JP7301530B2 - 光学装置および機器 - Google Patents

光学装置および機器 Download PDF

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Publication number
JP7301530B2
JP7301530B2 JP2018225866A JP2018225866A JP7301530B2 JP 7301530 B2 JP7301530 B2 JP 7301530B2 JP 2018225866 A JP2018225866 A JP 2018225866A JP 2018225866 A JP2018225866 A JP 2018225866A JP 7301530 B2 JP7301530 B2 JP 7301530B2
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Japan
Prior art keywords
layer
thickness
optical device
silicon nitride
lenses
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JP2018225866A
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English (en)
Japanese (ja)
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JP2020086408A (ja
JP2020086408A5 (enExample
Inventor
嘉久 河村
秀樹 稲
凌 吉田
幸伸 鈴木
紘司 原
善之 中川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2018225866A priority Critical patent/JP7301530B2/ja
Priority to US16/694,383 priority patent/US11332409B2/en
Publication of JP2020086408A publication Critical patent/JP2020086408A/ja
Publication of JP2020086408A5 publication Critical patent/JP2020086408A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Optical Elements Other Than Lenses (AREA)
JP2018225866A 2018-11-30 2018-11-30 光学装置および機器 Active JP7301530B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2018225866A JP7301530B2 (ja) 2018-11-30 2018-11-30 光学装置および機器
US16/694,383 US11332409B2 (en) 2018-11-30 2019-11-25 Optical apparatus and equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018225866A JP7301530B2 (ja) 2018-11-30 2018-11-30 光学装置および機器

Publications (3)

Publication Number Publication Date
JP2020086408A JP2020086408A (ja) 2020-06-04
JP2020086408A5 JP2020086408A5 (enExample) 2022-01-06
JP7301530B2 true JP7301530B2 (ja) 2023-07-03

Family

ID=70848833

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018225866A Active JP7301530B2 (ja) 2018-11-30 2018-11-30 光学装置および機器

Country Status (2)

Country Link
US (1) US11332409B2 (enExample)
JP (1) JP7301530B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210081892A (ko) * 2019-12-24 2021-07-02 삼성전자주식회사 이미지 센서 및 그 제조방법
US12191333B2 (en) * 2022-02-24 2025-01-07 Visera Technologies Company Limited Solid-state image sensor
CN114721182A (zh) * 2022-03-30 2022-07-08 上海天马微电子有限公司 显示面板及显示装置

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010010952A1 (en) 1999-12-23 2001-08-02 Irit Abramovich Color image sensor with embedded microlens array
JP2005174967A (ja) 2003-12-05 2005-06-30 Sharp Corp 半導体素子およびその製造方法
JP2006073885A (ja) 2004-09-03 2006-03-16 Canon Inc 固体撮像装置、その製造方法、およびデジタルカメラ
US20080048280A1 (en) 2004-11-16 2008-02-28 Matsushita Electric Industrial Co., Ltd. Light Receiving Device, Method for Fabricating Same, and Camera
JP2009021415A (ja) 2007-07-12 2009-01-29 Panasonic Corp 固体撮像装置およびその製造方法
JP2009260445A (ja) 2008-04-11 2009-11-05 Sharp Corp 固体撮像素子およびその製造方法、電子情報機器
US20140252521A1 (en) 2013-03-11 2014-09-11 Taiwan Semiconductor Manufacturing Company, Ltd. Image Sensor with Improved Dark Current Performance
JP2015230896A (ja) 2014-06-03 2015-12-21 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
JP2016052041A (ja) 2014-09-01 2016-04-11 ソニー株式会社 固体撮像素子及びその信号処理方法、並びに電子機器
JP2016219468A (ja) 2015-05-14 2016-12-22 キヤノン株式会社 固体撮像装置及びその製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3620237B2 (ja) * 1997-09-29 2005-02-16 ソニー株式会社 固体撮像素子
JP4909530B2 (ja) 2005-05-12 2012-04-04 富士フイルム株式会社 固体撮像素子の製造方法および固体撮像素子
JP2008060320A (ja) 2006-08-31 2008-03-13 Sony Corp 固体撮像素子及びその製造方法
JP2008071959A (ja) 2006-09-14 2008-03-27 Sony Corp 固体撮像素子
JP2008091771A (ja) 2006-10-04 2008-04-17 Matsushita Electric Ind Co Ltd 固体撮像装置およびその製造方法
JP2008108918A (ja) 2006-10-25 2008-05-08 Sony Corp 固体撮像素子
JP2008112944A (ja) 2006-10-31 2008-05-15 Sony Corp 固体撮像素子
JP5076679B2 (ja) 2007-06-28 2012-11-21 ソニー株式会社 固体撮像装置及びカメラモジュール
US8395686B2 (en) * 2007-12-06 2013-03-12 Sony Corporation Solid-state imaging device, method of manufacturing the same, and camera
JP2015176896A (ja) * 2014-03-13 2015-10-05 株式会社東芝 固体撮像装置用基板、固体撮像装置、固体撮像装置用基板の製造方法、および固体撮像装置の製造方法
WO2016052220A1 (ja) * 2014-10-01 2016-04-07 ソニー株式会社 固体撮像素子および製造方法、並びに電子機器
JP2017054966A (ja) * 2015-09-10 2017-03-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010010952A1 (en) 1999-12-23 2001-08-02 Irit Abramovich Color image sensor with embedded microlens array
JP2005174967A (ja) 2003-12-05 2005-06-30 Sharp Corp 半導体素子およびその製造方法
JP2006073885A (ja) 2004-09-03 2006-03-16 Canon Inc 固体撮像装置、その製造方法、およびデジタルカメラ
US20080048280A1 (en) 2004-11-16 2008-02-28 Matsushita Electric Industrial Co., Ltd. Light Receiving Device, Method for Fabricating Same, and Camera
JP2009021415A (ja) 2007-07-12 2009-01-29 Panasonic Corp 固体撮像装置およびその製造方法
JP2009260445A (ja) 2008-04-11 2009-11-05 Sharp Corp 固体撮像素子およびその製造方法、電子情報機器
US20140252521A1 (en) 2013-03-11 2014-09-11 Taiwan Semiconductor Manufacturing Company, Ltd. Image Sensor with Improved Dark Current Performance
JP2015230896A (ja) 2014-06-03 2015-12-21 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
JP2016052041A (ja) 2014-09-01 2016-04-11 ソニー株式会社 固体撮像素子及びその信号処理方法、並びに電子機器
JP2016219468A (ja) 2015-05-14 2016-12-22 キヤノン株式会社 固体撮像装置及びその製造方法

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US20200172443A1 (en) 2020-06-04
US11332409B2 (en) 2022-05-17
JP2020086408A (ja) 2020-06-04

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