JP7305722B2 - 特定共振周波数を有する薄膜バルク音響共振装置を製造する方法 - Google Patents
特定共振周波数を有する薄膜バルク音響共振装置を製造する方法 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims description 37
- 238000000034 method Methods 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000000463 material Substances 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 2
- 239000012855 volatile organic compound Substances 0.000 description 6
- 238000001514 detection method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- BYHQTRFJOGIQAO-GOSISDBHSA-N 3-(4-bromophenyl)-8-[(2R)-2-hydroxypropyl]-1-[(3-methoxyphenyl)methyl]-1,3,8-triazaspiro[4.5]decan-2-one Chemical compound C[C@H](CN1CCC2(CC1)CN(C(=O)N2CC3=CC(=CC=C3)OC)C4=CC=C(C=C4)Br)O BYHQTRFJOGIQAO-GOSISDBHSA-N 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0421—Modification of the thickness of an element
- H03H2003/0442—Modification of the thickness of an element of a non-piezoelectric layer
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
Description
前記第一シリンダの第一直径は、例えば200μmである。エアギャップ11は、第二シリンダを形成し、前記第二シリンダの第二直径は、例えば140μmである。上部電極17は、第三シリンダを形成し、前記第三シリンダの第三直径は、例えば100μmである。
10 基板
11 エアギャップ(凹部)
12 第一絶縁層
13 第二絶縁層
14 第一圧電材料層
15 下部電極
16 第二圧電材料層
17 上部電極
Claims (9)
- 特定共振周波数を有する薄膜バルク音響共振装置を製造する方法であって、
凹部を有する基板を提供する工程であって、前記凹部が深さを有する前記工程と、
前記基板に第一絶縁層を配置し、前記第一絶縁層に第二絶縁層を配置し、前記第二絶縁層に第一圧電材料層を配置し、前記凹部を前記第一絶縁層と前記基板との間のエアギャップに形成する工程と、
前記第一圧電材料層に下部電極を配置し、前記下部電極と上部電極との間に第二圧電材料層を配置する工程と、
を含み、
前記深さが第一範囲にあると、前記薄膜バルク音響共振装置の共振周波数が前記深さに対して負の第一勾配を有し、前記深さが第二範囲にあると、前記共振周波数が前記深さに対して正の第二勾配を有し、前記第一勾配の絶対値が前記第二勾配の絶対値よりも小さいことを特徴とする方法。 - 前記エアギャップの内部は、真空状態を示すことを特徴とする請求項1に記載の方法。
- 前記基板は、シリコンを含み、
前記第一絶縁層は、窒化ケイ素を含み、
前記第二絶縁層は、二酸化ケイ素を含み、
前記上部電極及び前記下部電極は、モリブデンを含み、
前記第一圧電材料層及び前記第二圧電材料層は、窒化アルミニウム又はチタン酸ジルコン酸鉛を含むことを特徴とする請求項2に記載の方法。 - 前記深さは、1μm~5μmであり、
前記第一範囲は、1μm~3μmであり、
前記第二範囲は、3μm~5μmであり、
前記第一絶縁層、前記第二絶縁層、前記第一圧電材料層、前記上部電極及び前記下部電極の厚さは、すべて0.2μmであり、
前記第二圧電材料層の厚さは、1μmであることを特徴とする請求項2に記載の方法。 - 前記基板、前記第一絶縁層、前記第二絶縁層、前記第一圧電材料層、前記下部電極及び前記第二圧電材料層は、第一シリンダを形成し、
前記第一シリンダは、第一直径が200μmであり、
前記エアギャップは、第二シリンダを形成し、
前記第二シリンダは、第二直径が140μmであり、
前記上部電極は、第三シリンダを形成し、
前記第三シリンダは、第三直径が100μmであることを特徴とする請求項4に記載の方法。 - 前記特定共振周波数に対応する前記凹部の前記深さが前記第一範囲又は前記第二範囲にあることに応じて、特定の深さを選択して前記薄膜バルク音響共振装置を製造する工程を更に含み、
前記エアギャップの第一深さ変化量が1μmから3μmに増加すると、前記薄膜バルク音響共振装置の共振周波数が増加した第一変化量が24kHzであり、
前記エアギャップの第二深さ変化量が1μmから5μmに増加すると、前記薄膜バルク音響共振装置の前記共振周波数が増加した第二変化量が0.418MHzであることを特徴とする請求項4に記載の方法。 - 特定共振周波数を有する薄膜バルク音響共振装置を製造する方法であって、
凹部を有する基板を提供する工程であって、前記凹部が深さを有する前記工程と、
前記基板に第一絶縁層を配置し、前記第一絶縁層に第二絶縁層配置し、前記第二絶縁層に第一圧電材料層を配置し、前記凹部を前記第一絶縁層と前記基板との間のエアギャップを形成する工程と、
前記第一圧電材料層に下部電極を配置し、前記下部電極と上部電極との間に第二圧電材料層を配置する工程であって、前記深さが第一範囲にあると、前記薄膜バルク音響共振装置の共振周波数が前記深さに対する比例関係が逆比例の第一勾配によって定義され、前記深さが第二範囲にあると、前記比例関係が前記第一勾配の絶対値よりも大きい正比例の第二勾配によって定義される前記工程と、
前記特定共振周波数に対応する前記凹部の前記深さが前記第一範囲又は前記第二範囲にあることに応じて、特定の深さを選択して前記薄膜バルク音響共振装置を製造する工程と、を含むことを特徴とする方法。 - 前記エアギャップの内部は、真空状態を示し、
前記深さは、1μm~5μmであり、
前記第一範囲は、1μm~3μmであり、
前記第二範囲は、3μm~5μmであり、
前記第一絶縁層、前記第二絶縁層、前記第一圧電材料層、前記上部電極及び前記下部電極の厚さは、すべて0.2μmであり、
前記第二圧電材料層の厚さは、1μmであることを特徴とする請求項7に記載の方法。 - 前記基板は、シリコンを含み、
前記第一絶縁層は、窒化ケイ素を含み、
前記第二絶縁層は、二酸化ケイ素を含み、
前記上部電極及び前記下部電極は、モリブデンを含み、
前記第一圧電材料層及び前記第二圧電材料層は、窒化アルミニウム又はチタン酸ジルコン酸鉛を含むことを特徴とする請求項8に記載の方法。
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TW109136755A TWI721934B (zh) | 2020-10-22 | 2020-10-22 | 製造具特定共振頻率之薄膜體聲波共振裝置的方法 |
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JP2005160056A (ja) | 2003-11-07 | 2005-06-16 | Matsushita Electric Ind Co Ltd | 圧電デバイス及びアンテナ共用器並びにそれらに用いられる圧電共振器の製造方法 |
JP2005210681A (ja) | 2003-11-07 | 2005-08-04 | Matsushita Electric Ind Co Ltd | 圧電共振器、その製造方法、それを用いたフィルタ、共用器、および通信機器 |
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JP2010136317A (ja) | 2008-03-24 | 2010-06-17 | Ngk Insulators Ltd | バルク弾性波装置の製造方法 |
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JP2005210681A (ja) | 2003-11-07 | 2005-08-04 | Matsushita Electric Ind Co Ltd | 圧電共振器、その製造方法、それを用いたフィルタ、共用器、および通信機器 |
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JP2010136317A (ja) | 2008-03-24 | 2010-06-17 | Ngk Insulators Ltd | バルク弾性波装置の製造方法 |
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