JP7310471B2 - パターン形成方法及び組成物 - Google Patents

パターン形成方法及び組成物 Download PDF

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Publication number
JP7310471B2
JP7310471B2 JP2019166674A JP2019166674A JP7310471B2 JP 7310471 B2 JP7310471 B2 JP 7310471B2 JP 2019166674 A JP2019166674 A JP 2019166674A JP 2019166674 A JP2019166674 A JP 2019166674A JP 7310471 B2 JP7310471 B2 JP 7310471B2
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group
polymer
composition
acid
atom
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JP2019166674A
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Japanese (ja)
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JP2021041364A (ja
JP2021041364A5 (https=
Inventor
裕之 小松
宗大 白谷
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JSR Corp
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JSR Corp
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Priority to JP2019166674A priority Critical patent/JP7310471B2/ja
Priority to US17/018,169 priority patent/US11270883B2/en
Publication of JP2021041364A publication Critical patent/JP2021041364A/ja
Publication of JP2021041364A5 publication Critical patent/JP2021041364A5/ja
Priority to US17/583,270 priority patent/US12332563B2/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00—Chemical modification by after-treatment
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D129/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal, or ketal radical; Coating compositions based on hydrolysed polymers of esters of unsaturated alcohols with saturated carboxylic acids; Coating compositions based on derivatives of such polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6528—In-situ cleaning after layer formation, e.g. removing process residues
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Materials For Photolithography (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2019166674A 2019-09-12 2019-09-12 パターン形成方法及び組成物 Active JP7310471B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2019166674A JP7310471B2 (ja) 2019-09-12 2019-09-12 パターン形成方法及び組成物
US17/018,169 US11270883B2 (en) 2019-09-12 2020-09-11 Pattern-forming method and composition
US17/583,270 US12332563B2 (en) 2019-09-12 2022-01-25 Pattern-forming method and composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019166674A JP7310471B2 (ja) 2019-09-12 2019-09-12 パターン形成方法及び組成物

Publications (3)

Publication Number Publication Date
JP2021041364A JP2021041364A (ja) 2021-03-18
JP2021041364A5 JP2021041364A5 (https=) 2022-01-21
JP7310471B2 true JP7310471B2 (ja) 2023-07-19

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JP2019166674A Active JP7310471B2 (ja) 2019-09-12 2019-09-12 パターン形成方法及び組成物

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US (2) US11270883B2 (https=)
JP (1) JP7310471B2 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021095766A1 (ja) * 2019-11-12 2021-05-20 Jsr株式会社 組成物、基板の製造方法及び重合体

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015044186A (ja) 2013-07-31 2015-03-12 東京応化工業株式会社 相分離構造体の製造方法、パターン形成方法及び微細パターン形成方法
WO2018235877A1 (ja) 2017-06-21 2018-12-27 Jsr株式会社 カバー膜形成方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0789279B2 (en) * 1996-02-09 2004-12-08 Wako Pure Chemical Industries Ltd Polymer and resist material
US7125938B2 (en) * 1997-03-11 2006-10-24 Carnegie Mellon University Atom or group transfer radical polymerization
US7696292B2 (en) * 2003-09-22 2010-04-13 Commonwealth Scientific And Industrial Research Organisation Low-polydispersity photoimageable acrylic polymers, photoresists and processes for microlithography
US7408013B2 (en) * 2003-09-23 2008-08-05 Commonwealth Scientific And Industrial Research Organization Low-polydispersity photoimageable polymers and photoresists and processes for microlithography
WO2008072624A1 (ja) * 2006-12-13 2008-06-19 Nissan Chemical Industries, Ltd. 低分子溶解促進剤を含むレジスト下層膜形成組成物
JP6075369B2 (ja) * 2012-03-14 2017-02-08 Jsr株式会社 フォトレジスト組成物、レジストパターン形成方法及び酸拡散制御剤
US10457088B2 (en) * 2013-05-13 2019-10-29 Ridgefield Acquisition Template for self assembly and method of making a self assembled pattern
US20160306278A1 (en) * 2015-04-20 2016-10-20 Tokyo Ohka Kogyo Co., Ltd. Chemical for photolithography with improved liquid transfer property and resist composition comprising the same
KR102426440B1 (ko) 2016-09-01 2022-07-29 제이에스알 가부시끼가이샤 기재 표면의 선택적 수식 방법 및 조성물
US11360387B2 (en) * 2017-08-04 2022-06-14 Rohm And Haas Electronic Materials Llc Silicon-containing underlayers
US20190146343A1 (en) * 2017-11-10 2019-05-16 Rohm And Haas Electronic Materials Llc Silicon-containing underlayers

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015044186A (ja) 2013-07-31 2015-03-12 東京応化工業株式会社 相分離構造体の製造方法、パターン形成方法及び微細パターン形成方法
WO2018235877A1 (ja) 2017-06-21 2018-12-27 Jsr株式会社 カバー膜形成方法

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Publication number Publication date
JP2021041364A (ja) 2021-03-18
US20220145113A1 (en) 2022-05-12
US11270883B2 (en) 2022-03-08
US20210082689A1 (en) 2021-03-18
US12332563B2 (en) 2025-06-17

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