JP7283428B2 - 発光装置 - Google Patents

発光装置 Download PDF

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Publication number
JP7283428B2
JP7283428B2 JP2020055744A JP2020055744A JP7283428B2 JP 7283428 B2 JP7283428 B2 JP 7283428B2 JP 2020055744 A JP2020055744 A JP 2020055744A JP 2020055744 A JP2020055744 A JP 2020055744A JP 7283428 B2 JP7283428 B2 JP 7283428B2
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JP
Japan
Prior art keywords
light emitting
semiconductor layer
emitting element
film
light
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JP2020055744A
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English (en)
Japanese (ja)
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JP2021158179A (ja
JP2021158179A5 (enExample
Inventor
浩一 五所野尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
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Toyoda Gosei Co Ltd
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Filing date
Publication date
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Priority to JP2020055744A priority Critical patent/JP7283428B2/ja
Priority to US17/172,169 priority patent/US11764329B2/en
Publication of JP2021158179A publication Critical patent/JP2021158179A/ja
Publication of JP2021158179A5 publication Critical patent/JP2021158179A5/ja
Application granted granted Critical
Publication of JP7283428B2 publication Critical patent/JP7283428B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape

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  • Led Devices (AREA)
JP2020055744A 2020-03-26 2020-03-26 発光装置 Active JP7283428B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2020055744A JP7283428B2 (ja) 2020-03-26 2020-03-26 発光装置
US17/172,169 US11764329B2 (en) 2020-03-26 2021-02-10 Light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020055744A JP7283428B2 (ja) 2020-03-26 2020-03-26 発光装置

Publications (3)

Publication Number Publication Date
JP2021158179A JP2021158179A (ja) 2021-10-07
JP2021158179A5 JP2021158179A5 (enExample) 2022-06-27
JP7283428B2 true JP7283428B2 (ja) 2023-05-30

Family

ID=77856473

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020055744A Active JP7283428B2 (ja) 2020-03-26 2020-03-26 発光装置

Country Status (2)

Country Link
US (1) US11764329B2 (enExample)
JP (1) JP7283428B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7052742B2 (ja) * 2019-01-23 2022-04-12 豊田合成株式会社 発光素子
KR20220149865A (ko) * 2021-04-30 2022-11-09 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
JP7639774B2 (ja) * 2022-06-02 2025-03-05 豊田合成株式会社 発光素子および発光素子の製造方法
JP7677239B2 (ja) * 2022-06-02 2025-05-15 豊田合成株式会社 発光素子および発光素子の製造方法
JP2023178173A (ja) * 2022-06-02 2023-12-14 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法
JP7740173B2 (ja) * 2022-09-01 2025-09-17 豊田合成株式会社 Ｌｅｄディスプレイ素子およびその製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000516273A (ja) 1996-08-06 2000-12-05 ザ トラスティーズ オブ プリンストン ユニバーシティ エレクトロルミネッセンス素子用の混合蒸着膜
JP2010177460A (ja) 2009-01-29 2010-08-12 Stanley Electric Co Ltd 半導体発光素子及びその製造方法
JP2014175338A (ja) 2013-03-06 2014-09-22 Stanley Electric Co Ltd 半導体発光素子及びその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5772235A (en) * 1980-10-20 1982-05-06 Matsushita Electric Ind Co Ltd Transparent electrode and production thereof
JP3713725B2 (ja) * 1994-09-28 2005-11-09 富士ゼロックス株式会社 半導体レーザ装置、その製造方法およびその駆動方法
JPH09205250A (ja) * 1996-01-26 1997-08-05 Fuji Xerox Co Ltd 横方向電流注入型面発光半導体レーザ装置およびその製造方法
JP3719467B2 (ja) * 1997-05-16 2005-11-24 日本オプネクスト株式会社 光半導体装置
KR20080054402A (ko) 2005-09-19 2008-06-17 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 가변 컬러 발광 장치와, 그를 포함하는 조명 시스템, 조명시스템 네트워크 및 어셈블리, 및 그를 위한 제어기 및제어 방법
KR20110132160A (ko) * 2010-06-01 2011-12-07 삼성엘이디 주식회사 반도체 발광 소자 및 그 제조방법
US20130270514A1 (en) * 2012-04-16 2013-10-17 Adam William Saxler Low resistance bidirectional junctions in wide bandgap semiconductor materials
US12300770B2 (en) * 2021-03-03 2025-05-13 Toyoda Gosei Co., Ltd. Flip-chip mounted monolithic micro LED display element including a plurality of light-emitting parts arranged in a matrix

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000516273A (ja) 1996-08-06 2000-12-05 ザ トラスティーズ オブ プリンストン ユニバーシティ エレクトロルミネッセンス素子用の混合蒸着膜
JP2010177460A (ja) 2009-01-29 2010-08-12 Stanley Electric Co Ltd 半導体発光素子及びその製造方法
JP2014175338A (ja) 2013-03-06 2014-09-22 Stanley Electric Co Ltd 半導体発光素子及びその製造方法

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Publication number Publication date
JP2021158179A (ja) 2021-10-07
US11764329B2 (en) 2023-09-19
US20210305457A1 (en) 2021-09-30

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