JP7306886B2 - 制御方法及びプラズマ処理装置 - Google Patents

制御方法及びプラズマ処理装置 Download PDF

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JP7306886B2
JP7306886B2 JP2019108223A JP2019108223A JP7306886B2 JP 7306886 B2 JP7306886 B2 JP 7306886B2 JP 2019108223 A JP2019108223 A JP 2019108223A JP 2019108223 A JP2019108223 A JP 2019108223A JP 7306886 B2 JP7306886 B2 JP 7306886B2
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voltage
period
bias power
state
negative
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JP2020025083A (ja
JP2020025083A5 (https=
Inventor
地塩 輿水
紳治 久保田
幸児 丸山
隆 道菅
幸一 永海
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to US16/978,193 priority Critical patent/US11764082B2/en
Priority to PCT/JP2019/028024 priority patent/WO2020026802A1/ja
Priority to KR1020207025237A priority patent/KR102841325B1/ko
Priority to CN201980017608.6A priority patent/CN111819664B/zh
Priority to TW108126448A priority patent/TWI835826B/zh
Publication of JP2020025083A publication Critical patent/JP2020025083A/ja
Publication of JP2020025083A5 publication Critical patent/JP2020025083A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H01J37/32045—Circuits specially adapted for controlling the glow discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3347—Problems associated with etching bottom of holes or trenches

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2019108223A 2018-07-30 2019-06-10 制御方法及びプラズマ処理装置 Active JP7306886B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US16/978,193 US11764082B2 (en) 2018-07-30 2019-07-17 Control method and plasma processing apparatus
PCT/JP2019/028024 WO2020026802A1 (ja) 2018-07-30 2019-07-17 制御方法及びプラズマ処理装置
KR1020207025237A KR102841325B1 (ko) 2018-07-30 2019-07-17 제어 방법 및 플라즈마 처리 장치
CN201980017608.6A CN111819664B (zh) 2018-07-30 2019-07-17 控制方法和等离子体处理装置
TW108126448A TWI835826B (zh) 2018-07-30 2019-07-26 電漿處理裝置之控制方法及電漿處理裝置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018142855 2018-07-30
JP2018142855 2018-07-30

Publications (3)

Publication Number Publication Date
JP2020025083A JP2020025083A (ja) 2020-02-13
JP2020025083A5 JP2020025083A5 (https=) 2022-05-06
JP7306886B2 true JP7306886B2 (ja) 2023-07-11

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JP2019108223A Active JP7306886B2 (ja) 2018-07-30 2019-06-10 制御方法及びプラズマ処理装置

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US (1) US11764082B2 (https=)
JP (1) JP7306886B2 (https=)
KR (1) KR102841325B1 (https=)
CN (1) CN111819664B (https=)
TW (1) TWI835826B (https=)

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US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
JP7534235B2 (ja) * 2021-02-01 2024-08-14 東京エレクトロン株式会社 フィルタ回路及びプラズマ処理装置
JP7576484B2 (ja) * 2021-02-16 2024-10-31 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US12525441B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US12148595B2 (en) 2021-06-09 2024-11-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US12525433B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Method and apparatus to reduce feature charging in plasma processing chamber
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US12586768B2 (en) 2022-08-10 2026-03-24 Applied Materials, Inc. Pulsed voltage compensation for plasma processing applications
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CN115715048A (zh) * 2022-09-26 2023-02-24 北京临近空间飞行器系统工程研究所 一种高超声速飞行器等离子体密度在线诊断方法及系统
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Also Published As

Publication number Publication date
TW202013501A (zh) 2020-04-01
KR20210035072A (ko) 2021-03-31
US11764082B2 (en) 2023-09-19
US20210043472A1 (en) 2021-02-11
JP2020025083A (ja) 2020-02-13
CN111819664B (zh) 2024-04-12
TWI835826B (zh) 2024-03-21
CN111819664A (zh) 2020-10-23
KR102841325B1 (ko) 2025-07-31

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