TWI829367B - 電漿處理裝置、溫度控制方法及溫度控制程式 - Google Patents

電漿處理裝置、溫度控制方法及溫度控制程式 Download PDF

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Publication number
TWI829367B
TWI829367B TW111136669A TW111136669A TWI829367B TW I829367 B TWI829367 B TW I829367B TW 111136669 A TW111136669 A TW 111136669A TW 111136669 A TW111136669 A TW 111136669A TW I829367 B TWI829367 B TW I829367B
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TW
Taiwan
Prior art keywords
heater
temperature
plasma
wafer
thermal resistance
Prior art date
Application number
TW111136669A
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English (en)
Chinese (zh)
Other versions
TW202303756A (zh
Inventor
岡信介
Original Assignee
日商東京威力科創股份有限公司
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Priority claimed from JP2018160931A external-priority patent/JP7068971B2/ja
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202303756A publication Critical patent/TW202303756A/zh
Application granted granted Critical
Publication of TWI829367B publication Critical patent/TWI829367B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Control Of Temperature (AREA)
TW111136669A 2017-11-16 2018-11-08 電漿處理裝置、溫度控制方法及溫度控制程式 TWI829367B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2017221223 2017-11-16
JP2017-221223 2017-11-16
JP2018160931A JP7068971B2 (ja) 2017-11-16 2018-08-30 プラズマ処理装置、温度制御方法および温度制御プログラム
JP2018-160931 2018-08-30

Publications (2)

Publication Number Publication Date
TW202303756A TW202303756A (zh) 2023-01-16
TWI829367B true TWI829367B (zh) 2024-01-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW111136669A TWI829367B (zh) 2017-11-16 2018-11-08 電漿處理裝置、溫度控制方法及溫度控制程式

Country Status (5)

Country Link
US (2) US11557468B2 (https=)
JP (1) JP7313509B2 (https=)
KR (2) KR102545993B1 (https=)
CN (1) CN109801828B (https=)
TW (1) TWI829367B (https=)

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TWI829367B (zh) * 2017-11-16 2024-01-11 日商東京威力科創股份有限公司 電漿處理裝置、溫度控制方法及溫度控制程式
EP3760994A4 (en) * 2018-04-10 2021-05-05 Panasonic Intellectual Property Management Co., Ltd. METHOD OF MEASURING THE AMOUNT OF HEAT GENERATED AND DEVICE FOR MEASURING THE AMOUNT OF HEAT GENERATED
JP7106358B2 (ja) * 2018-06-08 2022-07-26 東京エレクトロン株式会社 プラズマ処理装置及び温度制御方法
US11488808B2 (en) * 2018-11-30 2022-11-01 Tokyo Electron Limited Plasma processing apparatus, calculation method, and calculation program
US11533783B2 (en) 2019-07-18 2022-12-20 Applied Materials, Inc. Multi-zone heater model-based control in semiconductor manufacturing
DE102019005093A1 (de) * 2019-07-22 2021-01-28 Att Advanced Temperature Test Systems Gmbh Verfahren zur temperatursteuerung bzw. -regelung eines chucks für einen wafer, eine temperiereinrichtung zum temperieren eines chucks sowie ein wafertestsystem zum testen eines wafers
JP7270494B2 (ja) * 2019-07-24 2023-05-10 東京エレクトロン株式会社 温度調整装置
JP7426915B2 (ja) * 2020-09-14 2024-02-02 東京エレクトロン株式会社 プラズマ処理装置、熱抵抗導出方法及び熱抵抗導出プログラム
JP7718804B2 (ja) * 2020-09-14 2025-08-05 株式会社Kelk ウェーハの温度調節装置
KR102876266B1 (ko) * 2021-11-22 2025-10-28 주식회사 원익아이피에스 기판 지지 장치 및 이를 포함하는 기판 처리 장치
JPWO2024034355A1 (https=) * 2022-08-09 2024-02-15
KR102856742B1 (ko) * 2023-08-17 2025-09-08 주식회사 원익아이피에스 기판처리장치 및 기판처리방법
TWI887982B (zh) * 2024-01-26 2025-06-21 漢唐科技股份有限公司 具有自動顯示老化狀態功能之抗氧化環境控制系統

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TW200930159A (en) * 2007-11-16 2009-07-01 Advanced Energy Ind Inc Methods and apparatus for sputtering deposition using direct current
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US20160378092A1 (en) * 2015-06-24 2016-12-29 Tokyo Electron Limited Temperature control method

Also Published As

Publication number Publication date
JP7313509B2 (ja) 2023-07-24
US20190148120A1 (en) 2019-05-16
CN109801828B (zh) 2021-06-01
CN109801828A (zh) 2019-05-24
US11557468B2 (en) 2023-01-17
KR102759935B1 (ko) 2025-01-23
KR102545993B1 (ko) 2023-06-20
US20230087979A1 (en) 2023-03-23
KR20230095891A (ko) 2023-06-29
KR20190056323A (ko) 2019-05-24
TW202303756A (zh) 2023-01-16
JP2022103245A (ja) 2022-07-07
US12087559B2 (en) 2024-09-10

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