JP7313509B2 - プラズマ処理装置、温度制御方法および温度制御プログラム - Google Patents

プラズマ処理装置、温度制御方法および温度制御プログラム Download PDF

Info

Publication number
JP7313509B2
JP7313509B2 JP2022075699A JP2022075699A JP7313509B2 JP 7313509 B2 JP7313509 B2 JP 7313509B2 JP 2022075699 A JP2022075699 A JP 2022075699A JP 2022075699 A JP2022075699 A JP 2022075699A JP 7313509 B2 JP7313509 B2 JP 7313509B2
Authority
JP
Japan
Prior art keywords
heater
temperature
plasma
wafer
thermal resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022075699A
Other languages
English (en)
Japanese (ja)
Other versions
JP2022103245A (ja
JP2022103245A5 (https=
Inventor
信介 岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2018160931A external-priority patent/JP7068971B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JP2022103245A publication Critical patent/JP2022103245A/ja
Publication of JP2022103245A5 publication Critical patent/JP2022103245A5/ja
Application granted granted Critical
Publication of JP7313509B2 publication Critical patent/JP7313509B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Control Of Temperature (AREA)
JP2022075699A 2017-11-16 2022-05-02 プラズマ処理装置、温度制御方法および温度制御プログラム Active JP7313509B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017221223 2017-11-16
JP2017221223 2017-11-16
JP2018160931A JP7068971B2 (ja) 2017-11-16 2018-08-30 プラズマ処理装置、温度制御方法および温度制御プログラム

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2018160931A Division JP7068971B2 (ja) 2017-11-16 2018-08-30 プラズマ処理装置、温度制御方法および温度制御プログラム

Publications (3)

Publication Number Publication Date
JP2022103245A JP2022103245A (ja) 2022-07-07
JP2022103245A5 JP2022103245A5 (https=) 2022-08-10
JP7313509B2 true JP7313509B2 (ja) 2023-07-24

Family

ID=66432379

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022075699A Active JP7313509B2 (ja) 2017-11-16 2022-05-02 プラズマ処理装置、温度制御方法および温度制御プログラム

Country Status (5)

Country Link
US (2) US11557468B2 (https=)
JP (1) JP7313509B2 (https=)
KR (2) KR102545993B1 (https=)
CN (1) CN109801828B (https=)
TW (1) TWI829367B (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI829367B (zh) * 2017-11-16 2024-01-11 日商東京威力科創股份有限公司 電漿處理裝置、溫度控制方法及溫度控制程式
EP3760994A4 (en) * 2018-04-10 2021-05-05 Panasonic Intellectual Property Management Co., Ltd. METHOD OF MEASURING THE AMOUNT OF HEAT GENERATED AND DEVICE FOR MEASURING THE AMOUNT OF HEAT GENERATED
JP7106358B2 (ja) * 2018-06-08 2022-07-26 東京エレクトロン株式会社 プラズマ処理装置及び温度制御方法
US11488808B2 (en) * 2018-11-30 2022-11-01 Tokyo Electron Limited Plasma processing apparatus, calculation method, and calculation program
US11533783B2 (en) 2019-07-18 2022-12-20 Applied Materials, Inc. Multi-zone heater model-based control in semiconductor manufacturing
DE102019005093A1 (de) * 2019-07-22 2021-01-28 Att Advanced Temperature Test Systems Gmbh Verfahren zur temperatursteuerung bzw. -regelung eines chucks für einen wafer, eine temperiereinrichtung zum temperieren eines chucks sowie ein wafertestsystem zum testen eines wafers
JP7270494B2 (ja) * 2019-07-24 2023-05-10 東京エレクトロン株式会社 温度調整装置
JP7426915B2 (ja) * 2020-09-14 2024-02-02 東京エレクトロン株式会社 プラズマ処理装置、熱抵抗導出方法及び熱抵抗導出プログラム
JP7718804B2 (ja) * 2020-09-14 2025-08-05 株式会社Kelk ウェーハの温度調節装置
KR102876266B1 (ko) * 2021-11-22 2025-10-28 주식회사 원익아이피에스 기판 지지 장치 및 이를 포함하는 기판 처리 장치
JPWO2024034355A1 (https=) * 2022-08-09 2024-02-15
KR102856742B1 (ko) * 2023-08-17 2025-09-08 주식회사 원익아이피에스 기판처리장치 및 기판처리방법
TWI887982B (zh) * 2024-01-26 2025-06-21 漢唐科技股份有限公司 具有自動顯示老化狀態功能之抗氧化環境控制系統

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009302390A (ja) 2008-06-16 2009-12-24 Hitachi High-Technologies Corp 試料温度の制御方法
JP2010050178A (ja) 2008-08-20 2010-03-04 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理方法
JP2016192566A (ja) 2015-01-16 2016-11-10 Toto株式会社 静電チャック
JP2017011169A (ja) 2015-06-24 2017-01-12 東京エレクトロン株式会社 温度制御方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910000273B1 (ko) * 1985-05-09 1991-01-23 마쯔시다덴기산교 가부시기가이샤 플라즈마 처리장치
TW262566B (https=) * 1993-07-02 1995-11-11 Tokyo Electron Co Ltd
US5942042A (en) * 1997-05-23 1999-08-24 Applied Materials, Inc. Apparatus for improved power coupling through a workpiece in a semiconductor wafer processing system
JP2003197609A (ja) 2001-12-27 2003-07-11 Tokyo Electron Ltd プラズマ処理装置の監視方法及びプラズマ処理装置
CN100367460C (zh) * 2003-10-30 2008-02-06 东京毅力科创株式会社 热处理装置及热处理方法
US7126091B1 (en) * 2005-03-23 2006-10-24 Eclipse Energy Systems, Inc. Workpiece holder for vacuum processing
JP5203612B2 (ja) 2007-01-17 2013-06-05 株式会社日立ハイテクノロジーズ プラズマ処理装置
US8133359B2 (en) * 2007-11-16 2012-03-13 Advanced Energy Industries, Inc. Methods and apparatus for sputtering deposition using direct current
JP4450106B1 (ja) * 2008-03-11 2010-04-14 東京エレクトロン株式会社 載置台構造及び処理装置
US9155134B2 (en) * 2008-10-17 2015-10-06 Applied Materials, Inc. Methods and apparatus for rapidly responsive heat control in plasma processing devices
JP5430192B2 (ja) * 2009-03-19 2014-02-26 東京エレクトロン株式会社 温度調節装置、温度調節方法、基板処理装置及び対向電極
JP5657262B2 (ja) * 2009-03-27 2015-01-21 東京エレクトロン株式会社 プラズマ処理装置
JP6066728B2 (ja) 2009-12-15 2017-01-25 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ Ｃｄの均一性を向上させるための基板温度調整を行う方法及びプラズマエッチングシステム
JP5606063B2 (ja) * 2009-12-28 2014-10-15 東京エレクトロン株式会社 プラズマ処理装置
WO2013033340A1 (en) * 2011-08-30 2013-03-07 Watlow Electric Manufacturing Company Thermal array system
JP6378942B2 (ja) 2014-06-12 2018-08-22 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP6525751B2 (ja) * 2015-06-11 2019-06-05 東京エレクトロン株式会社 温度制御方法及びプラズマ処理装置
TWI829367B (zh) * 2017-11-16 2024-01-11 日商東京威力科創股份有限公司 電漿處理裝置、溫度控制方法及溫度控制程式

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009302390A (ja) 2008-06-16 2009-12-24 Hitachi High-Technologies Corp 試料温度の制御方法
JP2010050178A (ja) 2008-08-20 2010-03-04 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理方法
JP2016192566A (ja) 2015-01-16 2016-11-10 Toto株式会社 静電チャック
JP2017011169A (ja) 2015-06-24 2017-01-12 東京エレクトロン株式会社 温度制御方法

Also Published As

Publication number Publication date
US20190148120A1 (en) 2019-05-16
CN109801828B (zh) 2021-06-01
CN109801828A (zh) 2019-05-24
US11557468B2 (en) 2023-01-17
KR102759935B1 (ko) 2025-01-23
KR102545993B1 (ko) 2023-06-20
US20230087979A1 (en) 2023-03-23
TWI829367B (zh) 2024-01-11
KR20230095891A (ko) 2023-06-29
KR20190056323A (ko) 2019-05-24
TW202303756A (zh) 2023-01-16
JP2022103245A (ja) 2022-07-07
US12087559B2 (en) 2024-09-10

Similar Documents

Publication Publication Date Title
JP7313509B2 (ja) プラズマ処理装置、温度制御方法および温度制御プログラム
JP7068971B2 (ja) プラズマ処理装置、温度制御方法および温度制御プログラム
JP7244348B2 (ja) プラズマ処理装置、温度制御方法および温度制御プログラム
JP7446495B2 (ja) プラズマ処理装置、算出方法および算出プログラム
CN111009454B (zh) 等离子体处理装置、监视方法以及记录介质
JP7202972B2 (ja) プラズマ処理装置、プラズマ状態検出方法およびプラズマ状態検出プログラム
JP2023099617A (ja) プラズマ処理装置、監視方法および監視プログラム
JP7214562B2 (ja) プラズマ処理装置、算出方法および算出プログラム
JP7527342B2 (ja) プラズマ処理装置、プラズマ状態検出方法およびプラズマ状態検出プログラム

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220601

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220802

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20230330

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230411

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230608

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20230613

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20230711

R150 Certificate of patent or registration of utility model

Ref document number: 7313509

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150