JP2019050349A - Substrate liquid processing apparatus, substrate liquid processing method and storage medium - Google Patents

Abstract

To provide a substrate liquid processing apparatus that is effective in suppressing generation of a crystal or removing the crystal.SOLUTION: A substrate liquid processing apparatus A1 comprises: a processing tank 41 that contains a processing liquid 43 and a substrate 8; a gas nozzle 70 that discharges gas in a lower part within the processing tank 41; a gas supply unit 90 that supplies the gas; a gas supply line 93 that connects the gas nozzle 70 and the gas supply unit 90; a decompression unit 95 that draws the processing liquid 43 in the processing tank 41 into the gas supply line 93 by decompressing the gas supply line 93; and a control unit 7 configured to control the gas supply part 90 such that supplying of the gas is stopped, and execute first control controlling the decompression unit 95 such that the processing liquid 43 is drawn into the gas supply line 93, in a portion of an idle period in which the substrate 8 is not contained in the processing tank 41.SELECTED DRAWING: Figure 2

Description

  The present disclosure relates to a substrate liquid processing apparatus, a substrate liquid processing method, and a storage medium.

  In Patent Document 1, an overflow tank, a pump for circulating an etching solution (processing liquid) in the tank, a heater for heating the processing liquid in the tank to a constant temperature, a temperature controller for controlling the temperature, and an inside of the tank A processing apparatus is disclosed that includes a frame for fixing a cassette of wafers to a dispersion plate provided in the bottom of the container, and a bubbler for bubbling the processing solution in the tank with nitrogen.

Japanese Patent Application Laid-Open No. 07-58078

  Gas, such as nitrogen, used for the above-mentioned bubbling is supplied from the gas nozzle provided in the lower part of a tank. Here, as the gas is supplied from the gas nozzle, an upward flow of the processing liquid occurs in the tank. Although this makes it easy to keep the state of the treatment liquid uniform, it tends to cause the stagnation of the treatment liquid due to the flow of gas at a specific place. Specifically, stagnation of the treatment liquid due to the disturbance of the gas flow is likely to occur at the edge of the opening of the gas nozzle. For this reason, crystals such as components eluted from the substrate and various pipelines may be generated at the edge of the opening of the gas nozzle, and this crystal may be an obstacle to gas discharge.

  Therefore, the present disclosure aims to provide a substrate liquid processing apparatus, a substrate liquid processing method, and a storage medium that are effective in suppressing the generation of crystals or removing the crystals.

  A substrate liquid processing apparatus according to the present disclosure connects a processing tank that contains a processing liquid and a substrate, a gas nozzle that discharges a gas to a lower portion in the processing tank, a gas supply unit that supplies gas, a gas nozzle, and a gas supply unit. The gas supply line, the pressure reduction unit drawing the processing liquid in the treatment tank into the gas supply line by depressurizing the gas supply line, and the supply of gas in part of the idle period when the substrate is not accommodated in the treatment tank. A control unit configured to execute a first control that controls the gas supply unit to stop and controls the pressure reduction unit so that the processing liquid is drawn into the gas supply line.

  According to the present disclosure, it is possible to provide a substrate liquid processing apparatus, a substrate liquid processing method, and a storage medium that are effective in suppressing the generation of crystals or removing the crystals.

It is a top view which shows a substrate liquid processing system typically. It is a schematic diagram of an etching processing apparatus. It is a block diagram which shows the functional structure of a control part. It is a flowchart of a substrate processing procedure. It is a flowchart of the filling procedure of a process liquid. It is a flowchart of a lot processing procedure. It is a flowchart of a liquid exchange process procedure. It is a flowchart of an idle processing procedure. It is a flowchart of the 1st idle control of a 1st idle period. It is a flowchart of the 2nd idle control of the 2nd idle period. It is explanatory drawing of a lot processing procedure. It is explanatory drawing of a liquid exchange treatment procedure. It is explanatory drawing of 2nd idle control. It is explanatory drawing of a substrate processing procedure, (a) is a substrate processing procedure concerning a comparative example, (b) is an explanatory view of a substrate processing procedure concerning this embodiment. It is explanatory drawing about discharge of the gas from the gas nozzle in each process, (a) is a comparative example, (b) is explanatory drawing of an Example. It is a flowchart of high flow rate control. It is a schematic diagram of the etching processing apparatus which concerns on a modification. It is a graph which shows frequency distribution of the number of bubbles. It is a figure which shows the relationship between the number of bubbles, and a boiling state. It is the figure which looked at the gas nozzle from the side. It is an enlarged view of the gas nozzle shown in FIG. It is a figure which shows the mechanism of crystallization in a gas nozzle, (a) is a state before crystallization, (b) is a state in the middle of crystallization, (c) is a figure which shows the state of the gas nozzle of crystallization after crystallization.

  Hereinafter, embodiments will be described in detail with reference to the drawings. In the description, the same elements or elements having the same function are denoted by the same reference numerals, and redundant description will be omitted.

  As shown in FIG. 1, the substrate liquid processing system 1A includes a carrier loading / unloading unit 2, a lot formation unit 3, a lot placement unit 4, a lot conveyance unit 5, a lot processing unit 6, and a control unit 7. Have.

  Among them, the carrier loading / unloading unit 2 carries in / outs the carrier 9 in which a plurality of (for example, 25) substrates (silicon wafers) 8 are vertically aligned and accommodated. The carrier loading / unloading unit 2 includes a carrier stage 10 on which a plurality of carriers 9 are placed, a carrier transport mechanism 11 for transporting the carriers 9, and carrier stocks 12 and 13 for temporarily storing the carriers 9. A carrier mounting table 14 on which the carrier 9 is mounted is provided. Here, the carrier stock 12 temporarily stores the product substrate 8 before being processed by the lot processing unit 6. Further, the carrier stock 13 is temporarily stored after processing the substrate 8 as a product in the lot processing unit 6.

  Then, the carrier loading / unloading unit 2 transports the carrier 9 loaded onto the carrier stage 10 from the outside to the carrier stock 12 or the carrier mounting table 14 using the carrier transport mechanism 11. Further, the carrier loading / unloading unit 2 transports the carrier 9 mounted on the carrier mounting table 14 to the carrier stock 13 or the carrier stage 10 using the carrier transport mechanism 11. The carrier 9 transported to the carrier stage 10 is carried out to the outside.

  The lot formation unit 3 forms a lot consisting of a plurality of (for example, 50) substrates 8 simultaneously processed by combining the substrates 8 accommodated in one or a plurality of carriers 9. When forming a lot, the lot may be formed so that the surfaces on which the pattern is formed on the surface of the substrate 8 face each other, and the surface on which the pattern is formed on the surface of the substrate 8 is The lot may be formed to face all one side. The lot forming unit 3 is provided with a substrate transfer mechanism 15 for transferring a plurality of substrates 8. The substrate transport mechanism 15 can change the posture of the substrate 8 from the horizontal posture to the vertical posture and the vertical posture to the horizontal posture during the conveyance of the substrate 8.

  Then, the lot forming unit 3 transfers the substrate 8 from the carrier 9 mounted on the carrier mounting table 14 to the lot mounting unit 4 using the substrate transfer mechanism 15, and the lot mounting unit forms the substrate 8 for forming a lot. Place on 4. In addition, the lot formation unit 3 transports the lot placed on the lot placement unit 4 to the carrier 9 placed on the carrier placement table 14 by the substrate transfer mechanism 15. The substrate transfer mechanism 15 serves as a substrate support unit for supporting a plurality of substrates 8 and includes a pre-processing substrate support unit that supports the substrate 8 before processing (before being transported by the lot transport unit 5), and There are two types of post-processing substrate supporting portions for supporting the substrate 8 after (after being transported by the lot transport unit 5). This prevents particles and the like adhering to the substrate 8 and the like before processing from being transferred to the substrate 8 and the like after processing.

  The lot placement unit 4 temporarily places (waits) the lot conveyed by the lot conveyance unit 5 between the lot formation unit 3 and the lot processing unit 6 on the lot placement table 16. The lot placement unit 4 includes a loading side lot placement table 17 for placing a lot before processing (before being transported by the lot transport unit 5) and after processing (after being transported by the lot transport unit 5). A delivery side lot placement table 18 for placing a lot is provided. A plurality of substrates 8 for one lot are placed on the loading-side lot placement table 17 and the unloading-side lot placement table 18 in a vertical posture in the front-rear direction. Then, in the lot placement unit 4, the lot formed by the lot formation unit 3 is placed on the loading-side lot placement table 17, and the lot is carried into the lot processing unit 6 via the lot conveyance unit 5. In the lot placement unit 4, the lot unloaded from the lot processing unit 6 via the lot transport unit 5 is placed on the unloading side lot placement table 18, and the lot is transported to the lot formation unit 3.

  The lot transfer unit 5 transfers lots between the lot placement unit 4 and the lot processing unit 6 and between the lot processing unit 6. The lot transfer unit 5 is provided with a lot transfer mechanism 19 for transferring a lot. The lot transfer mechanism 19 includes a rail 20 disposed along the lot placement unit 4 and the lot processing unit 6 and a movable body 21 moving along the rail 20 while holding a plurality of substrates 8. The movable body 21 is provided with a substrate holder 22 which holds a plurality of substrates 8 lined up in front and back in a vertical posture so as to freely advance and retract. Then, the lot transfer unit 5 receives the lot placed on the loading-side lot mounting table 17 by the substrate holder 22 of the lot transfer mechanism 19 and transfers the lot to the lot processing unit 6. Further, the lot transfer unit 5 receives the lot processed by the lot processing unit 6 by the substrate holder 22 of the lot transfer mechanism 19 and transfers the lot to the unloading side lot mounting table 18. Further, the lot transfer unit 5 transfers the lot inside the lot processing unit 6 using the lot transfer mechanism 19.

  The lot processing unit 6 performs processing such as etching, cleaning, drying, etc., with a plurality of substrates 8 lined back and forth in vertical posture as one lot. The lot processing unit 6 includes a drying processing unit 23 for drying the substrate 8, a substrate holder cleaning processing unit 24 for cleaning the substrate holder 22, and a cleaning processing unit 1 for cleaning the substrate 8. And two etching processing apparatuses 26 according to the present invention for etching the substrate 8 are provided side by side.

  The drying processing apparatus 23 has a processing tank 27 and a substrate lifting mechanism 28 provided to be able to move up and down in the processing tank 27. A processing gas for drying (IPA (isopropyl alcohol) or the like) is supplied to the processing tank 27. The substrate lifting mechanism 28 holds a plurality of substrates 8 for one lot side by side in the vertical posture. The drying processing apparatus 23 receives a lot from the substrate holder 22 of the lot transfer mechanism 19 by the substrate lifting mechanism 28 and lifts the lot by the substrate lifting mechanism 28 so that the drying processing gas supplied to the processing tank 27 is used. The substrate 8 is dried. In addition, the drying processing apparatus 23 delivers the lot from the substrate lifting mechanism 28 to the substrate holder 22 of the lot transfer mechanism 19. The substrate holder cleaning processing apparatus 24 has a processing tank 29 and can supply the processing liquid for cleaning and the drying gas to the processing tank 29, and the substrate holder 22 of the lot transfer mechanism 19 can be used for cleaning. After supplying the processing liquid, the cleaning processing of the substrate holder 22 is performed by supplying the drying gas.

  The cleaning processing apparatus 1 includes a processing tank 30 for cleaning and a processing tank 31 for rinsing, and substrate lift mechanisms 32 and 33 are provided in the processing tanks 30 and 31 so as to be able to move up and down. In the processing tank 30 for cleaning, processing liquid (SC-1 etc.) for cleaning is stored. A treatment liquid (such as pure water) for rinse is stored in the treatment tank 31 for rinse. The etching processing apparatus 26 has a processing tank 34 for etching and a processing tank 35 for rinsing, and substrate lifting mechanisms 36 and 37 are provided in the processing tanks 34 and 35 so as to be able to move up and down. A processing solution for etching (phosphoric acid aqueous solution) is stored in the processing tank 34 for etching. The rinse treatment liquid (such as pure water) is stored in the rinse treatment tank 35.

  The cleaning apparatus 1 and the etching apparatus 26 have the same configuration. The cleaning processing apparatus 1 will be described. The substrate lifting mechanism 32 holds a plurality of substrates 8 for one lot side by side in the vertical posture. In the cleaning processing apparatus 1, the substrate lifting mechanism 32 receives a lot from the substrate holder 22 of the lot transfer mechanism 19 and lifts the lot by the substrate lifting mechanism 32 to immerse the lot in the processing liquid for cleaning the processing tank 30. Then, the substrate 8 is cleaned. Thereafter, the cleaning processing apparatus 1 delivers the lot from the substrate lifting mechanism 32 to the substrate holder 22 of the lot transfer mechanism 19. In addition, the substrate lifting mechanism 33 receives a lot from the substrate holder 22 of the lot transfer mechanism 19 and lifts the lot by the substrate lifting mechanism 33 to immerse the lot in the treatment liquid for rinsing the processing tank 31 and thereby the substrate 8. Perform the rinse process. Thereafter, the lot is delivered from the substrate lifting mechanism 33 to the substrate holder 22 of the lot transfer mechanism 19.

  The control unit 7 controls the operation of each unit (carrier transfer in / out unit 2, lot formation unit 3, lot placement unit 4, lot conveyance unit 5, lot processing unit 6, and cleaning processing apparatus 1) of the substrate liquid processing system 1A. . The control unit 7 includes, for example, a computer, and includes a computer readable storage medium 38. The storage medium 38 stores, for example, programs for controlling various processes performed in the cleaning processing apparatus 1. The control unit 7 controls, for example, the operation of the cleaning processing apparatus 1 by reading and executing the program stored in the storage medium 38. The program may be stored in a storage medium 38 readable by a computer, and may be installed in the storage medium 38 of the control unit 7 from another storage medium. Examples of the computer-readable storage medium 38 include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical disk (MO), a memory card, and the like.

[Substrate liquid processing apparatus]
Subsequently, the substrate liquid processing apparatus A1 included in the substrate liquid processing system 1A will be described in detail. As shown in FIGS. 2 and 3, the substrate liquid processing apparatus A1 includes a cleaning processing apparatus 1 and a control unit 7.

(Washing processing equipment)
The cleaning processing apparatus 1 includes a liquid processing unit 40, a processing liquid supply unit 44, a processing liquid discharge unit 67, a plurality of (for example, six) gas nozzles 70, a gas supply unit 90, a gas supply line 93, and pressure reduction. A portion 95 and an open line 97 are provided.

  The liquid processing unit 40 is a part that performs liquid processing (washing processing) on the substrate 8, and includes a processing tank 41, an outer tank 42, and a processing liquid 43. The processing tank 41 accommodates the processing liquid 43 and the substrate 8. As a specific example of the treatment liquid 43, SC-1 can be mentioned. Since the upper portion of the processing tank 41 is open, it is possible to immerse the substrate 8 in the processing liquid 43 in the processing tank 41 from above. In the processing tank 41, the circular board | substrate 8 is arrange | positioned in the state which stood up. Hereinafter, a direction along the substrate 8 in the processing tank 41, which is orthogonal to the height direction, is referred to as “width direction”, and a direction perpendicular to the height direction and the width direction (ie, thickness direction of the substrate 8 in the processing tank 41) It may be described as "depth direction". Of the bottom surface of the processing tank 41, both side portions in the width direction are higher toward the outside. The outer tank 42 is provided so as to surround the processing tank 41, and accommodates the processing liquid 43 overflowing from the processing tank 41.

  The treatment liquid supply unit 44 supplies the treatment liquid 43 into the treatment tank 41. For example, the treatment liquid supply unit 44 includes a treatment liquid supply source 45, a flow rate regulator 46, a pure water supply source 47, a flow rate regulator 48, a treatment liquid circulation unit 49, and a concentration measurement unit 55.

  The treatment liquid supply source 45 supplies the treatment liquid 43 to the outer tank 42. The flow rate regulator 46 is provided in the flow path of the treatment liquid 43 from the treatment liquid supply source 45 to the outer tank 42, and performs opening / closing and opening degree adjustment of the flow path. The pure water supply source 47 supplies pure water to the outer tank 42. The pure water compensates for the water evaporated by the heating of the treatment liquid 43. The flow rate regulator 48 is provided in the flow path of pure water from the pure water supply source 47 to the outer tank 42, and performs opening / closing and adjustment of the opening degree of the flow path.

  The treatment liquid circulating unit 49 sends the treatment liquid 43 in the outer tank 42 to the lower part in the treatment tank 41. For example, the treatment liquid circulation unit 49 has a plurality of (for example, three) treatment liquid nozzles 50, a circulation flow passage 51, a supply pump 52, a filter 53, and a heater 54.

  The treatment liquid nozzle 50 is provided at the lower part in the outer tank 42 and discharges the treatment liquid 43 into the treatment tank 41. The plurality of processing liquid nozzles 50 are arranged in the width direction at the same height and extend in the depth direction. The circulation channel 51 guides the treatment liquid 43 from the outer tank 42 to the plurality of treatment liquid nozzles 50. One end of the circulation channel 51 is connected to the bottom of the outer tank 42. The other end of the circulation flow path 51 is branched into a plurality of lines and connected to the plurality of processing liquid nozzles 50 respectively. The supply pump 52, the filter 53, and the heater 54 are provided in the circulation flow path 51, and are arranged in order from the upstream side (the outer tank 42 side) to the downstream side (the treatment liquid nozzle 50 side). The supply pump 52 pumps the treatment liquid 43 from the upstream side to the downstream side. The filter 53 removes particles mixed in the treatment liquid 43. The heater 54 heats the treatment liquid 43 to a set temperature. The set temperature is set, for example, to a value near the boiling point of the treatment liquid 43.

  The concentration measuring unit 55 measures the concentration of the treatment liquid 43. For example, the concentration measurement unit 55 includes a measurement flow channel 56, on-off valves 57 and 59, a concentration sensor 58, a cleaning fluid supply unit 60, and a cleaning fluid discharge unit 64.

  The measurement flow path 56 branches from the circulation flow path 51 between the heater 54 and the treatment liquid nozzle 50, extracts a part of the treatment liquid 43, and causes the outer tank 42 to reflux. The on-off valves 57 and 59 are arranged in order from the upstream side (the circulation channel 51 side) to the downstream side (the outer tank 42 side) in the measurement channel 56, and respectively open and close the measurement channel 56. The concentration sensor 58 is provided between the on-off valves 57 and 59 in the measurement flow channel 56, and measures the concentration (for example, phosphoric acid concentration) of the processing liquid 43 flowing in the measurement flow channel 56. The cleaning fluid supply unit 60 supplies a cleaning fluid (for example, pure water) to the concentration sensor 58. For example, the cleaning fluid supply unit 60 has a cleaning fluid supply source 61, a supply flow path 62, and an on-off valve 63. The cleaning fluid source 61 is a source of fluid for cleaning. The supply flow path 62 supplies the cleaning fluid from the cleaning fluid supply source 61 to the concentration sensor 58. One end of the supply flow channel 62 is connected to the cleaning fluid supply source 61, and the other end of the supply flow channel 62 is connected between the on-off valve 57 and the concentration sensor 58. The on-off valve 63 opens and closes the supply flow path 62. The cleaning fluid discharger 64 discharges the cleaning fluid. For example, the cleaning fluid discharge unit 64 has a discharge flow path 65 and an on-off valve 66. The discharge channel 65 discharges the cleaning fluid that has passed through the concentration sensor 58. One end of the discharge flow path 65 is connected between the concentration sensor 58 and the on-off valve 59, and the other end of the discharge flow path 65 is connected to the liquid discharge pipe (not shown) of the substrate liquid processing system 1A. There is. The on-off valve 66 opens and closes the discharge passage 65.

  The treatment liquid discharge unit 67 discharges the treatment liquid 43 from the inside of the treatment tank 41. For example, the treatment liquid discharger 67 has a drainage flow path 68 and an on-off valve 69. The drainage channel 68 discharges the treatment liquid 43 in the treatment tank 41. One end of the drainage channel 68 is connected to the bottom of the processing tank 41, and the other end of the drainage channel 68 is connected to the drainage pipe (not shown) of the substrate liquid processing system 1A. The on-off valve 69 opens and closes the drainage channel 68.

  The plurality of gas nozzles 70 discharge an inert gas (for example, N 2 gas) at the lower portion in the processing tank 41. The plurality of gas nozzles 70 are arranged in the width direction below the processing liquid nozzle 50 and extend in the depth direction. The height of each gas nozzle 70 increases as its arrangement position moves away from the widthwise center. The plurality of gas nozzles 70 may be arranged along a circular arc concentric with the substrate 8. The arrangement along the arc includes not only the case where the gas nozzles 70 are located on the arc but also the case where some of the gas nozzles 70 deviate from the arc within a predetermined range. The predetermined range can be set arbitrarily as long as the uniformity of the distance from each gas nozzle 70 to the center of the substrate 8 is higher than when the plurality of gas nozzles 70 are positioned at the same height.

  For example, the plurality of gas nozzles 70 are a pair of gas nozzles 70A located at the innermost side in the width direction, a pair of gas nozzles 70B located outside the pair of gas nozzles 70A, and a pair located further outside the pair of gas nozzles 70B. And the gas nozzle 70C. The gas nozzles 70B and 70B are located above the gas nozzles 70A and 70A, and the gas nozzles 70C and 70C are located above the gas nozzles 70B and 70B. The gas nozzles 70A, 70A, 70B, 70B, 70C, 70C are arranged along a circular arc concentric with the substrate 8. The number and arrangement of the gas nozzles 70 can be changed as appropriate. The plurality of gas nozzles 70 may be disposed at the same height.

  The gas supply unit 90 supplies an inert gas. The gas supply unit 90 includes a gas supply source 91 a, a flow rate regulator 91 b, and a supply valve 92. The gas supply source 91a is a supply source of inert gas. The supply valve 92 is provided in the gas supply line 93 and opens and closes the gas supply line 93. The flow rate regulator 91b regulates the opening degree of the gas supply line 93 between the supply valve 92 and the gas supply source 91a to adjust the flow rate of the inert gas. The gas supply line 93 is an inert gas supply line that connects the plurality of gas nozzles 70 and the gas supply unit 90 (more specifically, the gas supply source 91 a).

  The open line 97 has one end connected to the gas supply line 93 and the other end open to the atmosphere to release the inert gas flowing in the gas supply line 93 to the atmosphere. The pressure reducing unit 95 draws the treatment liquid 43 in the treatment tank 41 into the gas supply line 93 by reducing the pressure of the gas supply line 93. The pressure reducing unit 95 includes an open valve 96 (valve) provided in the open line 97 and opening and closing the open line 97. The decompression unit 95 decompresses the gas supply line 93 by opening the open valve 96, and draws the treatment liquid 43 in the treatment tank 41 from the plurality of gas nozzles 70 into the gas supply line 93. The degree of pressure is not limited to the atmospheric pressure as long as the treatment liquid 43 in the treatment tank 41 can be drawn in, and the mechanism of the decompression unit 95 is not limited.

(Control unit)
The control unit 7 controls the gas supply unit 90 to stop the supply of gas in part of the idle period in which the substrate 8 is not stored in the processing tank 41, and the processing liquid 43 is drawn into the gas supply line 93. The first control is performed to control the pressure reducing unit 95 to be performed.

  The control unit 7 may alternately and repeatedly execute the first control and the second control for controlling the gas supply unit 90 so as to supply the gas in the idle period.

  The control unit 7 controls the gas supply unit 90 so that gas supply is performed as a second control in a state where the processing liquid 43 is drawn into the gas supply line 93, and the open valve 96 opens and opens the open line 97. The third control that controls the pressure reducing unit 95 so that the gas flowing in the gas supply line 93 flows in and the gas supply unit 90 that controls the gas supply are performed, and the open valve 96 closes the gas supply line 93 A fourth control may be performed to control the pressure reducing unit 95 so that the flowing gas flows toward the gas nozzle 70.

  As the fourth control, the control unit 7 performs a fifth control of controlling the gas supply unit 90 so that the processing liquid 43 drawn into the gas supply line 93 flows into the processing tank 41, and a process drawn into the gas supply line 93 A sixth control may be performed to control the gas supply unit 90 so that the liquid 43 swings in the gas supply line.

  In the idle period, a first idle period transitioning from a substrate processing period in which processing on the substrate 8 is performed in the processing tank 41 and a second idle transition from a processing liquid exchange period in which the processing liquid 43 is exchanged in the processing tank 41 There is a period, and the control unit 7 performs the process in the second idle control, which is the first control of the second idle period, than the amount of withdrawal of the processing liquid 43 in the first idle control, which is the first control of the first idle period. The pressure reducing unit 95 may be controlled to increase the amount of liquid 43 drawn.

  In the following description, “lot period”, “treatment liquid replacement period”, and “idle period” may be described as periods during substrate liquid processing under the control of the control unit 7. The lot period (substrate processing period) is a period in which lot processing (substrate processing) is performed. The lot process is a process of immersing a plurality of substrates 8 for one lot in the process liquid 43. The treatment liquid exchange period is a period in which the liquid exchange process is performed. The liquid exchange process is a process of exchanging the processing liquid in the processing tank 41. The idle period is a period in which the substrate 8 is not accommodated in the treatment liquid 43, and is a period in which the liquid replacement process is not performed. Idle processing is processing performed in an idle period.

  FIG. 3 is a block diagram illustrating a functional configuration of the control unit 7. As shown in FIG. 3, the control unit 7 has a recipe storage unit 111, a liquid supply control unit 112, a drainage control unit 113, and immersion control as a functional configuration (hereinafter referred to as "functional module"). It has a unit 114, a gas supply control unit 115, and a pressure reduction control unit 116.

  The recipe storage unit 111 stores recipes, which are various parameters set in advance to specify processing content. The order of processing and the required time (execution time) of each processing are set in the recipe. The liquid supply control unit 112, the drainage control unit 113, the immersion control unit 114, the gas supply control unit 115, and the pressure reduction control unit 116 perform various controls in accordance with the recipe.

  The liquid supply control unit 112 controls the processing liquid supply unit 44 so that the processing liquid 43 is supplied into the processing tank 41 according to the recipe stored in the recipe storage unit 111. Specifically, the liquid supply control unit 112 opens the flow rate regulator 46 so that the treatment liquid 43 is supplied into the outer tank 42, and the supply pump so that the liquid is sent from the outer tank 42 to the treatment tank 41. Drive 52.

  The drainage control unit 113 controls the treatment liquid discharge unit 67 so that the treatment liquid 43 is discharged from the treatment tank 41 in accordance with the recipe stored in the recipe storage unit 111. Specifically, the drainage control unit 113 closes the flow rate regulator 46 and the flow rate regulator 48 so that the supply of the treatment liquid 43 and the pure water is stopped, and the discharge of the treatment liquid 43 from the treatment tank 41 starts. The on-off valve 69 is changed from the closed state to the open state as described above.

  The immersion control unit 114 controls the substrate lifting mechanism 32 to immerse the substrate 8 (the plurality of substrates 8 for one lot) in the treatment liquid 43 in accordance with the recipe stored in the recipe storage unit 111. Specifically, the immersion control unit 114 lowers the support arm (not shown) of the substrate lifting mechanism 32 to a height at which the substrate 8 for one lot is immersed in the processing liquid 43. Then, after waiting for a predetermined substrate processing time stored in the recipe storage unit 111, the immersion control unit 114 moves the substrate lifting mechanism 32 to a height at which the substrate 8 for one lot is positioned above the liquid surface of the processing liquid 43. Raise the support arm (not shown) of the

  The gas supply control unit 115 controls the gas supply unit 90 so that the inert gas is supplied according to the recipe stored in the recipe storage unit 111. Specifically, the gas supply control unit 115 opens the supply valve 92 so that the gas is supplied to the gas supply line 93. In addition, the gas supply control unit 115 adjusts the opening degree of the flow rate regulator 91 b so that the flow rate of the supplied gas is adjusted.

  The gas supply control unit 115 controls the gas supply unit 90 such that the supply of gas is stopped in the first control that is performed in part of the idle period. Further, the gas supply control unit 115 controls the gas supply unit 90 so that the gas supply is performed in the second control that is performed during the idle period in which the first control is not performed. In addition, the gas supply control unit 115 controls the gas supply unit 90 so that the processing liquid 43 drawn into the gas supply line 93 flows into the processing tank 41 (a large amount of gas is supplied); And controlling the gas supply unit 90 so that the processing liquid 43 drawn into the supply line 93 swings in the gas supply line (a small amount of gas is supplied). The swinging of the processing solution 43 is preferably performed to such an extent that the processing solution 43 staying in the gas supply line and in the vicinity of the gas nozzle opening moves from that position to another position. The gas supply control unit 115 performs such adjustment of the gas flow rate by controlling the flow rate regulator 91 b or the like.

  The decompression control unit 116 controls the decompression unit 95 so that the gas supply line 93 is decompressed and the processing liquid in the processing tank 41 is drawn to the gas supply line 93 according to the recipe stored in the recipe storage unit 111. Do. Specifically, the pressure reduction control unit 116 is provided with an open valve 96 provided in the open line 97 opened to the atmosphere so that the gas supply line 93 is depressurized and the gas flows into the open line 97 from the gas supply line 93. open. Further, the pressure reduction control unit 116 closes the open valve 96 so that the gas flowing through the gas supply line 93 flows to the gas nozzle 70 side. In addition, the pressure reduction control unit 116 may open the open valve 96 only in the second idle period transitioning from the treatment liquid exchange period, and keep the open valve 96 closed in the first idle period transitioning from the lot processing period. As a result, in the second idle period, the treatment liquid 43 is actively drawn by opening the open valve 96, but in the first idle period, the treatment liquid 43 is not actively drawn. As a result, the drawing amount of the processing liquid 43 in the second idle period becomes larger than the drawing amount of the processing liquid 43 in the first idle period.

[Substrate liquid processing method]
Subsequently, a control procedure performed by the control unit 7 will be described as an example of the substrate liquid processing method. As shown in FIG. 4, the control unit 7 first executes step S1. Step S1 includes the filling control of the treatment liquid 43. A more detailed procedure for filling control will be described later. Next, the control unit 7 executes step S2. In step S2, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether the time until the next liquid exchange processing start is the first time or more regarding the lot processing. The first time for lot processing is the time required to perform lot processing plus a predetermined buffer.

  When it is determined in step S2 that the time until the next liquid exchange process start is equal to or longer than the first time (that is, the lot process can be executed before the liquid exchange process is started), the control unit 7 Step S3 is performed. In step S3, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether the time until the start of the next lot processing is equal to or less than the second time related to the idle processing. The second time related to the idle process is a time obtained by adding a predetermined buffer to the shortest time for performing the idle process.

  When it is determined in step S3 that the time until the start of the next lot processing is equal to or less than the second time (that is, the lot processing is performed without the idle processing being held), the control unit 7 executes step S4. . Step S4 includes lot processing control. A more detailed procedure for lot processing control will be described later. The lot processing in step S4 is started at the start time of the lot processing based on the processing schedule of the recipe stored in the recipe storage unit 111. If it is determined in step S3 that the time until the start of the next lot processing is not less than or equal to the second time, the control unit 7 executes step S5 and then executes step S4. Step S5 includes idle process control. A more detailed procedure for idle process control will be described later.

  Following step S4, the control unit 7 executes step S6. In step S6, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether the lot processing has been completed for all lots. In step S4, when the lot processing is completed for all lots, the substrate liquid processing is completed. When the lot processing is not completed, the process is performed again from step S2.

  When it is determined in step S2 that the time until the next liquid exchange process start is not longer than the first time (that is, the lot process can not be performed before the liquid exchange process is started), the control unit 7 Executes step S7. In step S7, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether the time until the liquid exchange processing start is equal to or less than the second time related to the idle processing.

  When it is determined in step S7 that the time until the liquid replacement process starts is equal to or less than the second time (that is, the liquid replacement process is performed without the idle process being held), the control unit 7 executes step S8. . Step S8 includes liquid exchange processing control. A more detailed procedure for liquid exchange process control will be described later. The liquid replacement process of step S 8 is started at the start time of the liquid replacement process based on the processing schedule of the recipe stored in the recipe storage unit 111. If it is determined in step S7 that the time until the liquid replacement process is started is not less than or equal to the second time, the control unit 7 executes step S9 and then executes step S8. Step S9 includes idle process control. A more detailed procedure for idle process control will be described later. When step S8 is completed, the process is executed again from step S2.

(Procedure for filling treatment liquid)
Subsequently, a detailed procedure of the filling control of the processing liquid 43 in the step S1 will be described. At the start timing of execution of step S1, both the supply valve 92 provided in the gas supply line 93 and the open valve 96 provided in the open line 97 are closed. As shown in FIG. 5, the control unit 7 first executes step S11. In step S11, the liquid supply control unit 112 controls the treatment liquid supply unit 44 such that the filling of the treatment liquid 43 into the treatment tank 41 is started. Specifically, with the processing tank 41 empty and the on-off valve 69 closed, the liquid supply control unit 112 opens the flow rate regulator 46 and starts supplying the processing liquid 43 into the outer tank 42. And controls the treatment liquid supply unit 44 so as to drive the supply pump 52 to start liquid feeding from the outer tank 42 to the treatment tank 41.

  Next, the control unit 7 executes step S12. In step S12, the gas supply control unit 115 opens the supply valve 92, and the supply of gas to the gas supply line 93 is started. Subsequently, the control unit 7 executes step S13. In step S13, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether a predetermined filling time has elapsed. The predetermined filling time is a time for filling the processing bath 41 with a sufficient amount of the processing liquid 43 to execute the lot processing in the processing bath 41.

  The process of step S13 is repeatedly executed until the predetermined filling time passes in step S13, and when the predetermined filling time passes, the control unit 7 executes step S14. In step S14, the liquid supply control unit 112 starts circulation control of the treatment liquid 43. The circulation control of the treatment liquid 43 controls the treatment liquid supply unit 44 so that the treatment liquid 43 overflowing from the treatment tank 41 into the outer tank 42 is returned to the lower part of the treatment tank 41 by continuing the driving of the supply pump 52. To do. In the circulation control, the liquid supply control unit 112 controls the treatment liquid supply unit 44 so as to adjust the opening degree of the flow rate regulator 48 for pure water according to the concentration of the treatment liquid 43 detected by the concentration sensor 58. You may do it. Above, step S1 is completed.

(Lot processing procedure)
Subsequently, a detailed procedure of lot processing control in the step S4 will be described with reference to FIG. 6 and FIG. As shown in FIG. 6, the control unit 7 first executes step S41. In step S41, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether or not the pre-stage processing is idle processing. In the process of step S41, “If the pre-stage process is an idle process, the gas supply is stopped and the open valve 96 is open, while the pre-stage process is a lot process or a liquid other than an idle process. In the case of the exchange process, the process is performed depending on the contents of the pre-stage process based on the premise that the gas is supplied and the open valve 96 is in the closed state. In the description of the present embodiment, it is assumed that the gas supply is stopped and the open valve 96 is opened in the state where the idle process is finished, but the present invention is not limited to this. In the finished state, the gas may be supplied and the open valve 96 may be closed as in the case where the pre-processing is a lot processing or the like. In that case, in the lot processing control, the processes of steps S43 to S45 are performed first, and then the processes of step S42 and the subsequent steps are performed.

  When it is determined in step S41 that the pre-stage process is the idle process (the state shown in FIG. 11A is in effect), the control unit 7 executes step S42. In step S42, the gas supply control unit 115 controls the gas supply unit 90 so that the gas supply is started. Specifically, the gas supply control unit 115 opens the supply valve 92 so that the gas is supplied to the gas supply line 93 (see FIG. 11B). The gas supplied from the gas supply unit 90 flows from the gas supply line 93 into the open line 97 by opening the supply valve 92 with the open valve 96 open.

  On the other hand, when it is determined in step S41 that the pre-stage process is not the idle process, the control unit 7 executes step S42 after performing steps S43 to S45. In step S43, the gas supply control unit 115 controls the gas supply unit 90 so as to stop the gas supply. Specifically, the gas supply control unit 115 closes the supply valve 92 so that the gas supply to the gas supply line 93 is stopped. In step S44, the decompression control unit 116 controls the decompression unit 95 so that the gas supply line 93 is decompressed and the processing liquid 43 in the processing tank 41 is drawn to the gas supply line 93. Specifically, the depressurization control unit 116 opens the open valve 96 so that the gas supply line 93 is depressurized and the gas flows into the open line 97 from the gas supply line 93. In step S45, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether or not a predetermined gas stop opening time has elapsed since the gas supply was stopped and the open valve 96 was opened. The predetermined gas stop opening time is a time for which a sufficient amount of the processing liquid 43 is drawn to the predetermined height of the gas supply line 93. The process of step S45 is repeatedly performed until the predetermined gas stop opening time elapses in step S45, and when the predetermined gas stop opening time elapses, the control unit 7 executes step S42 as described above.

  After execution of step S42, the control unit 7 executes step S46. In step S46, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether or not a predetermined open line supply time has elapsed since gas supply to the open line 97 was started in step S42. Ru. The predetermined open line supply time is, for example, about 10 seconds, which is a time for supplying a sufficient amount of gas to remove from the open line 97 water droplets and vapor accumulated in the open line 97.

  In step S46, the process of step S46 is repeatedly performed until the predetermined open line supply time has elapsed, and when the predetermined open line supply time has elapsed, the control unit 7 executes step S47. In step S47, the pressure reduction control unit 116 closes the open valve 96 (see FIG. 11C). Thus, the gas supplied from the gas supply unit 90 flows toward the gas nozzle 70 without flowing into the open line 97, and is supplied from the opening of the gas nozzle 70 into the processing liquid 43 in the processing tank 41. In this state, an upward flow of the treatment liquid 43 is generated in the treatment tank 41.

  Next, the control unit 7 executes step S48. In step S48, from the height at which the immersion control unit 114 positions the plurality of substrates 8 for one lot above the liquid surface of the processing liquid 43 to the height at which the plurality of substrates 8 are immersed in the processing liquid 43. The substrate lifting mechanism 32 is controlled to lower the plurality of support arms (not shown) (see FIG. 11D).

  Next, the control unit 7 executes step S49. In step S49, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether or not a predetermined substrate processing time has elapsed since the substrate is immersed in the processing liquid 43. The predetermined substrate processing time is set according to the required degree of cleaning. The process of step S49 is repeatedly executed until the predetermined substrate processing time has elapsed in step S49, and when the predetermined substrate processing time has elapsed, the control unit 7 executes step S50 as described above. In step S50, a plurality of support arms are provided from the height at which the immersion control unit 114 immerses the plurality of substrates 8 in the treatment liquid 43 to the height at which the plurality of substrates 8 are positioned above the liquid surface of the treatment liquid 43. The substrate lifting mechanism 32 is controlled to raise (not shown). Above, step S4 is completed.

(Liquid exchange treatment procedure)
Subsequently, the detailed procedure of the liquid replacement process control in step S8 will be described with reference to FIGS. 7 and 12. FIG. As shown in FIG. 7, the control unit 7 first executes step S81. In step S81, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether or not the pre-stage processing is idle processing. If it is determined in step S81 that the pre-processing is the idle processing (the state shown in FIG. 12A is in effect), the control unit 7 executes steps S82 and S83. In step S82, the pressure reduction control unit 116 closes the open valve 96. In step S83, the gas supply control unit 115 opens the supply valve 92 so that the gas is supplied to the gas supply line 93.

  When it is determined in step S81 that the pre-processing is not the idle processing, or after the execution of step S83, the control unit 7 executes step S84. In step S84, the drainage control unit 113 controls the treatment liquid discharge unit 67 so that the treatment liquid 43 is started to be discharged from the treatment tank 41 (see FIG. 12B). Specifically, the drainage control unit 113 closes the flow rate regulator 46 and the flow rate regulator 48 so that the supply of the treatment liquid 43 and the pure water is stopped, and the discharge of the treatment liquid 43 from the treatment tank 41 starts. The on-off valve 69 is changed from the closed state to the open state as described above.

  Next, the control unit 7 executes step S85. In step S85, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether or not a predetermined drainage time has elapsed since the drainage was started. The predetermined drainage time is set to a time sufficient to completely discharge the treatment liquid 43 in the treatment tank 41. In step S85, the process of step S85 is repeatedly performed until the predetermined drainage time has elapsed, and when the predetermined drainage time has elapsed, the control unit 7 executes step S86. In step S86, the gas supply control unit 115 closes the supply valve 92 so that the gas supply to the gas supply line 93 is stopped (see FIG. 12C). As described above, the gas supply is started from step S83 before the timing when the drainage is started (step S84), and the gas supply is continued until the drainage time is completed and the drainage is completed, so that provisionally. Even when the treatment liquid before replacement remains in the gas supply line 93, the treatment liquid 43 before replacement remaining in the gas supply line 93 is reliably discharged from the gas supply line 93 by the time the drainage is completed. can do. As a result, mixing of the treatment liquid 43 before and after the liquid exchange in the treatment tank 41 is suppressed. The start timing and the stop timing of the gas supply are not limited to the above, and if the processing solution 43 before replacement can be discharged from the gas supply line 93 before the new processing solution 43 after replacement is filled, The gas supply may be started and stopped at timings other than the above timing.

  Next, the control unit 7 executes step S87. In step S87, the liquid supply control unit 112 controls the treatment liquid supply unit 44 such that the filling of the treatment liquid 43 into the treatment tank 41 is started. For example, in a state where the processing tank 41 is empty and the on-off valve 69 is closed, the liquid supply control unit 112 opens the flow rate regulator 46 to start supply of the processing liquid 43 into the outer tank 42 and supply The processing liquid supply unit 44 is controlled such that the pump 52 is driven to start liquid feeding from the outer tank 42 to the processing tank 41.

  Next, the control unit 7 executes step S88. In step S88, the gas supply control unit 115 opens the supply valve 92 so that the gas supply to the gas supply line 93 is started (see FIG. 12D). Subsequently, the control unit 7 executes step S89. In step S89, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether a predetermined filling time has elapsed. The predetermined filling time is a time for filling the processing bath 41 with a sufficient amount of the processing liquid 43 to execute the lot processing in the processing bath 41.

  The process of step S89 is repeatedly performed until the predetermined filling time passes in step S89, and when the predetermined filling time passes, the control unit 7 executes step S90. In step S90, the liquid supply control unit 112 starts circulation control of the treatment liquid 43. The circulation control of the treatment liquid 43 controls the treatment liquid supply unit 44 so that the treatment liquid 43 overflowing from the treatment tank 41 into the outer tank 42 is returned to the lower part of the treatment tank 41 by continuing the driving of the supply pump 52. To do. In the circulation control, the liquid supply control unit 112 controls the treatment liquid supply unit 44 so as to adjust the opening degree of the flow rate regulator 48 for pure water according to the concentration of the treatment liquid 43 detected by the concentration sensor 58. You may do it.

  Next, the control unit 7 executes step S91. In step S91, the gas supply control unit 115 closes the supply valve 92 so that the gas supply is stopped. Next, the control unit 7 executes step S92. In step S92, the depressurization control unit 116 opens the release valve 96 so that the gas supply line 93 is depressurized and the treatment liquid 43 in the treatment tank 41 is drawn into the gas supply line 93 (see FIG. 12 (e)). . Next, the control unit 7 executes step S93. In step S93, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether or not a predetermined gas stop opening time has elapsed since the gas supply was stopped and the open valve 96 was opened. The predetermined gas stop opening time is a time for which a sufficient amount of the processing liquid 43 is drawn to the predetermined height of the gas supply line 93. When the processing liquid 43 is drawn into the gas supply line 93, at least the processing liquid is sucked into the gas nozzle 70.

  The process of step S93 is repeatedly performed until the predetermined gas stop opening time has elapsed in step S93, and when the predetermined gas stop opening time has elapsed, the control unit 7 executes step S94. In step S94, the pressure reduction control unit 116 closes the open valve 96 (see FIG. 12 (f)). Next, the control unit 7 executes step S95. In step S95, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether a predetermined cleaning time has elapsed since the opening valve 96 was closed. The predetermined cleaning time is set such that the cleaning effect of the gas nozzle 70 by the processing liquid 43 sucked into the gas nozzle 70 can be sufficiently obtained.

  The process of step S95 is repeatedly executed until the predetermined cleaning time has elapsed in step S95, and when the predetermined cleaning time has elapsed, the control unit 7 executes step S96. In step S96, the pressure reduction control unit 116 opens the release valve 96. Next, the control unit 7 executes step S97. In step S97, the gas supply control unit 115 opens the supply valve 92 so that the gas is supplied to the open line 97 (see FIG. 12 (g)).

  Next, the control unit 7 executes step S98. In step S98, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether or not a predetermined open line supply time has elapsed since gas supply to the open line 97 was started in step S97. Ru. The predetermined open line supply time is, for example, about 10 seconds, which is a time for supplying a sufficient amount of gas to remove from the open line 97 water droplets and vapor accumulated in the open line 97.

  In step S98, the process of step S98 is repeatedly executed until a predetermined open line supply time has elapsed, and when the predetermined open line supply time has elapsed, the control unit 7 executes step S99. In step S99, the pressure reduction control unit 116 closes the open valve 96 (see FIG. 12 (h)). Thus, the gas supplied from the gas supply unit 90 flows to the gas nozzle 70 side without flowing into the open line 97. Above, step S8 is completed.

(Idol processing procedure)
Subsequently, a detailed procedure of the idle process control in the steps S5 and S9 will be described with reference to FIG. As shown in FIG. 8, the control unit 7 first executes step S101. In step S101, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether the pre-processing is lot processing. In the process, if the pre-stage process is a lot process, the process liquid is dirty as compared to the case where the pre-stage process is not a lot process, so the amount of drawing of the process liquid 43 into the gas supply line 93 is reduced. In detail, we do to do control with aggressively).

  In step S101, when the pre-processing is a lot processing, the control unit 7 executes step S102. In step S102, the control unit 7 performs first idle control, which is an aspect of the first control, assuming that the idle period is a first idle period. On the other hand, in step S101, when the pre-stage process is not a lot process (specifically, when the pre-stage process is a liquid exchange process), the control unit 7 executes step S103. In step S103, the control unit 7 performs second idle control, which is an aspect of the first control, assuming that the idle period is a second idle period.

  Subsequently, a detailed procedure of the first idle control (control of the first idle process in the first idle period, which is an idle period when the pre-stage process is the lot process) in step S102 will be described with reference to FIG. . As shown in FIG. 9, the control unit 7 first executes step S201. In step S201, the gas supply control unit 115 closes the supply valve 92 so as to stop the gas supply. Next, the control unit 7 executes step S202. In step S202, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether or not a predetermined gas supply stop time has elapsed since the gas supply was stopped. The predetermined gas supply stop time is set to a time sufficient to weaken the upward flow in the processing tank 41 which was formed when the gas was supplied. As a result, the flow of the treatment liquid in the treatment tank 41 is less likely to occur, and thus the generation of crystals in a specific place (such as the edge of the opening of the gas nozzle 70) can be suppressed.

  Next, the control unit 7 executes step S203. In step S203, the pressure reduction control unit 116 opens the release valve 96. Next, the control unit 7 executes step S204. In step S204, the gas supply control unit 115 opens the supply valve 92 so that the gas is supplied to the open line 97.

  Next, the control unit 7 executes step S205. In step S205, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether or not a predetermined open line supply time has elapsed since gas supply to the open line 97 was started in step S204. Ru. The predetermined open line supply time is, for example, about 10 seconds, which is a time for supplying a sufficient amount of gas to remove from the open line 97 water droplets and vapor accumulated in the open line 97.

  In step S205, the process of step S205 is repeatedly performed until a predetermined open line supply time has elapsed, and when the predetermined open line supply time has elapsed, the control unit 7 executes step S206. In step S206, the pressure reduction control unit 116 closes the open valve 96. Thus, the gas supplied from the gas supply unit 90 flows to the gas nozzle 70 side without flowing into the open line 97. The gas is discharged from the opening of the gas nozzle 70, and bubbling the treatment liquid 43 in the treatment tank 41 to cause an upward flow of the treatment liquid 43 in the treatment tank 41.

  Next, the control unit 7 executes step S207. In step S207, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether or not a predetermined nozzle supply time has elapsed since the start of gas supply to the gas nozzle 70. The predetermined nozzle supply time is set to a sufficient time for bubbling the treatment liquid in the treatment tank 41 to cause the upward flow of the treatment liquid 43 in the treatment tank 41.

  In step S207, the process of step S207 is repeatedly performed until a predetermined nozzle supply time has elapsed, and when the predetermined nozzle supply time has elapsed, the control unit 7 executes step S208. In step S208, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether the time until the start of the next processing is equal to or less than the second time related to the idle processing. The second time related to the idle process is a time obtained by adding a predetermined buffer to the shortest time for performing the idle process.

  If it is determined in step S208 that the time until the start of the next processing is not less than the second time (that is, the processing of steps S201 to S208 of the first idle processing is performed again by the start of the next processing), the control unit 7 Performs the process from step S201 again. On the other hand, when it is determined in step S208 that the time until the start of the next process is equal to or less than the second time (that is, the next process is performed without interposing the first idle process again), the control unit 7 Step S209 is executed. In step S209, the gas supply control unit 115 closes the supply valve 92 so as to stop the gas supply. Next, the control unit 7 executes step S210. In step S210, the pressure reduction control unit 116 opens the release valve 96. Above, step S102 is completed.

  Subsequently, the detailed procedure of the second idle control (control of the second idle processing in the second idle period, which is an idle period when the pre-stage processing is not the lot processing but the liquid exchange processing) in step S103 is shown in FIG. This will be described with reference to FIG. As shown in FIG. 10, the control unit 7 first executes step S301. In step S301, the gas supply control unit 115 closes the supply valve 92 so that the gas supply is stopped. Next, the control unit 7 executes step S302. In step S302, the pressure reduction control unit 116 opens the release valve 96. As a result, the gas supply line 93 is depressurized, and drawing of the treatment liquid 43 into the gas supply line 93 is started (see FIG. 13A). Thus, in part of the idle period, the control is such that the gas supply unit 90 is controlled to stop the supply of gas, and the decompression unit 95 is controlled to draw the processing liquid 43 into the gas supply line 93, This is the first control.

  Next, the control unit 7 executes step S303. In step S303, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether or not a predetermined gas stop open time has elapsed since the gas supply was stopped and the open valve 96 was opened. The predetermined gas stop opening time is a time for which a sufficient amount of the processing liquid 43 is drawn to the predetermined height of the gas supply line 93. In step S303, the process of step S303 is repeatedly performed until a predetermined gas stop opening time has elapsed, and when the predetermined gas stop opening time has elapsed, the control unit 7 executes step S304. In step S304, the gas supply control unit 115 opens the supply valve 92 so that the gas is supplied to the open line 97 (see FIG. 13B). As described above, the control in which the gas supply unit 90 is controlled to supply the gas is the second control. More specifically, the control in which the pressure reducing unit 95 is controlled such that the gas flowing through the gas supply line 93 flows into the open line 97 is the third control of the second control.

  Next, the control unit 7 executes step S305. In step S305, based on the processing schedule of the recipe stored in recipe storage unit 111, it is determined whether or not a predetermined open line supply time has elapsed since gas supply to open line 97 was started in step S304. Ru. The predetermined open line supply time is, for example, about 10 seconds, which is a time for supplying a sufficient amount of gas to remove from the open line 97 water droplets and vapor accumulated in the open line 97.

  In step S305, the process of step S305 is repeatedly executed until a predetermined open line supply time has elapsed, and when the predetermined open line supply time has elapsed, the control unit 7 executes step S306. In step S306, the pressure reduction control unit 116 closes the open valve 96 (see FIG. 13C). Thus, the gas supplied from the gas supply unit 90 flows to the gas nozzle 70 side without flowing into the open line 97. As such, the control in which the pressure reducing unit 95 is controlled such that the gas flowing through the gas supply line 93 flows toward the gas nozzle 70 is the fourth control of the second control.

  Here, as the fourth control described above, the control unit 7 performs a fifth control of controlling the gas supply unit 90 so that all of the treatment liquid 43 drawn into the gas supply line 93 flows into the treatment tank 41 in principle; A sixth control is performed to control the gas supply unit 90 such that the processing liquid 43 drawn into the gas supply line 93 swings in the gas supply line 93. In the fifth control, a gas is discharged from the opening of the gas nozzle 70, and the treatment liquid 43 in the treatment tank 41 is bubbled to cause an upward flow of the treatment liquid 43 in the treatment tank 41. In the sixth control, in principle, the treatment liquid 43 in the gas supply line 93 does not flow into the treatment tank 41 and swings in the gas supply line 93. For example, after repeating the sixth control of swinging the treatment solution 43 in the gas supply line a plurality of times, the control unit 7 performs a fifth control of flowing the treatment solution 43 drawn into the gas supply line 93 into the treatment tank 41. Do. The gas supply control unit 115 adjusts the flow rate regulator 91 b such that, for example, the gas supply amount in the fifth control is larger than the gas supply amount in the sixth control. Further, the gas supply control unit 115 adjusts the flow rate regulator 91b (or the supply valve 92) so that, for example, the gas supply time in the fifth control is longer than the gas supply time in the sixth control.

  Next, the control unit 7 executes step S307. In step S307, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether or not a predetermined nozzle supply time has elapsed since the start of gas supply to the gas nozzle 70. The predetermined nozzle supply time is set to a sufficient time for bubbling the treatment liquid in the treatment tank 41 to cause the upward flow of the treatment liquid 43 in the treatment tank 41. Further, the predetermined nozzle supply time is, for example, a time sufficient for the fifth control to be performed after the above-described sixth control is repeated a plurality of times.

  In step S307, the process of step S307 is repeatedly performed until a predetermined nozzle supply time has elapsed, and when the predetermined nozzle supply time has elapsed, the control unit 7 executes step S308. In step S308, based on the processing schedule of the recipe stored in the recipe storage unit 111, it is determined whether the time until the start of the next processing is equal to or less than the second time related to the idle processing. The second time related to the idle process is a time obtained by adding a predetermined buffer to the shortest time for performing the idle process.

  If it is determined in step S308 that the time until the start of the next process is not less than or equal to the second time (that is, the processes of steps S301 to S308 of the second idle process are performed again before the start of the next process) Performs the process from step S301 again. On the other hand, when it is determined in step S308 that the time until the start of the next process is the second time or less (that is, the next process is performed without the second idle process being repeated again), the control unit 7 Step S309 is executed. In step S309, the gas supply control unit 115 closes the supply valve 92 so that the gas supply is stopped. Next, the control unit 7 executes step S310. In step S310, the pressure reduction control unit 116 opens the release valve 96 (see FIG. 13D). Above, step S103 is completed.

[Effect of this embodiment]
As described above, the substrate liquid processing apparatus A1 includes the processing tank 41 for storing the processing liquid 43 and the substrate 8, the gas nozzle 70 for discharging the gas to the lower part in the processing tank 41, and the gas supply unit for supplying the gas. 90, a gas supply line 93 connecting the gas nozzle 70 and the gas supply unit 90, a pressure reduction unit 95 for drawing the treatment liquid 43 in the treatment tank 41 into the gas supply line 93 by reducing the pressure of the gas supply line 93, a treatment tank The gas supply unit 90 is controlled to stop the supply of gas during part of the idle period in which the substrate 8 is not accommodated in 41, and the pressure reduction unit 95 is controlled to draw the processing liquid 43 into the gas supply line 93. And a control unit 7 configured to execute the first control.

  In the substrate liquid processing apparatus A1, the supply of gas to the gas nozzle 70 is stopped and the pressure of the gas supply line 93 is reduced during part of the idle period, and the processing liquid 43 in the processing tank 41 is drawn into the gas supply line 93. Be In the processing bath 41 in which the substrate 8 is processed, in order to keep the state of the processing liquid 43 uniform, gas is usually supplied from a gas nozzle 70 provided at the lower part. By the supply of the gas, the upward flow of the treatment liquid 43 in the treatment tank 41 is stably formed. Although this makes it easy to keep the state of the treatment liquid 43 uniform, the stagnation of the treatment liquid 43 is likely to occur due to the flow of gas at a specific place. Specifically, stagnation of the treatment liquid 43 due to the disturbance of the gas flow tends to occur at the edge of the opening of the gas nozzle 70. For this reason, crystals such as components eluted from the substrate 8 and various conduits may be generated at the edge of the opening of the gas nozzle 70, and this crystal may be an obstacle to gas discharge. In this respect, in the substrate liquid processing apparatus A1 according to the present embodiment, the gas supply is stopped and the processing liquid 43 is drawn into the gas supply line 93 in part of the idle period in which the substrate processing is not performed. . When the gas supply is stopped, the flow of the processing liquid in the processing tank 41 described above is less likely to occur, so that the generation of crystals in a specific place (such as the edge of the opening of the gas nozzle 70) can be suppressed. Then, the treatment liquid 43 is drawn into the gas supply line 93, whereby the crystal present at the edge of the opening of the gas nozzle 70 is drawn into the gas supply line 93 together with the treatment liquid 43. Thereby, the crystal is removed from the edge of the opening of the gas nozzle 70, and the gas can be appropriately discharged from the gas nozzle 70.

  An example of the processing flow of the substrate liquid processing apparatus A1 will be described with reference to FIG. 14 while comparing with the processing flow of the substrate liquid processing apparatus according to the comparative example. FIG. 14A shows an example of the processing flow of the substrate liquid processing apparatus according to the comparative example. FIG. 14B shows an example of the flow of processing of the substrate liquid processing apparatus A1 according to the present embodiment. In any case, an idle period of time t1 to t3, a lot processing period of time t3 to t4, a treatment liquid exchange period of time t4 to t6, and an idle period of time t6 to t7 are shown in time series in this order. There is. For example, in the processing of the substrate liquid processing apparatus according to the comparative example of FIG. 14A, it is shown that N2 gas is always supplied in the idle period of time t1 to t3 and the idle period of time t6 to t7. There is. On the other hand, in the processing of the substrate liquid processing apparatus A1 according to the present embodiment of FIG. 14B, the N 2 gas is not supplied in the idle period of time t1 to t3 and the idle period of time t6 to t7 ( There is a period of time during which the gas supply is shut off Specifically, in the idle period from time t1 to t3, N2 gas is not supplied until time t2 before the start of the lot processing period. Further, in the idle period from time t6 to t7, a period in which the N2 gas is supplied and a period (interval) in which the N2 gas is not supplied are alternately repeated. As described above, unlike the process of the substrate liquid processing apparatus according to the comparative example in the related art, the gas is always supplied in the idle period, whereas the process of the substrate liquid processing apparatus A1 of this embodiment is performed. Since the flow of the processing liquid 43 in the processing tank 41 is less likely to occur as described above by stopping the gas supply in part of the idle draft, crystals are generated at the edge of the opening of the gas nozzle 70 or the like. Can be suppressed.

  Then, as described in the above description of FIG. 14, in the substrate liquid processing apparatus A1, the control unit 7 stops the supply of gas and the processing liquid 43 is drawn into the gas supply line 93 in the idle period. The first control and the second control for controlling the gas supply unit 90 so as to supply the gas are alternately and repeatedly performed (see idle periods at time t6 to t7 in FIG. 14B). By supplying the gas in the second control, the state of the treatment liquid 43 can be kept uniform. In addition, the first control for drawing in the processing solution 43 while stopping the gas supply and the second control for supplying the gas are alternately and repeatedly executed, so that the treatment liquid containing crystals is drawn in in the first control. 43 can be poured into, for example, the processing tank 41 in the second control. Thus, the crystals can be more reliably removed by returning the drawn crystals into the treatment liquid of the treatment tank 41.

  The substrate liquid processing apparatus A1 further includes an open line 97 for opening the gas flowing in the gas supply line 93 to the atmosphere, and the pressure reducing unit 95 includes an open valve 96 capable of opening and closing the open line 97. The gas supply line 93 is depressurized by opening 96, and the control unit 7 controls the gas supply unit 90 to supply gas as a second control in a state where the processing liquid 43 is drawn into the gas supply line 93. While controlling, the open valve 96 is opened, the third control for controlling the pressure reducing unit 95 so that the gas flowing in the gas supply line 93 flows into the open line 97, and the gas supply unit 90 so as to perform the gas supply At the same time, the open valve 96 is closed, and a fourth control is performed to control the pressure reducing unit 95 so that the gas flowing through the gas supply line 93 flows toward the gas nozzle 70. Water droplets or the like may be accumulated in the open line 97 connected to the gas supply line 93 by drawing in the treatment liquid 43 or the like. In the third control, when the gas flows into the open line 97, the water droplets and the like can be removed, and the water droplets and the like can be prevented from flowing into the gas supply line 93 side (as a result, into the processing tank 41). be able to. Further, in the fourth control, when the gas flows toward the gas nozzle 70, for example, when the gas is discharged from the gas nozzle 70, the state of the processing liquid 43 can be maintained uniform by the supply of the gas.

  The process of removing water droplets and the like on the open line 97 (the process similar to the third control described above) is also performed in the cleaning period of the treatment liquid exchange period (for example, the cleaning period of time t5 to t6 in FIG. It may be implemented. That is, in the substrate liquid processing apparatus A1, as shown in steps S95 to S98 of FIG. 7 and FIG. 12 (g), gas is flowed into the open line 97 and water droplets on the open line 97 during the cleaning period of the treatment liquid exchange period. Etc have been removed. The said process is a process which was not performed in the conventional substrate liquid processing apparatus (For example, the substrate liquid processing apparatus based on the comparative example shown to Fig.14 (a)).

  Further, in the substrate liquid processing apparatus A1, as the fourth control, the control section 7 performs fifth control for controlling the gas supply section 90 so that the processing liquid 43 drawn into the gas supply line 93 flows into the processing tank 41. A sixth control is performed to control the gas supply unit 90 such that the processing liquid 43 drawn into the gas supply line 93 swings in the gas supply line 93. In the fifth control, the drawn-in processing solution 43 is poured into the processing tank 41, whereby the upward flow of the processing solution 43 can be appropriately generated while appropriately removing the crystals. In addition, the discharge portion of the gas nozzle 70 is moistened by supplying the gas such that the processing liquid 43 swings in the sixth control (that is, the processing liquid 43 is not completely discharged from the gas supply line 93). You can keep it in the This can suppress the formation of crystals around the discharge portion of the gas nozzle 70 (the edge of the opening of the gas nozzle 70).

  Further, during the idle period, the first idle period transiting from the lot processing period (substrate processing period) in which the processing to the substrate 8 is performed in the processing tank 41 and the processing liquid exchange in which the processing liquid 43 is exchanged in the processing tank 41 There is a second idle period that transitions from the period, and the control unit 7 performs the first control of the second idle period more than the amount of withdrawal of the processing liquid 43 in the first idle control that is the first control of the first idle period. The pressure reducing unit 95 is controlled such that the amount of withdrawal of the processing liquid 43 in a certain second idle control is increased. Generally, since the processing solution after substrate processing is often in a dirty state, it is not preferable to draw a large amount of the processing solution 43 in the idle processing after lot processing. In this regard, the amount of drawing in of the processing liquid 43 in the second idle control is made larger than the amount of drawing in of the processing liquid 43 in the first idle control, so that the processing liquid 43 in a dirty state after substrate processing becomes a gas supply line. It is possible to suppress a large amount of being drawn into 93.

  As mentioned above, although embodiment was described, this indication is not limited to the said embodiment. For example, although it has been described that the substrate liquid processing apparatus A1 includes the cleaning processing apparatus 1 using the processing liquid 43 such as SC-1 or the like, the present invention is not limited thereto, and includes a cleaning processing apparatus or etching apparatus using other various processing liquids. It may be one.

  Although the configuration for decompressing the gas supply line 93 by opening to the atmosphere is illustrated as the configuration of the decompression unit 95, the configuration is not limited to this, and any configuration that can decompress the gas supply line is possible. It may be

  In addition, the control unit 7 controls the processing liquid in at least a part of the processing liquid replacement period in which the processing liquid is exchanged in the processing tank 41 more than the lot period (substrate processing period) in which the processing on the substrate 8 is performed in the processing tank 41. High flow control may be performed to control the gas supply unit 90 so that the discharge amount of gas from the gas nozzle 70 is increased. In the high flow rate control, for example, the gas supply unit 90 is controlled such that a gas whose discharge amount is about 5 to 6 times the normal discharge amount of the gas is discharged from the gas nozzle 70. The control unit 7 may execute the above-described high flow rate control in the cleaning period after the supply of a new treatment liquid in the treatment liquid exchange period. More specifically, the control unit 7 may execute high flow rate control after temperature increase control for raising the temperature of a new processing liquid in the cleaning period is started. Furthermore, the control unit 7 may monitor the pressure value of the gas nozzle 70 during execution of high flow rate control, and it is estimated that the gas nozzle 70 is clogged when the pressure value of the gas nozzle 70 exceeds a predetermined value. And various processing in the processing tank 41 may be completed.

  FIG. 15 is an explanatory view of the discharge of gas from the gas nozzle 70 in each process, (a) is a comparative example, and (b) is an explanatory view of the embodiment. As shown in FIG. 15A, in the comparative example, in the lot processing for the lot period, the loading of the substrate 8 (wafer transfer), the processing on the substrate 8 (wafer processing), and the unloading of the substrate 8 (wafer transfer) are performed. In each process, the gas supply unit 90 is controlled such that a small amount of gas is discharged from the gas nozzle 70. Further, in the treatment liquid exchange period for the lot period, the gas supply unit 90 is controlled such that a small amount of gas is discharged from the gas nozzle 70 in the liquid exchange treatment (drainage and treatment liquid filling), and the cleaning period thereafter The gas supply unit 90 is controlled such that the supply of gas is stopped in FIG. 15A (described as “Vent” and “immersion” in FIG. 15A). In this respect, as shown in FIG. 15B, the treatment liquid exchange period in the embodiment is a cleaning period after the new treatment liquid is supplied by the liquid exchange treatment, and the temperature rise of the treatment liquid is raised. During the temperature control period (described as “waiting for temperature rise” in FIG. 15 (b)) and in the pressure monitoring engine thereafter (described as “pressure monitoring” in FIG. 15 (b)), the lot is being processed. The gas supply unit 90 is controlled such that a larger amount of gas than the small amount of gas is discharged from the gas nozzle 70. As described above, in the embodiment illustrated in FIG. 15B, the control unit 7 increases the discharge amount of the gas from the gas nozzle 70 more than the lot period (the substrate processing period) in the cleaning period of the treatment liquid exchange period. Thus, high flow rate control for controlling the gas supply unit 90 is performed.

  FIG. 16 is a flowchart of high flow rate control in the above-described treatment liquid exchange period. Note that FIG. 16 shows only the process up to the end of the high flow rate control in the process liquid replacement period. As shown in FIG. 16, in the treatment liquid exchange period, first, the control unit 7 controls the treatment liquid discharge unit 67 so that the treatment liquid is started to be discharged from the treatment tank 41 (step S501). Subsequently, the control unit 7 determines whether a predetermined drainage time has elapsed (step S502), and when it is determined that the drainage time has elapsed, the treatment tank 41 is filled with the treatment liquid. The processing liquid supply unit 44 is controlled so as to start (step S503). Subsequently, the control unit 7 determines whether a predetermined filling time has elapsed (step S504), and if it is determined that the filling time has elapsed, the temperature rise of the processing liquid is started. The heating mechanism (not shown) is controlled (step S505).

  Then, with the start of step S505 (or shortly after the start), the control unit 7 starts high flow control (step S506). Specifically, the control unit 7 opens the supply valve 92 so that the gas supply to the gas supply line 93 is started. At this time, the control unit 7 opens the supply valve 92 so that the discharge amount of gas from the gas nozzle 70 is larger than the lot period (substrate processing period).

  Subsequently, the control unit 7 determines whether or not a predetermined temperature rise time has elapsed (step S507), and when it is determined that the temperature rise time has elapsed, the gas nozzle 70 during execution of the high flow rate control Pressure monitoring is started (step S508). The control unit 7 acquires the pressure of the gas nozzle 70 measured by a pressure gauge (not shown), and determines whether the pressure value is smaller than a predetermined value (step S509). If it is determined in step S509 that the pressure value exceeds the predetermined value, the control unit 7 ends all the processing. On the other hand, when it is determined that the pressure value is smaller than the predetermined value, the control unit 7 determines whether or not the predetermined pressure monitoring time has elapsed (step S510). The high flow control is ended (step S511).

  Next, the operation and effect of performing the above-described high flow rate control will be described. FIG. 20 is a side view of the gas nozzle 70 (a schematic view). FIG. 21 is an enlarged view of the gas nozzle 70 shown in FIG. FIG. 22 is a view showing the mechanism of crystallization in the gas nozzle 70, wherein (a) is a state before crystallization, (b) is a state in the middle of crystallization, and (c) is a state of the gas nozzle 70 after crystallization. FIG.

  As shown in FIG. 20, a plurality of gas nozzles 70 are provided side by side in the extending direction of the supply pipes 550 extending in the depth direction of the processing tank 41 when viewed from the side direction of the processing tank 41. Each gas nozzle 70 is connected to the supply pipe 550, and an inert gas (for example, N 2 gas supplied to the gas supply unit 90) flowing through the supply pipe 550 flows in and discharges the inert gas. As shown in FIG. 21, the gas nozzle 70 is formed in a substantially conical shape, and is formed so that the pipe diameter gradually increases from the inflow point of the gas downward (that is, the discharge port of the gas nozzle 70). There is.

  As shown in FIG. 22A, the processing liquid flows into the gas nozzle 70 from the outlet side (back flow). Thereby, as shown in FIG. 22 (b), concentration of silica in the treatment liquid occurs at the gas-liquid interface in the gas nozzle 70, and crystallization proceeds by drying. Then, as shown in FIG. 22C, it is conceivable that clogging further occurs in the gas nozzle 70 as crystallization progresses.

  In this respect, as described above, the control unit 7 controls the gas supply unit 90 such that the discharge amount of the gas from the gas nozzle 70 is larger than the lot period during at least a part of the treatment liquid exchange period. Is running. By increasing the discharge amount of the gas from the gas nozzle 70, crystals at the gas-liquid interface of the gas nozzle 70 can be removed.

  As described above, the control unit 7 executes the above-described high flow rate control in the cleaning period after the new treatment liquid is supplied in the treatment liquid exchange period. More specifically, the controller 7 executes high flow rate control after temperature increase control for raising the temperature of a new processing liquid in the cleaning period is started. As described above, by performing the high flow rate control in the cleaning period, it is not necessary to provide a separate treatment period for the high flow rate control, and the crystal can be removed without causing a decrease in the treatment efficiency and the like.

  The control unit 7 monitors the pressure value of the gas nozzle 70 during execution of high flow rate control, estimates that the gas nozzle 70 is clogged when the pressure value exceeds a predetermined value, and performs various processes in the processing tank 41 Have finished. By monitoring the pressure value at the time of high flow control, it is possible to more appropriately grasp the pressure change (that is, the tendency of clogging) of the gas nozzle 70. Then, when the pressure value becomes higher than a predetermined value, the processing such as the lot processing can be ended at an optimal timing by estimating that the gas nozzle 70 is clogged and ending the processing.

  The substrate liquid processing apparatus A1 may further include an imaging unit 700 provided at a position where the processing liquid in the processing tank 41 can be imaged, as shown in FIG. The imaging part 700 should just be what can image the boiling state of the processing tank 41 (phosphoric acid tank), for example, is a high-speed camera. The imaging unit 700 may be provided above the processing tank 41, for example. The imaging unit 700 continuously images the processing liquid in the processing tank 41 at regular intervals, and outputs the captured image to the control unit 7.

  The control unit 7 specifies the boiling state of the processing liquid based on the image captured by the imaging unit 700. The control unit 7 specifies (estimates) the number of air bubbles in the processing liquid based on, for example, the image captured by the imaging unit 700, and specifies the boiling state based on the number of air bubbles. The control unit 7 may specify (estimate) the number of bubbles in each of the plurality of images captured by the imaging unit 700 in a predetermined period, and may specify the boiling state based on the number of bubbles in each of the plurality of images. The plurality of images in this case are, for example, several tens to several hundreds of images. FIG. 18 is a graph showing the frequency distribution of the number of bubbles (the number of bubbles). The control unit 7 specifies the number of bubbles in each image, derives the number (frequency) of images with the same number of bubbles, and derives a frequency distribution as shown in FIG. For example, the control unit 7 may estimate the number of bubbles having the largest frequency as the number of bubbles in the current processing liquid, and may specify the boiling state of the processing liquid from the number of bubbles.

  FIG. 19 is a diagram showing the relationship between the number of bubbles and the boiling state. As shown in FIG. 19, the range of the estimated number of bubbles (for example, the number of bubbles having the highest frequency) and the boiling state are associated in advance, and “unboiled” “weak boiling” in ascending order of the number of bubbles. It is divided into "suitable boiling", "strong boiling" and "over boiling". The "non-boiling" is, for example, a calm state without generation of air bubbles and no wave of liquid level. "Weak boiling" is, for example, a state in which generation of air bubbles can be visually confirmed, but there is almost no wave of the liquid surface. The "appropriate boiling" is a state in which a large number of small bubbles are generated and the wave of the liquid surface can be visually confirmed. "Strong boiling" is a state in which a large number of large bubbles are generated and the liquid surface is greatly corrugated. "Over-boiling" is a state in which a large number of large air bubbles are generated, the liquid surface is strongly waved, and bubbling occurs. Then, the control unit 7 adjusts the concentration of the processing liquid based on the boiling state. Since the boiling state becomes strong when the concentration of the processing liquid is low, for example, the controller 7 adjusts the concentration of the processing liquid to be high when the boiling state is strong. The control unit 7 repeatedly executes the identification of the boiling state (and the adjustment of the concentration of the processing liquid based on the boiling state) in a predetermined cycle.

  Details of an example of the control method of the boiling state by the image analysis described above will be described below. The captured image is taken into a PC and made into a database. Boiling conditions are determined for these images using image processing software. Then, when there is a deviation from the reference boiling state (when changing from the reference boiling state), the change amount feedback processing (processing to return the changed concentration to the predetermined range) is performed, and the boiling state of the processing liquid is It is kept constant. In processing using image processing software, first, a difference image is created between a captured bubble image and a background image (water single-phase flow image). As a result, it is possible to create a new image (difference image) by taking the absolute value of the difference between the pixel luminance values (brightness per unit area) at the same position in the image. In the difference image, parts other than the bubbles are removed. Subsequently, the difference image is median-filtered to remove fine noise (i.e., to remove noise other than brightness that is considered to be air bubbles). Subsequently, binarization processing is performed, only air bubbles are extracted from the image, and the number of air bubbles is measured. Bubbles having a bubble diameter equal to or less than a predetermined value (for example, 0.4 mm or less) may be excluded from the measurement target in order to avoid deterioration in measurement accuracy. Such processing is performed for each image, and the number (frequency) of images having the same number of bubbles is derived and used as the measurement result. Subsequently, the measurement result is compared with the number of bubbles in each boiling state stored in the database (see FIG. 19) to determine the current boiling state. As the measurement result, as described above, the number of bubbles having the largest frequency may be used, or the maximum number of bubbles may be used. And when changing from a reference | standard boiling state, a change amount part is fed back to concentration and a boiling state is adjusted.

  As described above, the substrate liquid processing apparatus A1 further includes the imaging unit 700 provided at a position at which the processing liquid in the processing tank 41 can be imaged, so that the state of the processing liquid in the processing tank 41 (for example, Boiling state can be easily grasped, and adjustment (for example, concentration adjustment of the treatment liquid) of the treatment liquid can be easily and surely performed according to the state of the treatment liquid.

  Further, the control unit 7 specifies the boiling state of the processing liquid based on the image captured by the imaging unit 700. As a method of specifying the boiling state, a method using a sensor such as a water head pressure sensor can be considered. However, it is difficult to accurately grasp the boiling state because the sensor is likely to cause individual differences and variations in adjustment. In this regard, by specifying the boiling state of the processing liquid from the image captured by the imaging unit 700, it is possible to specify the boiling state of the processing liquid with high accuracy as in the case where a person actually looks at it. Then, the control unit 7 estimates the number of bubbles in the processing liquid based on the image, and specifies the boiling state based on the number of bubbles. Since the number of bubbles and the boiling state are closely related, the boiling state can be specified with higher accuracy by the method described above. In addition, when the control unit 7 estimates the number of bubbles in each of the plurality of images and identifies the boiling state based on the number of bubbles in each of the plurality of images, for example, the boiling state is identified from only one image. The boiling state can be identified with higher accuracy as compared with.

  Further, the control unit 7 can adjust the concentration of the treatment liquid to a desired range by an easy method by adjusting the concentration of the treatment liquid based on the boiling state. The control unit 7 can continuously perform processing such as concentration adjustment based on the boiling state by repeatedly executing the identification of the boiling state in a predetermined cycle. In addition, since the imaging part 700 is provided above the processing tank 41, it becomes easy to specify the bubble of a process liquid, and the identification of a boiling state can be performed with high precision.

  A1 ... substrate liquid processing apparatus, 7 ... control unit, 8 ... substrate, 41 ... processing tank, 43 ... processing solution, 70 ... gas nozzle, 90 ... gas supply unit, 93 ... gas supply line, 95 ... decompression unit, 96 ... open Valve (valve), 97 ... open line. 700: Imaging unit.

Claims (19)

A processing tank for containing a processing solution and a substrate;
A gas nozzle for discharging a gas to a lower portion in the processing tank;
A gas supply unit for supplying the gas;
A gas supply line connecting the gas nozzle and the gas supply unit;
A pressure reducing section for drawing the processing liquid in the processing tank into the gas supply line by reducing the pressure of the gas supply line;
The gas supply unit is controlled to stop the supply of the gas during part of an idle period in which the substrate is not accommodated in the processing tank, and the processing liquid is drawn into the gas supply line. And a controller configured to control the pressure reducing unit and configured to execute the first control.   The substrate liquid according to claim 1, wherein the control unit alternately and repeatedly performs the first control and a second control for controlling the gas supply unit to perform the gas supply in the idle period. Processing unit. It further comprises an open line for opening the gas flowing to the gas supply line to the atmosphere,
The pressure reducing unit has a valve capable of opening and closing the open line, and the pressure in the gas supply line is reduced by opening the valve.
The control unit controls the gas supply unit so that the gas supply is performed as the second control in a state where the processing liquid is drawn into the gas supply line, and the valve is opened, and the open line is opened. A third control for controlling the pressure reducing unit so that the gas flowing in the gas supply line flows in, and controls the gas supply unit so that the gas is supplied, and the valve is closed, the gas supply line The substrate liquid processing apparatus according to claim 2, further comprising: a fourth control that controls the pressure reducing unit such that a gas flowing in the flow direction flows to the gas nozzle side.   The control unit is, as the fourth control, a fifth control that controls the gas supply unit such that the processing liquid drawn into the gas supply line flows into the processing tank; and the control unit is drawn into the gas supply line The substrate liquid processing apparatus according to claim 3, further comprising: sixth control to control the gas supply unit such that the processing liquid swings in the gas supply line. In the idle period, a first idle period transitioning from a substrate processing period in which processing on the substrate is performed in the processing tank, and a second idle period transitioning from a processing liquid exchange period in which the processing liquid is exchanged in the processing tank There is an idle period,
The control unit is configured to reduce the pressure so that the amount of withdrawal of the processing liquid in the first control of the second idle period is larger than the amount of withdrawal of the treatment liquid in the first control of the first idle period. The substrate liquid processing apparatus according to any one of claims 1 to 4, which controls the unit.   The control unit performs the processing from the gas nozzle during a substrate processing period in which processing on the substrate is performed in the processing tank during at least a part of a processing liquid exchange period in which the processing liquid is exchanged in the processing tank. The substrate liquid processing apparatus according to any one of claims 1 to 5, wherein high flow rate control is performed to control the gas supply unit such that the discharge amount of gas is increased.   The substrate liquid processing apparatus according to claim 6, wherein the control unit executes the high flow rate control in a cleaning period after supply of a new processing liquid in the processing liquid replacement period.   The substrate liquid processing apparatus according to claim 7, wherein the control unit executes the high flow rate control after temperature increase control for raising the temperature of the new processing liquid is started in the cleaning period.   The substrate liquid processing apparatus according to any one of claims 6 to 8, wherein the control unit monitors a pressure value of the gas nozzle during execution of the high flow rate control.   10. The substrate liquid processing apparatus according to claim 9, wherein the control unit estimates that clogs have occurred in the gas nozzle when the pressure value of the gas nozzle exceeds a predetermined value, and ends various processing in the processing tank. .   The substrate liquid processing apparatus according to any one of claims 1 to 10, further comprising an imaging unit provided at a position at which the processing liquid in the processing tank can be imaged.   The substrate liquid processing apparatus according to claim 11, wherein the control unit specifies a boiling state of the processing liquid based on an image captured by the imaging unit.   The substrate liquid processing apparatus according to claim 12, wherein the control unit estimates the number of bubbles in the processing liquid based on the image, and identifies the boiling state based on the number of bubbles.   The control unit estimates the number of the bubbles in each of the plurality of images captured by the imaging unit in a predetermined period, and identifies the boiling state based on the number of the bubbles in each of the plurality of images. The board | substrate liquid processing apparatus of description.   The substrate liquid processing apparatus according to any one of claims 12 to 14, wherein the control unit adjusts the concentration of the processing liquid based on the boiling state.   The substrate liquid processing apparatus according to any one of claims 12 to 15, wherein the control unit repeatedly executes the identification of the boiling state in a predetermined cycle.   The substrate liquid processing apparatus according to any one of claims 11 to 16, wherein the imaging unit is provided above the processing tank. Stopping the supply of gas by the gas supply unit to the gas nozzle that discharges the gas to the lower part in the processing tank during a part of the idle period in which the substrate is not accommodated in the processing tank;
And drawing the processing liquid in the processing tank into the gas supply line by reducing the pressure of a gas supply line connecting the gas nozzle and the gas supply unit in part of the idle period. .   A computer readable storage medium storing a program for causing an apparatus to execute the substrate liquid processing method according to claim 18.

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