JP7296381B2 - 金属酸窒化物膜の作製方法 - Google Patents

金属酸窒化物膜の作製方法 Download PDF

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JP7296381B2
JP7296381B2 JP2020528536A JP2020528536A JP7296381B2 JP 7296381 B2 JP7296381 B2 JP 7296381B2 JP 2020528536 A JP2020528536 A JP 2020528536A JP 2020528536 A JP2020528536 A JP 2020528536A JP 7296381 B2 JP7296381 B2 JP 7296381B2
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metal oxynitride
oxynitride film
plane
sample
substrate
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JPWO2020008294A1 (ja
JPWO2020008294A5 (enExample
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和幸 種村
正太 三本菅
直樹 奥野
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/06—Epitaxial-layer growth by reactive sputtering
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    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0676—Oxynitrides
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
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    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02617—Deposition types
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  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Led Devices (AREA)
  • Thin Film Transistor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
JP2020528536A 2018-07-06 2019-06-24 金属酸窒化物膜の作製方法 Active JP7296381B2 (ja)

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JP2023096241A JP7531660B2 (ja) 2018-07-06 2023-06-12 金属酸窒化物膜及び表示装置
JP2024123599A JP2024163913A (ja) 2018-07-06 2024-07-30 金属酸窒化物膜

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JP2018128964 2018-07-06
JP2018128964 2018-07-06
PCT/IB2019/055287 WO2020008294A1 (ja) 2018-07-06 2019-06-24 金属酸窒化物膜の作製方法

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TW202209663A (zh) * 2020-02-14 2022-03-01 日商半導體能源研究所股份有限公司 顯示裝置以及電子裝置
WO2025079560A1 (ja) * 2023-10-11 2025-04-17 住友化学株式会社 金属窒化物、膜、積層体、素子、デバイス、膜の製造方法、磁気トンネル接合素子、及び、磁気デバイス

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JP2001044500A (ja) 1999-07-26 2001-02-16 Agency Of Ind Science & Technol Ａ面サファイア基板を用いたＺｎＯ系化合物半導体発光素子およびその製法
JP2011029238A (ja) 2009-07-21 2011-02-10 Fujifilm Corp 結晶性ホモロガス化合物層を含む積層体の製造方法及び電界効果型トランジスタ
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JP2017218675A (ja) 2016-06-03 2017-12-14 株式会社半導体エネルギー研究所 スパッタリングターゲット、酸化物半導体、酸窒化物半導体およびトランジスタ

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JP2011029238A (ja) 2009-07-21 2011-02-10 Fujifilm Corp 結晶性ホモロガス化合物層を含む積層体の製造方法及び電界効果型トランジスタ
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US11728163B2 (en) 2023-08-15
US12315717B2 (en) 2025-05-27
US20210125823A1 (en) 2021-04-29
JP2023118744A (ja) 2023-08-25
CN112335024A (zh) 2021-02-05
KR20210027448A (ko) 2021-03-10
CN119753828A (zh) 2025-04-04
JP2024163913A (ja) 2024-11-22
CN112335024B (zh) 2025-01-24
JP7531660B2 (ja) 2024-08-09
WO2020008294A1 (ja) 2020-01-09
US20230402280A1 (en) 2023-12-14

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