JP7322408B2 - 炭化珪素多結晶基板、炭化珪素多結晶膜の製造方法および炭化珪素多結晶基板の製造方法 - Google Patents

炭化珪素多結晶基板、炭化珪素多結晶膜の製造方法および炭化珪素多結晶基板の製造方法 Download PDF

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JP7322408B2
JP7322408B2 JP2019005111A JP2019005111A JP7322408B2 JP 7322408 B2 JP7322408 B2 JP 7322408B2 JP 2019005111 A JP2019005111 A JP 2019005111A JP 2019005111 A JP2019005111 A JP 2019005111A JP 7322408 B2 JP7322408 B2 JP 7322408B2
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film
layer
silicon carbide
film forming
polycrystalline
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泰三 北川
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Sumitomo Metal Mining Co Ltd
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JP2019005111A 2019-01-16 2019-01-16 炭化珪素多結晶基板、炭化珪素多結晶膜の製造方法および炭化珪素多結晶基板の製造方法 Active JP7322408B2 (ja)

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JP7504311B1 (ja) * 2022-07-26 2024-06-21 東海カーボン株式会社 多結晶ＳｉＣ成形体及びその製造方法
CN119895074A (zh) * 2023-08-25 2025-04-25 东海炭素株式会社 多晶SiC成型体

Citations (2)

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Publication number Priority date Publication date Assignee Title
JP2001158666A (ja) 1999-11-26 2001-06-12 Toshiba Ceramics Co Ltd ＣＶＤ−ＳｉＣ自立膜構造体、及びその製造方法
JP2009295728A (ja) 2008-06-04 2009-12-17 Hitachi Cable Ltd 炭化珪素半導体基板およびその製造方法

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JPH08188408A (ja) * 1994-12-29 1996-07-23 Toyo Tanso Kk 化学蒸着法による炭化ケイ素成形体及びその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001158666A (ja) 1999-11-26 2001-06-12 Toshiba Ceramics Co Ltd ＣＶＤ−ＳｉＣ自立膜構造体、及びその製造方法
JP2009295728A (ja) 2008-06-04 2009-12-17 Hitachi Cable Ltd 炭化珪素半導体基板およびその製造方法

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