribution of the number of bubbles. It is a figure which shows the relationship between the number of bubbles, and a boiling state. It is the figure which looked at the gas nozzle from the side. 21 is an enlarged view of the gas nozzle shown in FIG. 20; FIG. FIG. 4 is a diagram showing a crystallization mechanism in a gas nozzle, where (a) shows the state before crystallization, (b) shows the state during crystallization, and (c) shows the gas nozzle clogged state after crystallization.

Hereinafter, embodiments will be described in detail with reference to the drawings. In the description, the same reference numerals are given to the same elements or elements having the same function, and overlapping descriptions are omitted.

As shown in FIG. 1, the substrate liquid processing system 1A includes a carrier loading/unloading section 2, a lot formation section 3, a lot placement section 4, a lot transfer section 5, a lot processing section 6, and a control section 7. have

Of these, the carrier loading/unloading section 2 loads and unloads a carrier 9 containing a plurality of (for example, 25) substrates (silicon wafers) 8 arranged vertically in a horizontal posture. The carrier loading/unloading section 2 includes a carrier stage 10 on which a plurality of carriers 9 are placed, a carrier transport mechanism 11 for transporting the carriers 9, carrier stocks 12 and 13 for temporarily storing the carriers 9, A carrier mounting table 14 on which the carrier 9 is mounted is provided. Here, the carrier stock 12 is temporarily stored before the substrates 8 as products are processed in the lot processing unit 6 . Further, the carrier stock 13 is temporarily stored after the substrates 8 as products are processed by the lot processing unit 6 .

Then, the carrier loading/unloading section 2 transports the carrier 9 loaded onto the carrier stage 10 from the outside to the carrier stock 12 and the carrier mounting table 14 using the carrier transport mechanism 11 . Further, the carrier loading/unloading section 2 transports the carrier 9 mounted on the carrier mounting table 14 to the carrier stock 13 and the carrier stage 10 using the carrier transport mechanism 11 . The carrier 9 transported to the carrier stage 10 is carried out to the outside.

The lot forming section 3 combines the substrates 8 accommodated in one or more carriers 9 to form a lot consisting of a plurality of (for example, 50) substrates 8 to be processed simultaneously. When forming lots, the lots may be formed so that the surfaces of the substrate 8 on which the pattern is formed face each other. The lots may be formed so that they all face one way. The lot forming section 3 is provided with a substrate transport mechanism 15 for transporting a plurality of substrates 8 . The substrate transport mechanism 15 can change the posture of the substrate 8 from the horizontal posture to the vertical posture and from the vertical posture to the horizontal posture while the substrate 8 is being transported.

Then, the lot forming section 3 transports the substrates 8 from the carrier 9 mounted on the carrier mounting table 14 to the lot mounting section 4 by using the substrate transfer mechanism 15, and the substrates 8 forming a lot are transferred to the lot mounting section. 4. Also, the lot forming section 3 transfers the lot placed on the lot placement section 4 to the carrier 9 placed on the carrier placement table 14 by the substrate transfer mechanism 15 . The substrate transport mechanism 15 includes, as substrate support units for supporting a plurality of substrates 8, an unprocessed substrate support unit that supports the substrates 8 before processing (before being transported by the lot transport unit 5), and a substrate support unit that supports the substrates 8 before processing. There are two types of post-processing substrate supporting parts that support the substrates 8 later (after being transferred by the lot transfer part 5). This prevents particles or the like attached to the substrate 8 or the like before processing from being transferred to the substrate 8 or the like after processing.

The lot placing unit 4 temporarily places (stands by) the lot transported between the lot forming unit 3 and the lot processing unit 6 by the lot transporting unit 5 on the lot placing table 16 . The lot placement unit 4 includes a load-in side lot placement table 17 for placing a lot before processing (before being transported by the lot transporting unit 5) and a lot after processing (after being transported by the lot transporting unit 5). A carrying-out side lot placing table 18 for placing a lot is provided. A plurality of substrates 8 for one lot are placed on the load-in side lot placement table 17 and the carry-out side lot placement table 18 side by side in a vertical posture. In the lot placing section 4 , the lot formed in the lot forming section 3 is placed on the loading-side lot placing table 17 , and the lot is carried into the lot processing section 6 via the lot conveying section 5 . In the lot placing section 4 , the lot carried out from the lot processing section 6 via the lot conveying section 5 is placed on the carry-out side lot placing table 18 , and the lot is conveyed to the lot forming section 3 .

The lot transport unit 5 transports lots between the lot placement unit 4 and the lot processing unit 6 and between the insides of the lot processing unit 6 . The lot transport unit 5 is provided with a lot transport mechanism 19 for transporting lots. The lot transport mechanism 19 comprises a rail 20 arranged along the lot placing section 4 and the lot processing section 6, and a movable body 21 that moves along the rail 20 while holding a plurality of substrates 8. FIG. The moving body 21 is provided with a substrate holder 22 that holds a plurality of substrates 8 arranged vertically in a forward and backward direction so as to be able to move back and forth. The lot transporter 5 receives the lot placed on the loading-side lot placement table 17 by the substrate holder 22 of the lot transport mechanism 19 and transfers the lot to the lot processing unit 6 . The lot transporter 5 also receives the lot processed by the lot processing unit 6 by the substrate holder 22 of the lot transport mechanism 19 , and transfers the lot to the carry-out side lot table 18 . Furthermore, the lot transport unit 5 uses the lot transport mechanism 19 to transport the lot inside the lot processing unit 6 .

The lot processing unit 6 performs processing such as etching, cleaning, and drying on a plurality of substrates 8 arranged in a vertical posture as one lot. The lot processing unit 6 includes a drying processing device 23 for drying the substrate 8 , a substrate holder cleaning processing device 24 for cleaning the substrate holder 22 , and a cleaning processing device 1 for cleaning the substrate 8 . , and two etching processing apparatuses 26 according to the present invention for etching the substrate 8 are provided side by side.

The drying processing apparatus 23 has a processing tank 27 and a substrate elevating mechanism 28 provided in the processing tank 27 so as to be movable up and down. A drying processing gas (IPA (isopropyl alcohol) or the like) is supplied to the processing bath 27 . The substrate lifting mechanism 28 holds a plurality of substrates 8 for one lot side by side in a vertical posture. The drying processing apparatus 23 receives the lot from the substrate holder 22 of the lot transport mechanism 19 by the substrate lifting mechanism 28 and lifts the lot by the substrate lifting mechanism 28, thereby using the processing gas for drying supplied to the processing tank 27. A drying process for the substrate 8 is performed. The drying processing device 23 also transfers the lot from the substrate lifting mechanism 28 to the substrate holder 22 of the lot transport mechanism 19 . The substrate holder cleaning processing apparatus 24 has a processing bath 29, and can supply a cleaning processing liquid and a drying gas to the processing bath 29. After the treatment liquid is supplied, the substrate holder 22 is cleaned by supplying dry gas.

The cleaning processing apparatus 1 has a processing bath 30 for cleaning and a processing bath 31 for rinsing. A cleaning treatment liquid (SC-1 or the like) is stored in the cleaning treatment bath 30 . A processing liquid for rinsing (pure water or the like) is stored in the processing tank 31 for rinsing. The etching processing apparatus 26 has a processing bath 34 for etching and a processing bath 35 for rinsing. An etching treatment liquid (phosphoric acid aqueous solution) is stored in the etching treatment bath 34 . A processing liquid for rinsing (pure water or the like) is stored in the processing tank 35 for rinsing.

The cleaning apparatus 1 and the etching apparatus 26 have the same configuration. To explain the cleaning apparatus 1, the substrate lifting mechanism 32 holds a plurality of substrates 8 for one lot arranged in a vertical posture in the front-rear direction. In the cleaning processing apparatus 1, the lot is received by the substrate lifting mechanism 32 from the substrate holder 22 of the lot transport mechanism 19, and the lot is lifted and lowered by the substrate lifting mechanism 32 so that the lot is immersed in the processing liquid for cleaning in the processing bath 30. Then, the substrate 8 is washed. After that, the cleaning apparatus 1 transfers the lot from the substrate lifting mechanism 32 to the substrate holder 22 of the lot transport mechanism 19 . Further, the lot is received by the substrate lifting mechanism 33 from the substrate holder 22 of the lot transport mechanism 19, and the lot is lifted and lowered by the substrate lifting mechanism 33 so that the lot is immersed in the treatment liquid for rinsing in the treatment bath 31 and the substrate 8 is transferred. rinsing. After that, the lot is transferred from the substrate lifting mechanism 33 to the substrate holder 22 of the lot transport mechanism 19 .

The control unit 7 controls the operation of each unit of the substrate liquid processing system 1A (carrier loading/unloading unit 2, lot formation unit 3, lot placement unit 4, lot transfer unit 5, lot processing unit 6, cleaning apparatus 1). . The control unit 7 is composed of a computer, for example, and has a computer-readable storage medium 38 . The storage medium 38 stores, for example, programs for controlling various processes executed in the cleaning apparatus 1 . The control unit 7 controls, for example, the operation of the cleaning apparatus 1 by reading and executing programs stored in the storage medium 38 . The program may be stored in the computer-readable storage medium 38 and may be installed in the storage medium 38 of the control unit 7 from another storage medium. The computer-readable storage medium 38 includes, for example, a hard disk (HD), flexible disk (FD), compact disk (CD), magnet optical disk (MO), memory card, and the like.

[Substrate liquid processing device]
Next, the substrate liquid processing apparatus A1 included in the substrate liquid processing system 1A will be described in detail. As shown in FIGS. 2 and 3, the substrate liquid processing apparatus A1 includes a cleaning processing apparatus 1 and a control section 7. As shown in FIG.

(Washing equipment)
The cleaning apparatus 1 includes a liquid processing unit 40, a processing liquid supply unit 44, a processing liquid discharge unit 67, a plurality of (for example, six) gas nozzles 70, a gas supply unit 90, a gas supply line 93, a pressure reduction A portion 95 and an open line 97 are provided.

The liquid processing section 40 is a section that performs liquid processing (cleaning processing) on the substrate 8 , and includes a processing bath 41 , an outer bath 42 , and a processing liquid 43 . The processing tank 41 accommodates the processing liquid 43 and the substrate 8 . A specific example of the treatment liquid 43 is SC-1. Since the upper portion of the processing tank 41 is open, the substrate 8 can be immersed in the processing liquid 43 in the processing tank 41 from above. A circular substrate 8 is arranged in an upright state in the processing bath 41 . Hereinafter, the direction perpendicular to the height direction along the substrate 8 in the processing tank 41 is referred to as the "width direction", and the direction perpendicular to the height direction and the width direction (that is, the thickness direction of the substrate 8 in the processing tank 41) is referred to as the "width direction". It may be described as "depth direction". Both side portions in the width direction of the bottom surface of the processing tank 41 increase toward the outside. The outer bath 42 is provided so as to surround the processing bath 41 and accommodates the processing liquid 43 overflowing from the processing bath 41 .

The processing liquid supply unit 44 supplies the processing liquid 43 into the processing tank 41 . For example, the processing liquid supply unit 44 has a processing liquid supply source 45 , a flow rate regulator 46 , a pure water supply source 47 , a flow rate regulator 48 , a processing liquid circulation section 49 and a concentration measurement section 55 .

The processing liquid supply source 45 supplies the processing liquid 43 to the outer tank 42 . The flow controller 46 is provided in the flow path of the processing liquid 43 from the processing liquid supply source 45 to the outer tank 42, and performs opening/closing and opening adjustment of the flow path. A pure water supply source 47 supplies pure water to the outer tank 42 . This pure water compensates for the moisture evaporated by heating the treatment liquid 43 . The flow controller 48 is provided in the pure water flow path from the pure water supply source 47 to the outer tank 42, and performs opening/closing and opening degree adjustment of the flow path.

The processing liquid circulation unit 49 sends the processing liquid 43 in the outer bath 42 to the lower part of the processing bath 41 . For example, the treatment liquid circulation section 49 has a plurality (eg, three) of treatment liquid nozzles 50 , a circulation flow path 51 , a supply pump 52 , a filter 53 , and a heater 54 .

The processing liquid nozzle 50 is provided in the lower portion of the outer bath 42 and discharges the processing liquid 43 into the processing bath 41 . The plurality of processing liquid nozzles 50 are arranged in the width direction at the same height and extend in the depth direction. The circulation channel 51 guides the processing liquid 43 from the outer tank 42 to the plurality of processing liquid nozzles 50 . One end of the circulation channel 51 is connected to the bottom of the outer tank 42 . The other end of the circulation flow path 51 is branched into a plurality of lines and connected to a plurality of processing liquid nozzles 50 respectively. The supply pump 52, the filter 53, and the heater 54 are provided in the circulation flow path 51, and are arranged in order from the upstream side (outer tank 42 side) to the downstream side (processing liquid nozzle 50 side). The supply pump 52 pressure-feeds the processing liquid 43 from the upstream side to the downstream side. The filter 53 removes particles mixed in the processing liquid 43 . The heater 54 heats the treatment liquid 43 to a set temperature. The set temperature is set to a value near the boiling point of the treatment liquid 43, for example.

The concentration measurement unit 55 measures the concentration of the treatment liquid 43 . For example, the concentration measurement unit 55 has a measurement channel 56 , on-off valves 57 and 59 , a concentration sensor 58 , a cleaning fluid supply unit 60 and a cleaning fluid discharge unit 64 .

The measurement flow path 56 branches from the circulation flow path 51 between the heater 54 and the treatment liquid nozzle 50 , extracts part of the treatment liquid 43 , and returns it to the outer tank 42 . The on-off valves 57 and 59 are arranged in order from the upstream side (circulation flow path 51 side) to the downstream side (outer tank 42 side) in the measurement flow path 56 and open and close the measurement flow path 56 respectively. The concentration sensor 58 is provided between the on-off valves 57 and 59 in the measurement channel 56 and measures the concentration (for example, phosphoric acid concentration) of the processing liquid 43 flowing through the measurement channel 56 . The cleaning fluid supply unit 60 supplies cleaning fluid (for example, pure water) to the concentration sensor 58 . For example, the cleaning fluid supply unit 60 has a cleaning fluid supply source 61 , a supply channel 62 and an on-off valve 63 . Cleaning fluid source 61 is a source of cleaning fluid. The supply channel 62 supplies the cleaning fluid from the cleaning fluid supply source 61 to the concentration sensor 58 . One end of the supply channel 62 is connected to the cleaning fluid supply source 61 , and the other end of the supply channel 62 is connected between the on-off valve 57 and the concentration sensor 58 . The on-off valve 63 opens and closes the supply channel 62 . The cleaning fluid discharge part 64 discharges the cleaning fluid. For example, the cleaning fluid discharge section 64 has a discharge channel 65 and an on-off valve 66 . A discharge channel 65 leads the cleaning fluid that has passed through the concentration sensor 58 . One end of the discharge channel 65 is connected between the concentration sensor 58 and the on-off valve 59, and the other end of the discharge channel 65 is connected to a drain pipe (not shown) of the substrate liquid processing system 1A. there is The on-off valve 66 opens and closes the discharge channel 65 .

The processing liquid discharge part 67 discharges the processing liquid 43 from the processing tank 41 . For example, the processing liquid discharge section 67 has a drainage channel 68 and an on-off valve 69 . The drainage channel 68 leads out the processing liquid 43 in the processing tank 41 . One end of the drainage channel 68 is connected to the bottom of the processing tank 41, and the other end of the drainage channel 68 is connected to a drainage pipe (not shown) of the substrate liquid processing system 1A. The on-off valve 69 opens and closes the drainage flow path 68 .

A plurality of gas nozzles 70 eject an inert gas (for example, N2 gas) in the lower part of the processing bath 41 . The plurality of gas nozzles 70 are arranged in the width direction below the processing liquid nozzle 50 and extend in the depth direction. The height of each gas nozzle 70 increases with distance from the center in the width direction. A plurality of gas nozzles 70 may be arranged along an arc concentric with the substrate 8 . Lined up along the arc includes not only the case where the gas nozzles 70 are positioned on the arc, but also the case where some of the gas nozzles 70 are deviated from the arc within a predetermined range. The predetermined range can be arbitrarily set as long as the distance from each gas nozzle 70 to the center of the substrate 8 is more uniform than when the plurality of gas nozzles 70 are positioned at the same height.

For example, the plurality of gas nozzles 70 are a pair of gas nozzles 70A located innermost in the width direction, a pair of gas nozzles 70B located outside the pair of gas nozzles 70A, and a pair of gas nozzles 70B located further outside the pair of gas nozzles 70B. gas nozzle 70C. The gas nozzles 70B, 70B are located above the gas nozzles 70A, 70A, and the gas nozzles 70C, 70C are located above the gas nozzles 70B, 70B. Gas nozzles 70A, 70A, 70B, 70B, 70C, and 70C are arranged along an arc concentric with substrate 8 . Note that the number and arrangement of the gas nozzles 70 can be changed as appropriate. A plurality of gas nozzles 70 may be arranged at the same height.

The gas supply unit 90 supplies inert gas. The gas supply unit 90 has a gas supply source 91 a , a flow controller 91 b and a supply valve 92 . The gas supply source 91a is an inert gas supply source. The supply valve 92 is provided in the gas supply line 93 and opens and closes the gas supply line 93 . The flow controller 91b adjusts the opening of the gas supply line 93 between the supply valve 92 and the gas supply source 91a to adjust the flow rate of the inert gas. The gas supply line 93 is an inert gas supply line that connects the plurality of gas nozzles 70 and the gas supply section 90 (specifically, the gas supply source 91a).

The open line 97 has one end connected to the gas supply line 93 and the other end open to the atmosphere to open the inert gas flowing through the gas supply line 93 to the atmosphere. The decompression unit 95 draws the processing liquid 43 in the processing tank 41 into the gas supply line 93 by decompressing the gas supply line 93 . The decompression unit 95 has an open valve 96 (valve) that is provided in the open line 97 and opens and closes the open line 97 . The decompression unit 95 decompresses the gas supply line 93 by opening the open valve 96 , and draws the processing liquid 43 in the processing tank 41 into the gas supply line 93 through the plurality of gas nozzles 70 . As long as the processing liquid 43 in the processing bath 41 can be drawn in, the degree of pressure is not limited to the atmospheric pressure, and the mechanism of the decompression unit 95 is also not limited.

(control part)
The control unit 7 controls the gas supply unit 90 so as to stop the gas supply during a part of the idle period in which the substrates 8 are not stored in the processing tank 41 , and the processing liquid 43 is drawn into the gas supply line 93 . A first control is executed to control the decompression unit 95 so that the pressure is reduced.

The control unit 7 may alternately and repeatedly execute the first control and the second control for controlling the gas supply unit 90 so as to supply gas during the idle period.

The control unit 7 controls the gas supply unit 90 so that the gas is supplied as the second control in the state where the processing liquid 43 is drawn into the gas supply line 93 , and the open valve 96 is opened to open the open line 97 . A third control that controls the decompression unit 95 so that the gas flowing through the gas supply line 93 flows in, and a third control that controls the gas supply unit 90 so that the gas is supplied, and closes the open valve 96 to open the gas supply line 93. and a fourth control that controls the decompression unit 95 so that the flowing gas flows toward the gas nozzle 70 .

As fourth control, the control unit 7 controls the gas supply unit 90 so that the processing liquid 43 drawn into the gas supply line 93 flows into the processing tank 41, and controls the processing liquid drawn into the gas supply line 93. and a sixth control that controls the gas supply unit 90 so that the liquid 43 oscillates within the gas supply line.

The idle period includes a first idle period transitioning from the substrate processing period in which the substrates 8 are processed in the processing bath 41, and a second idle period transitioning from the processing liquid replacement period in which the processing liquid 43 is replaced in the processing bath 41. There is a period, and the control unit 7 controls the processing in the second idle control, which is the first control in the second idle period, rather than the withdrawal amount of the treatment liquid 43 in the first idle control, which is the first control in the first idle period. The decompression unit 95 may be controlled so that the amount of the liquid 43 drawn in is increased.

In the following description, periods during substrate liquid processing under the control of the control unit 7 may be referred to as "lot period", "processing liquid replacement period", and "idle period". A lot period (substrate processing period) is a period during which lot processing (substrate processing) is performed. The lot treatment is a treatment of immersing a plurality of substrates 8 for one lot in the treatment liquid 43 . The processing liquid replacement period is a period during which liquid replacement processing is performed. The liquid exchange process is a process of exchanging the processing liquid in the processing bath 41 . The idle period is a period in which the substrate 8 is not contained in the treatment liquid 43 and a period in which the liquid exchange process is not performed. Idle processing is processing performed during an idle period.

FIG. 3 is a block diagram illustrating the functional configuration of the control section 7. As shown in FIG. As shown in FIG. 3, the control unit 7 includes a recipe storage unit 111, a liquid supply control unit 112, a drainage control unit 113, and an immersion control unit as functional components (hereinafter referred to as "functional modules"). It has a unit 114 , a gas supply control unit 115 , and a pressure reduction control unit 116 .

The recipe storage unit 111 stores recipes, which are various parameters set in advance to specify processing details. In the recipe, the order of processing, the time required for each processing (implementation time), and the like are set. The liquid supply control unit 112, the drainage control unit 113, the immersion control unit 114, the gas supply control unit 115, and the pressure reduction control unit 116 perform various controls according to the recipe.

The liquid supply control unit 112 controls the processing liquid supply unit 44 so that the processing liquid 43 is supplied into the processing tank 41 according to the recipe stored in the recipe storage unit 111 . Specifically, the liquid supply control unit 112 opens the flow controller 46 so that the processing liquid 43 is supplied into the outer tank 42 and operates the supply pump so that the processing liquid 43 is sent from the outer tank 42 to the processing tank 41 . 52 is driven.

The liquid discharge control section 113 controls the processing liquid discharge section 67 so that the processing liquid 43 is discharged from the processing tank 41 according to the recipe stored in the recipe storage section 111 . Specifically, the liquid discharge control unit 113 closes the flow rate regulators 46 and 48 so as to stop the supply of the processing liquid 43 and the deionized water, and starts discharging the processing liquid 43 from the processing bath 41. The on-off valve 69 is changed from the closed state to the open state as shown in FIG.

The immersion control unit 114 controls the substrate lifting mechanism 32 so that the substrates 8 (a plurality of substrates 8 for one lot) are immersed in the treatment liquid 43 according to the recipe stored in the recipe storage unit 111 . Specifically, the immersion controller 114 lowers the support arm (not shown) of the substrate lifting mechanism 32 to a height where one lot of substrates 8 is immersed in the treatment liquid 43 . After waiting for the predetermined substrate processing time stored in the recipe storage unit 111 , the immersion control unit 114 moves the substrate lifting mechanism 32 up to a height where the substrates 8 for one lot are positioned above the liquid surface of the processing liquid 43 . support arm (not shown).

The gas supply control unit 115 controls the gas supply unit 90 to supply the inert gas according to the recipe stored in the recipe storage unit 111 . Specifically, the gas supply control unit 115 opens the supply valve 92 so that the gas is supplied to the gas supply line 93 . Also, the gas supply control unit 115 adjusts the opening degree of the flow controller 91b so that the flow rate of the supplied gas is adjusted.

The gas supply control unit 115 controls the gas supply unit 90 so that the supply of gas is stopped in the first control executed during part of the idle period. Further, the gas supply control unit 115 controls the gas supply unit 90 so that the gas is supplied in the second control that is executed during the idle period in which the first control is not executed. Further, the gas supply control unit 115 controls the gas supply unit 90 so that the processing liquid 43 drawn into the gas supply line 93 flows into the processing tank 41 (so that a large amount of gas is supplied), and controlling the gas supply unit 90 so that the processing liquid 43 drawn into the supply line 93 fluctuates within the gas supply line (so that a small amount of gas is supplied). The processing liquid 43 is preferably swung to such an extent that the processing liquid 43 stagnating in the gas supply line and near the gas nozzle opening moves from that position to another position. The gas supply control unit 115 adjusts the gas flow rate by controlling the flow rate regulator 91b or the like.

The decompression control unit 116 controls the decompression unit 95 according to the recipe stored in the recipe storage unit 111 so that the gas supply line 93 is depressurized and the processing liquid in the processing tank 41 is drawn into the gas supply line 93 . do. Specifically, the decompression control unit 116 controls the open valve 96 provided in the open line 97 open to the atmosphere so that the gas supply line 93 is decompressed and the gas flows into the open line 97 from the gas supply line 93 . open. Further, the pressure reduction control unit 116 closes the open valve 96 so that the gas flowing through the gas supply line 93 flows toward the gas nozzle 70 . Alternatively, the pressure reduction control unit 116 may open the open valve 96 only during the second idle period transitioning from the processing liquid replacement period, and keep the open valve 96 closed during the first idle period transitioning from the lot processing period. As a result, the treatment liquid 43 is actively drawn in by opening the open valve 96 during the second idle period, whereas the treatment liquid 43 is not actively drawn in during the first idle period. As a result, the amount of processing liquid 43 drawn in during the second idle period is greater than the amount of processing liquid 43 drawn in during the first idle period.

[Substrate liquid processing method]
Next, a control procedure executed by the control unit 7 will be described as an example of the substrate liquid processing method. As shown in FIG. 4, the control unit 7 first executes step S1. Step S<b>1 includes filling control of the treatment liquid 43 . A more detailed procedure for filling control will be described later. Next, the control section 7 executes step S2. In step S2, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether or not the time until the start of the next liquid replacement processing is equal to or longer than the first time related to lot processing. The first time for lot processing is the time required for executing lot processing plus a predetermined buffer.

In step S2, if it is determined that the time until the start of the next liquid replacement process is longer than or equal to the first time (that is, the lot process can be executed before the start of the liquid replacement process), the control unit 7 Step S3 is executed. In step S3, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether or not the time until the start of next lot processing is equal to or less than the second time related to idle processing. The second time for idle processing is a time obtained by adding a predetermined buffer to the shortest time for idle processing.

If it is determined in step S3 that the time until the start of the next lot processing is the second time or less (that is, the lot processing is performed without intervening idle processing), the control unit 7 executes step S4. . Step S4 includes lot processing control. A more detailed procedure for lot processing control will be described later. The lot processing in step S4 is started at the start time of the lot processing based on the processing schedule of the recipe stored in the recipe storage unit 111. FIG. If it is determined in step S3 that the time until the start of the next lot processing is not equal to or shorter than the second time, the control section 7 executes step S5 and then step S4. Step S5 includes idle processing control. A more detailed procedure for idle processing control will be described later.

After step S4, the controller 7 executes step S6. In step S6, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether lot processing has been completed for all lots. In step S4, if lot processing has been completed for all lots, the substrate liquid processing is completed, and if not completed, the processing is repeated from step S2.

Further, in step S2, if it is determined that the time until the start of the next liquid replacement process is not equal to or longer than the first time period (that is, the lot process cannot be executed before the start of the liquid replacement process), the controller 7 executes step S7. In step S7, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether or not the time until the start of the liquid replacement processing is equal to or less than the second time related to the idle processing.

If it is determined in step S7 that the time until the start of the liquid replacement process is equal to or shorter than the second time (that is, the liquid replacement process is performed without intervening the idle process), the control unit 7 executes step S8. . Step S8 includes liquid exchange process control. A more detailed procedure for liquid exchange process control will be described later. The liquid replacement process in step S8 is started at the start time of the liquid replacement process based on the processing schedule of the recipe stored in the recipe storage unit 111. FIG. If it is determined in step S7 that the time until the start of the liquid replacement process is not equal to or shorter than the second time, the control section 7 executes step S9 and then step S8. Step S9 includes idle processing control. A more detailed procedure for idle processing control will be described later. When step S8 is completed, the process is executed again from step S2.

(Processing liquid filling procedure)
Next, a detailed procedure of filling control of the treatment liquid 43 in step S1 will be described. At the execution start timing of step S1, both the supply valve 92 provided in the gas supply line 93 and the release valve 96 provided in the release line 97 are closed. As shown in FIG. 5, the controller 7 first executes step S11. In step S11, the liquid supply control unit 112 controls the processing liquid supply unit 44 so that filling of the processing bath 41 with the processing liquid 43 is started. Specifically, the liquid supply controller 112 opens the flow controller 46 to start supplying the processing liquid 43 into the outer tank 42 in a state where the processing tank 41 is empty and the on-off valve 69 is closed. Then, the processing liquid supply unit 44 is controlled so that the supply pump 52 is driven to start the liquid transfer from the outer bath 42 to the processing bath 41 .

Next, the control section 7 executes step S12. In step S<b>12 , the gas supply control unit 115 opens the supply valve 92 to start supplying gas to the gas supply line 93 . Subsequently, the control section 7 executes step S13. In step S13, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether or not a predetermined filling time has elapsed. The predetermined filling time is a time during which the processing bath 41 is filled with a sufficient amount of the processing liquid 43 to perform lot processing in the processing bath 41 .

The process of step S13 is repeatedly executed until a predetermined filling time elapses in step S13, and when the predetermined filling time elapses, the control unit 7 executes step S14. In step S<b>14 , the liquid supply controller 112 starts circulation control of the treatment liquid 43 . The circulation of the processing liquid 43 is controlled by continuing to drive the supply pump 52 to control the processing liquid supply unit 44 so that the processing liquid 43 overflowing from the processing tank 41 into the outer tank 42 is circulated to the lower part of the processing tank 41. including doing In the circulation control, the liquid supply control unit 112 controls the processing liquid supply unit 44 so as to adjust the opening of the pure water flow rate regulator 48 according to the concentration of the processing liquid 43 detected by the concentration sensor 58. You can do what you do. Above, the said step S1 is completed.

(Lot processing procedure)
Next, a detailed procedure of lot processing control in step S4 will be described with reference to FIGS. 6 and 11. FIG. As shown in FIG. 6, the controller 7 first executes step S41. In step S41, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether or not the pre-processing is idle processing. The processing of step S41 is as follows: "If the preceding stage processing is idle processing, the gas supply is stopped and the open valve 96 is opened, whereas if the preceding stage processing is lot processing or liquid In the case of replacement processing, the gas is supplied and the open valve 96 is closed." In the description of the present embodiment, it is assumed that the gas supply is stopped and the open valve 96 is opened when the idle processing is finished. In the completed state, gas may be supplied and the open valve 96 may be closed, as in the case where the preceding stage processing is lot processing or the like. In this case, in lot processing control, the processing of steps S43 to S45 is performed first, and then the processing of step S42 and after is performed.

When it is determined in step S41 that the preceding stage processing is the idle processing (the state shown in FIG. 11(a)), the control unit 7 executes step S42. In step S42, the gas supply control unit 115 controls the gas supply unit 90 so that gas supply is started. Specifically, the gas supply control unit 115 opens the supply valve 92 so that the gas is supplied to the gas supply line 93 (see FIG. 11(b)). By opening the supply valve 92 while the open valve 96 is open, the gas supplied from the gas supply section 90 flows from the gas supply line 93 into the open line 97 .

On the other hand, if it is determined in step S41 that the preceding stage processing is not the idle processing, the control section 7 executes steps S43 to S45, and then executes step S42. At step S43, the gas supply control unit 115 controls the gas supply unit 90 to stop the gas supply. Specifically, the gas supply control unit 115 closes the supply valve 92 so as to stop the gas supply to the gas supply line 93 . In step S<b>44 , the decompression control unit 116 controls the decompression unit 95 so that the gas supply line 93 is decompressed and the processing liquid 43 in the processing tank 41 is drawn into the gas supply line 93 . Specifically, the decompression control unit 116 opens the open valve 96 so that the gas supply line 93 is decompressed and the gas flows into the open line 97 from the gas supply line 93 . In step S45, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether or not a predetermined gas stop/open time has elapsed since the gas supply was stopped and the release valve 96 was opened. The predetermined gas stop release time is a time during which a sufficient amount of the processing liquid 43 is drawn up to a predetermined height of the gas supply line 93 . The process of step S45 is repeatedly executed until the predetermined gas stop open time elapses in step S45, and when the predetermined gas stop open time elapses, the control unit 7 executes step S42 as described above.

After executing step S42, the control unit 7 executes step S46. In step S46, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether or not a predetermined open line supply time has elapsed after gas supply to the open line 97 was started in step S42. be. The predetermined open line supply time is, for example, a time period for supplying a sufficient amount of gas to remove water droplets, steam, etc. accumulated in the open line 97 from the open line 97, and is set to, for example, about 10 seconds.

In step S46, the process of step S46 is repeatedly executed until a predetermined open line supply time elapses, and when the predetermined open line supply time elapses, the control unit 7 executes step S47. In step S47, the pressure reduction control unit 116 closes the open valve 96 (see FIG. 11(c)). As a result, the gas supplied from the gas supply unit 90 flows toward the gas nozzle 70 without flowing into the open line 97 and is supplied from the opening of the gas nozzle 70 into the processing liquid 43 in the processing tank 41 . In this state, an upward flow of the processing liquid 43 is generated in the processing bath 41 .

Next, the control section 7 executes step S48. In step S48, the immersion control unit 114 changes the height from the height at which the plurality of substrates 8 for one lot are positioned above the liquid surface of the processing liquid 43 to the height at which the plurality of substrates 8 are immersed in the processing liquid 43. , controls the substrate lifting mechanism 32 so as to lower a plurality of support arms (not shown) (see FIG. 11(d)).

Next, the control section 7 executes step S49. In step S49, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether or not a predetermined substrate processing time has elapsed since the substrate was immersed in the processing liquid 43. FIG. The predetermined substrate processing time is set according to the required degree of cleaning. In step S49, the process of step S49 is repeatedly executed until a predetermined substrate processing time elapses, and when the predetermined substrate processing time elapses, the controller 7 executes step S50 as described above. In step S<b>50 , the immersion control unit 114 moves the plurality of support arms from a height at which the plurality of substrates 8 are immersed in the processing liquid 43 to a height at which the plurality of substrates 8 are positioned above the liquid surface of the processing liquid 43 . (not shown) is controlled to raise the substrate lifting mechanism 32 . The above step S4 is completed.

(Liquid exchange processing procedure)
Next, a detailed procedure of the liquid exchange process control in step S8 will be described with reference to FIGS. 7 and 12. FIG. As shown in FIG. 7, the controller 7 first executes step S81. In step S81, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether or not the pre-processing is idle processing. When it is determined in step S81 that the preceding stage processing is idle processing (the state shown in FIG. 12(a)), the control unit 7 executes steps S82 and S83. At step S<b>82 , the pressure reduction control unit 116 closes the open valve 96 . At step S<b>83 , the gas supply control unit 115 opens the supply valve 92 so that the gas is supplied to the gas supply line 93 .

If it is determined in step S81 that the pre-processing is not idle processing, or after step S83 is executed, the control unit 7 executes step S84. In step S84, the liquid discharge control section 113 controls the processing liquid discharge section 67 so that the discharge of the processing liquid 43 from the processing bath 41 is started (see FIG. 12(b)). Specifically, the liquid discharge control unit 113 closes the flow rate regulators 46 and 48 so as to stop the supply of the processing liquid 43 and the deionized water, and starts discharging the processing liquid 43 from the processing bath 41. The on-off valve 69 is changed from the closed state to the open state as shown in FIG.

Next, the control section 7 executes step S85. In step S85, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether or not a predetermined liquid draining time has elapsed after the start of liquid draining. The predetermined liquid draining time is a time sufficient for all the processing liquid 43 in the processing tank 41 to be drained. In step S85, the process of step S85 is repeatedly executed until a predetermined liquid drain time elapses, and after the predetermined liquid drain time elapses, the controller 7 executes step S86. In step S86, the gas supply control unit 115 closes the supply valve 92 so as to stop the gas supply to the gas supply line 93 (see FIG. 12(c)). In this way, the gas supply is started from step S83 before the timing (step S84) at which the liquid discharge is started, and the gas supply is continued until the liquid discharge time elapses and the liquid discharge is completed. Even when the processing liquid before replacement remains in the gas supply line 93, the processing liquid 43 before replacement remaining in the gas supply line 93 is reliably discharged from the gas supply line 93 by the completion of liquid drainage. can do. This prevents the processing liquid 43 before and after the liquid exchange from being mixed in the processing tank 41 . Note that the gas supply start timing and stop timing are not limited to the above. The gas supply may be started and stopped at timings other than those described above.

Next, the control section 7 executes step S87. In step S87, the liquid supply control unit 112 controls the processing liquid supply unit 44 so that filling of the processing bath 41 with the processing liquid 43 is started. For example, the liquid supply controller 112 opens the flow controller 46 to start supplying the processing liquid 43 into the outer tank 42 when the processing tank 41 is empty and the on-off valve 69 is closed. The processing liquid supply unit 44 is controlled so that the pump 52 is driven to start feeding the liquid from the outer bath 42 to the processing bath 41 .

Next, the control section 7 executes step S88. In step S88, the gas supply control unit 115 opens the supply valve 92 so that gas supply to the gas supply line 93 is started (see FIG. 12(d)). Subsequently, the control section 7 executes step S89. In step S89, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether or not a predetermined filling time has elapsed. The predetermined filling time is a time during which the processing bath 41 is filled with a sufficient amount of the processing liquid 43 to perform lot processing in the processing bath 41 .

The process of step S89 is repeatedly executed until a predetermined filling time elapses in step S89, and when the predetermined filling time elapses, the control unit 7 executes step S90. In step S<b>90 , the liquid supply control unit 112 starts circulation control of the processing liquid 43 . The circulation of the processing liquid 43 is controlled by continuing to drive the supply pump 52 to control the processing liquid supply unit 44 so that the processing liquid 43 overflowing from the processing tank 41 into the outer tank 42 is circulated to the lower part of the processing tank 41. including doing In the circulation control, the liquid supply control unit 112 controls the processing liquid supply unit 44 so as to adjust the opening of the pure water flow rate regulator 48 according to the concentration of the processing liquid 43 detected by the concentration sensor 58. You can do what you do.

Next, the control section 7 executes step S91. In step S91, the gas supply control unit 115 closes the supply valve 92 so as to stop the gas supply. Next, the control section 7 executes step S92. In step S92, the depressurization control unit 116 opens the open valve 96 so that the gas supply line 93 is depressurized and the processing liquid 43 in the processing tank 41 is drawn into the gas supply line 93 (see FIG. 12(e)). . Next, the control section 7 executes step S93. In step S93, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether or not a predetermined gas stop/open time has elapsed since the gas supply was stopped and the release valve 96 was opened. The predetermined gas stop release time is a time during which a sufficient amount of the processing liquid 43 is drawn up to a predetermined height of the gas supply line 93 . When the processing liquid 43 is drawn into the gas supply line 93 , the processing liquid is sucked into at least the gas nozzle 70 .

The process of step S93 is repeatedly executed until a predetermined gas stop open time elapses in step S93, and when the predetermined gas stop open time elapses, the controller 7 executes step S94. In step S94, the pressure reduction control unit 116 closes the open valve 96 (see FIG. 12(f)). Next, the control section 7 executes step S95. In step S95, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether or not a predetermined cleaning time has elapsed since the open valve 96 was closed. The predetermined cleaning time is set so that the processing liquid 43 sucked into the gas nozzle 70 sufficiently cleans the gas nozzle 70 .

The process of step S95 is repeatedly executed until a predetermined cleaning time elapses in step S95, and when the predetermined cleaning time elapses, the controller 7 executes step S96. At step S<b>96 , the pressure reduction control unit 116 opens the release valve 96 . Next, the control section 7 executes step S97. In step S97, the gas supply control unit 115 opens the supply valve 92 so that gas is supplied to the open line 97 (see FIG. 12(g)).

Next, the control section 7 executes step S98. In step S98, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether or not a predetermined open line supply time has elapsed since gas supply to the open line 97 was started in step S97. be. The predetermined open line supply time is, for example, a time period for supplying a sufficient amount of gas to remove water droplets, steam, etc. accumulated in the open line 97 from the open line 97, and is set to, for example, about 10 seconds.

In step S98, the process of step S98 is repeatedly executed until a predetermined open line supply time elapses, and when the predetermined open line supply time elapses, the control unit 7 executes step S99. In step S99, the pressure reduction control unit 116 closes the release valve 96 (see FIG. 12(h)). As a result, the gas supplied from the gas supply unit 90 flows toward the gas nozzle 70 without flowing into the open line 97 . The above step S8 is completed.

(Idle processing procedure)
Next, detailed procedures of the idle processing control in steps S5 and S9 will be described with reference to FIG. As shown in FIG. 8, the control unit 7 first executes step S101. In step S<b>101 , based on the processing schedule of the recipe stored in the recipe storage unit 111 , it is determined whether or not the preceding stage processing was lot processing. In this process, when the preceding process is a lot process, the process liquid is more contaminated than when the preceding process is not a lot process. In detail, it does not actively pull in) and is going to do control.

In step S101, when the pre-processing is lot processing, the control unit 7 executes step S102. In step S102, the controller 7 performs the first idle control, which is one mode of the first control, assuming that the idle period is the first idle period. On the other hand, in step S101, if the pre-processing is not lot processing (specifically, if the pre-processing is liquid exchange processing), the control unit 7 executes step S103. In step S103, the control unit 7 performs the second idle control, which is one aspect of the first control, assuming that the idle period is the second idle period.

Next, a detailed procedure of the first idle control (control of the first idle process in the first idle period which is the idle period when the preceding stage process is the lot process) in step S102 will be described with reference to FIG. . As shown in FIG. 9, the controller 7 first executes step S201. In step S201, the gas supply control unit 115 closes the supply valve 92 so as to stop gas supply. Next, the control section 7 executes step S202. In step S202, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether or not a predetermined gas supply stop time has elapsed since the gas supply was stopped. The predetermined gas supply stop time is set to a time sufficient for the upward flow in the processing tank 41 that was formed when the gas was being supplied to weaken. This makes it difficult for the processing liquid to flow in the processing bath 41, so that it is possible to suppress the formation of crystals at specific locations (the rim of the opening of the gas nozzle 70, etc.).

Next, the control section 7 executes step S203. At step S<b>203 , the pressure reduction control unit 116 opens the release valve 96 . Next, the control unit 7 executes step S204. In step S<b>204 , the gas supply control unit 115 opens the supply valve 92 so that gas is supplied to the open line 97 .

Next, the control unit 7 executes step S205. In step S205, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether or not a predetermined open line supply time has elapsed since gas supply to the open line 97 was started in step S204. be. The predetermined open line supply time is, for example, a time period for supplying a sufficient amount of gas to remove water droplets, steam, etc. accumulated in the open line 97 from the open line 97, and is set to, for example, about 10 seconds.

In step S205, the process of step S205 is repeatedly executed until a predetermined open line supply time elapses, and when the predetermined open line supply time elapses, the control unit 7 executes step S206. At step S<b>206 , the pressure reduction control unit 116 closes the open valve 96 . As a result, the gas supplied from the gas supply unit 90 flows toward the gas nozzle 70 without flowing into the open line 97 . The gas is discharged from the opening of the gas nozzle 70 , bubbles the processing liquid 43 in the processing tank 41 , and causes an upward flow of the processing liquid 43 in the processing tank 41 .

Next, the control unit 7 executes step S207. In step S207, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether or not a predetermined nozzle supply time has elapsed since gas supply to the gas nozzle 70 was started. The predetermined nozzle supply time is set to a sufficient time for bubbling the processing liquid in the processing tank 41 and generating an upward flow of the processing liquid 43 in the processing tank 41 .

In step S207, the process of step S207 is repeatedly executed until a predetermined nozzle supply time elapses, and when the predetermined nozzle supply time elapses, the control unit 7 executes step S208. In step S208, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether or not the time until the start of the next processing is equal to or shorter than the second time related to idle processing. The second time for idle processing is a time obtained by adding a predetermined buffer to the shortest time for idle processing.

If it is determined in step S208 that the time until the start of the next process is not equal to or less than the second time (that is, the processes of steps S201 to S208 of the first idle process are repeated before the start of the next process), the control unit 7 performs the processing from step S201 again. On the other hand, if it is determined in step S208 that the time until the start of the next process is the second time or less (that is, the next process is performed without intervening the first idle process again), the control unit 7 Step S209 is executed. In step S209, the gas supply control unit 115 closes the supply valve 92 so as to stop the gas supply. Next, the control section 7 executes step S210. At step S<b>210 , the pressure reduction control unit 116 opens the release valve 96 . The above step S102 is completed.

Next, FIG. 10 and FIG. 10 show detailed procedures of the second idle control (control of the second idle process during the second idle period, which is the idle period when the preceding stage process is not the lot process but the liquid exchange process) in step S103. Description will be made with reference to FIG. As shown in FIG. 10, the controller 7 first executes step S301. In step S301, the gas supply control unit 115 closes the supply valve 92 so as to stop gas supply. Next, the control section 7 executes step S302. At step S<b>302 , the pressure reduction control unit 116 opens the release valve 96 . As a result, the pressure in the gas supply line 93 is reduced, and the drawing of the processing liquid 43 into the gas supply line 93 is started (see FIG. 13(a)). In this way, during a part of the idle period, the gas supply unit 90 is controlled so as to stop the gas supply, and the decompression unit 95 is controlled so that the processing liquid 43 is drawn into the gas supply line 93. This is the first control.

Next, the control section 7 executes step S303. In step S303, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether or not a predetermined gas stop/open time has elapsed since the gas supply was stopped and the release valve 96 was opened. The predetermined gas stop release time is a time during which a sufficient amount of the processing liquid 43 is drawn up to a predetermined height of the gas supply line 93 . In step S303, the processing of step S303 is repeatedly executed until a predetermined gas stop open time elapses, and when the predetermined gas stop open time elapses, the control unit 7 executes step S304. In step S304, the gas supply control unit 115 opens the supply valve 92 so that gas is supplied to the open line 97 (see FIG. 13(b)). The second control is the control in which the gas supply unit 90 is controlled so that the gas is supplied in this way. More specifically, the control in which the decompression unit 95 is controlled such that the gas flowing through the gas supply line 93 flows into the open line 97 is the third control of the second control.

Next, the control section 7 executes step S305. In step S305, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether or not a predetermined open line supply time has elapsed after gas supply to the open line 97 was started in step S304. be. The predetermined open line supply time is, for example, a time period for supplying a sufficient amount of gas to remove water droplets, steam, etc. accumulated in the open line 97 from the open line 97, and is set to, for example, about 10 seconds.

In step S305, the process of step S305 is repeatedly executed until a predetermined open line supply time elapses, and when the predetermined open line supply time elapses, the control unit 7 executes step S306. In step S306, the pressure reduction control unit 116 closes the release valve 96 (see FIG. 13(c)). As a result, the gas supplied from the gas supply unit 90 flows toward the gas nozzle 70 without flowing into the open line 97 . The control in which the decompression unit 95 is controlled such that the gas flowing through the gas supply line 93 flows toward the gas nozzle 70 is the fourth control of the second control.

Here, as the above-described fourth control, the control unit 7 controls the gas supply unit 90 so that, in principle, all of the processing liquid 43 drawn into the gas supply line 93 flows into the processing bath 41; and a sixth control for controlling the gas supply unit 90 such that the processing liquid 43 drawn into the gas supply line 93 oscillates within the gas supply line 93 . In the fifth control, gas is discharged from the opening of the gas nozzle 70 to bubble the processing liquid 43 in the processing bath 41 and cause an upward flow of the processing liquid 43 in the processing bath 41 . In the sixth control, in principle, the processing liquid 43 in the gas supply line 93 is swung within the gas supply line 93 without being flowed into the processing bath 41 . For example, after repeating the sixth control of swinging the processing liquid 43 in the gas supply line a plurality of times, the control unit 7 performs the fifth control of flowing the processing liquid 43 drawn into the gas supply line 93 into the processing tank 41 . conduct. The gas supply control unit 115, for example, adjusts the flow controller 91b so that the gas supply amount in the fifth control is larger than the gas supply amount in the sixth control. Also, the gas supply control unit 115 adjusts the flow controller 91b (or the supply valve 92) so that, for example, the gas supply time in the fifth control is longer than the gas supply time in the sixth control.

Next, the control section 7 executes step S307. In step S307, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether or not a predetermined nozzle supply time has elapsed since gas supply to the gas nozzle 70 was started. The predetermined nozzle supply time is set to a sufficient time for bubbling the processing liquid in the processing tank 41 and generating an upward flow of the processing liquid 43 in the processing tank 41 . Also, the predetermined nozzle supply time is, for example, a time sufficient for the fifth control to be performed after the sixth control is repeated multiple times.

In step S307, the process of step S307 is repeatedly executed until a predetermined nozzle supply time elapses, and when the predetermined nozzle supply time elapses, the controller 7 executes step S308. In step S308, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether or not the time until the start of the next processing is equal to or shorter than the second time related to idle processing. The second time for idle processing is a time obtained by adding a predetermined buffer to the shortest time for idle processing.

If it is determined in step S308 that the time until the start of the next process is not equal to or less than the second time (that is, the processes of steps S301 to S308 of the second idle process are repeated before the start of the next process), the control unit 7 performs the processing from step S301 again. On the other hand, if it is determined in step S308 that the time until the start of the next process is the second time or less (that is, the next process is performed without intervening the second idle process again), the control unit 7 Step S309 is executed. In step S309, the gas supply control unit 115 closes the supply valve 92 so as to stop the gas supply. Next, the control section 7 executes step S310. In step S310, the pressure reduction control unit 116 opens the release valve 96 (see FIG. 13(d)). The above step S103 is completed.

[Effect of this embodiment]
As described above, the substrate liquid processing apparatus A1 includes the processing tank 41 containing the processing liquid 43 and the substrate 8, the gas nozzle 70 for discharging gas to the lower part of the processing tank 41, and the gas supply section for supplying the gas. 90, a gas supply line 93 that connects the gas nozzle 70 and the gas supply section 90, a decompression section 95 that draws the processing solution 43 in the processing tank 41 into the gas supply line 93 by reducing the pressure of the gas supply line 93, and a processing tank. During a part of the idle period in which the substrate 8 is not accommodated in 41 , the gas supply unit 90 is controlled so as to stop the gas supply, and the decompression unit 95 is operated so that the processing liquid 43 is drawn into the gas supply line 93 . and a controller 7 configured to perform a first control.

In the substrate liquid processing apparatus A1, the gas supply to the gas nozzle 70 is stopped and the pressure in the gas supply line 93 is reduced during a part of the idle period, so that the processing liquid 43 in the processing bath 41 is drawn into the gas supply line 93. be In the processing tank 41 in which the substrates 8 are processed, gas is normally supplied from a gas nozzle 70 provided at the bottom in order to keep the state of the processing liquid 43 uniform. By supplying the gas, an upward flow of the processing liquid 43 in the processing tank 41 is stably formed. Although this makes it easy to keep the state of the processing liquid 43 uniform, it is likely that the processing liquid 43 will stagnate due to the gas flow at a specific location. Specifically, the stagnation of the processing liquid 43 due to the turbulence of the gas flow tends to occur at the edge of the opening of the gas nozzle 70 . For this reason, crystals such as components eluted from the substrate 8 and various pipes may occur at the edge of the opening of the gas nozzle 70, and these crystals may hinder gas ejection. In this regard, in the substrate liquid processing apparatus A1 according to the present embodiment, the gas supply is stopped and the processing liquid 43 is drawn into the gas supply line 93 during a part of the idle period in which the substrate processing is not performed. . Stopping the gas supply makes it difficult for the processing liquid to flow in the processing tank 41 as described above, so that it is possible to suppress the formation of crystals at specific locations (the rim of the opening of the gas nozzle 70, etc.). As the processing liquid 43 is drawn into the gas supply line 93 , the crystals present at the edge of the opening of the gas nozzle 70 are drawn into the gas supply line 93 together with the processing liquid 43 . As a result, the crystals are removed from the edge of the opening of the gas nozzle 70, and the gas can be properly discharged from the gas nozzle 70. FIG.

With reference to FIG. 14, an example of the process flow of the substrate liquid processing apparatus A1 will be described while comparing with the process flow of the substrate liquid processing apparatus according to the comparative example. FIG. 14A shows an example of the processing flow of the substrate liquid processing apparatus according to the comparative example. FIG. 14B shows an example of the processing flow of the substrate liquid processing apparatus A1 according to this embodiment. In any case, the idle period from time t1 to t3, the lot processing period from time t3 to t4, the processing liquid replacement period from time t4 to t6, and the idle period from time t6 to t7 are shown in this order in chronological order. there is For example, in the processing of the substrate liquid processing apparatus according to the comparative example of FIG. 14(a), N2 gas is constantly supplied during the idle period from time t1 to t3 and the idle period from time t6 to t7. there is On the other hand, in the processing of the substrate liquid processing apparatus A1 according to the present embodiment shown in FIG. 14B, the N2 gas is not supplied ( gas supply is stopped). Specifically, in the idle period from time t1 to t3, N2 gas is not supplied until time t2 before the start of the lot processing period. Further, during the idle period from time t6 to t7, periods in which the N2 gas is supplied and periods in which the N2 gas is not supplied (intervals) are alternately repeated. As described above, conventionally, the gas is always supplied during the idle period as in the processing of the substrate liquid processing apparatus according to the comparative example, whereas in the processing of the substrate liquid processing apparatus A1 of the present embodiment, the gas is always supplied. Since the gas supply is stopped during a portion of the idle draft, the flow of the processing solution 43 in the processing tank 41 becomes difficult, as described above, and crystals are generated at the rim of the opening of the gas nozzle 70 and the like. can be suppressed.

14, in the substrate liquid processing apparatus A1, the control unit 7 stops the gas supply and draws the processing liquid 43 into the gas supply line 93 during the idle period. The first control and the second control for controlling the gas supply unit 90 to supply gas are alternately and repeatedly executed (see the idle period from time t6 to t7 in FIG. 14(b)). By supplying the gas in the second control, the state of the processing liquid 43 can be kept uniform. Further, the first control in which the gas supply is stopped and the processing liquid 43 is drawn in and the second control in which the gas is supplied are alternately and repeatedly executed, whereby the crystal-containing processing liquid drawn in in the first control is repeatedly executed. 43 can be flowed into, for example, treatment bath 41 in a second control. By returning the drawn crystals into the processing liquid in the processing bath 41 in this way, the crystals can be removed more reliably.

Further, the substrate liquid processing apparatus A1 further includes an open line 97 for releasing the gas flowing through the gas supply line 93 to the atmosphere. 96 is opened to reduce the pressure in the gas supply line 93, and the control unit 7 operates the gas supply unit 90 so as to supply gas as a second control in a state where the processing liquid 43 is drawn into the gas supply line 93. A third control that controls the decompression unit 95 so that the open valve 96 opens and the gas flowing through the gas supply line 93 flows into the open line 97, and the gas supply unit 90 is controlled so that the gas is supplied. At the same time, a fourth control is executed to control the decompression unit 95 so that the open valve 96 closes and the gas flowing through the gas supply line 93 flows toward the gas nozzle 70 . Water droplets or the like may accumulate in the open line 97 connected to the gas supply line 93 due to drawing of the processing liquid 43 or the like. In the third control, the water droplets or the like can be removed by flowing the gas into the open line 97, thereby suppressing the water droplets or the like from flowing into the gas supply line 93 (and further into the processing tank 41). be able to. Further, the gas flows to the gas nozzle 70 side in the fourth control, so that, for example, when the gas is discharged from the gas nozzle 70, the state of the processing liquid 43 can be kept uniform by supplying the gas.

Note that the process of removing water droplets or the like from the open line 97 (the same process as the above-described third control) can also be performed during the cleaning period of the process liquid replacement period (for example, the cleaning period from time t5 to t6 in FIG. 14(b)). may be implemented. That is, in the substrate liquid processing apparatus A1, as shown in steps S95 to S98 of FIG. 7 and FIG. etc. have been removed. This process is a process that has not been performed in a conventional substrate liquid processing apparatus (for example, the substrate liquid processing apparatus according to the comparative example shown in FIG. 14A).

In the substrate liquid processing apparatus A1, the control unit 7 controls the gas supply unit 90 so that the processing liquid 43 drawn into the gas supply line 93 flows into the processing bath 41 as the fourth control. and a sixth control for controlling the gas supply unit 90 such that the processing liquid 43 drawn into the gas supply line 93 oscillates within the gas supply line 93 . In the fifth control, the processing liquid 43 drawn into the processing bath 41 is poured into the processing bath 41, thereby appropriately generating an upward flow of the processing liquid 43 while properly removing the crystals. In the sixth control, the gas is supplied so that the processing liquid 43 oscillates (that is, the processing liquid 43 is not completely discharged from the gas supply line 93), thereby moistening the ejection portion of the gas nozzle 70. You can keep it flat. As a result, it is possible to suppress the formation of crystals around the ejection portion of the gas nozzle 70 (edge of the opening of the gas nozzle 70).

Further, the idle period includes a first idle period transitioning from a lot processing period (substrate processing period) in which the substrates 8 are processed in the processing tank 41, and a processing liquid exchange period in which the processing liquid 43 is exchanged in the processing tank 41. There is a second idle period that transitions from the period, and the control unit 7 draws the treatment liquid 43 more in the first control in the second idle period than in the first idle control, which is the first control in the first idle period. The decompression unit 95 is controlled so that the amount of the treatment liquid 43 drawn in during certain second idle control increases. Generally, the processing liquid after substrate processing is often in a dirty state, so it is not preferable to draw in a large amount of the processing liquid 43 during idle processing after lot processing. In this regard, since the amount of the processing liquid 43 drawn in during the second idle control is made larger than the amount of the processing liquid 43 drawn in in the first idle control, the dirty processing liquid 43 after the substrate processing is discharged from the gas supply line. It is possible to suppress a large amount of being drawn into 93 .

Although the embodiments have been described above, the present disclosure is not limited to the above embodiments. For example, the substrate liquid processing apparatus A1 has been described as including the cleaning processing apparatus 1 using the processing liquid 43 such as SC-1, but is not limited to this, and includes cleaning processing apparatuses or etching apparatuses using other various processing liquids. can be anything.

Although the configuration of the decompression unit 95 that decompresses the gas supply line 93 by opening to the atmosphere has been exemplified, the decompression unit is not limited to this, and any configuration is possible as long as the decompression unit can decompress the gas supply line. may be

Further, the control unit 7 controls that during at least a part of the processing liquid exchange period during which the processing liquid is exchanged in the processing bath 41, the processing time is longer than the lot period (substrate processing period) during which the substrate 8 is processed in the processing bath 41. High flow rate control may be performed to control the gas supply unit 90 so that the amount of gas discharged from the gas nozzle 70 is increased. In the high flow rate control, the gas supply unit 90 is controlled so that the gas nozzle 70 discharges gas at a rate of about 5 to 6 times the normal gas discharge amount, for example. The control unit 7 may execute the above-described high flow rate control during the cleaning period after the new treatment liquid is supplied during the treatment liquid replacement period. More specifically, the control unit 7 may perform the high flow rate control after starting the temperature increase control for increasing the temperature of the new processing liquid during the cleaning period. Furthermore, the control unit 7 may monitor the pressure value of the gas nozzle 70 during execution of the high flow rate control, and when the pressure value of the gas nozzle 70 exceeds a predetermined value, it is estimated that the gas nozzle 70 is clogged. Then, various treatments in the treatment tank 41 may be finished.

FIGS. 15A and 15B are explanatory diagrams of gas ejection from the gas nozzle 70 in each process, FIG. 15A being a comparative example, and FIG. 15B being an explanatory diagram of an example. As shown in FIG. 15A, in the comparative example, in the lot processing during the lot period, loading of the substrate 8 (wafer transportation), processing of the substrate 8 (wafer processing), and unloading of the substrate 8 (wafer transportation) are performed. The gas supply unit 90 is controlled such that a small amount of gas is discharged from the gas nozzle 70 in each process. In addition, during the process liquid replacement period between lot periods, the gas supply unit 90 is controlled so that a small amount of gas is discharged from the gas nozzle 70 during the liquid replacement process (drainage and filling of the process liquid), and during the subsequent cleaning period. (Described as "Vent" and "Immersion" in FIG. 15A), the gas supply unit 90 is controlled so as to stop the gas supply. In this respect, as shown in FIG. 15(b), the processing liquid replacement period in the embodiment is a cleaning period after a new processing liquid is supplied by the liquid replacement process. During the temperature control period (described as "waiting for temperature rise" in FIG. 15(b)) and during the subsequent pressure monitoring engine (described as "pressure monitoring" in FIG. 15(b)), during lot processing The gas supply unit 90 is controlled such that a large amount of gas is discharged from the gas nozzle 70 rather than a small amount of gas. As described above, in the embodiment shown in FIG. 15B, the controller 7 causes the gas nozzle 70 to discharge more gas during the cleaning period of the processing liquid replacement period than during the lot period (substrate processing period). High flow rate control for controlling the gas supply unit 90 is performed as described above.

FIG. 16 is a flow chart of high flow rate control during the above-described processing liquid replacement period. It should be noted that FIG. 16 only shows the processing up to the end of the high flow rate control during the processing liquid replacement period. As shown in FIG. 16, in the processing liquid replacement period, first, the control unit 7 controls the processing liquid discharge unit 67 so that discharge of the processing liquid from the processing tank 41 is started (step S501). Subsequently, the control unit 7 determines whether or not a predetermined liquid drainage time has elapsed (step S502). is started (step S503). Subsequently, the control unit 7 determines whether or not a predetermined filling time has passed (step S504), and when it is determined that the filling time has passed, the temperature of the treatment liquid starts to rise. , controls a heating mechanism (not shown) (step S505).

At the start of step S505 (or shortly after the start), the controller 7 starts high flow rate control (step S506). Specifically, the controller 7 opens the supply valve 92 so that gas supply to the gas supply line 93 is started. At this time, the controller 7 opens the supply valve 92 so that the amount of gas discharged from the gas nozzle 70 is greater than during the lot period (substrate processing period).

Subsequently, the control unit 7 determines whether or not a predetermined temperature increase time has elapsed (step S507). pressure monitoring is started (step S508). The control unit 7 acquires the pressure of the gas nozzle 70 measured by a pressure gauge (not shown), and determines whether or not the pressure value is smaller than a predetermined value (step S509). If it is determined in step S509 that the pressure value exceeds the predetermined value, the control section 7 terminates all processing. On the other hand, when determining that the pressure value is smaller than the predetermined value, the control unit 7 determines whether or not a predetermined pressure monitoring time has elapsed (step S510). The high flow rate control ends (step S511).

Next, the effects of performing the high flow rate control described above will be described. FIG. 20 is a side view (schematic diagram) of the gas nozzle 70 . 21 is an enlarged view of the gas nozzle 70 shown in FIG. 20. FIG. 22A and 22B are diagrams showing the mechanism of crystallization in the gas nozzle 70, in which (a) is the state before crystallization, (b) is the state during crystallization, and (c) is the clogged state of the gas nozzle 70 after crystallization. It is a figure which shows.

As shown in FIG. 20 , the plurality of gas nozzles 70 are arranged side by side in the extending direction of the supply pipe 550 extending in the depth direction of the processing bath 41 when viewed from the side direction of the processing bath 41 . Each gas nozzle 70 is connected to a supply pipe 550, and inert gas (for example, N2 gas supplied to the gas supply section 90) flowing through the supply pipe 550 flows in and discharges the inert gas. As shown in FIG. 21, the gas nozzle 70 is formed in a substantially conical shape, and is formed such that the pipe diameter gradually increases downward from the gas inflow point (that is, the discharge port of the gas nozzle 70). there is

As shown in FIG. 22A, the processing liquid flows (reversely flows) into the gas nozzle 70 from the ejection port side. As a result, as shown in FIG. 22(b), silica in the treatment liquid is concentrated at the gas-liquid interface in the gas nozzle 70, and crystallization proceeds by drying. Then, as shown in FIG. 22(c), it is conceivable that clogging occurs inside the gas nozzle 70 due to further progress of crystallization.

In this regard, as described above, the control unit 7 performs high flow rate control to control the gas supply unit 90 so that the amount of gas discharged from the gas nozzle 70 is greater than that during the lot period at least in part of the processing liquid replacement period. running Crystals at the gas-liquid interface of the gas nozzle 70 can be removed by increasing the amount of gas discharged from the gas nozzle 70 .

As described above, the control unit 7 executes the above-described high flow rate control during the cleaning period after the new treatment liquid is supplied during the treatment liquid replacement period. More specifically, the control unit 7 executes the high flow rate control after starting the temperature increase control for increasing the temperature of the new processing liquid during the cleaning period. By controlling the high flow rate during the cleaning period in this way, it is not necessary to provide a separate processing period for the high flow rate control, and crystals can be removed without lowering the processing efficiency.

The control unit 7 monitors the pressure value of the gas nozzle 70 during execution of the high flow rate control, and when the pressure value exceeds a predetermined value, it is estimated that the gas nozzle 70 is clogged, and various processes in the processing tank 41 are performed. is finished. By monitoring the pressure value during high flow rate control, it is possible to more appropriately grasp the pressure change (that is, the tendency of clogging) of the gas nozzle 70 . By estimating that the gas nozzle 70 is clogged when the pressure value becomes higher than a predetermined value and ending the processing, it is possible to end processing such as lot processing at the optimum timing.

As shown in FIG. 17, the substrate liquid processing apparatus A1 may further include an imaging unit 700 provided at a position capable of capturing an image of the processing liquid in the processing bath 41 . The imaging unit 700 may be any device capable of imaging the boiling state of the processing tank 41 (phosphoric acid tank), such as a high-speed camera. The imaging unit 700 may be provided above the processing tank 41, for example. The imaging unit 700 continuously captures images of the processing liquid in the processing tank 41 at regular intervals and outputs the captured images to the control unit 7 .

The control unit 7 identifies the boiling state of the treatment liquid based on the image captured by the imaging unit 700 . The control unit 7 identifies (estimates) the number of bubbles in the treatment liquid based on, for example, an image captured by the imaging unit 700, and identifies the boiling state based on the number of bubbles. The control unit 7 may specify (estimate) the number of bubbles in each of a plurality of images captured by the imaging unit 700 in a predetermined period, and specify the boiling state based on the number of bubbles in each of the plurality of images. The plurality of images here means, for example, several tens to several hundreds of images. FIG. 18 is a graph showing the frequency distribution of the number of bubbles (the number of bubbles). The control unit 7 specifies the number of bubbles in each image, derives the number (frequency) of images having the same number of bubbles, and derives a frequency distribution as shown in FIG. For example, the control unit 7 may estimate the number of bubbles with the highest frequency as the current number of bubbles in the treatment liquid, and identify the boiling state of the treatment liquid from the number of bubbles.

FIG. 19 is a diagram showing the relationship between the number of bubbles and the boiling state. As shown in FIG. 19, the estimated range of the number of bubbles (for example, the number of bubbles with the highest frequency) and the boiling state are associated in advance, and the boiling state is "non-boiling" and "weak boiling" in descending order of the number of bubbles. It can be divided into "proper boiling", "strong boiling" and "overboiling". "Non-boiling" means, for example, a state in which bubbles are not generated and the surface of the liquid is not rippling and is calm. "Weak boiling" means, for example, a state in which the generation of air bubbles can be visually confirmed, but there is almost no ripple on the surface of the liquid. "Proper boiling" is a state in which a large number of small bubbles are generated and ripples on the liquid surface can be visually confirmed. "Strong boiling" is a state in which a large number of large bubbles are generated and the liquid surface is greatly wavy. "Overboiling" is a state in which a large number of large bubbles are generated, the liquid surface violently waves, and boiling over occurs. Then, the controller 7 adjusts the concentration of the treatment liquid based on the boiling state. When the concentration of the processing liquid is low, the boiling state becomes strong. Therefore, when the boiling state is strong, for example, the control unit 7 adjusts the concentration of the processing liquid so that it becomes high. The control unit 7 repeatedly executes identification of the boiling state (and adjustment of the concentration of the treatment liquid based on the boiling state) at predetermined intervals.

Details of an example of the method of controlling the boiling state by the image analysis described above will be described below. The captured images are captured in a PC and stored in a database. The boiling state is determined for these images using image processing software. Then, when there is a deviation from the reference boiling state (when the boiling state is changed from the reference boiling state), change amount feedback processing (processing to return the changed concentration to a predetermined range) is performed, and the boiling state of the treatment liquid is changed. maintained constant. In processing using image processing software, first, a differential image is created between the imaged bubble image and the background image (single-phase water flow image). As a result, a new image (difference image) can be created by taking the absolute value of the difference in pixel luminance value (brightness per unit area) at the same position in the image. In the differential image, portions other than bubbles are removed. Next, a median filter is applied to the differential image to remove fine noise (that is, to remove noise other than brightness that seems to be air bubbles). Subsequently, binarization processing is performed to extract only bubbles from the image and count the number of bubbles. Bubbles with a bubble diameter of a predetermined value or less (for example, 0.4 mm or less) may be excluded from measurement targets in order to avoid deterioration of measurement accuracy. Such processing is performed for each image, and the number (frequency) of images having the same number of bubbles is derived and used as the measurement result. Subsequently, the current boiling state is determined by collating the measurement result with the number of bubbles in each boiling state stored in the database (see FIG. 19). As the measurement result, the number of bubbles with the highest frequency may be used as described above, or the maximum number of bubbles may be used. If the boiling state is changed from the standard boiling state, the boiling state is adjusted by feeding back the amount of change to the concentration.

As described above, the substrate liquid processing apparatus A1 further includes the imaging unit 700 provided at a position capable of imaging the processing liquid in the processing bath 41, whereby the state of the processing liquid in the processing bath 41 (for example, boiling state) can be easily grasped, and adjustment of the processing liquid (for example, concentration adjustment of the processing liquid) can be easily and reliably performed according to the state of the processing liquid.

Also, the control unit 7 identifies the boiling state of the treatment liquid based on the image captured by the imaging unit 700 . As a method for identifying the boiling state, a method using a sensor such as a water head pressure sensor is conceivable. However, it is difficult to accurately grasp the boiling state of the sensor because individual differences and variations in adjustment are likely to occur. In this respect, by specifying the boiling state of the treatment liquid from the image captured by the imaging unit 700, it is possible to specify the boiling state of the treatment liquid with high accuracy, as in the case of actually visually observing. The controller 7 estimates the number of bubbles in the treatment liquid based on the image, and identifies the boiling state based on the number of bubbles. Since the number of bubbles and the boiling state are closely related, the boiling state can be identified with higher accuracy by the method described above. In addition, the control unit 7 estimates the number of bubbles in each of the plurality of images, and specifies the boiling state based on the number of bubbles in each of the plurality of images. For example, when specifying the boiling state from only one image , the boiling state can be identified with higher accuracy.

In addition, the control unit 7 can adjust the concentration of the processing liquid within a desired range by a simple method by adjusting the concentration of the processing liquid based on the boiling state. The control unit 7 can continuously perform processing such as concentration adjustment based on the boiling state by repeatedly executing the determination of the boiling state at predetermined intervals. In addition, since the imaging unit 700 is provided above the processing tank 41, it becomes easier to identify bubbles in the processing liquid, and the boiling state can be identified with higher accuracy.

A1 Substrate liquid processing apparatus 7 Control unit 8 Substrate 41 Processing tank 43 Processing liquid 70 Gas nozzle 90 Gas supply unit 93 Gas supply line 95 Decompression unit 96 Open Valve (Valve), 97... open line. 700... Imaging unit.

Claims (7)

a processing tank containing a processing liquid and a substrate;
an imaging unit provided above the processing bath at a position where the boiling state of the processing liquid in the processing bath can be imaged;
a control unit that identifies the boiling state of the treatment liquid based on the image captured by the imaging unit, and adjusts the concentration of the treatment liquid based on the identified boiling state;
The control unit estimates the number of bubbles in each of a plurality of images captured by the imaging unit in a predetermined period, and information in which the estimated number of bubbles is associated with the range of the number of bubbles and a category indicating a boiling state. The substrate liquid processing apparatus specifies a section indicating the boiling state according to the estimated number of bubbles, based on the above. The control unit
For the plurality of images captured and captured by the imaging unit, image processing software is used to identify the boiling state,
2. The substrate liquid processing according to claim 1, wherein, when the specified boiling state deviates from a reference boiling state, feedback processing is performed so as to reduce the deviation to keep the concentration of the processing liquid constant. Device. The control unit generates a difference image between the image captured by the imaging unit and the water single-phase flow image that is the background image, and identifies the boiling state of the treatment liquid based on the difference image. 3. A substrate liquid processing apparatus according to claim 1 or 2. 4. The substrate liquid processing apparatus according to claim 3, wherein said control unit applies a median filter to said differential image to remove noise. 5. The substrate liquid processing apparatus according to claim 4, wherein said control unit performs binarization processing on said difference image from which noise has been removed, extracts only bubbles from the image, and estimates the number of bubbles. A substrate liquid processing method performed by a substrate liquid processing apparatus, comprising:
capturing an image of the processing liquid in the processing bath containing the processing liquid and the substrate from above the processing bath, which is a position at which the boiling state of the processing liquid can be captured ;
estimating the number of bubbles in each of a plurality of images captured over a predetermined period of time;
Identifying a category indicating the boiling state according to the estimated number of bubbles based on the estimated number of bubbles and information in which the range of the number of bubbles and the category indicating the boiling state are associated;
and adjusting the concentration of the processing liquid based on the specified boiling state. A computer-readable storage medium storing a program for causing an apparatus to execute the substrate liquid processing method according to claim 6.

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