JP7311939B2 - 高電圧ゲートドライバ電流源 - Google Patents

高電圧ゲートドライバ電流源 Download PDF

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Publication number
JP7311939B2
JP7311939B2 JP2020524778A JP2020524778A JP7311939B2 JP 7311939 B2 JP7311939 B2 JP 7311939B2 JP 2020524778 A JP2020524778 A JP 2020524778A JP 2020524778 A JP2020524778 A JP 2020524778A JP 7311939 B2 JP7311939 B2 JP 7311939B2
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Prior art keywords
power
gate
cascode
voltage
source
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JP2020524778A
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Japanese (ja)
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JP2021502049A (ja
JP2021502049A5 (enExample
Inventor
クンダプール マノハール スジャン
ジェームズ ミルズ マイケル
パトリック ヴォクト ジャスティン
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テキサス インスツルメンツ インコーポレイテッド
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
    • H03K17/145—Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/56—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
    • G05F1/59—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices including plural semiconductor devices as final control devices for a single load
    • G05F1/595—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices including plural semiconductor devices as final control devices for a single load semiconductor devices connected in series
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/38—Information transfer, e.g. on bus
    • G06F13/42—Bus transfer protocol, e.g. handshake; Synchronisation
    • G06F13/4282—Bus transfer protocol, e.g. handshake; Synchronisation on a serial bus, e.g. I2C bus, SPI bus
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/30—Modifications for providing a predetermined threshold before switching
    • H03K2017/307—Modifications for providing a predetermined threshold before switching circuits simulating a diode, e.g. threshold zero
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0081—Power supply means, e.g. to the switch driver

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Theoretical Computer Science (AREA)
  • Nonlinear Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
JP2020524778A 2017-11-03 2018-11-02 高電圧ゲートドライバ電流源 Active JP7311939B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/802,787 US10659033B2 (en) 2017-11-03 2017-11-03 High voltage gate driver current source
US15/802,787 2017-11-03
PCT/US2018/058832 WO2019090012A1 (en) 2017-11-03 2018-11-02 High voltage gate driver current source

Publications (3)

Publication Number Publication Date
JP2021502049A JP2021502049A (ja) 2021-01-21
JP2021502049A5 JP2021502049A5 (enExample) 2021-12-09
JP7311939B2 true JP7311939B2 (ja) 2023-07-20

Family

ID=66327722

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020524778A Active JP7311939B2 (ja) 2017-11-03 2018-11-02 高電圧ゲートドライバ電流源

Country Status (5)

Country Link
US (2) US10659033B2 (enExample)
EP (1) EP3704557A4 (enExample)
JP (1) JP7311939B2 (enExample)
CN (2) CN113765508B (enExample)
WO (1) WO2019090012A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10659033B2 (en) * 2017-11-03 2020-05-19 Texas Instruments Incorporated High voltage gate driver current source
US10627846B1 (en) * 2018-11-30 2020-04-21 Vidatronic, Inc. Method and apparatus for low-output-noise, high-power-supply-rejection and high-precision trimmable band-gap voltage reference suitable for production test
US10756644B1 (en) 2019-08-22 2020-08-25 Cypress Semiconductor Corporation Controlled gate-source voltage N-channel field effect transistor (NFET) gate driver
US11100034B1 (en) * 2020-02-21 2021-08-24 Cypress Semiconductor Corporation Dual integrated gate-driver with reverse current fault protection for USB Type-C and USB power delivery
JP7631181B2 (ja) * 2021-12-22 2025-02-18 ルネサスエレクトロニクス株式会社 半導体装置
CN115097893B (zh) * 2022-08-15 2023-08-18 深圳清华大学研究院 输出无外挂电容的ldo电路及mcu芯片
US12114422B2 (en) * 2022-12-16 2024-10-08 Bae Systems Controls Inc. High voltage gate drive circuitry

Citations (4)

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JP2001060303A (ja) 1999-08-23 2001-03-06 Hitachi Ltd 磁気ディスク装置
US20170047731A1 (en) 2015-08-10 2017-02-16 Texas Instruments Incorporated Reverse Current Protection Circuit
JP2017163722A (ja) 2016-03-10 2017-09-14 サンケン電気株式会社 ゲート駆動回路
US20170317583A1 (en) 2016-04-28 2017-11-02 Texas Instruments Incorporated Fast Turn-On Power Switch

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JP3456904B2 (ja) 1998-09-16 2003-10-14 松下電器産業株式会社 突入電流抑制手段を備えた電源回路、およびこの電源回路を備えた集積回路
US6124705A (en) * 1999-08-20 2000-09-26 Lucent Technologies Inc. Cascode current mirror with amplifier
JP2003202925A (ja) * 2001-11-26 2003-07-18 Em Microelectronic Marin Sa 高電圧用途のための定電流源回路
US7960997B2 (en) * 2007-08-08 2011-06-14 Advanced Analogic Technologies, Inc. Cascode current sensor for discrete power semiconductor devices
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US8184488B2 (en) * 2009-11-20 2012-05-22 Silicon Laboratories Inc. Systems and methods for controlling integrated circuit operation with below ground pin voltage
JP5738749B2 (ja) * 2011-12-15 2015-06-24 ルネサスエレクトロニクス株式会社 Ｐｌｌ回路
CN103187955B (zh) * 2011-12-31 2016-08-03 意法半导体研发（上海）有限公司 共栅共源驱动电路
JP5477407B2 (ja) 2012-02-16 2014-04-23 株式会社デンソー ゲート駆動回路
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JP6202970B2 (ja) 2013-10-02 2017-09-27 株式会社アイ・ライティング・システム 突入電流防止回路及び電源装置
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US10659033B2 (en) * 2017-11-03 2020-05-19 Texas Instruments Incorporated High voltage gate driver current source

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001060303A (ja) 1999-08-23 2001-03-06 Hitachi Ltd 磁気ディスク装置
US20170047731A1 (en) 2015-08-10 2017-02-16 Texas Instruments Incorporated Reverse Current Protection Circuit
JP2017163722A (ja) 2016-03-10 2017-09-14 サンケン電気株式会社 ゲート駆動回路
US20170317583A1 (en) 2016-04-28 2017-11-02 Texas Instruments Incorporated Fast Turn-On Power Switch

Also Published As

Publication number Publication date
CN113765508B (zh) 2024-07-09
US10659033B2 (en) 2020-05-19
CN113765508A (zh) 2021-12-07
WO2019090012A1 (en) 2019-05-09
US20200280309A1 (en) 2020-09-03
JP2021502049A (ja) 2021-01-21
US11575372B2 (en) 2023-02-07
CN111316189B (zh) 2021-10-15
US20190140631A1 (en) 2019-05-09
EP3704557A1 (en) 2020-09-09
CN111316189A (zh) 2020-06-19
EP3704557A4 (en) 2021-05-12

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