JP7309799B2 - エッチング方法及びプラズマ処理装置 - Google Patents

エッチング方法及びプラズマ処理装置 Download PDF

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JP7309799B2
JP7309799B2 JP2021163664A JP2021163664A JP7309799B2 JP 7309799 B2 JP7309799 B2 JP 7309799B2 JP 2021163664 A JP2021163664 A JP 2021163664A JP 2021163664 A JP2021163664 A JP 2021163664A JP 7309799 B2 JP7309799 B2 JP 7309799B2
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Japan
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gas
silicon
substrate support
voltage
negative
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Japanese (ja)
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JP2022074000A (ja
JP2022074000A5 (https=
Inventor
光貴 千野
彦一郎 佐々木
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2021163664A priority Critical patent/JP7309799B2/ja
Priority to TW110138668A priority patent/TWI920152B/zh
Priority to KR1020210141033A priority patent/KR20220058433A/ko
Priority to CN202111228868.3A priority patent/CN114446778A/zh
Priority to US17/514,888 priority patent/US12198937B2/en
Publication of JP2022074000A publication Critical patent/JP2022074000A/ja
Publication of JP2022074000A5 publication Critical patent/JP2022074000A5/ja
Priority to JP2023110641A priority patent/JP7556099B2/ja
Application granted granted Critical
Publication of JP7309799B2 publication Critical patent/JP7309799B2/ja
Priority to JP2024157382A priority patent/JP7774687B2/ja
Priority to US19/017,838 priority patent/US20250149342A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP2021163664A 2020-10-30 2021-10-04 エッチング方法及びプラズマ処理装置 Active JP7309799B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2021163664A JP7309799B2 (ja) 2020-10-30 2021-10-04 エッチング方法及びプラズマ処理装置
TW110138668A TWI920152B (zh) 2020-10-30 2021-10-19 蝕刻方法及電漿處理裝置
CN202111228868.3A CN114446778A (zh) 2020-10-30 2021-10-21 蚀刻方法和等离子体处理装置
KR1020210141033A KR20220058433A (ko) 2020-10-30 2021-10-21 에칭 방법 및 플라즈마 처리 장치
US17/514,888 US12198937B2 (en) 2020-10-30 2021-10-29 Etching method and plasma processing apparatus
JP2023110641A JP7556099B2 (ja) 2020-10-30 2023-07-05 プラズマ処理装置
JP2024157382A JP7774687B2 (ja) 2020-10-30 2024-09-11 プラズマ処理装置
US19/017,838 US20250149342A1 (en) 2020-10-30 2025-01-13 Etching method and plasma processing apparatus

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020182345 2020-10-30
JP2020182345 2020-10-30
JP2021163664A JP7309799B2 (ja) 2020-10-30 2021-10-04 エッチング方法及びプラズマ処理装置

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JP2023110641A Division JP7556099B2 (ja) 2020-10-30 2023-07-05 プラズマ処理装置

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JP2022074000A JP2022074000A (ja) 2022-05-17
JP2022074000A5 JP2022074000A5 (https=) 2023-02-16
JP7309799B2 true JP7309799B2 (ja) 2023-07-18

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JP2023110641A Active JP7556099B2 (ja) 2020-10-30 2023-07-05 プラズマ処理装置
JP2024157382A Active JP7774687B2 (ja) 2020-10-30 2024-09-11 プラズマ処理装置

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JP2024157382A Active JP7774687B2 (ja) 2020-10-30 2024-09-11 プラズマ処理装置

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US (2) US12198937B2 (https=)
JP (3) JP7309799B2 (https=)
KR (1) KR20220058433A (https=)
CN (1) CN114446778A (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210210355A1 (en) * 2020-01-08 2021-07-08 Tokyo Electron Limited Methods of Plasma Processing Using a Pulsed Electron Beam
TW202414581A (zh) * 2021-06-22 2024-04-01 日商東京威力科創股份有限公司 蝕刻方法及電漿處理裝置
JP2024053900A (ja) * 2022-10-04 2024-04-16 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US20240332029A1 (en) * 2023-03-28 2024-10-03 Tokyo Electron Limited High aspect ratio contact etching with additive gas
US20250293041A1 (en) * 2024-03-12 2025-09-18 Tokyo Electron Limited Cyclic etch/deposition plasma processes using tungsten based precursor gas
US20260011555A1 (en) * 2024-07-02 2026-01-08 Tokyo Electron Limited Selective deposition on an existing patterned mask

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019192874A (ja) 2018-04-27 2019-10-31 東京エレクトロン株式会社 エッチング装置、及びエッチング方法
JP2019192876A (ja) 2018-04-27 2019-10-31 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US20200090945A1 (en) 2018-06-26 2020-03-19 Lam Research Corporation Method of achieving high selectivity for high aspect ratio dielectric etch
US20200126804A1 (en) 2018-10-19 2020-04-23 Lam Research Corporation Reduction of sidewall notching for high aspect ratio 3d nand etch
WO2020145051A1 (ja) 2019-01-09 2020-07-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0950984A (ja) 1995-08-07 1997-02-18 Hitachi Ltd 表面処理方法
JP6230930B2 (ja) * 2014-02-17 2017-11-15 東京エレクトロン株式会社 半導体装置の製造方法
JP6883495B2 (ja) * 2017-09-04 2021-06-09 東京エレクトロン株式会社 エッチング方法
JP7022651B2 (ja) * 2018-05-28 2022-02-18 東京エレクトロン株式会社 膜をエッチングする方法及びプラズマ処理装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019192874A (ja) 2018-04-27 2019-10-31 東京エレクトロン株式会社 エッチング装置、及びエッチング方法
JP2019192876A (ja) 2018-04-27 2019-10-31 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US20200090945A1 (en) 2018-06-26 2020-03-19 Lam Research Corporation Method of achieving high selectivity for high aspect ratio dielectric etch
US20200126804A1 (en) 2018-10-19 2020-04-23 Lam Research Corporation Reduction of sidewall notching for high aspect ratio 3d nand etch
WO2020145051A1 (ja) 2019-01-09 2020-07-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

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Publication number Publication date
JP7774687B2 (ja) 2025-11-21
TW202232567A (zh) 2022-08-16
JP2022074000A (ja) 2022-05-17
US12198937B2 (en) 2025-01-14
US20250149342A1 (en) 2025-05-08
US20220139719A1 (en) 2022-05-05
JP2023118883A (ja) 2023-08-25
KR20220058433A (ko) 2022-05-09
JP2024167422A (ja) 2024-12-03
CN114446778A (zh) 2022-05-06
JP7556099B2 (ja) 2024-09-25

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